薄膜厚度对ZnO:Ti透明导电薄膜光电性能的影响

利用直流磁控溅射法在室温水冷玻璃衬底上制备出可见光透过率高、电阻率低的掺钛氧化锌(ZnO∶Ti)透明导电薄膜。SEM和XRD研究结果表明,ZnO∶Ti薄膜为六角纤锌矿结构的多晶薄膜,且具有c轴择优取向。讨论了薄膜厚度对掺钛氧化锌透明导电薄膜光学、电学性能的影响。当薄膜厚度为835nm时,薄膜具有最低电阻率3.34×10-4Ω.cm。所制备薄膜附着性能良好,在波长为500～800nm的可见光中平均透过率均超过91%,ZnO∶Ti薄膜可用作薄膜太阳电池和液晶显示器的透明电极。     

H2流量对直流磁控溅射低温沉积ZnO:Al薄膜结构与性能的影响

在Ar和H2的混合气氛下采用直流磁控溅射在玻璃衬底上低温沉积Al掺杂ZnO,即ZnO∶Al透明导电薄膜,研究H2流量(0～10sccm)对薄膜结构、形貌、光学和电学性能的影响。结果表明:不同H2流量下制备的ZnO∶Al薄膜均为高度C轴取向的六角纤锌矿结构,溅射过程中通入适量的H2能改善ZnO∶Al薄膜的结晶质量和表面形貌;所有薄膜在400～900nm范围内的平均透过率均高于85%;随着H2流量的增大,薄膜的载流子浓度升高,电阻率减小,达到10-4Ω.cm数量级。     

低温沉积氧化锌薄膜电学特性

利用金属有机物化学气相沉积系统在玻璃衬底上沉积氧化锌薄膜,在约160℃的低温生长条件下,通过改变n型掺杂气体硼烷的流量来调制薄膜电阻率和光学透过率.基于Hall效应测试分析,研究了掺杂剂硼烷流速对氧化锌薄膜电阻率,载流子浓度,Hall迁移率以及光学透过率的影响,此外还研究了薄膜电学特征参量随薄膜厚度的变化规律.经过一系列优化实验,在玻璃衬底上能够获得低温生长的氧化锌薄膜电阻率约2×10~(-3)Ω·cm,光学透过率的截止波长发生蓝移,从380nm延伸到近340nm.     

用MOCVD方法制备ZnO：B透明导电薄膜及其性能优化

采用金属氧化物化学气相沉积(MOCVD)方法在石英衬底上生长氧化锌(ZnO)薄膜.改变薄膜材料的生长温度和掺杂气体硼烷(B2H6)的流速,制备一系列薄膜样品.通过x-射线衍射(XRD)、扫描电子显微镜(SEM)、透过率、反射率、电阻率和原子力显微镜(AFM)等测试分析,研究了材料生长温度和B2H6流速对薄膜生长速度、微观结构、薄膜晶向、光学透过率、光学禁带宽度、电阻率、表面粗糙度等特征参量的影响,经过优化实验条件,获得薄膜电阻率在10-3Ω·cm量级,可见光区域光学透过率在85%以上,成功制备低电阻率高光学透过率的ZnO透明导电薄膜.     

有机薄膜衬底ITO透明导电膜的制备及光电特性的研究

采用真空反应蒸发技术,在有机薄膜基片上制备出高质量的ITO透明导电薄膜,对薄膜的结构和光电特性进行了研究.制备的最佳薄膜在可见光范围的平均透过率达84%,电阻率为8.23×10-4Ωcm,载流子浓度为1.72×1020cm-3.     

磁控溅射有机聚合物衬底ZnO:Al透明导电膜的结构及光电性能研究

采用射频磁控溅射法在有机薄聚合物膜衬底上制备出铝掺杂的氧化锌 (ZnO :Al)透明导电膜 ,对薄膜的低温制备 (2 5～ 180℃ )、结构和光电特性进行了研究。制备薄膜为多晶膜 ,具有纯氧化锌的纤锌矿结构和 (0 0 2 )择优取向。制备薄膜在可见光区透过率达到 74 % ,最低电阻率为 8.5× 10 -4Ω·cm。     

室温溅射制备氧化锌铝薄膜及电性能研究

采用直流磁控溅射工艺,室温下在载玻片上制备了氧化锌铝透明导电薄膜.研究了溅射功率和氩气压强对薄膜微观结构和电性能的影响.研究表明:溅射功率和氩气压强通过改变晶粒尺寸和晶界所产生的散射作用而影响薄膜的导电性能.溅射功率低于100W时,薄膜的电阻率随功率增加而明显降低,但超过100W后,薄膜的电阻率下降趋缓,并最终趋于平稳;氩气压强在0.6～3.0Pa范围内增大时,薄膜的电阻率先缓慢减小后逐步增大,当氩气压强为1.5Pa时可获得1.4×103Ω·cm的最小电阻率.     

磁控溅射制备柔性衬底ZnO:Ga透明导电膜微结构及性能研究

室温条件下,采用磁控溅射法在有机柔性衬底聚酰亚胺(PI)表面制备出ZnO:Ga透明导电膜,XRD表明ZnO:Ga薄膜为六角纤锌矿结构的多晶薄膜。研究了溅射功率、氩气分压、溅射时间及衬底负偏压等溅射工艺参数对薄膜结构及光电性能的影响,得出最佳溅射参数分别为:功率100W,氩气分压0.1Pa,溅射时间60min,衬底负偏压40V。结果表明:磁控溅射制备的ZnO:Ga膜附着性良好,电阻率为9.4×10~(-4)Ω·cm,可见光透过率为78%。     

柔性衬底硅基薄膜太阳电池阻挡层的研究

研究了不同厚度的ZnO阻挡层对柔性衬底倒结构太阳电池的性能及均匀性的影响。在此基础上,使用金属镍(Ni)代替ZnO作为背电极和硅基薄膜之间的阻挡层,改善了太阳电池的均匀性。在聚酰亚胺柔性衬底上采用PECVD法制备出了面积为4cm×4cm、重量比功率超过200W/kg的倒结构硅基薄膜太阳电池。     

有机薄膜衬底ITO透明导电膜的制备及光电特性的研究

采用真空反应蒸发技术，在有机薄膜基片上制备出高质量的ＩＴＯ透明导电薄膜，对薄膜的结构和光电特性进行了研究。制备的最佳薄膜在可见光范围的平均透过率达８４％，电阻率为８．２３×１０－４Ωｃｍ，载流子浓度为１．７２×１０２０ｃｍ－３。     

退火气氛对Al-F共掺杂ZnO薄膜结构和光电性能的影响

用射频磁控溅射法制备了Al-F共掺杂ZnO（ZnO（Al,F））透明导电薄膜,研究了不同退火气氛对ZnO（Al,F）薄膜的结构、电学和光学特性的影响。结果表明:在真空和还原性气氛中退火后的薄膜透光率呈现"蓝移"趋势,在空气中退火处理后的薄膜透光率则表现为"红移";在真空中,400℃×60min的退火处理,使ZnO（Al,F）薄膜的电阻率降低至1.41×10^-3Ω·cm,透光率则上升到93%以上,有效提高了薄膜的光电特性;所有退火气氛下,薄膜均具有（002）单一择优取向的多晶六方纤锌矿结构;薄膜的晶粒尺寸为25～30nm。     

Low temperature Si doped ZnO thin films for transparent conducting oxides

Si doped zinc oxide (SZO, Si 3%) thin films are grown at low substrate temperature (T≤150 °C) under oxygen atmosphere, using pulsed laser deposition (PLD). Si addition leads to film amorphization and higher densification. Hall effect measurements indicate a resistivity of 7.9×10⁻⁴ Ω cm for SZO thin films deposited at 100 °C under optimized 1.0 Pa oxygen pressure. This value is in good agreement with optical resistivity simulated from the transmittance spectra. XPS measurements suggest more than one oxygen environment, and a Si oxidation state lying in between 2 and 3 only. As a matter of fact, the values of both measured and simulated carrier numbers are smaller than the ones expected, assuming that all Si cations in the ZnO matrix are at the 4⁺ oxidation state. Finally, the differences in the electrical and optical properties of SZO thin films deposited both on glass and PET substrates confirm the strong dependency of the electronic properties to the film crystallinity and stoichiometry in relationship with the substrate nature.     

Si doped ZnO thin films for transparent conducting oxides

Abstract

Transparent conductive silicon doped zinc oxide (SZO, 3%Si) thin films are grown by direct current magnetron sputtering on glass substrates at room temperature. Experimental results show that the sputtering time has a significance impact on the growth rate, crystal quality and electrical properties of the films, and have little impact on the optical properties of the films. The growth rate decreases with the sputtering time. The resistivity of ZnO/Si films decreases as the sputtering time increases from 8 to 20 min. However, as the sputtering time increases further, the electrical resistivity increases instead. When other sputtering conditions are kept unchanged, it is found that the optimum sputtering time is 20 min and the achieved lowest resistivity is 4·92×10^?4 Ω cm (sheet resistance?=?11·5 Ω/sq for thickness 427·5 nm). The UV-vis transmission spectrum shows that all film samples present a transmission of above 90·0% in the visible range.     

ZnO:Al绒面透明导电薄膜的制备及分析

利用中频脉冲磁控溅射方法,采用Al掺杂(质量百分比2%)的Zn(纯度99.99%)金属材料为靶材制备平面透明导电ZnO:Al(ZAO)薄膜。利用湿法腐蚀方法,将平面ZAO薄膜在0.5%的稀盐酸中浸泡一定时间后,形成表面凹凸起伏的绒面结构。研究了平面ZAO薄膜的结构特性以及衬底温度、溅射功率和腐蚀时间对绒面ZAO薄膜表面形貌的影响,并对腐蚀前后薄膜的电阻变化进行了分析。结果表明:高温、低功率条件下制备的绒面ZAO薄膜表面形貌较好,在硅薄膜太阳电池中具有潜在的应用前景。     

Thickness dependence of ZnO:In thin films doped with different indium compounds and deposited by chemical spray

Indium-doped zinc oxide thin films were deposited on glass substrates by the chemical spray technique. Hydrated zinc 2,4-pentanedionate was used as zinc source. Four different indium compounds were separately used as dopants (indium nitrate, indium sulfate, indium acetate, and indium chloride). The effect of the thickness on the electrical, structural, morphological and optical characteristics of ZnO:In thin films was studied. Electrical resistivity values corresponding to good conductive electrodes were obtained irrespective of the indium compound used, although a decrease in electrical resistivity is found in all the cases as the film thickness increases, reaching a saturation value of 2×10⁻³ Ω cm. All films were polycrystalline with a wurtzite phase, and exhibited a (1 0 1) preferential orientation almost irrespective of neither the doping source nor thickness. The surface morphology was analyzed by scanning electron microscopy and a strong dependence on the indium compound and thickness was found, since grain geometry variations from rounded to rod-like forms were observed. As the film thickness increases, the film transmittance and the band-gap values decrease. Band-gap energy values were in the range of 3.21 to 3.44 eV.     

Substrate temperature and thickness dependence of properties of boron and gallium co-doped ZnO films

Transparent conducting oxide films of boron and gallium co-doped ZnO (BGZO) were prepared on glass substrates by radio frequency magnetron sputtering at room temperature and 200°C, respectively. The dependence of structural, electrical and optical properties on the thickness and substrate temperature were investigated. All films demonstrated c-axis preferred orientation and showed highly transparent in the visible wavelength region. With the increase thickness and substrate temperature, the grain size of BGZO films increased and the full width at half maximum decreased, the carrier mobility increased and resistivity decreased, which indicated that the crystallinity and conductivity of films were improved. The research also found that the optical band gap (E_g) of BGZO thin films decreased with increased substrate temperature and thickness.     

Transparent conductive Ga-doped ZnO/Cu multilayers prepared on polymer substrates at room temperature

In order to improve the transparency and durability of the Cu films deposited on polycarbonate (PC) substrates, a Ga-doped ZnO (GZO) layer could be deposited directly onto the Cu film. Compared with a single-layered GZO film, the GZO/Cu multilayer coatings have much lower sheet resistance and much thinner thickness. In our work, GZO/Cu multilayers were deposited by magnetron sputtering on PC substrates at room temperature. The structural, electrical, and optical properties of multilayers were investigated at various thicknesses of the Cu and GZO layers. As the Cu layer thickness increases, the resistivity decreases. As the GZO layer thickness increases, the resistivity increases. And we obtained that the transmittance of the GZO/Cu multilayer coatings was higher than that of the single Cu layer. The lowest resistivity of 5.7×10⁻⁵ Ω cm with a carrier concentration of 3.25×10²² cm⁻³ was obtained at the optimum Cu (12 nm) and GZO (10 nm) layer thickness. The best figure of merit φ_TC is 4.66×10⁻³ Ω⁻¹ for the GZO(30 nm)/Cu(12 nm) multilayer.     

Exploration and optimization of ZrCo(Ti) type film for high hydrogen density and thermal stability of the hydride

Tritium target is of crucial importance in relation to the development of neutron generator apparatus. However, the prevalent Ti target is now suffering from the intricate procedures for activation, limited tritium content at room temperature (RT) and poor ability to fix the helium. Herein, a succession of new type ZrCo(Ti) alloy targets were designed and fabricated by magnetron sputtering. Firstly, the influence of technological parameters (types of substrate, sputtering temperatures, sputtering time and annealing temperatures) on the assemblage and also the hydrogen storage properties of the ZrCo films were systemically studied. The results show that high sputtering temperature is benefit to acquiring high crystallinity of ZrCo films, but the substrates seem to have no significant effect on that. The thickness and grain size of ZrCo film are both positively related to the sputtering time. However, the hydrogen uptake capacities (0.14 wt%~0.79 wt%) for all the prepared ZrCo films are relatively low. After that, the composition and microstructure of the ZrCo films were further regulated and optimized. On the one hand, Zr_1-xTi_xCo films were constructed by introduction of Ti element, achieving a higher hydrogen absorption capacity (~0.7 wt%), but with weak thermal stability in the subsequent hydrogen desorption process (~80% of hydrogen escaped at 500 °C). On the other hand, the surface of the ZrCo film was modified by a thin layer of Ti, forming a serious of double-layer ZrCo/Ti films. The ZrCo/Ti composite films not only achieve extremely high hydrogen storage capacity (1.85 wt%), but also maintain strong thermal stability (only 15.7% of hydrogen escaped at 500 °C). These findings related to the ZrCo(Ti) films in this paper provide crucial reference for the development of tritiated ZrCo film targets, and spark inspiration even for the design of other new-type tritiated film target.     

Structural, morphological, optical and electrical properties of CdTe films deposited by CSS under an argon-oxygen mixture and vacuum

CdTe thin films were deposited by CSS at a pressure of 1 mbar, under different mixtures of argon and oxygen and in vacuum, on glass substrates. The samples were prepared under three source-substrate temperature conditions. The films were characterized by X-ray diffraction, UV-vis spectroscopy, SEM and two-probe resistivity. XRD patterns indicated that the films grown at low oxygen content and source temperature of 550 °C with substrate temperature of 400 °C showed a high preferential orientation in the (1 1 1) plane. The crystalline grain size was between 31 and 40 nm. The films had a direct band gap in the range 1.44-1.49 eV. SEM images showed higher aggregate sizes for the films deposited at higher temperatures and grain size decreases as oxygen content increases. The resistivity of the films was around 1×10⁶ Ω cm.