K波段波导平面电路FET混频器的设计

本文介绍一种K波段波导平面电路GaAs FET混频器的形式、设计方法和特点。这种电路具有结构简单、新颖、加工调试方便、性能良好等特点。利用国产WC 603型管(本征噪声系数为2.6dB,增益为6dB)所制作的实际混频器的变频增益大于4.3dB,噪声系数小于4dB,可作为卫星地面接收机的低噪声混频器部件。     

一种适用于低中频和零中频GPS接收机的CMOS混频器

基于0.18 μm RF CMOS工艺,设计了一种可用于低中频和零中频GPS接收机的CMOS正交混频器.通过固定电流注入技术,减小了混频器的噪声系数.将混频器的开关管偏置在线性区,可进一步降低混频器的1/f噪声,适用于零中频接收机.在1.8 V的工作电压下,由Cadence Spectre RF仿真可得,混频器的转换增益为7.1 dB,而4 MHz和20 kHz中频输出的SSB噪声系数分别为8.7 dB和12.3 dB.     

30GHz FET接收机

本文描述了在27.5～30.0GHz下工作的噪声系数为4.6dB、频带中心转换增益为17dB的GaAsFET接收机。为此接收机研制了一个FET三级放大器(噪声系数4.4dB,增益17.5dB),一个25GHzFET振荡器(输出功率10mW)和双栅FET混频器(转换增益3dB,噪声系数10dB)。     

一种高增益低噪声混频器的设计

本文设计了一种高增益低噪声混频器,提出了一种新的吉尔伯特混频器负载级电路.该混频器在3.3V工作电压下,基于Chartered 0.25 μ m标准CM0S工艺设计模型进行仿真验证,优化结果表明,该混频器的增益达到9.02dB,噪声系数为8.88dB,谐波失真降低为-17.29dB.     

1-18GHz微带巴伦双平衡混频器

本文介绍了一种微带巴伦多倍频程微波集成双平衡混频器。它是由宽带微带巴伦和二极管电桥组成。这种微带巴伦双平衡混频器显示了良好的噪声特性和隔离特性。在1-18GHz工作频率范围内,最大双边带噪声系数为8.7dB,平均双边带噪声系数约6dB;本振端一信号端、本振端一中频端隔离度均大于15dB。     

一种K波段高增益低噪声折叠式双平衡混频器

基于130 nm RF CMOS工艺,设计了一种适用于K波段的高增益低噪声折叠式下变频混频器。采用折叠式双平衡电路结构,混频器的跨导级和开关级可以在不同的偏置条件下工作,为优化两级的噪声提供了极大的自由度。采用电流复用技术,混频器的转换增益和噪声系数得以显著改善。后仿真结果表明,该混频器在本振功率为-3 dBm时,实现了27.8 dB的转换增益和7.36 dB的噪声系数。在射频信号为24 GHz处的输入1 dB压缩点P1dB为-18.8 dBm,本振端口对射频端口的隔离度大于60.2 dB。该电路工作于1.5 V的电源电压,总直流电流为12 mA,功耗为18 mW。该混频器以适中的功耗获得了极高的整体性能,适用于低功耗、低噪声24 GHz雷达接收机。     

应用梁式引线管的Ka波段集成鳍线平衡混频器

本文介绍了两种Ka波段集成鳍线平衡混频器的设计与性能，混频器均使用廉价的梁式引线混频二极管，介质材料采用国产的仿RT－Duroid 5880 ,，经测试两种混频器包括中放在内的DSB噪声系数分别为5．0dB和5.3dB。本振射频隔离度均优于20dB，测试中频频率为70MHZ。     

六毫米波段交叉杆式悬置微带线混合集成混频器

本文给出六毫米波段交叉杆式悬置微带线混合集成混频器的设计过程。采用国产同轴陶瓷封装型肖特基势垒混频二极管,当本振为47.4GHz时,测得双边带噪声系数7.6dB(包括前中噪声系数1.5dB)。     

12GHz镜频回收混频器

噪声系数是描述混频器性能的主要指标,而混频器噪声系数主要由混频二极管、混频电路及主要频率终端来决定。目前,一般采用镜频回收电路来降低噪声系数。12GHz 镜频回收混频器是低噪声混频器,它由正交场混频器和立体平面滤波器所构成。与一般正交场混频器相比,噪声系数改善1dB 以上。由于正交场混频器已经成熟,而镜频回收效果主要取决于滤波器性能的优劣,因此,设计制作滤波器是本研制工作的重点。根据本文提供的工程设计曲线设计的滤波器,理论、实际一致性好。该滤波器带内插损小(0.5dB 以内),带外抑制度高,兼备了波导滤波器和微带滤波器的优点。且结构简单,成本低。本文叙述镜频回收原理、方案、电路及其工作状态,着重介绍立体平面滤波器的原理与设计。     

Ka波段单片砷化镓平衡混频器

用于毫米波平衡混频器的单片集成电路已在半绝缘砷化镓衬底上研制成功。在交叉混频器中,砷化镓基片作为一根悬浮的带线。在30到32GHz整个频率范围上,应用一个单片砷化镓平衡混频滤波器片就可获得4.5dB的双边带噪声系数。单片砷化镓平衡混频器已最优化,并且以平面组件的形式与混合式微波集成前置放大器相接,因而大大改善了射频带宽并减小了尺寸。在从31到39GHz频率范围内,应用仅为0.5×0.43平方英寸的一块砷化镓片,就可获得低于6dB的双边带噪声系数。这个噪声系数包括了前置中频放大器(5～500MHz)的1.5dB噪声系数。     

X-Band Integrated Circuit Mixer with Reactively Terminated Image

An X-band mixer using GaAs Schottky barrier diodes with a thin-film 500-MHz IF preamplifier was developed using hybrid microwave integrated circuit techniques. The balanced mixer had filters to provide a short circuit at the image frequency. The entire mixer preamplifier occupied an area of only 0.38 square inches and had a noise figure of 6.7 dB which corresponded quite closely to the theoretical noise figure considering all losses. The thin-film IF amplifier alone had a 2.2-dB noise figure and the mixer IF amplifier coupling network had a loss of 0.4 dB.     

X-Band Integrated Circuit Mixer with Reactively Terminated Image

An X-band mixer using GaAs Schottky barrier diodes with a thin-film 500-MHz IF preamplifier was developed using hybrid microwave integrated circuit techniques. The balanced mixer had filters to provide a short circuit at the image frequency. The entire mixer preamplifier occupied an area of only 0.38 square inches and had a noise figure of 6.7 dB which corresponded quite closely to the theoretical noise figure considering all losses. The thin-film IF amplifier alone had a 2.2-dB noise figure and the mixer IF amplifier coupling network had a loss of 0.4 dB.     

X-band integrated circuit mixer with reactively terminated image

AnX-band mixer using GaAS Schottky barrier diodes with a thin-film 500-MHz IF preamplifier was developed using hybrid microwave integrated circuit techniques. The balanced mixer had filters to provide a short circuit at the image frequency. The entire mixer preamplifier occupied an area of only 0.38 square inches and had a noise figure of 6.7 dB which corresponded quite closely to the theoretical noise figure considering all losses. The thin-film IF amplifier alone had a 2.2-dB noise figure and the mixer IF amplifier coupling network had a loss of 0.4 dB.     

A wide band up-conversion mixer for cable television tuner

An up-conversion mixer implemented in a 0.35μm SiGe BiCMOS technology for a double conversion cable TV tuner is described, The mixer converts the 100MHz to 1000MHz band to the Intermediate Frequency of 1GHz above. The mixer meets the linearity and noise figure requirements for a TV tuner. The noise figure （IF） of 19.2-17.5dB, ldB compression of 12.1dBm, and gain of-1-0.7dB in the 900MHz band are achieved at a supply voltage of 5V. The power consumption is 47mW.     

A 1-GHz BiCMOS RF front-end IC

An RF front-end IC containing a low-noise amplifier and mixer is described. On-chip temperature and supply-voltage compensation is used to stabilize circuit performance. Realized in a BiCMOS process, the circuit consumes 13.0-mA total current from a 5-V supply. The amplifier gain at 900 MHz is 16 dB, the noise figure is 2.2 dB, and the input third-order intermodulation intercept is -10 dBm. The mixer input third-order intermodulation intercept is +6 dBm with 15.8 dB noise figure     

A Low Voltage Mixer With Improved Noise Figure

A 5.2 GHz low voltage mixer with improved noise figure using TSMC 0.18 $mu$m CMOS technology is presented in this letter. This mixer utilizes current reuse and ac-coupled folded switching to achieve low supply voltage. The noise figure of the mixer is strongly influenced by flicker noise. A resonating inductor is implemented for tuning out the parasitic components, which not only can improve noise figure but also enhance conversion gain. A low voltage mixer without resonating technique has also been fabricated and measured for comparison. Simulated results reveal that flicker corner frequency is lowered. The measured results show 4.5 dB conversion gain enhancement and 4 dB reduction of noise figure. The down-conversion mixer with resonating inductor achieves 5.8 dB conversion gain, ${-}16$ dBm ${rm P}_{{rm 1dB}},$ ${-}6$ dBm ${rm IIP}_{3}$ at power consumption of 3.8 mW and 1 V supply voltage.      

A 0.18μm CMOS Gilbert low noise mixer with noise cancellation

正This paper presents a broadband Gilbert low noise mixer implemented with noise cancellation technique operating between 10 MHz and 0.9 GHz.The Gilbert mixer is known for its perfect port isolation and bad noise performance.The noise cancellation technique of LNA can be applied here to have a better NF.The chip is implemented in SMIC 0.18μm CMOS technology.Measurement shows that the proposed low noise mixer has a 13.7-19.5 dB voltage gain from 10 MHz to 0.9 GHz,an average noise figure of 5 dB and a minimum value of 4.3 dB.The core area is 0.6 x 0.45 mm~2.     

A 2.4-GHz sub-mW CMOS receiver front-end for wireless sensors network

A 2.4-GHz fully integrated CMOS receiver front-end using current-reused folded-cascode circuit scheme is presented. A configuration utilizing vertically stacked low-noise amplifier (LNA) and a folded-cascode mixer is proposed to improve both conversion gain and noise figure suitable for sub-mW receiver circuits. The proposed front-end achieves a conversion gain of 31.5dB and a noise figure of 11.8dB at 10MHz with 500-/spl mu/A bias current from a 1.0-V power supply. The conversion gain and noise figure improvements of the proposed front-end over a conventional merged LNA and single-balanced mixer are 11dB and 7.2dB at 10MHz, respectively, with the same power consumption of 500/spl mu/W.     

A 0.35μm CMOS Mixer for 2.45-GHz RFID Application

A RF mixer with both low noise and high linearity is designed,operating at 2.45-GHz ISM band for RFID application.The designed mixer uses an optimal input matching network and the carefully chosen sizes of transistors,also with the appropriate bias point,to improve the noise figure(NF).Also,with a resonant LC loop as the current source and a parallel PMOS-resistor as the load,the mixer has a high linearity.The post simulation results show that the single side- band noise figure of 8.57 dB,conversion gain of 10.02 dB,input 1-dB compression point(P-1dB)of-8.33 dBm,and input third-order intercept point(IIP3)of 5.35 dBm.