Optimization of Spin-Valve Structure NiFe/Cu/NiFe/IrMn for Planar Hall Effect Based Biochips

This paper deals with the planar Hall effect (PHE) of Ta(5)/NiFe$(t_{rm F})$/Cu(1.2)/NiFe$(t_{rm P})$/IrMn(15)/Ta(5) (nm) spin-valve structures. Experimental investigations are performed for 50 $mu$m$times hbox{50} mu$m junctions with various thicknesses of free layer ( $t_{rm F} = 4, 8, 10, 12, 16, 26$ nm) and pinned layer ($t_{rm P} = 1, 2, 6, 8, 9, 12$ nm). The results show that the thicker free layers, the higher PHE signal is observed. In addition, the thicker pinned layers lower PHE signal. The highest PHE sensitivity $S$ of 196 $mu$V/(kA/m) is obtained in the spin-valve configuration with $t_{rm F} = 26$ nm and $t_{bf P} = 1$ nm. The results are discussed in terms of the spin twist as well as to the coherent rotation of the magnetization in the individual ferromagnetic layers. This optimization is rather promising for the spintronic biochip developments.      

Thermal Diffusivity and Related Properties of Colossal Magnetoresistive La$_{0.67}$Ca$_{0.33}$MnO $_{3}$ With Various Grain Sizes

Using the open-cell photoacoustic technique, we have measured the room-temperature thermal diffusivities of the colossal magnetoresistive material La$_{0.67}$Ca$_{0.33}$MnO$_{3 }$, sintered between 1100$;^{circ}$ C and 1350$;^{circ}$ C, with average grain sizes 1, 3, 5, and 10 $mu$m. We obtained the thermal diffusivities by analyzing the phase of photoacoustic signals in thermally thick samples using Calderon's method. We found that the insulator-metal transition temperature does not depend on the grain size ($T_{rm IM} sim 272$ K). However, the thermal diffusivity increases with grain size, with values between 0.431 and 0.969 mm $^{2}$s $^{-1}$. Other related electrical and thermal properties, including the electrical conductivity, thermal conductivity, and phonon mean free path, are also dependent on the grain size. The electronic contribution to the thermal conductivity is 2%–3% of the total thermal conductivity for smaller grain sizes (1–5 $mu$m) and increases to about 24% when the grain size is increased to 10 $mu$ m.      

Sensitivity Dependence of the Planar Hall Effect Sensor on the Free Layer of the Spin-Valve Structure

Planar Hall effect (PHE) sensors with the junction size of 50 $mu$m $,times,$50 $mu$m were fabricated successfully by using spin-valve thin films Ta(5)/NiFe$(x)$ /Cu(1.2)/NiFe(2)/IrMn(15)/Ta(5) (nm) with $x = 4, 8, 10, 12, 16$. The magnetic field sensitivity of the PHE sensors increases with increasing thickness of ferromagnetic (FM) free layer. The sensitivity of about 95.5 m $Omega$/(kA/m) can be obtained when the thickness of the FM-free layer increases up to 16 nm. The enhancement of sensitivity is explained by the shunt current from other layers. The PHE profiles are well described in terms of the Stoner–Wohlfarth energy model. The detection of magnetic micro-beads label Dynabeads¯ M-280 is demonstrated and the results revealed that the sensor is feasible for high-resolution biosensor applications.      

Magnetometric Demagnetizing Factors for Various Shapes of Rotational Symmetry

We have investigated the magnetometric demagnetizing factors of rotation-symmetrical magnetic bodies of relative permeability $mu$ placed in a uniform magnetic field parallel to the axis of rotation. The bodies we considered include a cylinder, a sphere, a bicone, and a rotating astroid. We numerically calculated the magnetometric demagnetizing factors from the surface magnetic charge densities $sigma$ obtained by the surface magnetic charge simulation method. We show that the magnetometric demagnetizing factors for various shapes of rotation-symmetrical bodies are significantly different from those of a sphere. We have determined the shape producing the largest demagnetizing field in ferromagnetic bodies with sufficiently large relative permeability $mu$ . We report the magnetometric demagnetizing factors for uniformly magnetized bodies ($mu=1$ , i.e., susceptibility $chi=0$ ) of various shapes.      

CMRR in Voltage-Op-Amp-Based Current-Mode Instrumentation Amplifiers (CMIA)

The common-mode rejection ratio (CMRR) of a power-supply current-sensing current-mode instrumentation amplifier (CMIA) has theoretically been analyzed and formulated. The theory was further investigated by doing experiments using $mu$ A741 and TL071 as op-amps and CA3096 transistors as the current mirrors of the CMIA. Both theoretical and practical investigations proved that both the dc and ac performances of CMRR depend on the matching status of parameters such as $hbox{CMRR}$, open-loop gain $A$, gain-bandwidth product $hbox{GB}$, and the output resistance $R_{O}$ of the input op-amps of the CMIA. It has also been shown that, in the CMIA, unlike the voltage-mode instrumentation amplifier, voltage gain is independent of the bandwidth.      

Measurements of the Complex Transmission/Reflection Coefficient of a Material Using Mixed-Type Common-Path Heterodyne Interferometery

The dielectric constant, magnetic permeability, and refractive index are the fundamental optical parameters of a material. To investigate these optical parameters, a mixed-type common-path heterodyne interferometer is developed in this paper. By using this interferometer to detect the amplitudes and phases of both the transmission and reflection coefficients, the complex dielectric constant, magnetic permeability, and refractive index can be obtained using the algorithm discussed here. The validity of the mixed-type common-path heterodyne interferometer is demonstrated for visible lights, such as red, green, and blue, using lasers as light sources. Furthermore, the specifications for characterizing the optical properties of samples using the mixed-type common-path heterodyne interferometer are investigated. For example, dielectric constant $varepsilon$ , magnetic permeability $mu$, and the refractive index $n$ of $2.161 + i0.002$ , $0.9997 - i0.0009$, and $1.4699 - i3.4 times 10^{-7}$ with low uncertainties of $0.003 + i0.002$, $0.0003 + i0.0009$, and $0.0007 + i8 times 10^{-8}$, respectively, for a fused quartz measuring 632.8 nm are investigated. It also demonstrated that, in the case of the investigation in visible ranges, the measurement procedure is performed by only the common-path transmission type heterodyne interferometer.      

A CMOS Image Sensor With In-Pixel ADC, Timestamp, and Sparse Readout

Recent developments in CMOS image sensors have focused on the advancement of digital pixel sensors (DPS). A novel DPS aiming to combine multiple functionalities on the imaging plane has been designed and tested: The on pixel intelligent CMOS (OPIC) sensor was manufactured in a 0.25 $mu$m logic process with 5 metal layers, and 8 $mu$m epitaxial layers. The sensor comprises three 2 $,times,$2 mm test arrays of 30 $mu$m pixels. Two of the test arrays are named “advanced” and include two 8-bit DRAM cells, one 8-bit ROM cell, and one 1-bit DRAM cell per pixel. The 8-bit DRAM cells can record both ADC and “time-to-threshold” data, while the ROM hard codes the pixel address within the array. The 1-bit DRAM acts as a “hit flag” enabling automatic sparsification of the image data based on an external threshold.      

Smooth Contact Capacitive Pressure Sensors in Touch- and Peeling-Mode Operation

Capacitive (C) pressure sensors typically sense quadratic changes in $C$ as a pressure difference $(P)$ deflects a flexible conducting diaphragm near a rigid ground plane. Touch-mode capacitive pressure (C-P) sensors, where the conducting diaphragm touches a dielectric coated ground plane, often show a more linear response, but with less sensitivity, particularly at low-$P$ . Initial contact of the diaphragm often occurs at a critical $P$. Until $P_{rm crit}$ is reached, the sensitivity is typically too low for accurate measurements. In this work, two different types of electrodes with “parabolic” and “donut” cavity-shapes have been designed, fabricated, and tested to achieve high-sensitivity at low-pressures. A flexible conducting diaphragm touches the bottom electrode smoothly, and both cavity shapes permit initial contact at a zero-pressure differential. This type of C-P sensors can have touch-mode and peeling-mode operations. The sensitivities of these sensors in two operation modes were measured, and their resolutions were smaller than 0.1 Pa at a mean pressure of ${10} ^{5}~{rm Pa}$. Both sensors in two modes have the resolution over total-pressure less than ${10} ^{-6}$, which is difficult to achieve at atmospheric pressure.      

Effects of Post-Deposition Annealing and Oxygen Content on the Structural and pH-Sensitive Properties of Thin Nd $_{2}$O $_{3}$ Films

This paper describes the structural properties and sensing characteristics of thin Nd$_{2}$O$_{3}$ sensing membranes deposited on silicon substrates by means of reactive sputtering. X-ray diffraction, X-ray photoelectron spectroscopy, and atomic-force microscopy were used to study the chemical and morphological features of these films as functions of the growth conditions (argon-to-oxygen flow ratios of $20/5, 15/10$ and $10/15$; temperatures ranging from 600$~^{circ}$C to 800$~^{circ}$C). The thin Nd$_{2}$O$_{3}$ electrolyte-insulator-semiconductor devices prepared under a 15/10 flow ratio with subsequent annealing at 700$~^{circ}$C exhibited a higher sensitivity (56.01 mV/pH, in the solutions from pH 2 to 12), a smaller hysteresis voltage (4.7 mV in the pH loop $7 to 4 to 7to 10 to 7$), and a lower drift rate (0.41 mV/h in the pH 7 buffer solution) than did those prepared at the other conditions. We attribute this behavior to the optimal oxygen content in this oxide film forming a high density of binding sites and a small surface roughness.      

Comparison of Alternative Techniques for Characterizing Magnetostriction and Inverse Magnetostriction in Magnetic Thin Films

We compare the direct and inverse techniques of measuring magnetostriction in magnetic thin films. We chose a set of four magnetic thin film samples (Co$_{95}$Fe$_5$, Co$_{60}$Fe$_{20}$B$_{20}$, Ni$_{65}$Fe$_{15}$Co$_{20}$, and Ni$_{80}$Fe$_{20}$) for the measurements, representing positive and negative magnetostriction and having saturation magnetostriction of magnitudes ranging from $10^{-7}$ to $10^{-5}$. We made the direct measurements on a high-precision optical cantilever beam system, and we carried out the inverse magnetostriction measurements on a nondestructive inductive $Bhbox{-}H$ looper with three-point bending stage.      

Novel Carbon Dioxide Microsensor Based on Tin Oxide Nanomaterial Doped With Copper Oxide

Carbon dioxide $({rm CO}_{2})$ is one of the major indicators of fire and therefore its measurement is very important for low-false-alarm fire detection and emissions monitoring. However, only a limited number of ${rm CO}_{2}$ sensing materials exist due to the high chemical stability of ${rm CO}_{2}$. In this work, a novel ${rm CO}_{2}$ microsensor based on nanocrystalline tin oxide $({rm SnO}_{2})$ doped with copper oxide (CuO) has been successfully demonstrated. The ${rm CuO}hbox{-}{rm SnO}_{2}$ based ${rm CO}_{2}$ microsensors are fabricated by means of microelectromechanical systems technology and sol-gel nanomaterial-synthesis processes. At a doping level of ${rm CuO}:{rm SnO}_{2} =1:8$ (molar ratio), the resistance of the sensor has a linear response to ${rm CO}_{2}$ concentrations for the range of 1% to 4% ${rm CO}_{2}$ in air at 450$^{circ}{rm C}$. This approach has demonstrated the use of ${rm SnO}_{2}$, typically used for the detection of reducing gases, in the detection of an oxidizing gas.      

SiGe/Si Quantum-Dot Infrared Photodetectors With ${bm delta}$ Doping

The multicolor absorption of MOS SiGe/Si quantum-dot (QD) infrared photodetectors is demonstrated using the boron $delta$-doping in Si spacers. The energy-dispersive X-ray spectroscopy shows that the Ge concentration in the wetting layers is much smaller than that in QDs. Most holes stay at the ground state in QDs instead of wetting layers. The energy band structure in QDs is calculated to understand the absorption spectrum. The absorption at 3.7–6 $mu$m is due to the intersubband transition in the SiGe QDs. The other absorption at 6–16 $mu$ m mainly comes from the intraband transition in the boron $delta$ -doping wells. Since the broadband spectrum covers most of the atmospheric transmission windows for infrared, the broadband detection is feasible using this device.      

Development of a High-k Pr $_{2}$O $_{3}$ Sensing Membrane for pH-ISFET Application

In order to develop a pH sensor having a good pH-sensing characteristic, electrolyte-insulator-semiconductor capacitors using a high-k Pr$_{2}$O$_{3}$ thin film as the sensing membrane were fabricated on silicon substrates by reactive radio frequency sputtering. The structural and morphological features of these films with annealing at various temperatures were studied by X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy. The Pr$_{2}$O $_{3}$ sensing film after annealing at 900$;^{circ}$C is suggested to the increase in the interfacial SiO $_{2}$ and silicate formation, and the high surface roughness. Therefore, a physical vapor deposition Pr$_{2}$O $_{3}$ film is adopted as a new pH-sensing layer. The result produces a pH response of 52.9 mV/pH $({rm pH}=2hbox{--}12)$, a hysteresis voltage of 17.5 mV $({rm pH}=7 to 4 to 7to 10 to 7)$, and a drift rate of 2.15 mV/h (${rm pH}=7$ buffer solution).      

Fully Packaged Nonenzymatic Glucose Microsensors With Nanoporous Platinum Electrodes for Anti-Fouling

CMOS integrable nonenzymatic glucose microsensors with nanoporous platinum (Pt) working and counter electrode (WE/CE) were first fabricated, packaged, and characterized with biocompatible Nafion and hydrophilic polyurethane (HPU) membrane materials. Optimal packaging material and its processing condition for these nonenzymatic sensors were investigated. The optimally packaged glucose microsensor was evaluated in human blood plasma solution for checking its biocompatibility and commercial applicability. The fabricated microsensors with nanoporous Pt WE/CE had a sensitivity of 7.75 $mu$A mM $^{-1}$ cm $^{- 2}$. The packaged microsensor with Nafion membrane had better performance characteristics than packaged one with HPU. The packaged microsensor with 1:6 ratio of Nafion to ethanol exhibited a sensitivity of 0.83 $mu$ A mM$^{- 1}$ cm$^{-2}$ and stable current change in the human blood plasma solution, while the current response of nonpackaged microsensor was rapidly saturated because adsorption of various proteins and cells as expected. These data indicate that the packaged nonenzymatic microsensor with biocompatible Nafion membrane is promising and strongly applicable for in vitro and in vivo glucose monitoring systems.      

Single CFA-Based Integrator, Differentiator, Filter, and Sinusoid Oscillator

A new multifunction configuration using a single current feedback amplifier (CFA) and a few $RC$ components is presented. The analysis for the various signal processing function realizability had been carried out by utilizing the internal parasitic and transimpedance elements of the CFA (AD-844 or 846) device. The circuit implements the functions of integrator/differentiator, high-selectivity $(Q geq 20)$ filters, and sinusoid oscillator $(Q rightarrow infty)$ on the same topology with the appropriate design. Adjustment of the time constant $(T)$, filter quality $(Q)$, and oscillation frequency $(omega_{o})$ may be obtained with single-component variation at extended frequency ranges (1–30 MHz). All of the proposed functional performances had satisfactorily been verified with PSPICE macromodel simulation and by hardware circuit implementation.      

Development of a New Selective Optical Sensor for Cd(II) Ions Based on 4-Hydroxy Salophen

A new sensor membrane based on immobilization of 4-hydroxy salophen on triacetyl cellulose has been developed for the determination of Cd(II) ions that displays excellent performance. The sensing membrane is capable of spectrophotometric determining of Cd(II) with an outstanding high selectivity over a dynamic range between 1.0$,times 10^{-6}$ and 5.0$,times 10^{-2}$ mol L$^{-1}$ with a limit of detection of 5.3 $,times 10^{-7}~$mol L $^{-1}$ (0.06 $mu$g mL $^{-1}$ The sensor shows a fast response time ($≪ {5}~$ min) and the membrane can be used for more than two months without observing any major deviation. The optode revealed very good selectivity with respect to many cations including alkali, alkaline earth, transition and heavy metal ions. The proposed sensor could be used to determine cadmium ions in water and waste water samples. Different experimental parameters such as variable affecting on sensor preparation and pH of the sample solution plus response time were studied. The optodes developed in the present work were found to be stable, cost effective, easy to prepare, and efficient for direct determination of Cd(II) in a variety of aqueous samples using spectrophotometry, with satisfactory results.      

Effect of Factors on Coercivity in Sr–La–Co Sintered Ferrite Magnets

We varied the composition and sintering temperature of Sr–La–Co ferrite magnets to analyze the effects of various important factors on coercivity $(H_{rm cJ})$. We examined the effects of crystal grain size and distribution, the mechanism of magnetization reversal, the degree of crystal grain orientation (OD), and the anisotropy field $(H_{rm A})$ on $H_{rm cJ}$. We proposed an equation based on the experimental results that expresses the measured $H_{rm cJ}$ and considers these effects as $H_{rm cJ} = C_{rm t}(0.4/R_{rm h})$ OD $(H_{rm A} - H_{rm d} - H_{rm in})$, where $C_{rm t}, R_{rm h}, H_{rm d}$, and $H_{rm in}$ are the crystal grain size effects on $H_{rm cJ}$ of sintered magnet, rotational hysteresis integral corresponding to the mechanism of magnetization reversal, demagnetizing field of shape anisotropy, and interaction field between crystal grains, respectively. We found that apart from the volume ratio for single-domain crystal grains and $H_{rm A}$, the mechanism of magnetization reversal had significant effects on $H_{rm cJ}$ for Sr–La–Co sintered ferrite magnets.      

On-Chip Voltage Reference-Based Time-to-Digital Converter for Pulsed Time-of-Flight Laser Radar Measurements

A fully integrated time-to-digital converter (TDC) for a pulsed time-of-flight laser rangefinder has been designed and fabricated by a standard 0.18-$muhbox{m}$ CMOS process. The time-to-digital conversion is realized by counting the full clock cycles of an on-chip ring oscillator between timing signals and by recording the state of its 12 phases at the moment of arrival of the timing signals and their delayed replicas. The frequency of the oscillator is stabilized to an on-chip voltage reference by means of a frequency-to-voltage-converter-based feedback loop. The resolution and single-shot precision (standard deviation) of the TDC are $sim$60 ps and less than $sim$50 ps, respectively, in a range of 80 ns. The worst-case temperature dependence of the TDC is less than 50 $hbox{ppm}/^{circ}hbox{C}$ in the temperature range of 0 $^{circ}hbox{C}$ to 70 $^{circ}hbox{C}$, corresponding to 0.6 $hbox{mm}/^{circ}hbox{C}$ at a distance of 12 m (80 ns). The power consumption of the TDC is less than 18 mW.      

CMOS Microelectrode Array for Electrochemical Lab-on-a-Chip Applications

Microelectrode arrays (MEAs) offer numerous benefits over macroelectrodes due to their smaller sample size requirement, small form factor, low-power consumption, and higher sensitivity due to increased rates of mass transport. These features make MEAs well suited for microfluidic lab-on-a-chip applications. This paper presents two implementations of MEAs with and without an on chip potentiostat. We first describe an 8$,times,$ 8 array of 6 $mu{rm m}$ circular microelectrodes with center to center 37 $mu{rm m}$ spacing fabricated on silicon using conventional microfabrication techniques. Pads are provided for external connections to a potentiostat for electrochemical analysis. The second implementation is an individually addressable 32$,times,$32 array of 7 $mu{rm m}$ square microelectrodes with 37 $mu{rm m}$ center to center spacing on a CMOS chip with built-in very-large-scale integration potentiostat for electrochemical analysis. The integrated CMOS MEA is post processed at the die level to coat the exposed Al layers with Au. To verify microelectrode array behavior with individual addressability, cyclic voltammetry was performed using a potassium ferricyanide $({rm K} _{3}{rm Fe}({rm CN})_{6})$) solution.      

Modeling and Simulation of a Single Tin Dioxide Nanobelt FET for Chemical Sensors

This paper presents the modeling and simulation of a tin dioxide (${rm SnO}_{2}$) field-effect transistor (FET)-based nanobelt gas sensor. The model results are compared to numerical simulations and experimental data obtained from published results describing the fabrication of single crystal nanobelts grown through thermal evaporation techniques. The fabricated sensor shows good response when exposed to oxygen (${rm O} _{2}$) and hydrogen (${rm H} _{2}$) at room temperature. Gas adsorption causes changes in the electrical contacts due to oxygen vacancies in the bulk. As a result, the ${rm I}$ -${rm V}$ characteristics are very different when the device is exposed to (${rm O} _{2}$) versus (${rm H} _{2}$ ). In the presence of ${rm H} _{2}$, the behavior of the contacts is ohmic and saturation is caused by pinch-off of the channel at the drain contact. However, in the presence of ${rm O} _{2}$ , the behavior of the contacts is Schottky, and device saturation occurs at the source end of the device. Our model is based on a depletion mode MOSFET and it accounts for both ohmic and Schottky contacts when the device is exposed to oxygen or hydrogen. It also provides a possible explanation for the gate bias dependence of the saturation current seen in some published characterization data.