Structure and piezoelectric properties of (1–x)K0.5Na0.5NbO3–xLiBiO3 lead-free piezoelectric ceramics

Lead-free piezoelectric ceramics (1–x)(K_0.5Na_0.5)NbO₃–xLiBiO₃ [(1–x)KNN–xLB] (x=0, 0.0005, 0.002, 0.004, 0.006, 0.008, 0.010) were prepared by an traditional solid-state reaction. The microstructure and electrical properties of the ceramics were investigated. The results show that all (1–x)KNN–xLB ceramics possess pure perovskite structure when x=0.01, no trace of any secondary phase is detected, and the phase structure of the ceramics transits abnormally from orthorhombic to cubic. With the increase of the LB content, the size of grain gradually becomes small, the piezoelectric constant d₃₃ and the planar electromechanical coupling coefficient k_p first increases and then decreases. The d₃₃ and k_p of the ceramics reach their maximum values 115 pC/N at x=0.002 and 0.2701 at x=0.001, respectively. The dielectric constant e_r of the ceramics firstly increases evidently and then decreases with the increase of x, the maximum value 871.8 is obtained at x=0.006.     

(Bi0.5Na0.5)TiO3-Ba(Ti,Zr)O3固溶体无铅压电陶瓷

改善烧结制度制备(Bi0.5Na0.5)TiO3-Ba(Ti,Zr)O3(简称BNT-BZT)系无铅压电陶瓷,能得到较高的致密度.该压电陶瓷具有良好的电学性能.电学性能的最佳成分点位于准同型相界附近四方相的区域,组成为(Bi0.5Na0.5)TiO3-xBa(TiyZr)O3x=0.09～0.12的范围内,此时具有最大的压电常数(d33=147pC/N)和室温介电常数(ε33T/ε0=881.4).BNT-BZT陶瓷体系的机电耦合系数Kp受BZT含量的影响较小,而BZT含量对机械品质因数Qm的影响较大.     

(Bi0.5Na0.5)TiO3陶瓷电容器介质的制备与研究

报道了掺杂BaTiO3和CeO2对(Bi0.5Na0.5)TiO3材料介电性能的影响.运用所研究材料的一系列取代反应,对实验结果进行了解释,并由介电温谱(升温)分析了材料从室温到400℃的相变化.实验结果显示当材料中掺杂6%(原子分数)BaTiO3与0.5%(原子分数)CeO2时,试样于1160℃保温2h,获得了性能优良的介质材料,其介电系数和介质损耗分别为1620和1.80%;BaTiO3的加入能提高材料的介电性能,而CeO2的加入则使材料的损耗进一步降低并使介电峰展宽.     

镧掺杂(Na0.5Bi0.5)TiO3压电陶瓷的结构与性能

采用传统陶瓷工艺制备了镧掺杂(Na0.5Bi0.5)TiO3无铅压电陶瓷,研究了材料的结构、介电和压电性能.发现镧掺杂有利于生成稳定的钙钛矿结构,促进了晶粒生长.镧掺杂(Na0.5Bi0.5)TiO3陶瓷表现出明显的弛豫特性,当镧掺杂量为5mol%时,1200℃烧结样品室温下的介电常数从630提高到855,介电损耗从5.2%减小到3.3%.适量的镧掺杂大幅降低了材料的电导率,最佳的掺杂量为1 mol%,测量温度为75℃时,该配方1200℃烧结样品的电导率σ仅为7.75148×10-13S·cm-1,同掺杂前的9.50827×10-11 S·cm-1前相比减小了3个数量级.     

Polarization fatigue in Pb(In0.5Nb0.5)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 single crystals

Electric fatigue tests have been conducted on pure and manganese-modified Pb(In_0.5Nb_0.5)O₃–Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ (PIN–PMN–PT) single crystals along different crystallographic directions. Polarization degradation was observed to suddenly occur above 50–100 bipolar cycles in 〈1 1 0〉 oriented samples, while 〈0 0 1〉 oriented samples exhibited almost fatigue free characteristics. The fatigue behavior was investigated as a function of orientation, magnitude of the electric field and manganese dopant. It was found that 〈0 0 1〉 oriented PIN–PMN–PT crystals were fatigue free, due to its small domain size, being on the order of 1 μm. The 〈1 1 0〉 direction exhibited a strong electrical fatigue behavior due to mechanical degradation. Micro/macro cracks developed in fatigued 〈1 1 0〉 oriented single crystals. Fatigue and cracks were the result of strong anisotropic piezoelectric stress and non-180° domain switching, which completely locked the non-180° domains. Furthermore, manganese-modified PIN–PMN–PT crystals were found to show improved fatigue behavior due to an enhanced coercive field.     

BaTiO_3-Na_(0.5)Bi_(0.5)TiO_3无铅PTCR陶瓷研究

以BaTiO_3-Na_0.5Bi_0.5TiO_3(BT-NBT)陶瓷系统为研究对象,采用固相法制备了(1-x)BT+xNBT(0.01＜x＜0.06)系统陶瓷.通过DSC、XRD、SEM等分析手段研究了NBT的加入量以及烧成气氛对BaTiO_3基PTCR陶瓷的显微结构及阻温特性的影响.研究结果表明:加入低含量(x＜0.03)NBT时,能明显提高烧成陶瓷的居里温度(T_c),当加入x=0.01NBT时,T_c提高到150 ℃.氮气中烧成的陶瓷室温电阻率低于空气中烧成的,但其PTC效应减弱.     

Mn掺杂(Na1-xKx)0.5Bi0.5TiO3性能研究及其在滤波器上的应用

研究了Mn掺杂对(Na1-xKx)0.5Bi0.5TiO3无铅压电陶瓷性能的影响,并利用该材料研制出中频无铅压电陶瓷滤波器.Mn掺杂改善了(Na0.8K0.2)0.5Bi0.5TiO3体系陶瓷的压电性能,当Mn含量达到0.3%(质量分数)时,d33达到135 pC/N,kp=31%,Qm=183,适用于制作滤波器.采用厚度振动模式,制作出插入损耗为5 dB,中心频率为520 kHz,带宽大于10 kHz,阻带衰耗大于30 dB的中频无铅压电陶瓷滤波器.器件性能接近于同类含铅陶瓷中频滤波器(SFH系列).     

(0.96Bi_(0.5)Na_(0.5)TiO_3~-0.04BaTiO_3)-(0.98K_(0.5)Na_(0.5)NbO_3~-0.02LiTaO_3)无铅压电陶瓷的结构分析与性能研究

研究了(1-x)(0.96Bi_0.5Na_0.5TiO_3-0.04BaTiO_3)-x(0.98K_0.5Na_0.5NbO_3-0.02LiTaO_3)(BNTBT-KNNLT)体系在0≤x≤0.07这一组分区域的结构和性能.X射线衍射谱发现,这一系列组分在室温下形成纯钙钛矿型固溶体,没有其他杂相产生.(111)峰的峰位和峰形随组分的变化有规律的变化.随着KNNLT组分的加入,压电及介电等性能有比较明显的改变.压电性能随KNNLT的加入出现最大值.当x=0.02时,压电常数d_(33)=125 pC/N.介电常数在室温下随组分的增加而增加.电滞回线的结果显示,尽管在BNTBT中掺杂了KNNLT,这一系列的压电陶瓷仍然具有较大的矫顽场.当x=0.02时,室温下介电常数和剩余极化强度分别为:ε_r=1455,P_r=32.3 μC/cm~2.实验结果表明适量的KNNLT掺杂进BNTBT中可以改善BNTBT的压电和介电性能.     

铋基无铅压电陶瓷Bi0.5(Na0.82K0.18)0.5TiO3-BiCrO3的微观组织与电性能

采用传统陶瓷制备方法,制备一种新型无铅压电陶瓷 (1-x)Bi0.5(Na0.82K0.18)0.5TiO3-xBiCrO3 (BNKT-BCx).研究Bi基铁电体BiCrO3对BNKT-BCx陶瓷晶体结构和压电介电性能的影响.结果表明:在所研究的组成范围内,陶瓷材料的主体结构为纯钙钛矿固溶体,微量BiCrO3(x=0～0.02,摩尔分数)不改变陶瓷的晶体结构;当BiCrO3含量x＞0.02时,晶体结构由三方、四方共存转变为伪立方结构,并出现明显的第二相;当x=0.015时,d33=168 pC/N;当x=0.01时,kp=0.32,为该体系压电性能的最大值;随BiCrO3含量的增加,陶瓷的低温介电反常峰向低温移动,高温介电反常峰向高温移动,反铁电相区域增加,弥散指数增加.     

高压合成Sr_(0.5-x)Co_xBi_(0.5)FeO_3的物理性能

正东京大学化学研究所Pemg XIONG等人采用高压合成法制造Sr_(0.5-x)Co_xBi_(0.5)FeO_3,SXRD测定表明是钙钛矿型晶体,x=0.1~0.2时,由菱形六面体转变为正交系晶体。穆斯堡尔谱线表明,常温下固溶呈现异常高价位Fe~(3.5+)。Fe~(3.5+)当0.0≤x≤0.4时,出现电子不稳定性,发生3∶1CD(Fe~(3.5+)→3/4Fe~(3+)+1/     

Sm_(0.5)Ca_(0.5)MnO_3薄膜的光诱导弛豫特性(英文)

采用射频磁控溅射方法在LaAlO3（100）基片上制备了电荷有序态锰氧化物Sm0．5Ca0.5MnO3薄膜,X射线衍射分析表明所制备薄膜具有较好的外延特性。测试了薄膜的低电阻-温度关系,表明薄膜在测量温度范围内呈现半导体导电特性。施加磁场和激光辐照均可引起电荷有序态的退局域化,从而导致电阻减小。研究了激光诱导电阻变化弛豫特性,表明电阻随时间的变化符合指数关系,通过拟合得到的时间常数随着温度的升高而增加,分析表明其主要可归结于外在热效应的影响。     

Preparation and properties of （K0.5Na0.5）NbO3-LiNbO3 ceramics

The lead-free piezoelectric ceramics （1-x）（K0.5Na0.5）NbO3-xLiNbO3（abbreviated as KNLN） were synthesized by a traditional solid state reaction. The effects of Li^＋ on the sintering characteristic, the phase structure and piezoelectric properties of KNLN ceramics were investigated. The sintering temperature of KNN-based ceramics is decreased by doping Li^＋ and the range of the sintering temperature is narrow. The KNLN ceramics exhibit an enhanced piezoelectric properties with the piezoelectric constant d33 value of 180-200 pC/N, The electromechanical coupling coefficients kp is 35%-40%. The results show that （1-x）（K0.5Na0.5）-NbO3-xLiNbO3 （x=0.05, 0.06） is a promising high-temperature lead free piezoelectric ceramic.     

Bi_(0.5)Na_(0.5)TiO_3-SrZrO_3无铅陶瓷的铁电和压电性能(英文)

采用固相反应法制备Bi0.5Na0.5TiO3-SrZrO3(BNT-SZ100x,x=0-0.15)无铅陶瓷,通过XRD、SEM和电致应变等手段对其进行表征。XRD分析表明样品的第二相为纯钙钛矿型。铁电致应变曲线表明:当SZ添加到BNT陶瓷中,铁电顺序被破坏。当添加5%(摩尔分数)SZ时,剩余极化强度和压电常数的最大值分别为32μC/cm2和102 pC/N。BNT-SZ9样品的电致应变(Smax)和归一化应变(Smax/Emax=d*33)的最大值分别为0.24%和340 pm/V。     

含有弥散离子液体的Bi_(0.5)Sb_(0.5)Te_3烧结体

正日本大阪大学工科研究科勝山茂等人在573K用热压法合成Bi0.5Sb0.5Te3-BMImTFSI烧结体,并对其微结构和热电性进行研究,用扫描电镜观测烧结体断面。热电性能测定结果表明,随BMImTFSI含量增多,塞贝克系数缓慢降低,电阻率增高,而含0.1mL BMImTFSI的烧结体,比单纯Bi0.5Sb0.5Te3的电阻率高2     

Effect of Rare Earth Doping on Impedance,Modulus and Conductivity Properties of Multiferroic Composites:0.5(BiLa_xFe_(1-x)O_3)–0.5(PbTiO_3)

The Lanthanum-doped bismuth ferrite–lead titanate compositions of 0.5(Bi LaxFe1-xO3)–0.5(Pb Ti O3)(x = 0.05,0.10,0.15,0.20)(BLxF1-x-PT) were prepared by mixed oxide method.Structural characterization was performed by X-ray diffraction and shows a tetragonal structure at room temperature.The lattice parameter c/a ratio decreases with increasing of La(x = 0.05–0.20) concentration of the composites.The effect of charge carrier/ion hopping mechanism,conductivity,relaxation process and impedance parameters was studied using an impedance analyzer in a wide frequency range(102–106Hz) at different temperatures.The nature of Nyquist plot confirms the presence of bulk effects only,and non-Debye type of relaxation processes occurs in the composites.The electrical modulus exhibits an important role of the hopping mechanism in the electrical transport process of the materials.The ac conductivity and dc conductivity of the materials were studied,and the activation energy found to be 0.81,0.77,0.76 and 0.74 e V for all compositions of x = 0.05–0.20 at different temperatures(200–300 °C).     

(1-x)K_(0.5)Na_(0.5)NbO_3-xLiBiO_3无铅压电陶瓷的结构与压电性能(英文)

采用传统固相反应制备了(1-x)(K0.5Na0.5)NbO3–xLiBiO3[(1–x)KNN–xLB](x=0,0.0005,0.001,0.002,0.004,0.006,0.008,0.010)压电陶瓷,并分析研究了其微结构及电性能。结果表明,LB 掺杂的 KNN 陶瓷主要形成了钙钛矿结构,没有检测到第二相的存在,并且陶瓷的相结构出现直接由正交相过渡到立方相的"反常"转变;随着LB 掺杂量的增加,晶粒尺寸逐渐细化,陶瓷的压电常数d33、平面机电耦合系数kp先略有增加后显著下降,且分别在x=0.002和 x=0.001时达到最大值,分别为115pC/N和0.2701;陶瓷的介电常数εr随x增大先增加后略有降低,当 x=0.006时获得最大值,为871.8。     

退火温度对(Pb_(0.5)Sr_(0.5))TiO_3薄膜光学性能的影响(英文)

以三水醋酸铅、醋酸锶、钛酸丁酯为原料,乙二醇甲醚、去离子水、乙酰丙酮做溶剂。用溶胶-凝胶法制备(Pb0.50Sr0.50)TiO3 (PST)前驱体溶液,通过旋涂工艺在石英玻璃基片上沉积 PST 薄膜。薄膜经 650 至 800 ℃退火 30 min,升温速率为 3℃/min。不同温度晶化的 PST 薄膜用 X 射线衍射测量其晶体结构,用原子力显微镜观测其表面形貌。不同温度退火薄膜的光学透射谱用双光束紫外-可见光分光光度计测量。薄膜的吸收边,即带隙能可以根据直接跃迁估计。650、700、 750 和 800℃退火的薄膜样品的直接带隙能分别为 3.74、3.75、3.76 和 3.75 eV。     

Microstructure and electrical properties of Ti-modified (Na0.5K0.5)(TiχNb1-χ)O3 lead-free piezoelectric ceramics

Ti-Modified (Na0.5K0.5)(TixNb1-x)O3 (NKNT) piezoelectric ceramics were fabricated by double-layer buffed powder process at 1020℃ for 2 h. The microstructures, and piezoelectric and dielectric properties of the lead-free NKNT ceramics were investigated. X-ray diffraction re-suits indicated that Ti4+ had diffused into the (Na0.5K0.5)NbO3 lattices to form a solid solution with a perovskite structure. The introducing of Ti into the (Na0.5K0.5)NbO3 solid solution effectively reduced the sintering temperature and densified the microstructure with a decreased grain size. The highest relative density reached more than 90%. The highest piezoelectric dielectric coefficient d33 and planar mode electro mechanical coupling coefficient kp were 110 pC/N and 19.5%, which were obtained in the NKNT ceramic with 1 mol% Ti. The piezoelectric properties of the NKNT ceramics were enhanced by aging in air for a period of time owing to the compensation of oxygen vacancies.     

Zr掺杂改性(Bi0.5Na0.5)0.91Pr0.02Ba0.07TiO3无铅铁电陶瓷的储能行为研究

通过固相烧结法微量掺杂Zr到(Bi0.5Na0.5)0.91Pr0.02Ba0.07TiO3无铅铁电陶瓷,对其相结构、微观形貌、储能行为及介电行为进行了研究。所有的样品都形成了单一的钙钛矿相,晶粒细小均匀。Zr的掺杂有效地提高了击穿场强,掺杂量为0.03 mol时陶瓷在场强138 kV/cm下最大有效储能密度达到1.38 J/cm3,储能效率达到52.44%,同时显示了稳定的高温铁电特性,并获得了较大的介电常数1150且保持稳定。