离子注入线结制备技术

根据近年来的文献资料总结报道几种离子注入线结制备技术，即：大角度偏转注入、分子离子注入、双离子注入，通过介质掩膜注入，注入固体源驱入扩散再分布，等离子体浸没离子注入和反冲离子注入等。     

离子注入H13钢注入层微观结构的研究

本文利用ＴＥＭ研究了Ｓｉ，Ｔｉ离子注入Ｈ１３钢注入层微观结构。结果表明：Ｓｉ离子注入后，导致表面注入层微晶化及部分非晶化，内注入层多晶化；Ｔｉ离子注入后，表面注入层则完全非晶化，内注入层微晶化。     

（Si,N）离子注入H13钢注入层微观结构和摩擦学性能研究

本文比较了Ｓｉ，Ｎ和Ｓｉ＋Ｎ离子注入Ｈ１３钢后显微硬度和摩擦学性能的改善，结果表明Ｓｉ离子注入效果最佳。结合微观结构的ＴＥＭ研究，发现Ｓｉ离子注入后引起表面注入层部分非晶化及微晶化，内注入层多晶化。     

基于Opera-3D软件的碳化硅离子注入机光路设计与仿真

碳化硅（SiC）离子注入机是碳化硅半导体器件制造的核心装备，其光路设计与仿真是碳化硅离子注入整机研发的关键核心技术。利用Opera-3D软件研究了B+在不同注入能量下经加速、聚焦到靶室的传输包络图和束流截面形状，模拟仿真了B+通过扫描器、平行透镜后的注入均匀性，并与实际验证结果进行了对比。结果表明：现有SiC离子注入机光路在50～350 keV能量范围内具有较好的束流截面形状、离子传输效率和注入均匀性，能够满足SiC离子注入工艺需要。     

离子注入金属材料表面改性

本文着重叙述了最近以来离子注入金属材料改性新的进展。离子注入金属的研究,其研究对象品种繁多,需要高注量,且样品形状复杂,因此离子注入金属中的物理问题比半导体离子注入更加复杂。包括各种离子注入多种金属所出现的溅射腐蚀、倾斜注入、特球形状注入、离子浓度分布、注入条件与金属相变的关系以及离子注入提高耐磨损机理等诸多难题。离子注入金属材料改性研究近年来极为活跃,已发表了不少评论文章。希望这篇评论能对从事离子束材料改性工作的人员有所帮助。     

一台专用强流氧离子注入机的研制

制备SOI材料的SIMOX技术因其工艺简单、易控制、重复性好、成本低、易向商业化过渡等优点而引起了S0I材料界更为广泛的关注。SIMOX技术所需要的最关键的设备就是大束流专用氧离子注入机。专用氧离子注入机与常规离子注入机有较大的区别：注氧时间长，注入剂量大，注入过程中要求晶片保持600℃左右的高温，金属污染非常低。本文着重介绍一台专用强流氧离子注入机主要结构单元的研制方法及工艺试验结果分析。     

离子束辅助低能碳离子注入工艺原理

离子束辅助低能碳离子注入是在低能含碳离子束轰击样品表面并沉积膜层的同时采用中能离子束辅助轰击注入，它可在低温下将碳离子注入到样品表层足够的深度，其注入深度比动态离子束混合(DIM)增加1～2倍。离子束流实行交替变化，有利于保持较低的样品基体温度，且比恒束流注入的深度有明显增加。它对材料表面改性效果明显优于DIM工艺，离子注入改性后，40Cr钢表面显微硬度HV可提高一倍左右。     

氮化硼薄膜的制备和离子注入掺杂

通常人们对氮化硼薄膜的S掺杂，采用的是在氮化硼制备过程中就地掺杂的方法，文中则采用S离子注入方法. 氮化硼薄膜用射频溅射法制得. 实验结果表明，在氮化硼薄膜中注入S，可以实现氮化硼薄膜的n型掺杂；随着注入剂量的增加，氮化硼薄膜的电阻率降低. 真空退火有利于氮化硼薄膜S离子注入掺杂效果的提高. 在离子注入剂量为1E16cm-2时，在600℃的温度下退火60min后，氮化硼薄膜的电阻率为2.20E5Ω·cm，比离子注入前下降了6个数量级.     

木马式连续注入靶室

<正> 靶室是离子注入机的关键部件之一,它对于提高注入机的注入速度、注入质量以及使注入机能开展多方面的实验研究,都有一定的影响。我厂研制的T45 200—1/ZK型微控中束流离子注入机靶室是仿日本真空技术株式会社200—DF_4型离子注入机而设计的一种木马式连续注入靶室。下面就该靶室总体情况作简要介绍。     

AlGaN-GaN和GaN上的低能Si离子注入工艺

阐述GaN注入掺杂的激活退火一直受到GaN高温分解现象的制约，高温退火的目的是恢复注入造成的晶格损伤，激活注入的原子替代晶格原子。由于在注入过程中提高衬底温度已被证明可有效减少晶格损伤并有助于提高其他半导体材料的激活效率，探讨将这种方法应用于AlGaN/GaN和GaN中的Si离子注入。仿真和实验在Al0.25Ga0.75N/GaN和GaN样品结构中，进行Si离子注入，分析实验结果。     

纳米CMOS器件中超浅结离子掺杂新技术

综述了集成电路(IC)中制备纳米CMOS器件的几种超浅结离子掺杂新技术,包括等离子体浸没掺杂、投射式气体浸入激光掺杂、快速汽相掺杂和离子淋浴掺杂等新技术,并对比分析了这几种掺杂技术各自的优缺点及其应用前景.     

锑化铟红外焦平面阵列制备技术

锑化铟作为制备中波红外探测器的主流材料,其光敏芯片规模经历了单元、多元、线列到面阵的发展过程。出于市场应用需求,光敏芯片的制备技术不断更新换代。按发展先后顺序介绍了锑化铟光敏芯片PN结的制备技术,具体包括热扩散技术、离子注入技术和外延技术。目前国内成熟的光敏芯片成结技术为热扩散技术。国外主流厂家在热扩散、离子注入、外延工艺方面都已研发成熟,并投入实际生产。着重介绍了三种工艺技术的优缺点及配套的焦平面阵列结构设计。     

Ion implanted integrated optics (I3O) technology for planar lightwave circuits fabrication

The Ion Implanted Integrated Optics (I3O) technology, using titanium ion implantation in bulk silica to fabricate passive compact planar lightwave circuits (PLCs), is presented in this paper. Its advantages are described and compared with other waveguide fabrication technologies. It is demonstrated that the guided electromagnetic field can be tailored by adjusting the titanium ion dose either to fit the guided mode of standard single-mode fibers or to allow a sharp radius of curvature of bent waveguides.     

Effect of the Distribution of the Radiation Defect on the Field-Emission Properties of Silicon Crystals

The correlated regularities of the variations in the structural and phase composition and morphological and field-emission characteristics of the surface-structured р- and n-Si crystals upon stepwise highdose ion-beam carbon processing are studied. It is shown that the stepwise high-dose ion implantation of carbon atoms into the surface of silicon wafers structured using nonlithographic carbon mask coatings makes it possible to reduce field-emission thresholds and increase the densities of the maximum field-emission currents by more than two orders of magnitude relative to the values for emitter arrays fabricated using traditional microelectronic technologies. The physicochemical mechanisms responsible for modifying the surface properties of silicon structures upon carbon ion implantation are discussed.     

50-GHz self-aligned silicon bipolar transistors with ion-implantedbase profiles

Silicon bipolar transistors having cutoff frequencies from 40 to 50 GHz have been fabricated in a double -polysilicon self-aligned structure using a process which relies on ion implantation for the intrinsic base formation. The devices have nearly ideal DC characteristics, with breakdown voltages adequate for most digital applications. The results demonstrate that the performance limits of conventional implanted technologies are significantly higher than previously thought     

PIN结构自扫描光电二极管列阵

从自扫描光电二极管列阵（ＳＳＰＡ）的工作原理出发，提出采用外延、离子注入、推阱的技术，研究一种新颖的高响应度的ＰＩＮ结构的ＳＳＰＡ器件，详细的分析了工艺设计方案和实验方法，最后提供了样品的测试参数。     

Ion-implanted FET for power applications

High-energy ion implantation is coupled with the conventional planar technology to realize a silicon FET for power application. This device known as "Gridistor" is a multichannel FET with a p-type buried as gate. Boron implantation at various energies (600-900 keV) through a metallic mask are used to do a high-doped p-type gate layer, 0.8 µ thick and buried 1 µ below the surface. Since there is no implantation induced defects in the active regions of the device, low annealing temperature can be effectively used. As a consequence, the pattern sharpness is only limited by the definition of the mask. Using ion-etched gold layer as mask, 1 µ wide channels are made in a reproductible way. Few test structures have been made to check the behavior of implantation and planar technologies by measuring their capaci tances, transconductance, and I-V characteristics.     

A Microwave High-Density Plasma Source for Submicron Silicon IC Technology

A microwave high-density plasma source is applied for room-temperature deposition of thin SiO₂films, filling of submicron trenches, local planarization of the chip surface, etching of deep trenches in the insulator, and resist stripping after ion implantation. The structures obtained meet stringent demands for current technologies. Uniform processing of wafers up to 300 mm in diameter is demonstrated.     

Structural and electrical properties of furnace and rapid thermallyannealed LPCVD WSi2 films on single-crystal, polycrystalline,and amorphous silicon substrates

Alternate approaches to obtain low-resistance, low-pressure chemical vapor deposition (LPCVD) WSi₂ films for application as interconnections in silicon integrated circuit technologies were investigated. The silicide films were deposited on three different substrates and annealed in two different systems. The silicide films deposited on the doped substrates as well as films doped using ion implantation were analyzed. The silicide microstructure, electrical film conductivity, and dopant redistribution were studied as a function of the process variants. An optimum set of annealing conditions were identified that resulted in excellent silicide thin-film properties. A correlation between the material and electrical properties is provided using the experimental data     

强流金属离子注入

金属等离子体浸没注入（MEPIII）技术与金属蒸气真空弧（MEVVA）源注入技术有相同之处,也有各自不同的特点。采用两种方法进行钛离子注入硅,RBS方法分析注入层,并对两种注入技术予以比较。