加强军队医药卫生科技查新工作

采用固相反应法研究了ZnO-B2O3(ZB)玻璃对Ca[(Li1/3Nb2/3)0.9Ti0.1]O3-δ(CLNT)烧结性能和微波介电性能的影响.X-射线衍射图谱表明,ZB玻璃含量的增加有利于正交钙钛矿相的稳定形成,w(ZB)＞3%时,第二相开始形成;随ZB玻璃添加量的增加,CLNT陶瓷的烧结温度可降低到940℃,Q×f和介电常数εr均先增大后减小,频率温度系数τf负向增大.掺入w(ZB)=3%,在940℃烧结4 h,CLNT陶瓷获得如下微波介电性能:Q×f=13 705 GHz,εr=23.7,τf=-59×10-6/℃.     

CaWO_4-Li_2WO_4陶瓷低温烧结特性及微波性能研究

采用固相反应法制备了(1-x)CaWO4-xLi2WO4(0≤x≤0.14)微波陶瓷,研究了Li2WO4作为第二相对CaWO4微波陶瓷的低温烧结特性和微波性能的影响。结果表明,Li2WO4相的存在能明显降低CaWO4的烧结温度,并且随着x的增加,(1-x)CaWO4-xLi2WO4(0≤x≤0.14)陶瓷体系的最佳烧结温度降低。当x=0.1,在900℃下烧结2h,该陶瓷材料的介电常数εr=9.002,品质因数与频率之积Q×f=11.76×104 GHz,谐振频率温度系数τf=-55×10-6/℃。在此基础上采用w(CaTiO3)=5.0%调节其谐振频率温度系数到0,调节后的微波介电性能为εr=10.312,Q×f=5.36×104 GHz,τf约为0     

CTLA陶瓷微波介电性能及烧结特性研究

采用固相反应法制备了0.65CaTiO3-0.35LaAlO3(CTLA)陶瓷,研究了CTLA陶瓷的物相组成、烧结特性及微波介电特性。结果表明,CTLA陶瓷只含有Ca0.65La0.35Al0.35Ti0.65O3主晶相,不存在第二相。烧结温度在1 380～1 450℃间,陶瓷的微波介电性能最佳,介电常数εr=44.5,频率温度系数τf≈0,品质因数与频率之积Q×f≈43 948GHz。当w(Nb2O5)=10%时能使陶瓷致密化烧结温度降到1 300℃,但微波性能变差,εr=38.3,τf=-2.8×10-6/℃,Q×f=13 260GHz。     

高介电(1–x)Ca_(0.7)Nd_(0.2)TiO_(3-x)Ba_(0.4)Sr_(0.6)TiO_3陶瓷微波介电特性

采用固相反应法制备了具有钙钛矿结构的(1–x)Ca_(0.7)Nd_(0.2)TiO_(3-x)Ba_(0.4)Sr_(0.6)TiO_3(0.05≤x≤0.5)陶瓷,并对其烧结行为、相组成、显微结构及微波介电性能进行了研究。结果表明:随着(Ba0.4Sr0.6)2+含量的增加,(1–x)Ca_(0.7)Nd_(0.2)TiO_(3-x)Ba_(0.4)Sr_(0.6)TiO_3(0.05≤x≤0.5)陶瓷的品质因数(Q·f)及谐振频率温度系数(τf)单调递减,而相对介电常数(εr)先升后小幅降低。当x=0.2,且烧结温度为1 450℃时,该介质陶瓷的微波介电性能为:εr=151.3,Q·f=5 900 GHz,τf=399.4×10–6/℃。与CaTiO_3(εr=160,Q·f=6 800 GHz,τf=850×10–6/℃)相比,Q·f和εr略微降低,τf有较大程度的减少,故此陶瓷体系有望替代CaTiO_3成为新一类高介电性微波陶瓷。     

(Sr_(1-x)Ba_x)La_4Ti_4O_(15)微波介质陶瓷的显微结构及介电性能

采用传统的固相反应法制备(Sr1-xBax)La4Ti4O15(x=0~1,BSLT)微波介质陶瓷,并对其物相组成、晶体结构及微波介电性能进行分析。研究结果表明,Ba2+含量的增加降低了BSLT陶瓷的烧结温度,陶瓷的主晶相为(Sr,Ba)La4Ti4O15,并伴随有第二相La2TiO5的生成。在微波频率下,随Ba2+含量的增加,BSLT陶瓷的微波介电常数εr及品质因数与频率之积Q×f值先增大后减小,谐振频率温度系数τf为(-4~-11)×10-6/℃,优化出(Sr0.9Ba0.1)La4Ti4O15陶瓷具有最佳微波介电性能:εr=47.5,Q×f=31 582GHz,τf=-7.5×10-6/℃。     

r(Nd)/r(Bi)对Ba0.75Sr0.25(NdxBi1-x)2Ti4O12微波陶瓷性能的影响

BaR2Ti4O12(R为稀土元素)系固溶体有很好的微波介电性能,尤其是Nd系材料有很高的介电常数(εr)和高品质因数(Q×f),该文研究了不同Nd/Bi比对Ba0.75Sr0.25(NdxBi1-x)2Ti4O12微波介质陶瓷结构性能的影响。当x=0.75时,即摩尔比x∶(1-x)=3∶1时(缩写为B13)有很好的介电性能:εr=118.5,Q×f=4 607(f=2.8GHz),谐振频率温度系数τf=-1.3×10-6℃-1。对不同Nd/Bi比的样品在1 250℃到1 400℃烧结3h后的陶瓷进行XRD分析后发现,陶瓷主相为BaNd2Ti4O12,有少量第二相Ba2Ti9O20。对Bi含量逐渐增加的陶瓷样品进行微观分析可知,Bi有助于致密度的提高和晶粒的增长,随着Nd/Bi比的减小,εr慢慢增大,τf渐渐趋向于0并向负方向移动,但同时降低了Q×f值。     

助剂对ZnO-SiO2陶瓷烧结和性能的影响

研究了Bi2O3-SiO2烧结助剂预合成对ZnO-0.6SiO2陶瓷烧结和微波介电性能的影响。750℃预烧后的Bi2O3-SiO2烧结助剂能形成液相,有效地将ZnO-0.6SiO2陶瓷的烧结温度从1 380℃降至990℃。随助剂添加量的增加,ZnO-0.6SiO2陶瓷的介电常数(rε)略有提高,品质因数(Q×f)随之下降,频率温度系数(τf)无明显变化。添加3%~10%(质量分数)预合成的Bi2O3-SiO2助剂后,ZnO-0.6SiO2陶瓷在990℃保温2 h,获得微波介电性能为:rε=6.19~6.59,Q×f=37 500~41 800 GHz(测试频率f=11 GHz),τf=(-52.9~-50.1)×10-6/℃。     

Zn_(0.7)Co_(0.3)(Ti_(1-x)Sn_x)Nb_2O_8陶瓷微波介电性能研究

采用传统固相法制备Zn0.7Co0.3(Ti1-xSnx)Nb2O8(x=0.1,0.15,0.2,0.25,0.3,0.35)微波陶瓷。研究了Sn取代Ti对Zn0.7Co0.3(Ti1-xSnx)Nb2O8微波介质陶瓷的物相结构与介电性能的影响。XRD研究表明,Zn0.7Co0.3(Ti1-xSnx)Nb2O8陶瓷主晶相为ZnTiNb2O8,有极少杂相Zn0.17Ti0.5Nb0.33O2存在;随着Sn含量的增加,陶瓷晶格常数增大,晶胞体积变大,陶瓷密度增大;电子扫描显微镜(SEM)显示随着Sn含量增加陶瓷结构致密;相对介电常数εr逐渐变小,温度系数τf逐渐变小,Q×f值逐渐增大;当Sn含量为0.35时,烧结温度为1 080℃,εr=30.5,Q×f=46 973GHz,τf=-45.4×10-6/℃。     

掺杂BiVO4低温烧结ZMT微波陶瓷的研究

研究了烧结助剂BiVO4对(Zn0.65Mg0.35)TiO3(ZMT)陶瓷结构及介电性能的影响。研究结果表明,添加BiVO4可促进晶粒生长,使ZMT材料在较低温度下烧结成瓷,且获得较好的微波介电性能;但添加量不宜过大,过量后烧结过程中形成的液相过多,不能均匀的分散在晶界处,不利于晶粒的充分生长;最佳的BiVO4的质量分数为1.0%,添加后材料可在930℃烧结,相对介电常数rε=20.87,品质因数与频率之积(Q×f)为26 700 GHz(在频率f为15 GHz下测试的数据),谐振器频率温度系数(τf)约为64×10-6/℃,有望实现与银电极共烧。     

(1-x)LaAlO_3-xSrTiO_3陶瓷结构及介电性能研究

采用固相法制备了钙钛矿型(1-x)LaAlO_3-xSrTiO_3介质陶瓷,研究了其烧结特性、显微结构和介电性能。结果表明,随SrTiO_3含量增加,陶瓷主晶相由三方相变化为正交相,再到立方相;相对介电常数εr、谐振频率温度系数τf随SrTiO_3含量增加而增加,介电损耗tanδ与陶瓷相结构转变有关。当x=0.46,且在1 550℃烧结4h,试样晶粒发育良好,结构致密,晶界清晰,可得介电性能εr=35.7,tanδ=3.01×10~(-4),τf=-14.6×10~(-6)/℃。     

Application of model of mixture of probabilistic distributions for definition of the signals of radiophysical probing

The article describes a model representation of radar probing data in form of a mixture of background and target samples, which is the sum of two random variables with very different parameters. For model development we research the behavior of the central moments of the distribution mix without assuming the distribution law form. An example it is described the detection of the signal at the output of compression system of chirp ionosonde.     

浅析IP网服务质量(QoS)

解决IP网QoS问题是目前通信领域的研究热点之一.虽然研究已经取得了一定的进展,但人们对于IP 网QoS本身的含义及相关的问题还有着不同的理解.本文将从IP网QoS的定义入手讨论相关的一些问题以及解决IP网QoS问题所做的各种努力.     

部分偏振光的表示方法

随着光纤通信和光纤传感的快速发展,人们时光的偏振态提出了越来越高的要求.光是一种横波,其偏振态大致分为:完全偏振光、部分偏振光和自然光.文中介绍了完全偏振光的几种表示方法,给出了几种部分偏振光的描述方法.并阐述了它们之间的差异与联系.     

Interpretation of responses of visual cells of limulus

Assuming that visual responses are due to the action of particles on the membrane of the visual cells, the stochastic variability of the response should be a function of the number of particles producing it. Quantitative predictions can be made with the aid of a model proposed in previous articles. It is found that responses produced in visual cells of Limulus by absorption of a single photon have the stochastic properties which would be expected if the response to one photon were brought about by 25 particles. It is concluded from this that the processes leading to visual responses produce multiplication of particles. The effects of temperature and of metabolic poisons suggest that these processes are of chemical nature.     

NTRUsign式计算量分析

介绍了NTRUsign签名算法的密钥生成过程,其在实现的过程中需要进行上百位的大数运算问题,这些数字远远超出了普通电脑存贮范围。而要进行大数运算,就得用数组存贮,进行模拟运算,这就大大增加了运算量。文中分析了这个算法实现过程中的运算量,分析结果说明NTRUsign的运算量过大,以致实际并非一个实用算法。     

电子行业标准制修订项目计划管理信息化的实现

论述了推进电子行业标准制修订项目计划管理信息化的必要性.并提出了具体措施;详细介绍了电子行业标准制修订项目计划管理数据库的设计思路和实现方法.阐述了对后续工作的几点思考.     

影响镀镍层内应力的因素及排除方法

对影响镍镀层内应力的因素做了介绍和分析,提出了对收缩应力的一种解释,提供了排除这些因素影响的方法,指出重视镀液的管理是减少各种影响内应力因素的主要办法。     

Definition of function of squares amount of angular part of film element

By means of exact conformal mapping method we have defined character of dependence of squares amounts of angular part of film element on angled part dimension. We propose relations, approximating obtained dependence. Calculation results and experimental researches of large-scale models are represented.     

Temperature dependence of index of refraction of polymericwaveguides

The temperature dependence of refractive index of polymer films was determined for a number of slab waveguides by a grating coupling method. This dependence was examined as a function of parameters such as molecular weight and glass transition temperature of the polymer. Temperature-induced changes in N_TE-N_TM , N being the effective index, were studied systematically for different slab waveguide compositions. It is shown that with proper device design and choice of polymeric materials, thermal effects can be reduced     

Differential method of analysis of luminescence spectra of semiconductors

A method for analyzing the luminescence spectra of semiconductors is suggested. The method is based on differentiation of the spectra. The potentialities of the method are demonstrated for luminescence in the region of the fundamental absorption edge of Si and SiGe alloy single crystals. The method is superior in accuracy to previously known luminescence methods of determining the band gap of indirect-gap semiconductors and practically insensitive to different conditions of outputting radiation from the sample.