a-SiOx:H/a-SiOy:H多层薄膜微结构的退火行为

采用PECVD技术在P型硅衬底上制备了a-SiOx:H/a-SiOy:H多层薄膜,利用AES和TEM技术研究了这种薄膜微结构的退火行为.结果表明:a-SiOx:H/a-SiOy:H多层薄膜经退火处理形成nc-Si/SiO2多层量子点复合膜,膜层具有清晰完整的结构界面.纳米硅嵌埋颗粒呈多晶结构,颗粒大小随退火温度升高而增大.在一定的实验条件下,样品在650℃下退火可形成尺寸大小合适的纳米硅颗粒.初步分析了这种多层复合膜形成的机理.     

C2H2／H2／SiH4等离子体聚合及其沉积物的结构与性能的研究

利用Ｃ２Ｈ２／Ｈ２／ＳｉＨ４混合单体等离子体聚合沉积在ＨＤＰＥ板表面制备薄膜，发现薄膜与ＨＤＰＥ粘接良好，Ｈ２使薄膜与基体附着性能提高但其沉积速率下降，而引入ＳｉＨ４则使薄膜的耐磨性能有较大的提高。ＩＲ和ＸＰＳ光谱表明：薄膜中含有较多的－ＯＨ，Ｏ－Ｃ，Ｃ－Ｓｉ和Ｓｉ－Ｏ基团，随着ＳｉＨ４／Ｈ２的增加薄膜中的Ｃ／Ｓｉ比可达１．２２２，说明产物的结构介于无机材料和有机物之间。     

Si／Ag／Si和Si／Au／Si薄膜分形晶化的TEM和EDS研究

本文利用透射电镜（ＴＥＭ）和Ｘ射线能谱（ＥＤＳ）对ａ－Ｓｉ：Ｈ／Ａｇ／ａ－Ｓｉ：Ｈ和ａ－Ｓｉ：Ｈ／Ａｕ／ａ－Ｓｉ：Ｈ薄膜的分形晶化行为进行了研究。结果表明薄膜的分形晶化强烈依赖于退火条件，分形的形成可用随机逐次触发形核和生长（ＲＳＮＧ）来加以解释。尽管膜内存在明显的互扩散，Ｓｉ分形区厚度与均匀基体区厚度相近。但在ａ－Ｓｉ：Ｈ／Ａｇ／ａ：Ｓｉ：Ｈ膜中存在部分较大的Ａｇ晶粒凸出膜面。     

氩离子轰击对射频溅射法制备的a—SiC：H膜退火形成6H—SiC的影响

本对射频溅射法沉积的ａ－ＳｉＣ：Ｈ膜热退火形成６Ｈ－ＳｉＣ相进行了研究。我们采用红外透射谱、喇曼背散射谱和Ｘ光衍射谱来研究退火形成６Ｈ－ＳｉＣ的过程。在较高的射频功率下沉积的ａ－ＳｉＣ：Ｈ膜经８００℃６０分钟等时退火后转变为６Ｈ－ＳｉＣ相，该温度低于在低功率下制备的ａ－ＳｉＣ：Ｈ形成６Ｈ－ＳｉＣ（１０００℃）。高功率可导致６Ｈ－ＳｉＣ形成温度的降低与膜中硅及石墨团簇的消失，同时高能量的氩离子轰击     

a-SiO_x∶H/a-SiO_y∶H多层薄膜微结构的退火行为

采用 PECVD技术在 P型硅衬底上制备了 a- Si Ox∶ H/a- Si Oy∶ H多层薄膜 ,利用 AES和 TEM技术研究了这种薄膜微结构的退火行为 .结果表明 :a- Si Ox∶ H/a- Si Oy∶ H多层薄膜经退火处理形成 nc- Si/Si O2 多层量子点复合膜 ,膜层具有清晰完整的结构界面 .纳米硅嵌埋颗粒呈多晶结构 ,颗粒大小随退火温度升高而增大 .在一定的实验条件下 ,样品在 650℃下退火可形成尺寸大小合适的纳米硅颗粒 .初步分析了这种多层复合膜形成的机理     

淀积条件对a-SiNx:H薄膜中含氢基团的影响

利用红外光谱研究了等离子体化学气相沉积（ＰＥＣＶＤ）方法淀积的ａ－ＳiＮｘ：Ｈ薄膜。分析了气体流量比（Ｒ）、衬底温度（Ｔｓ）以及射频功率（Ｐ(ｒｆ)）的变化对ａ－ＳｉＮｘ：Ｈ薄膜中ＳｉＨ、ＮＨ和ＮＨ２基团的吸收峰强度的影响,同时研究了退火条件对ａ－ＳｉＮｘ：Ｈ薄膜中含氢基团的影响。     

自对准外延CoSi_2源漏接触CMOS器件技术

ＣＯ／Ｔｉ／Ｓｉ或ＴｉＮ／Ｃｏ／Ｔｉ／Ｓｉ多层薄膜结构通过多步退火技术在Ｓｉ单晶衬底上外延生长ＣｏＳｉ２薄膜，ＡＥＳ、ＲＢＳ测试显示ＣｏＳｉ２薄膜具有良好均匀性和单晶性．这种硅化物新技术已用于ＣＭＯＳ器件工艺．采用等离子体增强化学汽相淀积（ＰＥＣＶＤ）技术淀积氮氧化硅薄膜，并用反应离子刻蚀（ＲＩＥ）技术形成多晶硅栅边墙．固相外延ＣｏＳｉ２薄膜技术和边墙工艺相结合，经过选择腐蚀，可以分别在源漏区和栅区形成单晶ＣｏＳｉ２和多晶ＣｏＳｉ２薄膜，构成新型自对准硅化物（ＳＡＬＩＣＩＤＥ）器件结构．在Ｎ阱ＣＭＯＳ工艺     

掺铒a-Si:H,O薄膜1.54μm光致发光和微结构

采用等离子化学气相淀积方法,改变ＳｉＨ４和Ｈ２Ｏ的流量比制备含有不同氧浓度的ａ－Ｓｉ：Ｈ,薄膜,用离子注入方法掺入铒,经３００－９３５℃快速热退火,在波长１．５４μｍ处观察到很强的室温光致发光。氧的加入可以大大提高铒离子的发光强度,并且发光强度随氧含量的变化有一个类似于高斯曲线的分布关系,不是单调地随氧含量的增加而增强,研究了掺铒ａ－Ｓｉ：Ｈ,Ｏ薄膜和微结构,讨论了发光强度与薄膜微结构的关系。     

氩离子轰击对射频溅射法制备的a-SiC∶H膜退火形成6H-SiC的影响

本文对射频溅射法淀积的ａ－ＳｉＣ∶Ｈ膜热退火形成６Ｈ－ＳｉＣ相进行了研究．我们采用红外透射谱、喇曼背散射谱和Ｘ光衍射谱来研究退火形成６Ｈ－ＳｉＣ的过程．在较高的射频功率下淀积的ａ－ＳｉＣ∶Ｈ膜经８００℃６０分钟等时退火后转变为６Ｈ－ＳｉＣ相，该温度低于在低功率下制备的ａ－ＳｉＣ∶Ｈ形成６Ｈ－ＳｉＣ的温度（１０００℃）．高功率可导致６Ｈ－ＳｉＣ形成温度的降低与膜中硅及石墨团簇的消失，同时高能量的氩离子轰击可使膜中氢含量减少及各组分均相．通过改变射频功率，本文研究了氩离子轰击对ａ－ＳｉＣ∶Ｈ膜及形成６Ｈ－Ｓｉ     

a—Si：H TFT有源矩阵制造技术的研究

对ａ：Ｓｉ：Ｈ ＴＦＴ有源矩阵的一些关键制造工艺进行研究。研究了Ｔａ２Ｏ５／ａ－ＳｉＮｘ双绝缘层的制备技术，提出了一种新的双有源层结构ａ－Ｓｉ：Ｈ ＴＦＴ来降低背光源对器件特性的影响，研制的ａ－Ｓｉ：Ｈ ＴＦＴ有源矩阵实现了彩色视频信号的动态显示。     

准周期a-Si:H/a-SiN_x:H超晶格

本文首次报道成功地实现了非晶态半导体准周期(无平移对称性)超晶格结构.利用辉光放电汽相淀积技术,由两种超薄的a-Si:H层和a-SiN_x:H层按Fibonacci序列程序淀积而构成一维准周期超晶格.其中两种一维周期格子的调制波长比为黄金分割τ=(1+5~(1/2))/2.剖面电子显微像和相应的电子衍射花样揭示出这类新型非晶态半导体超晶格的奇异性质.简单的理论计算给予实验衍射图像以明确的物理解释.     

等离子刻蚀a-Si:H/a-C:H超晶格

本文介绍了 C_yF_(14)+ O_2等离子刻蚀 a=Si:H/a-C:H 超晶格的工艺原理及方法,简便可行.     

a-Si:H,a-SiC:H和a-SiN:H合金系统中g值的理论计算(英文)

The g-values of the ESR signals caused by dangling bonds in a-Si:H, a-SiC:H and a-SiN:H alloy systems have been calculated for a cluster by using the CNDO method, and compared with the observed g-values. The detailed formula for the calculation of g-values was derived from the formula of A.J.Stone. It is found that the g-values for dangling bonds on Si atoms are affected by the surrounding C or N atoms in a-SiC:H or a-SiN: H alloy systems and the calculated results are in good accordance with the observed ones. Some usefull discussions have also been made.     

Influence of absorber doping in a-SiC：H/a-Si：H/a-SiGe：H solar cells

This work deals with the design evaluation and influence of absorber doping for a-Si:H/a-SiC:H/a-SiGe:H based thin-film solar cells using a two-dimensional computer aided design (TCAD) tool. Various physical parameters of the layered structure, such as doping and thickness of the absorber layer, have been studied. For reliable device simulation with realistic predictability, the device performance is evaluated by implementing necessary models (e.g., surface recombinations, thermionic field emission tunneling model for carrier transport at the heterojunction, Schokley-Read Hall recombination model, Auger recombination model, bandgap narrowing effects, doping and temperature dependent mobility model and using Fermi-Dirac statistics). A single absorber with a graded design gives an efficiency of 10.1% for 800 nm thick multiband absorption. Similarly, a tandem design shows an efficiency of 10.4% with a total absorber of thickness of 800 nm at a bandgap of 1.75 eV and 1.0 eV for the top a-Si and bottom a-SiGe component cells. A moderate n-doping in the absorber helps to improve the efficiency while p doping in the absorber degrades efficiency due to a decrease in the V_OC (and fill factor) of the device.     

a-Si:H/a-SiN_x:H多层膜界面的研究

<正> 尽管过去几年对非晶半导体多层膜及其界面对多层膜传输性能影响的研究甚多,然而对于界面缺陷态的特性及其密度了解甚少。不同的测量方法得到的a-Si:H/a-SiNx:H界面缺陷态密度可从1010变到1012cm-2。这一实验结果反映了每一测试方法仅能探测某些能级的缺陷,在某些情况下可能是不同类的缺陷。非晶硅系材料都包含有氢。已发现,在多层膜的沉积过程中,由于组成多层膜的子层间应力释放的需要以及两子层材料的氢扩散系数不同而     

掺硼a-SiC:H/a-Si:H异质结的硼扩散(英文)

The diffusion of impurities in a p-i-n solar cell is one of causes for the degradation of energy conversion efficiency. However, few reports on the study of the illumination dependence of the boron diffusion in B-doped a-SiC:H/a-Si:H heterojunction have been seen so far. In this work, the B depth profiles in B-doped a-SiC:H/a-Si:H hetero junctions after illumination and annealing have been measured by nuclear reaction analysis; from the change of B profiles, we estimate the diffusion coefficient of B in a-Si:H.Diffusion of electrically activated B atoms is investigated and a simple discussion for the results obtained is presented as well.     

准周期a-Si:H/a-SiN_x:H超晶格研究中的新结果(英文)

We are the first to report the realization of quasiperiodic amorphous semiconductor superlattices composed of alternating layers of a-Si:H and a-SiNx:H to form a Fibonacci sequence in which the ratio of incommensurate periods is equal to the golden mean T=(1+5~(1/2))/2. In the present work new results of low-angle X-ray diffraction pattern with Lf = τLa + Lb= 148A are well consistent with a numerical calculation using formula Km,n = 2τLf-1 (mτ +n), which further demonstrate the peculiarities of quasiperiodicity. From electrical measurements done along the film plane, the feature of temperature dependence of σd suggests that there are two transport pathes at different temperature region. We tentatively explain this phenomenon in terms of the different space charge density and mobility edge in two distinct building blocks A and B of quasiperiodic a-Si:H/a-SiNx:H super-lattices.     

在a-Si:H/a-SiN_x:H超晶格中导电机制的研究(英文)

We have studied the conduction mechanism of a series of a-Si:H/a-SiNx:H multi-layers samples which have an identical sublayer thickness and periodic numbers, except the ratio of N/Si in a-SiNx:H sublayers. It is shown that the temperature characteristic of conductivity of these samples has a kink point in the range of 120-140℃. The kink temperature and the acttivation energy of conductivity are related to the N/Si ratio in the a-SiNx:H sublayers. We recognized preliminarily that the mechanism above and below the kink temperature could be the bulk or the interfacial conduction in a-Si:H well layers.     

a-Si:H和a-SiN:H薄膜的质子核磁共振研究

<正> 由辉光放电分解硅烷淀积的氢化非晶态薄膜中都包含相当数量的氢,含氢量的多少直接对薄膜的结构、性质及稳定性有很大的影响。利用核磁共振(1H NMR)可以给出有关氢的局部环境和分布的信息。它与通常所用的红外、ESR、核共振等方法所获得的信息是不同的,因此1H NMR在材料结构分析方面是有其特色的。