PdSi focal-plane array detectors for short-wave infrared Raman spectroscopy of biological tissue: a feasibility study

We have used a PdSi focal-plane array detector to measure short-wave infrared Raman spectra of pure compounds and human tissue. Raman bands of the pure compounds are clearly visible in the spectra, and a calcification feature at 960 cm(-1) is readily identifiable in the spectra of diseased human aorta. The performance characteristics of our detection device were good; dark noise contributed approximately 60 (electrons/s)/pixel, and the read noise was ~50 rms electrons/pixel. The primary noise in the spectra was due to fixed-pattern noise, which is the variation in measured signal across a detector when it is uniformly illuminated.     

Color centers and charge state recharge in γ-irradiated Yb:YAP

Gamma-ray irradiation induced color centers and charge state recharge of impurity and doped ion in 10 at.% Yb:YAP have been studied. The change in the additional absorption (AA) spectra is mainly related to the charge exchange of the impurity Fe²⁺, Fe³⁺ and Yb³⁺ ions. Two impurity color center bands at 255 and 313 nm were attributed to Fe³⁺ and Fe²⁺ ions, respectively. The broad AA band centered at 385 nm may be associated with the cation vacancies and F-type center. The transition Yb³⁺ → Yb²⁺ takes place in the process of γ-irradiation. Oxygen annealing and γ-ray irradiation lead to an opposite effect on the absorption properties of the Yb:YAP crystal. In the air annealing process, the transition Fe²⁺ → Fe³⁺ and Yb²⁺ → Yb³⁺ take place and the color centers responsible for the 385 nm band was destroyed.     

Ion-pumping mechanism in a pulsed Penning source: application to the production of multiply charged ions

The neutral atom density of a low-duty pulsed Penning ionized-gauge ion source (PIGIS) is sharply pulsed, according to the pulsed ion current into the cathode, which should act as a periodic ion pump in the plasma column of PIGIS. A high yield of multiply charged ions (Ar⁸⁺, 250–300 eμA; Ar⁷⁺, 1000 eμA) can thus be obtained under a reasonably low gas pressure during a short time (of the order of millisecond), which is sufficiently long for injection (160 μs) into the heavy-ion medical synchrotron (HIMAC) at NIRS.     

Improved temperature stability of Mo/Si multilayers by carbide based diffusion barriers through implantation of low energy CHx ions

To improve the thermal stability of Mo/Si multilayers, a novel method to form carbide based diffusion barriers, produced by the implantation of Si with CH_x⁺ ions, has been developed. The multilayers were grown by e-beam evaporation, while CH_x⁺ ions were implanted at the Mo/Si interfaces, using a Kaufman ion source with a Ne / CH₄ gas mixture. Energies were varied from 300 to 1000 eV. The growth as well as the implantation procedure were monitored by in situ X-ray reflectometry. Auger Electron Spectroscopy was used to characterize the surface composition before and after CH_x⁺ ion implantation. The shift of the Si LVV Auger peak revealed the formation of SiC. Ex situ X-ray reflectometry showed a thermal stability of both the reflectivity and the multilayer period up to 430 K.     

X-ray imaging with “edge-on” microchannel plate detector: first experimental results

A novel scanning slit X-ray imaging system based on an “edge-on” microchannel plate detector was developed and tested. Images were acquired at 50 kV(p) X-ray tube voltage with a limiting spatial resolution of 7 lp/mm. The pixel noise was measured to be 0.3 count/pixel/s for a 50×70 μm² pixel size. This photon counting detector can be considered to be virtually noise free.     

Optimum thickness of carbon stripper foils in tandem accelerator in view of transmission and lifetime

Optimum thickness of charge stripper foils installed at the terminal of a tandem accelerator has been investigated from the view of (1) charge stripping effect, (2) transmission of ions through accelerator, (3) lifetime of foils for the irradiation of ions. For this purpose, measurements have been done for (a) transmission of H, Li, O, Br and Au ions, passing through 12 UD Pelletron tandem accelerator for carbon stripper foils of 1.8–19.5 μg/cm² thickness, at terminal voltages of 5 and 10 MV, and (b) lifetime of 2–15 μg/cm² thick Tanashi foils developed by Sugai by irradiating Au ions at the terminal voltage of 10 MV. The results obtained are as follows: (a) From the view of above items (1) and (2), the optimum thickness of foils is 10 μg/cm² for ions of Z=1, several μg/cm² for Z=8, and less than a few μg/cm² for heavier ions. (b) From the view of item (3), the lifetime of Tanashi foils by means of new arc-discharge method is demonstrated to be much longer than that of commercial foils for foils thicker than about 5 μg/cm² thick. This superiority rapidly decreases with decreasing foil thickness, and at around 2 μg/cm², the lifetime of Tanashi foils is at the most 2.4 times longer than that of commercial foils.     

Balancing interpixel cross talk and detector noise to optimize areal density in holographic storage systems

We investigate the effects of interpixel cross talk and detector noise on the areal storage density of holographic data storage. A numerical simulation is used to obtain the bit-error rate (BER) as a function of hologram aperture, pixel fill factors, and additive Gaussian intensity noise. We consider the effect of interpixel cross talk at an output pixel from all possible configurations of its 12 closest-neighbor pixels. Experimental verification of this simulation procedure is shown for several fill-factor combinations. The simulation results show that areal density is maximized when the aperture coincides with the zero order of the spatial light modulator (SLM) (Nyquist sampling condition) and the CCD fill factor is large. Additional numerical analysis including finite SLM contrast and fixed-pattern noise show that, if the fixed-pattern noise reaches 6% of the mean signal level, the SLM contrast has to be larger than 6:1 to maintain high areal density. We also investigate the improvement of areal density when error-prone pixel combinations are forbidden by using coding schemes. A trade-off between an increase in areal density and the redundancy of a coding scheme that avoids isolated-on pixels occurs at a code rate of approximately 83%.     

Optimal design of CMOS pseudoactive pixel sensor (PAPS) structure for low-dark-current and large-array-size imager applications

In this paper, a pixel structure called the optimal pseudoactive pixel sensor (OPAPS) is proposed and analyzed for the applications of CMOS imagers. The shared zero-biased-buffer in the pixel is used to suppress both dark current of photodiode and leakage current of pixel switches by keeping both biases of photodiode and parasitic pn junctions in the pixel bus at zero voltage or near zero voltage. The factor of photocurrent-to-dark-current ratio per pixel area (PDRPA) is defined to characterize the performance of the OPAPS structure. It is found that a zero-biased-buffer shared by four pixels can achieve the highest PDRPA. In addition, the column sampling circuits and output correlated double sampling circuits are also used to suppress fixed-pattern noise, clock feedthrough noise, and channel charge injection. An experimental chip of the proposed OPAPS CMOS imager with the format of 352/spl times/288 (CIF) has been designed and fabricated by using 0.25-/spl mu/m single-poly-five-level-metal (1P5M) N-well CMOS process. In the fabricated CMOS imager, one shared zero-biased-buffer is used for four pixels where the PDRPA is equal to 47.29 /spl mu/m/sup -2/. The fabricated OPAPS CMOS imager has a pixel size of 8.2/spl times/.2 /spl mu/m, fill factor of 42%, and chip size of 3630/spl times/3390 /spl mu/m. Moreover, the measured maximum frame rate is 30 frames/s and the dark current is 82 pA/cm/sup 2/. Additionally, the measured optical dynamic range is 65 dB. It is found that the proposed OPAPS structure has lower dark current and higher optical dynamic range as compared with the active pixel sensor (APS) and the conventional passive pixel sensor (PPS). Thus, the proposed OPAPS structure has high potential for the applications of high-quality and large-array-size CMOS imagers.     

Molecular dynamics simulations of oxygen ion diffusion and superionic conduction in ytterbia-stabilized zirconia

Superionic conduction of oxygen ions in 10 mol% ytterbia-stabilized zirconia (YbSZ) at different temperatures is studied employing molecular dynamics simulations. Eventhough discrete hopping of one or two oxygen ions starts at about 675 K, onset of superionic conduction occurs at about 1200 K when almost all the oxygen ions participate in the hopping process. The activation energy for oxygen ion diffusion is found to be 53.25 kJ mol⁻¹. At this temperature and above, oxygen ionic conductivity exceeds 0.1 Ω⁻¹ cm⁻¹ thereby confirming superionic conduction in the YbSZ material. For 675 K < T < 1200 K, the material acts as a normal ionic conductor. The ionic conductivity values, obtained through our simulation compare well with experimental results. But activation energy for oxygen ion conduction, found from the Arrhenius plot of our simulation is 52.71 kJ mol⁻¹ which is 35% less than experimental value. Radial distribution functions, g(r) show that there is no sharp structural phase transition and no oxygen ion sub-lattice melting in YbSZ material at superionic transition. However, the reduction in, broadening and shifting of the peaks in g(r) for all ionic pairs, at higher temperatures, indicate a volume expansion of the crystal.     

Improved optical photoluminescence by charge compensation in the phosphor system CaMoO4:Eu

It has been found that charge compensated CaMoO₄:Eu³⁺ phosphors show greatly enhanced red emission under 393 and 467 nm-excitation, compared with CaMoO₄:Eu³⁺ without charge compensation. Two approaches to charge compensation, (a) 2Ca²⁺ → Eu³⁺ + M⁺, where M⁺ is a monovalent cation like Li⁺, Na⁺ and K⁺ acting as a charge compensator; (b) 3Ca²⁺ → 2Eu³⁺ + vacancy, are investigated. The influence of sintering temperature and Eu³⁺ concentration on the luminescent property of phosphor samples is also discussed.     

Static energy transfer for Mn : Pr system in Phosphate glasses

The process of energy transfer from divalent manganese to trivalent praseodymium ions is studied with the help of Forster–Dexter theory. Some of the important energy transfer parameters such as transfer probability (P_SA), quantum yield of energy transfer (μ), critical radius (R₀) and critical concentration of the acceptor (C_A) are evaluated for the energy transfer pairs Mn²⁺ : Pr³⁺, Pr³⁺ : Pr³⁺ in phosphate glasses. The transfer of energy from Mn²⁺ to Pr³⁺ was confirmed by recording the fluorescence decay curves of Mn²⁺ emission corresponding to various activator concentrations which show a non-exponential behaviour. Large values of transfer probabilities and transfer efficiencies suggest that Mn²⁺ ion can act as a good sensitizer to Pr³⁺ ion in phosphate glass.     

Surface physical and chemical changes of pure iron after molybdenum ion implantation and their effects on the tribological behaviour I: Physical and chemical analysis

Molybdenum ions generated by a metal vapour vacuum arc (MEVVA) ion source were implanted into pure iron at doses of 1 × 10¹⁷ and 3 × 10¹⁷ ions cm⁻² with an extraction voltage of 45 kV. Auger electron spectroscopy (AES) sputtering depth profiles, X-ray photoelectron spectroscopy (XPS) analysis, X-ray diffraction (XRD) analysis, microhardness and the residual stress of the implanted specimen were studied. The results show that molybdenum atoms exist in the implanted layer at a maximum concentration 20 at.%. A new phase (Fe₃C) is formed in the specimens implanted higher doses due to carbon incorporation during sputtering of the natural oxide film from the implanted surface. The Fe₂Mo phase is formed in both dose regimes. Residual compressive stresses of 310 and 560 MPa were measured on the surfaces of the specimens after molybdenum ion implantation at 1 × 10¹⁷ and 3 × 10¹⁷ ions/cm² respectively due to a local expansion of the lattice in the near-surface region. Due to the existence of residual compressive stress and the formation of the new phases, the microhardness of pure iron specimens was increased from 264 to 325 and 333 kgf mm⁻² by molybdenum ion implantation at 1 × 10¹⁷ and 3 × 10¹⁷ ions cm⁻² respectively.     

Crystal structure, thermal expansion and electrical conductivity of Nd0.7Sr0.3Fe1−xCoxO3 (0≤x≤0.8)

The crystal structure, thermal expansion and electrical conductivity of the solid solution Nd_0.7Sr_0.3Fe_1−xCo_xO₃ for 0≤x≤0.8 were investigated. All compositions had the GdFeO₃-type orthorhombic perovskite structure. The lattice parameters were determined at room temperature by X-ray powder diffraction (XRPD). The pseudo-cubic lattice constant decreased continuously with x. The average linear thermal expansion coefficient (TEC) in the temperature range from 573 to 973 K was found to increase with x. The thermal expansion curves for all values of x displayed rapid increase in slope at high temperatures. The electrical conductivity increased with x for the entire temperature range of measurement. The calculated activation energy values indicate that electrical conduction takes place primarily by the small polaron hopping mechanism. The charge compensation for the divalent ion on the A-site is provided by the formation of Fe⁴⁺ ions on the B-site (in preference to Co⁴⁺ ions) and vacancies on the oxygen sublattice for low values of x. The large increase in the conductivity with x in the range from 0.6 to 0.8 is attributed to the substitution of Fe⁴⁺ ions by Co⁴⁺ ions. The Fe site has a lower small polaron site energy than Co and hence behaves like a carrier trap, thereby drastically reducing the conductivity. The non-linear behaviour in the dependence of log σT with reciprocal temperature can be attributed to the generation of additional charge carriers with increasing temperature by the charge disproportionation of Co³⁺ ions.     

Synthesis and spectral properties of Ce[Ag(CN)2]3

Cerium ion luminescence in crystalline hosts forms the basis of many blue phosphor and scintillator technologies. We report the synthesis of luminescent single crystals of cerium dicyanoargentate. The luminescence properties are characterized using both steady-state and time-resolved spectroscopy. The broad, overlapping dicyanoargentate and Ce³⁺ emissions are decomposed into three Gaussians, revealing the characteristic dicyanoargentate emission at 350 nm while the Ce³⁺ 5d–4f transitions are observed at 359 nm and 391 nm. Excitation measurements show that the 4f–5d Ce³⁺ absorption overlaps the 320 nm emission of the dicyanoargentate ions, leading to a strong coupling between the dicyanoargentate energy donors and Ce³⁺ acceptors. We conclude that the cerium is excited through an energy transfer process from the dicyanoargentate species, resulting in strong room temperature luminescence.     

Spectroscopic evidence of inhomogeneous distribution of Nd in YVO4, YPO4 and YAsO4 crystals

Nd³⁺ : YVO₄ is one of the most interesting laser hosts for micro and diode-pumped solid state lasers. We have studied magnetic and optical properties of Nd³⁺ in three zircon type crystals YMO₄ (M=V, As, P). In particular, Nd³⁺ ions exhibit in the three hosts a multisite character observed in the absorption and emission spectra. However, the emission and its dynamics are strongly dependant on the reabsorption mechanisms. In Nd : YVO₄, single crystals containing 7 ± 1 × 10¹⁸ Nd³⁺ ions/cm³, the lifetime is 95 ± 2 μs in good agreement with the calculated radiative lifetime. Electron Paramagnetic Resonance (EPR) measurements are performed to identify the nature of the different substitution sites for Nd³⁺ ions. Nd³⁺ ions are found to be inhomogeneously distributed in tetragonal D_2d symmetry sites, in isolated ions, “shallow clusters” and pairs. Proportions of the different local environments depend on the total neodymium concentration. For instance, 15% of the Nd³⁺ ions are gathered in Nd³⁺–Nd³⁺ pairs for 7.2 ± 0.2 × 10¹⁹ Nd³⁺ ions/cm³.     

Corrosion of tin in citric acid solution and the effect of some inorganic anions

The corrosion behaviour of tin in different concentrations of citric acid solutions (0.3–1.0 M, pH=1.8) was studied at 30 °C by potentiodynamic technique. The E/I profiles exhibit an active passive behaviour. The active dissolution involves one anodic peak A associated with a dissolution of the metals as Sn(II) species. The passivity is due to the formation of thin film of SnO₂ and or Sn(OH)₄ on the anode surface. The cathodic sweep shows a small peak C related to the reduction of the passive film. The peak current density I_p of peak A increases with increasing both acid concentration and sweep rate.

The effects of adding increasing concentrations of Na₂CrO₄, NaMoO₄, NaNO₃ and NaNO₂ on the corrosion of tin in 0.5 M citric acid at 30 °C were investigated. Both CrO₄²⁻ and MoO₄²⁻ ions inhibit the corrosion of tin and the extent of inhibition enhances with their concentrations. Addition of either NO₃⁻ or NO₂⁻ accelerates the corrosion of tin. NO₃⁻ ions are more aggressive than NO₂⁻ ions.     

Structural properties of swift heavy ion beam irradiated Fe/Si bilayers

The Fe/Si multilayers were prepared by electron beam evaporation in a cryo-pumped vacuum deposition system. Ag⁺ and Au⁺ ions of 100 MeV at two different fluencies such as 1 × 10¹² ions/cm² and 1 × 10¹³ ions/cm² at a pressure of 10^− 7 torr were used to irradiate the Fe/Si samples. The irradiated samples were analyzed by High-Resolution XRD and it reveals that the irradiated films are having polycrystalline nature and it confirms the formation of the β-FeSi₂. The structural parameters such as crystallite size (D), strain (ε) and dislocation density (δ) have been evaluated from the XRD spectrum. The role of the substrates and the influence of swift heavy ions on the formation of β-FeSi₂ have been discussed in this paper.     

Growth and properties of the CuInS2 thin films produced by glancing angle deposition

We use the glancing angle deposition technique (GLAD) to grow CuInS₂ thin films by a vacuum thermal method onto glass substrates. During deposition, the substrate temperature was maintained at 200 °C. Due to shadowing effect the oblique angle deposition technique can produce nanorods tilted toward the incident deposition flux. The evaporated atoms arrive at the growing interface at a fixed angle θ measured from the substrate normal. The substrate is rotated with rotational speed ω fixed at 0.033 rev s^− 1. We show that the use of this growth technique leads to an improvement in the optical properties of the films. Indeed high absorption coefficients (10⁵–3.10⁵ cm^− 1) in the visible range and near-IR spectral range are reached. In the case of the absence of the substrate rotation, scanning electron microscopy pictures show that the structure of the resulting film consists of nanocolumns that are progressively inclined towards the evaporation source as the incident angle was increased. If a rapid azimuthal rotation accompanies the substrate tilt, the resulting nanostructure is composed of an array of pillars normal to the substrate. The surface morphology show an improvement without presence of secondary phases for higher incident angles (θ > 60°).     

Design of the central region for axial injection in the VINCY cyclotron

This paper describes the design of the central region for h = 1, h = 2 and h = 4 modes of acceleration in the VINCY cyclotron. The result which is worth reported in that the central region is unique and compatible with the three above mentioned harmonic modes of operation. Only one spiral type inflector will be used. The central region is designed to operate with two external ion sources: (a) an ECR ion source with the maximum extraction voltage of 25 kV for heavy ions, and (b) a multicusp ion source with the maximum extraction voltage of 30 kV for H⁻ and D⁻ ions. Heavy ions will be accelerated by the second and fourth harmonics, D⁻ ions by the second harmonic and H⁻ ions by the first harmonic of the RF field. The central region is equipped with an axial injection system. The electric field distribution in the inflector and in the four acceleration gaps has been numerically calculated from an electric potential map produced by the program RELAX3D. The geometry of the central region has been tested with the computations of orbits carried out by means of the computer code CYCLONE. The optical properties of the spiral inflector and the central region were studied by using the programs CASINO and CYCLONE respectively. We have also made an effort to minimize the inflector fringe field using the RELAX3D program.