基波注入锁定谐波耿氏振荡器研究

本文基于同步振荡器的非线性模型，导出了基波注入锁定二次谐波耿氏振荡器的锁定带宽表达式，完成了三毫米波段第二次谐波振荡器的基波注入锁定实验，理论分析与实验结果吻合。     

GaAs FET大信号模型与参数提取

提出适用于功率ＧａＡｓＦＥＴ的新的大信号模型以及脉冲Ｉ－Ｖ和小信号Ｓ参数相结合的整体化参数提取方法。用研制出的大信号建模软件提取了功率ＦＥＴ的大信号模型参数，并用该模型模拟和测量了器件大信号Ｓ参数，结果完全一致。     

介质谐振器稳频FET振荡器的分析与设计

本文采用具有高Ｑ值高介电常数的陶瓷介质谐振器，对ＦＥＴ振荡器进行稳频、通过理论分析，导出了振荡条件，利用计算机优化，得出了各部分优化尺寸，最后研制出了Ｓ波段ＦＥＴ介质谐振器稳频振荡器。经测试，输出功率Ｐ０〉１０ｍＷ、频率稳定度△ｆ／ｆ〈１０＾－５。     

C波段介质谐振器稳频FET振荡器

本文运用电磁场理论对圆柱形介质谐振器进行了分析和计算,并设计制作了C波段反馈型介质谐振器稳频FET振荡器,其工作频率f_0=7.4GHz,输出功率P≥30mW,频率稳定度为±2×10~(-5)(-10～+50℃),频率温度系数为0.67ppm/℃。     

功率FET和二极管大信号建模方法

Under a large signal drive level,a frequency domain black box model of the nonlinear scattering function is introduced into power FETs and diodes.A time domain measurement system and a calibration method based on a digital oscilloscope are designed to extract the nonlinear scattering function of semiconductor devices.The extracted models can reflect the real electrical performance of semiconductor devices and propose a new large-signal model to the design of microwave semiconductor circuits.     

大信号参数测试仪设计技术

通过计算机产生一定脉冲重复频率的窄脉冲来测试ＧａＡｓ，ＦＥＴ或ＰＨＥＭＴ的Ｉ－Ｖ特性，能大大克服了器件在直流状态下的热效应和电子陷阱效应，对器件大信号建模和器件机理分析具有重要意义，着重论述了测试仪的硬件，软件设计和实际使用效果。     

微波功率FET大信号负载牵引测试技术研究

本文介绍大信号负载牵引测试简况、负载牵引测试的目的和意义,并重点提出以调配器为核心组建负载牵引自动测试系统的技术方案,较好地解决了微波功率FET的大信号测试问题.     

微波功率FET的大信号定模

叙述了一种新的功率ＦＥ定模方法,它利用在功率谐波测量与优化计算相结合,具有简单、方便、准确的优点．给出了实际测量结果。     

微波FET混频器的分析与设计

本文讨论了微波单栅FET的等效电路模型、本振大信号分析的谐波平衡法以及RF小信号分析的多频变换矩阵法。建立了一套完整的FET混频器的分析设计方法。试验设计表明,本方法是简便而有效的。     

THE LARGE-SIGNAL DESIGN FOR FET FUNDAMENTAL AND HARMONIC OSCILLATORS

A Large-signal model for GaAs FET is derived based on its small-signal S parame-ters and DC characteristics. The harmonic balance algorithm is applied to analyze and optimizethe FET fundamental and harmonic oscillators, and the values of steady current are obtained.In the solving process, a simplified CAD approach is used to obtain the parameters of matchingnetwork when the output power is maximum. Finally, a fundamental oscillator and a harmonicoscillator of Q-band are fabricated. The measurements show that the theoretical analysis andexperimental results are in good agreement.     

谐波随机过程的四阶平稳性和四阶遍历性条件

本文分析了由随机谐波构成的复信号四阶矩的有限数据估计,得到了四阶平稳和四阶遍历的条件,给出了估计误差及其方差,以及它们大样本极限的显式表达式。最后考虑了相应于三次相位耦合的特例,说明这一情形下的方差由遍历和非遍历两部分组成。     

GaAsFET大信号模型与参数提取

提出适用于功率ＧａＡｓＦＥＴ的新的大信号模型以及脉冲Ｉ－Ｖ和小信号Ｓ参数相结合的整体化参数提取方法。用研制出的大信号建模软件提取了功率ＦＥＴ的大信号模型参数，并用该模型模拟和测量了器件大信号Ｓ参数，结果完全一致。     

有耗非线性介质中的二阶谐波和三波耦合

本文分析了均匀各向同性有耗非线性介质中的二阶谐波和三波耦合问题;在等阻尼和相位匹配的条件下导出了耦合波的解析解。     

CAD OF MILLIMETER WAVE OSCILLATORS WITH THE FDHB TECHNIQUE

In this paper the modelling, analysis and optimization of millimeter wave oscillatorsare investigated by using the a frequency-domain harmonic balance technique (FDHB), where theexternal-circuit impedances looking outside from the active device are calculated with a combinedtechnique of modes expansion, Galerkin, and collocation methods. The optimization results arein agreement with the experimental ones, which show the reliability of the presented model andoptimization.     

非线性介质表面任意阶谐波的反射和透射

本文详细分析了线性介质与非线性介质界面任意阶谐波的反射和折射定律;导出了反射波和透射波的精确表达式;对泵浦波正入射(垂直于界面入射)时,满足相位匹配的场进行了深入的讨论。     

用因子分析法建立徽波场效应管S参数的统计模型

本文提出用因子分析法建立微波场效应管S参数的统计模型,给出了建模的算法步骤和模拟结果,并与主成分分析法建立的统计模型进行了比较。从结果可以看出,用因子分析法建立的统计模型具有比较高的精度。     

Performance analysis of FET microwave devices by use of extended spectral-element time-domain method

The extended spectral-element time-domain (SETD) method is employed to analyse field effect transistor (FET) microwave devices. In order to impose the contribution of the FET microwave devices into the electromagnetic simulation, the SETD method is extended by introducing a lumped current term into the vector Helmholtz equation. The change of currents on each lumped component can be expressed by the change of voltage via corresponding models of equivalent circuit. The electric fields around the lumped component must be influenced by the change of voltage on each lumped component, and vice versa. So a global coupling about the EM–circuit can be built directly. The fully explicit solving scheme is maintained in this extended SETD method and the CPU time can be saved spontaneously. Three practical FET microwave devices are analysed in this article. The numerical results demonstrate the ability and accuracy of this method.     

谐波恢复中累量估计的强收敛问题

本文讨论有噪声污染的谐波信号累量的单一记录估计。证明了样本自相关函数的强收敛性,并得到了强收敛速度。对于四阶矩估计,给出了四阶遍历条件。在这些遍历条件下,建立了四阶矩和四阶累量样本估计的强收敛性,并得到了强收敛速度。最后给出了数值仿真结果。