Erbium-doped fiber amplifier with 54 dB gain and 3.1 dB noisefigures

It is shown that for practical pump powers (<100 mW) a combination of high gain (>33 dB) and low noise figure (3 dB) cannot simultaneously be achieved with a conventional codirectionally pumped EDFA. However, using a codirectionally pumped composite EDFA incorporating an isolator overcomes the problem, and an amplifier with 51 dB (54 dB) gain and 3.1 dB noise figure (NF) for only 45 mW (93 mW) of pump power is demonstrated     

20 dB gain thulium-doped fluorozirconate fibre amplifier operating at around 0.8 mu m

A thulium-doped fluorozirconate fibre amplifier pumped at 785 nm is described. Amplification is observed from 800 nm to 830 nm, with a small signal gain in excess of 20 dB at 806 nm.<>     

功率为16.9 dBm增益大于20 dB的InP DHBT W波段功率放大器

A two-stage MMIC power amplifier has been realized by use of a l-μm InP double heterojunction bipolar transistor(DHBT).The cascode structure,low-loss matching networks,and low-parasite cell units enhance the power gain.The optimum load impedance is determined from load-pull simulation.A coplanar waveguide transmission line is adopted for its ease of fabrication.The chip size is 1.5×1.7 mm~2 with the emitter area of 16×1μm×15μm in the output stage.Measurements show that small signal gain is more than 20 dB over 75.5-84.5 GHz and the saturated power is 16.9 dBm @ 79 GHz with gain of 15.2 dB.The high power gain makes it very suitable for medium power amplification.     

84 dB 5.2 mA digitally-controlled variable gain amplifier

A digitally-controlled topology that reduces power dissipation to half that of the conventional one while occupying smaller die area and obtaining higher linearity is presented. In the 0.13 mum CMOS process, the VGA occupies an active area of 0.46 mm² and dissipates an average current of 5.2 mA at 1.5 V. The gain-variation range is -32 to 52 dB with a gain error of less than plusmn1 dB. The IIP3, P1 dB, NF at 52 dB of gain, and 3 dB bandwidth are -37 to +13 dBm, -42 to -2 dBm, 6.2 dB and 200 MHz, respectively.     

一种带宽为3.8GHz，增益步长为0.1dB的可编程增益放大器

A broadband programmable gain amplifier（PGA） with a small gain step and low gain error has been designed in 0.13 m CMOS technology. The PGA was implemented with open-loop architecture to provide wide bandwidth. A two-stage gain control method, which consists of a resistor ladder attenuator and an active fine gain control stage, provides the small gain step. A look-up table based gain control method is introduced in the fine gain control stage to lower the gain error.The proposedPGAshows a decibel-linear variable gainfrom4 to20 dB with a gain step of 0.1 dB and a gain error less than˙0.05 dB. The 3-dB bandwidth and maximum IIP3 are 3.8 GHz and 17 dBm, respectively.     

W波段增益为25.7 dB两级cascode放大器

AW-bandtwo-stageamplifierMMIChasbeendevelopedusingafullypassivated 2 × 20 μm gate-width and 0.15 μm gate-length InP-based high electron mobility transistor （HEMT） technology. The two-stage amplifier has been realized in combination with a coplanar waveguide technique and cascode topology, thus leading to a compact chip-size of 1.85 × 0.932 mm^2 and an excellent small-signal gain of 25.7 dB at 106 GHz. Additionally, an inter-digital coupling capacitor blocks low-frequency signal, thereby enhancing the stability of the amplifier. The successful design of the two-stage amplifier MMIC indicates that InP HEMT technology has a great potential for W-band applications.     

10 GHz bandwidth 20 dB gain low-noise direct-coupled amplifier ICs using Au/WSiN GaAs MESFET

A low-noise direct-coupled amplifier IC with a bandwidth of 10 GHz was developed using a 0.4 mu m gate-length Au/WSiN GaAs MESFET technology. The amplifier achieved a high gain of 20 dB and a minimum noise figure of 3.2 dB with a power consumption of 365 mW.<>     

16 dB 80 GHz InGaP/GaAs HBT distributed amplifier

A high-gain and broadband distributed amplifier using high-performance high-reliability InGaP/GaAs HBTs is reported. A novel two-block configuration is used in gain cells in this distributed amplifier, which achieves a bandwidth of 80 GHz with a gain of 16 dB, resulting in a gain-bandwidth product of 504 GHz.     

A 50 dB variable gain amplifier using parasitic bipolar transistorsin CMOS

A variable-gain amplifier (VGA) with a gain range of 50 dB has been implemented in a standard 3 μm CMOS process using parasitic lateral and vertical bipolar transistors to form the core of the circuit. The bipolar transistors had been characterized extensively. The VGA has a bandwidth larger than 3 MHz over the whole gain range and operates on a single 5 V power supply. The active area is about 0.8×0.9 mm²     

4W、22dB小信号增益K波段砷化镓单片微波集成功率放大器

本文报道了一种基于AlGaAs/InGaAs/GaAs pHEMT工艺的4W K波段单片微波集成功率放大器。该功放采用0.15 μm功率pHEMT工艺,并在片内实现了输入、输出端口的50欧姆阻抗匹配。当直流偏置电压为5.6V、直流偏置电流为2.6A时,该功放在19~22 GHz工作频段内可以输出4W的饱和功率,并达到22dB的小信号增益、13dB的输入回波损耗、25%的功率附加效率。     

A 4 W K-band GaAs MMIC power amplifier with 22 dB gain

A 4 W K-band AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) mono-lithic microwave integrated circuit (MMIC) high power amplifier (PA) is reported. This amplifier is designed to fully match for a 50 Ω input and output impedance based on the 0.15 μm power PHEMT process. Under the condition of 5.6 V and 2.6 A DC bias, the amplifier has achieved a 22 dB small-signal gain, better than a 13 dB input return loss,and 36 dBm saturation power with 25% PAE from 19 to 22 GHz.     

A silicon-bipolar amplifier for 10 Gbit/s with 45 dB gain

A 10 Gbit/s limiting main amplifier for use in optical transmission systems was implemented in an advanced 0.4 μm silicon-bipolar technology. The device has one differential input and two differential outputs. It is mounted and bonded on a softboard carrier for all of the following measurements. The small signal differential gain is 45 dB and the bandwidth is 9 GHz. The output voltage is limited to 400 mV_pp differential at each output. The minimum input voltage for 1.10^-9 bit error ratio at a pseudo random word of length 2²³-1 was measured to be 2.25 mV _pp. The chip area is 1.8 mm×3.1 mm. The power dissipation is 400 mW at a single supply voltage of -4 V     

High gain limiting erbium-doped fibre amplifier with over 30 dB dynamic range

A limiting optical amplifier is demonstrated using three cascaded stages of erbium-doped fibre amplifiers. A constant output power of +12.9 dBm was obtained for an input power ranging from -30 to 1.5 dBm. The optical noise figure of the amplifier has been measured over the >30 dB dynamic range. Design guidelines for optical limiting amplifiers are also presented.<>     

Over 15 dB gain from a monolithically integrated optical switchwith an amplifier

An optical switch is monolithically integrated with a semiconductor optical amplifier on a InP substrate. The switch is of the total internal reflection type. The device has achieved 15-dB chip gain at 1530-nm wavelength and fiber-to-fiber lossless transmission over a wavelength range of 80 nm. Crosstalk attenuation varies from 13 to 6 dB. This device demonstrates the feasibility of lossless integrated optics on InP. The technology applied allows monolithic integration of various active components with a minimum of extra technology steps     

A BiCMOS wideband operational amplifier with 900 MHz gain-bandwidth and 90 dB DC gain

A fully differential operational amplifier has been designed and fabricated for a novel high resolution and high frequency analog-to-digital converter(>12-bit). The amplifier mainly consists of folded cascode structure with current source as output loads and common-mode feedback circuits. The technique of feedforward compensation is used in order to improve the settling time and gain bandwidth (GBW) of this amplifier. This amplifier is integrated in 0.8 mm BiCMOS process with an active die area of 0.1 mm². The DC gain of this amplifier is 90 dB. The GBW and phase margin of this amplifier is 900 MHz and 47°, respectively. The power dissipation is minimized by using BiCMOS technology and is about 25 mW for 2 pF load capacitance. This level of performance is competitive with CMOS and BiCMOS operational amplifier circuits previously reported by nearly two orders of magnitude.Ecole Polytechnique of the University of Montreal     

22 dB gain semiconductor optical amplifier module using high numerical aperture aspheric lenses

A polarisation-insensitive semiconductor optical amplifier (SOA) module with a net gain of 22 dB is demonstrated. High numerical aperture, low aberration aspheric glass moulded lenses are efficiently used for optical coupling between the SOA chip and singlemode fibres.<>     

HBT matrix amplifier with gain-cell enhancing gain and bandwidth

A 2 /spl mu/m InGaP/GaAs heterojunction bipolar transistor (HBT) matrix amplifier with a new gain cell achieving 17.2 dB gain and 41 GHz bandwidth is reported. Using the gain-bandwidth products per transistor f/sub t/ and f/sub max/ as the figures of merit for measuring the effectiveness of amplifier design, it achieves 4.72 and 4.43, respectively, demonstrating among the best-reported bipolar broadband amplifiers     

分布式光纤拉曼放大器的增益平坦设计

介绍了在波分复用（WDM）系统中分布式光纤拉曼放大器（FRA）的理论分析模型。在此基础上，对增益平坦设计所需考虑的因素进行了分析；最后通过试验证明了它的有效性。     

High-power Er-Yb-doped fiber amplifier with multichannel gain flatness within 0.2 dB over 14 nm

A high-power Er-Yb fiber amplifier for WDM applications has been constructed using a matched mid-stage gain shaping filter. Using precise measurements and careful design considerations, excellent gain flatness, with less than 0.2-dB variation, was obtained over a 14-nm spectral bandwidth. By simply adjusting the pump power to the amplifier, it was possible to maintain the flattened amplifier gain shape over a wide input signal power range from -11 dBm to 1 dBm. A low external noise figure of 5.2 dB at 1-dBm signal input and a high-output power up to 24.6 dBm has been measured.