Properties of ITO：Zr films deposited by co-sputtering

ITO：Zr films were deposited on glass substrate by co-sputtering with an ITO target and a Zirconium target. Substrate temperature and oxygen flow rate have important influences on the properties of ITO：Zr films. ITO：Zr films show better crystalline structure and lower surface roughness. Better optical-electrical properties of the films can be achieved at low substrate temperature. The certain oxygen flow rates worsen the electrical properties but can enhance the optical properties of ITO：Zr films. The variation in optical band gap can be explained on the basis of Burstin-Moss effect.     

Electrical and optical properties of ITO and ITO:Zr transparent conducting films

ITO and ITO:Zr films were deposited on glass substrates by magnetron sputtering. Electrical and optical properties of the films at different experiment parameters such as substrate temperature, oxygen flow rate and annealing temperature were contrastively studied. The increase in substrate temperature remarkably improves the electrical and optical properties of the films. ITO:Zr films show better quality at low substrate temperature. The excessive oxygen can worsen the optical properties of the films. Better optical–electrical properties of the films can be achieved after the proper annealing treatment. Obvious Burstin–Moss effect can be revealed by transmittance spectra with different parameters, and the direct transition models show the change of optical band gap. ITO:Zr films prepared by co-sputtering show better optical–electrical properties than ITO films.     

一种新型透明导电氧化物薄膜—ITO∶Ta

利用磁控溅射,在玻璃基底上沉积了ITO∶Ta薄膜。研究了在不同衬底温度下ITO和ITO∶Ta薄膜的光电性能。高价金属元素Ta掺杂促进薄膜晶化的同时,导致了(400)晶面择优取向的形成。低温沉积的ITO∶Ta薄膜比ITO薄膜展示了较好的光电性能,Ta掺杂使得室温沉积ITO薄膜的效益指数分别由0.003×10-3Ω-1上升到了0.880×10-3Ω-1。透射谱表明,参数的变化引起明显的Burstin-Moss效应,通过直接跃迁的模型研究了光学禁带的变化。     

退火温度对ZnO掺杂ITO薄膜性能的影响

利用电子束蒸镀方法,在K8玻璃衬底上沉积ZnO掺杂ITO(ZnO-ITO)与ITO薄膜。研究不同退火温度对ZnO-ITO薄膜的微观结构的影响;对比分析了在不同退火温度条件下,ZnO-ITO和无掺杂ITO薄膜的光电性能。结果发现,ZnO-ITO薄膜具有较大的晶粒尺寸,随着退火温度的上升,晶体结构得到改善,表面粗糙度减小,薄膜的光电性能显著提高。ZnO-ITO薄膜经过500℃退火后得到最佳的综合性能,其表面均方根粗糙度(RMS)为32.52nm,电阻率为1.43×10-4Ω.cm;对442nm波长的光,透射率可达98.37%;与ITO薄膜相比,ZnO-ITO薄膜具有显著的抗PEDOT:PSS溶液腐蚀的能力。     

Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films

In this paper, indium tin oxide (ITO) targets with different densities were used to deposit ITO thin films. The thin films were deposited from these targets at room temperature and annealed at 750°C. Microstructural, electrical, and optical properties of the as-prepared films were studied. It was found that the target density had no effect on the properties or deposition rate of radiofrequency (RF)-sputtered ITO thin films, different from the findings for direct current (DC)-sputtered films. Therefore, when using RF sputtering, the target does not require a high density and may be reused.     

Optical and electrical properties of crystalline indium tin oxide thin film deposited by vacuum evaporation technique

Indium tin oxide (ITO) thin film was deposited on glass substrate by means of vacuum evaporation technique and annealed at 200 °C, 300 °C and 400 °C in air for 1 h. The characterization and properties of the deposited film samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), and UV-VIS-NIR spectroscopy techniques. From the XRD patterns, it was found that the deposited thin film was of crystalline at an annealing temperature of 400 °C. The crystalline phase was indexed as cubic structure with lattice constant and crystallite size of 0.511 nm and 40 nm, respectively. The SEM images showed that the films exhibited uniform surface morphology with well-defined spherical grains. The optical transmittance of ITO thin film annealed at 400 °C was improved from 44% to 84% in the wavelength range from 250 nm to 2 100 nm and an optical band gap was measured as 3.86 eV. Hall effect measurement was used to measure the resistivity and conductivity of the prepared film.     

Effect of thickness on optoelectrical properties of Nb-doped indium tin oxide thin films deposited by RF magnetron sputtering

Niobium-doped indium tin oxide （ITO:Nb） thin films are prepared on glass substrates with various film thicknesses by radio frequency （RF） magnetron sputtering from one piece of ceramic target material. The effects of thickness （60-360 nm） on the structural, electrical and optical properties of ITO: Nb films are investigated by means of X-ray diffraction （XRD）, ultraviolet （UV）-visible spectroscopy, and electrical measurements. XRD patterns show the highly oriented （400） direction. The lowest resistivity of the films without any heat treatment is 3.1×10^-4 Ω·cm^-1, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 17.6 N·S and 1.36×10²¹ cm^-3, respectively. Band gap energy of the films depends on substrate temperature, which varies from 3.48 eV to 3.62 eV.     

Influence of deposition rate on the structural,optical and electrical properties of electron beam evaporated SnO2 thin films for transparent conducting electrode applications

The role of deposition rate in the structural,optical and electrical properties of SnO2 thin films deposited by electron beam evaporation method is investigated by varying the deposition powers viz.50,75,and 100 W.The structural characterization of the films is done by X-ray diffraction (XRD) technique.The surface morphology of the films is studied by scanning electron microscopy (SEM).Rutherford back scattering (RBS) measurements revealed the thickness of the films ranging from 200 nm to 400 and also a change in the concentration of oxygen vacancies which is found to be the maximum in the film deposited at the lowest deposition rate.Optical absorption spectrum is recorded using the UV-V is spectroscopy and the films are found to be transparent in nature.A shift in the absorption edge is observed and is attributed to a different level of allowed energy states in conduction band minimum.The Hall effect and electrical measurements show a variation in the carrier concentrations,mobility and resistivity of the films.In order to explore a better compromise in electrical and optical properties for transparent electrode applications,skin depths calculations are also done to find the optimized values of carrier concentration and mobility.     

Pulsed laser deposition of ITO thin films and their characteristics

The indium tin oxide (ITO) thin films are grown on quartz glass substrates by the pulsed laser deposition method. The structural, electrical, and optical properties of ITO films are studied as a function of the substrate temperature, the oxygen pressure in the vacuum chamber, and the Sn concentration in the target. The transmittance of grown ITO films in the visible spectral region exceeds 85%. The minimum value of resistivity 1.79 × 10⁻⁴ Ω cm has been achieved in the ITO films with content of Sn 5 at %.     

Deposition and characterization of indium oxide and indium tin oxide semiconducting thin films by reactive thermal deposition technique

In this paper, the deposition conditions and the characterization properties of the indium oxide (10) and indium tin oxide (ITO) thin films deposited by a reactive thermal deposition technique using the indium, indium-tin alloy sources are reported. The actively involved parameters during deposition have been identified for various substrate temperatures. The effect of oxygen partial pressure in evaporation has been identified. The indium-tin alloy source which was used in this work was prepared by hot zone diffusion technique. The structural, optical, and electrical properties have been characterized using optical microscope, x-ray diffractometer, ultraviolet spectrophotometer, and Hall effect measurement setup. The uniformity of the deposited films and the uniformity of the substrate surface effect on the deposited thin films were analyzed through sheet resistance measurements. The depositions were carried out on glass and quartz substrates. Good optical transmittance (99%) was achieved for 740 nm wavelength and above. The absorbance spectrum exhibit a value of 2% absorbance for IO/quartz structures. Large area (5.0 × 3.8 cm) film with unique optical properties is also reported here.     

Influence of monomer concentration on optical properties of electrochemically synthesized polypyrrole thin films

Polypyrrole(PPy) thin films were deposited on stainless steel and ITO coated glass substrate at a constant deposition potential of 0.8 V versus saturated calomel electrode(SCE) by using the electrochemical polymerization method.The PPythin filmswere deposited at room temperatureat variousmonomer concentrations ranging from 0.1 M to 0.3 M pyrrole.The structural and optical properties of the polypyrrole thin films were investigated using an X-ray diffractometer(XRD),FTIR spectroscopy,scanning electron microscopy(SEM),and ultraviolet– visible(UV–vis) spectroscopy.The XRD results show that polypyrrole thin films have a semi crystalline structure.Higher monomer concentration results in a slight increase of crystallinity.The polypyrrole thin films deposited at higher monomer concentration exhibit high visible absorbance.The refractive indexes of the polypyrrole thin films are found to be in the range of 1 to 1.3 and vary with monomer concentration as well as wavelength.The extinction coefficient decreases slightly with monomer concentration.The electrochemically synthesized polypyrrole thin film shows optical band gap energy of 2.14 eV.     

快速热退火对ITO薄膜及LED芯片性能的影响

采用金属有机化学气相沉积(MOCVD)技术在蓝宝石衬底上制备了GaN基LED外延层,采用磁控溅射法制备了氧化铟锡(ITO)薄膜,ITO薄膜用于制作与p-GaN的欧姆接触.研究了快速热退火温度为550℃,退火时间为200 s时,不同氧气体积流量对ITO薄膜性能及LED芯片光电性能的影响.结果表明:不通氧气时,ITO薄膜的方块电阻和透过率分别为33 Ω/口和93.1％,LED芯片出现电流拥挤效应,其电光转换效率只有33.3％;氧气体积流量为1 cm3/min时,ITO薄膜的方块电阻和透过率分别为70 Ω/口和95.9％,LED芯片的电流扩展不佳,其正向电压较高,电光转换效率为43.8％;氧气体积流量为0.4 cm3/min时,ITO薄膜的方块电阻和透过率分别为58 Ω/口和95.4％,LED芯片的电流扩展最佳,其亮度最高、正向电压最低,电光转换效率较高,为52.9％.     

射频溅射功率对非晶Zn-Sn-O薄膜性能的影响

使用射频磁控溅射法,基于不同溅射功率(58、79、116、148和171W)条件在玻璃基底上室温制备了Zn-Sn-O(ZTO)薄膜,并探讨了溅射功率对薄膜的结构、电学性能和光学性能的影响。结果表明,提高溅射功率有助于提升薄膜的沉积速率;XRD分析表明不同溅射功率条件下制备的ZTO薄膜均具备稳定的非晶结构;随着溅射功率的增加,薄膜的电阻率下降,光学吸收边“红移”(光学禁带宽度从3.77eV减小到3.62eV);整体来看,在58~148W溅射功率范围内制备的ZTO薄膜具备较好的可见光透明性,其在380~780nm可见光范围内的平均透过率均超过85%。     

Solution flow rate influence on properties of copper oxide thin films deposited by ultrasonic spray pyrolysis

The present work is an investigation of the solution flow rate influence on copper oxide (CuO) thin film properties deposited by ultrasonic spray pyrolysis. A set of CuO thin films were deposited, with various solution flow rates, on glass substrate at 300 °C. The precursor solution is formed with copper salt dissolution in distilled water with 0.05 molarity. The solution flow rate was ranged from 10 to 30 ml/h. Films composition and structure were characterized by means of XRD (X Rays diffraction) and Raman scattering. The optical properties were studied using UV–visible spectroscopy. The electrical conductivity, carrier mobility and concentration were determined by Hall Effect measurements. The obtained results indicate that flow rate is a key parameter controlling CuO films growth mechanism and their physical properties. The prepared films are mainly composed with a CuO monophase, the crystallite size is reduced with increasing the flow rate. A ZnO/CuO heterojunction structure has been realized and its rectifying behavior is tested.     

Indium Tin Oxide Thin Films Grown on Polyethersulphone (PES) Substrates by Pulsed‐Laser Deposition for Use in Organic Light‐Emitting Diodes

High quality indium tin oxide (ITO) thin films were grown by pulse laser deposition (PLD) on flexible polyethersulphone (PES) substrates. The electrical, optical, and surface morphological properties of these films were examined as a function of substrate temperature and oxygen pressure. ITO thin films, deposited by PLD on a PES substrate at room temperature and an oxygen pressure of 15 mTorr, have a low electrical resistivity of 2.9×10^?4 Ω cm and a high optical transmittance of 84 % in the visible range. They were used as the anode in organic light‐emitting diodes (OLEDs). The maximum electro luminescence (EL) and current density at 100 cd/m² were 2500 cd/m² and 2 mA/cm², respectively, and the external quantum efficiency of the OLEDs was found to be 2.0 %.     

Influence of annealing temperature on nanostructured thin films of tungsten trioxide

Tungsten trioxide thin films of ~300 nm thickness have been deposited on indium tin oxide coated glass and silicon substrates by thermal evaporation technique. Influence of annealing temperature on the structural, vibrational, morphological, optical and gas sensing properties of these films has been extensively studied to search out the possible applications in opto-electronic and gas sensing devices. From the studies of optical transmittance spectra it is observed that optical band gap decreases from 3.24 to 2.72 eV with increase in annealing temperature. It is also observed that because of annealing the photoluminescence yield of the films increases. All films, especially the annealed films have shown reasonably good gas sensing behavior in acetylene environment. The film annealed at 500 °C shows better optical as well as gas sensing behaviors and hence can have good device applications.     

Nanostructured ITO/SiO2 Coatings

Semiconductors - The influence of a SiO2 layer deposited onto nanostructured transparent conductive films of indium and tin oxide (ITO) on their optical characteristics is investigated. For this...     

ZnSe/ITO thin films:candidate for CdTe solar cell window layer

The crystal structure, electrical and optical properties of ZnSe thin films deposited on an In₂O₃:Sn (ITO) substrate are evaluated for their suitability as the window layer of CdTe thin film solar cells. ZnSe thin films of 80, 90, and 100 nm thickness were deposited by a physical vapor deposition method on Indium tin oxide coated glass substrates. The lattice parameters are increased to 5.834 Å when the film thickness was 100 nm, which is close to that of CdS. The crystallite size is decreased with the increase of film thickness. The optical transmission analysis shows that the energy gap for the sample with the highest thickness has also increased and is very close to 2.7 eV. The photo decay is also studied as a function of ZnSe film thickness.     

ITO薄膜制备及RTA处理对发光器件特性的影响

采用射频反应磁控溅射生长铟锡氧化物(ITO)薄膜,通过X射线衍射(XRD)、透射光谱、四探针法及原子力显微镜(AFM)研究了生长条件、快速热退火(RTA)温度等对薄膜的晶化、透过率、电导率以及表面形貌的影响.以ITO/NPB/AlQ/Al结构的器件为例,讨论了不同的制备条件下ITO薄膜的表面效应对电致发光(EL)的影响,通过EL光谱表征发现,对ITO退火处理后,器件的相对发光强度明显增加,衰减速度减慢,器件的EL光谱有明显的变化.通过进一步分析认为,这是由于ITO薄膜表面的变化引起功函数的改变,从而引起电场重新分布造成的.     

WZO薄膜生长及氧流量对其特性的影响

采用直流脉冲反应磁控溅射方法生长W掺杂ZnO(ZnO:W,即WZO)透明导电氧化物(TCO)薄膜并研究了氧气流量对薄膜微观结构、组分、表面形貌以及光电性能的影响。实验结果表明,WZO薄膜具有良好的(002)晶面择优取向生长,且适当的氧气流量是制备优质WZO薄膜的关键因素。WZO薄膜表面形貌受薄膜结晶质量的影响。当氧气流量为2.08×10-7 m3/s时,WZO薄膜在400～1 500nm透过率达到84.5%,电阻率为4.61×10-3Ω.cm,迁移率为20.5cm2v-1s-1。XPS测试表明WZO薄膜中Zn和W均处于氧化态,其中W元素呈现W6+价态。