Low temperature deposition of tin oxide films by inductively coupled plasma assisted chemical vapor deposition

Well-crystallized tin oxide films were successfully synthesized without additional heating by inductively coupled plasma assisted chemical vapor deposition (ICP-CVD). The degree of crystallization was affected by the ICP power and hydrogen flow rate. The substrate temperature was increased only up to 423-453 K by plasma heating, which suggests that the formation of the SnO₂ crystals was not caused by plasma heating, but by enhanced reactivity of precursors in high density plasma. The micro-hardness of deposited tin oxide films ranged from 5.5 to 11 GPa at different hydrogen flow rates.     

Optimized inductively coupled plasma etching for poly(methyl-methacrylate-glycidly-methacrylate) optical waveguide

Optical loss is a crucial quality for the application of polymer waveguide devices. The optimized oxygen inductively coupled plasma etching conditions, including antenna power, bias power, chamber pressure, O₂ flow rate and etching time for the fabrication of smooth vertical poly(methyl-methacrylate-glycidly-methacrylate) channel waveguide were systematically investigated. Atomic force microscopy and scanning electron microscopy were used to characterize the etch rate, surface roughness and vertical profiles. The increment of etch rate with the antenna power, bias power and O₂ flow rate was observed. Bias power and chamber pressure were found to be the main factor affecting the interface roughness. The vertical profiles were proved to be closely related to antenna power, bias power and O₂ flow rate. Surface roughness increment was observed when the etching time increased.     

Etch characteristics of FePt magnetic thin films using inductively coupled plasma reactive ion etching

Etch characteristics of L10 FePt thin films masked with TiN films were investigated using an inductively coupled plasma (ICP) reactive ion etching in a CH₃OH/Ar plasma. As the CH₃OH gas was added to Ar, the etch rates of FePt thin films and TiN hard mask gradually decreased, and the etch profile of FePt films improved with high degree of anisotropy. With increasing ICP rf power and dc-bias voltage to substrate and decreasing gas pressure, the etch rate increased and the etch profile becomes vertical without any redepositions or etch residues. Based on the etch characteristics and surface analysis of the films by X-ray photoelectron spectroscopy, it can be concluded that the etch mechanism of FePt thin films in a CH₃OH/Ar gas does not follow the reactive ion etch mechanism but the chemically assisted sputter etching mechanism, due to the chemical reaction of FePt film with CH₃OH gas.     

The dry etching property of TiO2 thin films using metal-insulator-metal capacitor in inductively coupled plasma system

In this work, we investigated the etching characteristics of TiO₂ thin films and the selectivity of TiO₂ to SiO₂ in a BCl₃/Ar inductively coupled plasma (ICP) system. The maximum etch rate of 84.68 nm/min was obtained for TiO₂ thin films at a gas mixture ratio of BCl₃/Ar (25:75%). In addition, etch rates were measured as a function of etching parameters, such as the RF power, DC-bias voltage and process pressure. Using the X-ray photoelectron spectroscopy analysis the accumulation of chemical reaction on the etched surface was investigated. Based on these data, the ion-assisted physical sputtering was proposed as the main etch mechanism for the BCl₃-containing plasmas.     

Synthesis of nitrogen-rich carbon nitride thin films via magnetic field-assisted inductively coupled plasma sputtering

Carbon nitride (CN_x) thin films were synthesized by magnetic field-assisted inductively coupled plasma (ICP) sputtering. The electron density, electron temperature and optical emission intensity of the plasma state were significantly changed by varying the external magnetic field applied. The CN_x thin film with the highest nitrogen content (N/C=1.16) was obtained when the electron density was at its highest and the electron temperature at its lowest. Additionally, the optical emission from atomic nitrogen was the strongest under the same condition.     

Dry etching of TaN thin film using CH4/Ar inductively coupled plasma

In this research, we investigated the TaN etch rate and selectivity with under layer (HfO₂) and mask material (SiO₂) in inductively coupled CH₄/Ar plasma. As the CH₄ content increased from 0% to 80% in CH₄/Ar plasma, the TaN etch rate was increased from 11.9 to 22.8 nm/min. From optical emission spectroscopy (OES), the intensities for CH [431 nm] and H [434 nm] were increased with the increasing CH₄ content from 0% to 100% in CH₄/Ar plasma. The results of x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) showed no accumulation of etch by-products from the etched surface of TaN thin film. As a result of OES, AES and XPS analysis, we observed the etch by-products from the surfaces, such as Ta-N-CH and N-CH bonds. Based on the experimental results, the TaN etch was dominated by the chemical etching with the assistance of Ar sputtering in reactive ion etching mechanism.     

感应耦合等离子刻蚀InP工艺

采用Cl2/CH4/N2感应耦合等离子体对InP进行了刻蚀.系统地讨论了RF功率、ICP功率、反应腔压力、气体流量等工艺参数对InP材料端面刻蚀的影响.通过优化工艺参数,获得了光滑垂直的InP刻蚀端面,刻蚀速率达到841 nm/min,与SiO2的选择比达到15:1.     

Effects of growth variables on the properties of single crystalline ZnO thin film grown by inductively coupled plasma metal organic chemical vapor deposition

Single crystalline undoped and Ga-doped n-type zinc oxide (ZnO) films were grown on sapphire (Al₂O₃) substrates by inductively coupled plasma (ICP) metal organic chemical vapor deposition. Effects of growth variables on the structural, optical, and electrical properties of ZnO films have been studied in detail. Single crystal films with flat and smooth surfaces were reproducibly obtained, with application of sample bias and O₂ ICP. The best film properties were obtained at the growth condition of 650 °C, 400 W ICP power, − 94 V bias voltage, O/Zn (VI/II) ratio of 75. Single crystalline Ga doped n-ZnO films were also obtained, with free carrier concentration of about 1.5 × 10¹⁹/cm³ at 1 at.% Ga concentration.     

Time evolution of electronegativity in a pulsed inductively coupled oxygen plasma

The electronegativity in a continuous wave (CW) and pulsed mode plasmas was calculated using the measured results of both the single Langmuir probe and the retarding field analyzer. For the pulsed mode measurement, both of the measurements were performed in a time-resolved method using a boxcar sampling technique. For the conversion of the retarding field analyzer measurement results into absolute positive ion densities, argon plasma was used as a reference. The pulsed oxygen plasma was generated using the inductively coupled antenna and modulated at a repetition rate of 5 kHz and the duty ratio of 50%. The gas pressure was changed from 5 to 30 mTorr. The time evolution of the electronegativity shows that there is a pressure regime where the electron attachment reaction during the RF on-time is very active, indicating that the negative ion density reaches its maximum value during the RF on-time. Compared to the CW oxygen plasma, the electronegativity of the pulsed oxygen plasma varies within a wider range of values.     

A study on the etch characteristics of HfAlO3 dielectric thin film in Cl2/Ar gas chemistry using inductively coupled plasma system

Thin films of HfAlO₃, a high-k material, were etched using inductively-coupled plasma. The dry etching mechanism of the HfAlO₃ thin film was studied by varying the Cl₂/Ar gas mixing ratio, RF power, direct current bias voltage, and process pressure. The maximum etch rate of the HfAlO₃ thin film was 16.9 nm/min at a C1₂/(C1₂ + Ar) ratio of 80%. Our results showed that the highest etch rate of the HfAlO₃ thin films was achieved by reactive ion etching using Cl radicals, due to the high volatility of the metal-chlorides. Consequently, the increased chemical effect caused an increase in the etch rate of the HfAlO₃ thin film. Surface analysis by x-ray photoelectron spectroscopy showed evidence that Hf, Al and O reacted with Cl and formed nonvolatile metal-oxide compounds and volatile metal-chlorides. This effect may be related to the concurrence of chemical and physical pathways in the ion-assisted chemical reaction.     

Dry etching characteristics of HfAlO3 thin films in BCl3/Ar plasma using inductively coupled plasma system

In this study, we monitored the HfAlO₃ etch rate and selectivity to SiO₂ as a function of the etch parameters (gas mixing ratio, RF power, DC-bias voltage, and process pressure). A maximum etch rate of 52.6 nm/min was achieved in the 30% BCl₃/(BCl₃ + Ar) plasma. The etch selectivity of HfAlO₃ to SiO₂ reached 1.4. As the RF power and the DC-bias voltage increased, the etch rate of the HfAlO₃ thin film increased. As the process pressure decreased, the etch rate of the HfAlO₃ thin films increased. The chemical state of the etched surfaces was investigated by X-ray Photoelectron Spectroscopy (XPS). According to the results, the etching of HfAlO₃ thin films follows the ion-assisted chemical etching mechanism.     

Inductively coupled plasma reactive ion etching of titanium thin films using a Cl2/Ar gas

Inductively coupled plasma reactive ion etching of titanium thin films patterned with a photoresist using Cl₂/Ar gas was examined. The etch rates of the titanium thin films increased with increasing the Cl₂ concentration but the etch profiles varied. In addition, the effects of the coil rf power, dc-bias voltage and gas pressure on the etch rate and etch profile were investigated. The etch rate increased with increasing coil rf power, dc-bias voltage and gas pressure. The degree of anisotropy in the etched titanium films improved with increasing coil rf power and dc-bias voltage and decreasing gas pressure. X-ray photoelectron spectroscopy revealed the formation of titanium compounds during etching, indicating that Ti films etching proceeds by a reactive ion etching mechanism.     

Etch characteristics of IrMn thin films using an inductively coupled plasma of CH3OH/Ar

An inductively coupled plasma reactive ion etching of IrMn magnetic thin films patterned with Ti hard mask was studied in a CH₃OH/Ar gas mix. As the CH₃OH concentration increased, the etch rates of IrMn thin films and Ti hard mask decreased, while the etch profiles improved with high degree of anisotropy. The effects of coil rf power, dc-bias voltage to substrate and gas pressure on the etch characteristics were investigated. The etch rate increased and the etch profile improved with increasing coil rf power, dc-bias voltage and decreasing gas pressure. X-ray photoelectron spectroscopy revealed that the chemical reaction between IrMn films and CH₃OH gas occurred, leading to the clean and good etch profile with high degree of anisotropy of 90°.     

The structure and optical properties of silicon nanowires prepared by inductively coupled plasma chemical vapor deposition

Silicon nanowires were prepared by vapor-liquid-solid (VLS) mechanism at a growth temperature as low as 380 °C in an inductively coupled plasma chemical vapor deposition system. The nanowires consist of crystalline core surrounded by a thick amorphous silicon shell. An increase in plasma power produces dense and long nanowires with thick amorphous shell, accompanied with a thick uncatalyzed amorphous silicon film on the silicon substrate. Small catalyst nanoparticles are easier activated by plasma to grow the dense and thin nanowires in comparison with the large-size nanoparticles. Moreover, an enhanced optical absorption is achieved due to the strong light trapping and anti-reflection effects in the thin and tapered silicon nanowires with high density.     

Surface treatments of indium tin oxide films by using high density plasma

We investigated the effects of various surface treatments on the work function and chemical composition of an indium tin oxide (ITO) surface. Ultraviolet photoelectron spectroscopy (UPS) was used to measure the work function of ITO. X-ray photoelectron spectroscopy (XPS) was used to study the electron structures of ITO surface. We performed surface treatments on ITO using O₂ plasma and HCl solution. Our UPS/XPS analysis indicates increases in the work functions by O₂ plasma treatments. It is known that the Fermi energy level is controlled by the donor concentration, and thus the Fermi energy level is shifted toward the valence band minimum.     

The effect of the H2 flow rate on the structure and optical properties of TiO2 films deposited by inductively coupled plasma assisted chemical vapor deposition

The optical and photocatalytic properties of TiO₂ are closely related to crystalline structures, such as rutile and anatase. In this paper, TiO₂ films were produced by inductively coupled plasma (ICP) assisted chemical vapor deposition (CVD) without extra heating of the substrate, and the effect of H₂ addition on the structure and optical properties of the films was investigated. After increasing the partial pressure of H₂, the structure of the TiO₂ films changed from anatase to rutile, which usually appears at high temperatures (> 600 °C). The light transmittance decreased with increasing the H₂ flow rate due to the increased surface roughness. The photocatalytic activity of the anatase TiO₂ film was better than that of the rutile TiO₂ film.     

Preparation and dielectric properties of polycrystalline films with dense nano-structured BaTiO3 by chemical vapor deposition using inductively coupled plasma

To clarify the dielectric properties of BaTiO₃ with nanometer size region, it is necessary to fabricate the dense structure composed of BaTiO₃ nanoparticles. In the present study, BaTiO₃ nanoparticles were directly deposited on Pt/Al₂O₃/SiO₂/Si substrate by introducing Ba(DPM)₂ and Ti(OiPr)₄ into an inductively coupled plasma (ICP). The optimal condition for preparing dense structure of BaTiO₃ nanoparticles was investigated by changing the substrate temperature. Single phase BaTiO₃ of perovskite structure was obtained at the substrate temperatures between 773 and 1173 K. The dense structure of BaTiO₃ nanoparticles with particle sizes of about 30 nm was successfully obtained at the substrate temperature of 773 K. At the substrate temperature>873 K, the deposited nanoparticles sintered to be the columnar structure. The ε_r and tan δ of the BaTiO₃ nanoparticles were estimated to be 285 and 6.6%, respectively (1 kHz and 100 mV). The phase of the BaTiO₃ nanoparticles were found to be paraelectric by the measurement of C-V curves. The breakdown field of the dense structure of BaTiO₃ nanoparticles was estimated to be 649 kV/cm according to I-V curves. These features are favorable for applying the structure to the dielectric layer of multilayer capacitors.     

Structure and mechanical properties of Mo-N/Cu films produced by inductively coupled plasma reactive sputtering

Mo-N/Cu films were deposited on silicon and steel substrates by inductively coupled plasma sputtering using Mo-Cu alloy targets having different Cu concentrations. The structure and mechanical properties of the Mo-N/Cu films were investigated. The (200)-oriented γ-Mo₂N-Cu films were obtained at a nitrogen flow rate higher than 1.5 sccm, whereas metallic films were deposited at a nitrogen flow rate lower than 1 sccm. Cu contents in the films increased from 3 at.% to 8 at.% with corresponding increase in Cu concentrations in the target from 5 at.% to 20 at.%. Hardness of the films varied between 19 and 35 GPa as the Cu concentration and nitrogen flow rate were changed. HRTEM and XPS analyses showed that Mo-N/Cu films consisted of γ-Mo₂N grains lower than 10 nm in size and a copper amorphous phase. The minimum value of coefficient of friction (CoF) of the films was 0.17 when the film tested by alumina ball.     

Evolution of etch profile in etching of CoFeB thin films using high density plasma reactive ion etching

Inductively coupled plasma reactive ion etching of CoFeB magnetic thin films patterned with Ti hard mask was studied in a CH₃OH/Ar gas mix. As the CH₃OH concentration increased, the etch rates of CoFeB thin films and Ti hard mask decreased but the etch profiles improved with high degree of anisotropy. The effects of coil rf power, dc-bias voltage and gas pressure on the etch characteristics were investigated. The etch rate increased with increasing coil rf power, dc-bias voltage and decreasing gas pressure. The degree of anisotropy in the etch profile of CoFeB films improved with increasing coil rf power and dc-bias voltage. X-ray photoelectron spectroscopy revealed that the chemical compounds containing Co and Fe components were formed during the etching. However, it was expected that the formation of these compounds could not increase the etch rates of the films due to low volatile compounds despite the improvement in etch profile.     

Dry etching of TaN thin film using CH4/Ar inductively coupled plasma

In this research, we investigated the TaN etch rate and selectivity with under layer (HfO₂) and mask material (SiO₂) in inductively coupled CH₄/Ar plasma. As the CH₄ content increased from 0% to 80% in CH₄/Ar plasma, the TaN etch rate was increased from 11.9 to 22.8 nm/min. From optical emission spectroscopy (OES), the intensities for CH [431 nm] and H [434 nm] were increased with the increasing CH₄ content from 0% to 100% in CH₄/Ar plasma. The results of x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) showed no accumulation of etch by-products from the etched surface of TaN thin film. As a result of OES, AES and XPS analysis, we observed the etch by-products from the surfaces, such as Ta–N–CH and N–CH bonds. Based on the experimental results, the TaN etch was dominated by the chemical etching with the assistance of Ar sputtering in reactive ion etching mechanism.