DC and Dynamic Characteristics of P-Doped and Tunnel Injection 1.65-μm InAs Quantum-Dash Lasers Grown on InP (001)

We have studied the characteristics of 1.65-mum InAs self-organized quantum-dash lasers grown on InP (001) substrates, wherein special techniques of p-doping of quantum dashes and tunnel injection are incorporated for the first time. We measured a very large T₀ (196 K) in p-doped quantum-dash lasers, accompanied by an increase in threshold current density (J_th~1600 A/cm² ), compared to the undoped quantum-dash lasers (T₀=76 K and J_th~950 A/cm²). The p-doped lasers exhibit a maximum 3-dB bandwidth of 8 GHz, chirp ~1.0 Aring, and alpha-parameter ~1.0 (measured at subthreshold bias conditions) at a temperature of 278 K. Similar undoped quantum-dash lasers exhibit a 3-dB bandwidth of 6 GHz. A self-consistent model, that includes Auger recombination in quantum dashes, is developed to calculate the threshold current at various temperatures. A comparison of the calculated threshold current and T₀ with measured values reveals that Auger recombination in quantum dashes plays a major role in determining the values of threshold current and T₀ in both undoped and p-doped quantum-dash lasers. While p-doping increases the gain and differential gain, the presence of wetting layer states, the relatively large inhomogeneous broadening of quantum dashes, and the substantially increased Auger recombination upon p-doping severely limit the potential benefits. Superior characteristics, including large modulation bandwidth (f_{-3 dB}~12 GHz), near-zero alpha-parameter, and very low chirp (~0.3 Aring), are achieved when the technique of tunnel injection is also utilized     

带有开口谐振环引向器的新型端射天线设计

设计一种带有开口谐振环(SRRs)引向器的新型端射天线。天线由反射板、地板、辐射单极子和开口谐振环组成。天线的反射板结构使天线在低频处阻抗匹配,有效地提高了天线带宽;用六对开口谐振环结构作为天线的引向器,很好地实现了天线的高增益。仿真和实测结果表明,天线阻抗带宽达到73.7%(2～4.21 GHz),增益为4.3～10.3 dB;在天线的带宽内,天线的辐射方向图稳定,设计的天线满足S波段无线通信领域的需求。     

InGaAs/InGaAsP MQW optical amplifier integrated withgrating-assisted vertical-coupler noise filter

A photonic integrated circuit with an InGaAs/InGaAsP multiple-quantum-well (MQW) traveling-wave optical amplifier and a grating-assisted vertical-coupler filter as a noise filter have been demonstrated. A fiber-to-amplifier/filter gain of ~0.5 dB and a 3-dB filter bandwidth (FWHM) of ~70 Å at 1.56 μm filter center wavelength have been achieved. This photonic circuit is potentially suitable as a building-block for preamplifier lightwave receivers or high-gain, high-power optical amplifiers which are essential for optical communication systems and lightwave networks     

Dynamics and Temperature-Dependence of 1.3-μm GaInNAs Double Quantum-Well Lasers

We have measured the small-signal modulation response of 1.3-mum ridge waveguide GaInNAs double quantum-well lasers over a wide range of temperatures (25 degC-110 degC) and analyzed the temperature dependence of the modulation bandwidth and the various bandwidth limiting effects. The lasers have low threshold currents and high differential efficiencies with small temperature dependencies. A short-cavity (350 mum) laser has a modulation bandwidth as high as 17 GHz at room temperature, reducing to 4 GHz at 110 degC, while a laser with a longer cavity (580 mum) maintains a bandwidth of 8.6 GHz at 110 degC. We find that at all ambient temperatures the maximum bandwidth is limited by thermal effects as the temperature increases with current due to self-heating. The reduction and subsequent saturation of the resonance frequency with increasing current is due to a reduction of the differential gain and an increase of the threshold current with increasing temperature. We find large values for the differential gain and the gain compression factor. The differential gain decreases linearly with temperature while there is only a weak temperature dependence of the gain compression. At the highest temperature we also find evidence for transport effects that increase the damping rate and reduce the intrinsic bandwidth     

A proposal of broad-bandwidth vertical-cavity laser amplifier

We propose a generic vertical-cavity amplifier (VCA) using a coupled-cavity design to broaden the bandwidth. Calculations are made for cavities with GaAs-AlAs and GaAs-Al_xO₂ distributed Bragg reflectors (DBR). We found that at reasonable pumping levels the VCA increased the bandwidth by 85% (GaAs-AlAs) to 500% (GaAs-Al_xO₂) as compared to a simple two-mirror structure similar to vertical-cavity surface-emitting lasers. In particular, the GaAs-AlAs VCA shows a bandwidth of 2 nm at 6-dB signal gain, while the GaAs-Al_xO₂ VCA demonstrates a 5-nm bandwidth at 6-dB signal gain with no ripple at required single-pass power gain of ~2-2.5%. Furthermore, as large as 30-nm bandwidth in a lossless bandpass filter can be obtained     

一种具有温度补偿的宽带CMOS可变增益放大器

设计实现了一个具有温度补偿的宽带CMOS可变增益放大器,该可变增益放大器的核心电路由三级基于改进型Cherry-Hooper结构的可变增益单元级联而成,并通过一种温度系数增强的且可编程的偏置电路和增益控制电路对可变增益放大器的增益进行温度补偿。采用中芯国际0.13μm CMOS工艺流片,测试结果表明可变增益放大器的可变增益范围为-13～27dB,经过温度补偿后,在相同增益控制电压下其增益在0～75°C温度范围内的变化范围不超过3dB。可变增益放大器的3dB带宽为0.8～3GHz,输入1dB压缩点为-50～-21dBm,在1.2V电压下,功耗为21.6mW。     

（英）D波段InP基高增益、低噪声放大芯片的设计与实现

利用90-nm InAlAs/InGaAs/InP HEMT工艺设计实现了两款D波段（110~170 GHz）单片微波集成电路放大器。两款放大器均采用共源结构,布线选取微带线。基于器件A设计的三级放大器A在片测试结果表明：最大小信号增益为11.2 dB@140 GHz,3 dB带宽为16 GHz,芯片面积2.6×1.2 mm2。基于器件B设计的两级放大器B在片测试结果表明：最大小信号增益为15.8 dB@139 GHz,3dB带宽12 GHz,在130~150 GHz频带范围内增益大于10 dB,芯片面积1.7×0.8 mm2,带内最小噪声为4.4 dB、相关增益15 dB@141 GHz,平均噪声系数约为5.2 dB。放大器B具有高的单级增益、相对高的增益面积比以及较好的噪声系数。该放大器芯片的设计实现对于构建D波段接收前端具有借鉴意义。     

Honeycomb wire antenna

A honeycomb wire antenna is numerically analysed. The radiation in the direction normal to the antenna plane is linearly polarised with a low cross-polarisation component of <-30 dB. The gain is dependent on the interior angles of the radiation cell. The maximum gain for a honey comb antenna of two cells by 17 cells with interior angles of 70° is ~20.5 dB, and the gain drop over a 4% frequency bandwidth is ~2.56 dB     

一种新型带宽自动校准有源低通滤波器

为了消除工艺、电压、温度(Process,Voltage,Temperature,PVT)波动及老化对片上集成有源滤波器带宽的影响,提出了一种新型带宽自动校准有源低通滤波器.通过时域采样有源低通滤波器对输入的响应,并与参考电压进行比较,算法电路根据比较结果调整滤波器电容大小,自动搜索到最佳的滤波器带宽.为了消除带宽校准过程中电路响应延迟对校准精度的影响,在时钟及其二分频信号控制下分别执行一次校准,然后通过倍乘和减法运算得到最终对P VT波动、老化及电路响应延迟均不敏感的精确的滤波器带宽.在65 nm互补金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)工艺下设计了一款带宽自动校准有源低通滤波器,仿真结果显示其低频增益为67 dB,在8～50 MHz带宽范围内带宽校准误差在0.7％以内.     

一种单层双频宽带GNSS测量型天线设计

基于单介质层结构,设计了一款双频宽带全球卫星导航系统(GNSS)测量型天线,天线采用单层高性能轻质复合材料作为双频微带天线共用的辐射介质基板。双频辐射贴片单元采用共面齿轮结构设计,并在天线单元外围设置一系列短路销钉来有效改善天线轴比带宽、低仰角辐射增益等参数,四馈点馈电技术和宽带耦合相移馈电网络的应用保证了天线相位中心稳定度更加可靠。设计结果表明,该双频天线单元大于等于5 d Bi的辐射增益带宽均大于245 MHz,高低频3 d B轴比带宽分别为-76°~76°和-116°~116°,低仰角90°增益滑落均小于11.5 d B,经实物样机对比测试分析,实测结果与仿真结果基本吻合。实测频谱显示,该天线工作频段覆盖目前在运行的四大导航系统全部工作频点,较好满足GNSS精确测量与定位系统终端设备应用需求。     

加载新型复合左右手传输线单元的宽带单极子天线设计

提出了一种新颖的一维复合左右手传输线(CRLH-TL)单元,并将其加载到传统微带馈电的单极子天线上,设计出一种宽带的变形单极子天线。该宽带天线工作在1.67~2.67GHz,相对带宽达到了46%,有效地覆盖了DCS(Digital Cellular System,1710~1880MHz)、PCS(Personal Communication Service,1850~1990MHz)、Wi-Fi(Wireless Fldelity,2400~2480MHz)等多个通信频段。首先,利用CRLH-TL的相位补偿效应,结合传统单极子天线的自身谐振,得到多个谐振工作频点;然后,通过参数优化,使得其中的两个工作频点相互靠近形成一个更宽的工作频段,并且在工作频段内获得了较好的增益和稳定的方向图。最后,对所设计的天线进行实物加工并测试,测试结果与仿真结果吻合良好。     

一种新型毫米波磁电偶极子天线阵列设计

该文将磁电偶极子天线作为辐射阵子,并应用一种共面波导馈电网络,研究并设计了一种新型44毫米波天线阵列。这种设计不仅具有很宽的阻抗带宽和增益带宽,而且价格低廉易于生产。仿真和测试结果表明,此天线阵列的相对阻抗带宽为54.5%, 3 dB增益带宽为37.1%,在工作频带内(40.2~70.0 GHz),最大增益为18.1 dBi。而基于其他技术设计的44毫米波天线阵列(如微带天线、偶极子天线)工作频带宽度一般在20%左右,增益一般在16~17 dBi。所以该文提出的天线阵列设计具有明显的优势。另外,仿真设计结果和实测的电参数数据有较好的一致性。     

一种工作于1.6 GHz ~20 GHz 的高增益对跖Vivaldi 天线

设计了一款工作于1.6 GHz ~20 GHz 的高增益对跖Vivaldi 天线,该天线在常规对跖Vivaldi 天线的左右两端加载半椭圆贴片结构,改善低频驻波比特性,进而提高了天线的阻抗带宽;在天线主轴方向加载梯形基板,将天线表面电场约束在天线的主轴方向上,不但消除了天线增益峰值的偏移问题,而且提高了天线的增益值。实测结果表明:该天线在1. 6 GHz ~20 GHz 频段内电压驻波比小于2,增益为1. 5 dB ~11. 1 dB。此外,该天线增益峰值偏移现象得到明显抑制,具有辐射方向性好、增益高、交叉极化比小的优点。     

Monolithic integration of GaAs photoconductors with a field-effect transistor

A one-stage monolithic integration of a tandem pair of GaAs photoconductors (PCs) with a field-effect transistor (FET) is reported. The PC-FET exhibits a bandwidth in excess of 1 GHz and a gain of 6 dB at midband. A very low noise figure of ~3 dB in the FET is also achieved.     

Coaxial-feed axial mode hemispherical helical antenna

A coaxial-feed axial mode hemispherical helical antenna is studied experimentally and theoretically. Results for a 3-turn hemispherical helix indicate that circular polarisation can be obtained over a broad beamwidth. The gain bandwidth is ~33% and the peak gain is 7.6 dB. The input impedance shows that it is a standing wave antenna     

基于基片集成同轴线的双馈点圆极化天线

提出了一种采用基片集成同轴线(SICL)馈电的双馈点圆极化微带贴片天线。具体通过多馈点法实现圆极化,并通过背腔加载提高增益,增加带宽,减小后瓣,降低互耦,提高天线性能。经过仿真验证,该天线能够在42.42～56.69 GHz之间实现S₁₁<-10 dB(相对带宽为28.8%@51 GHz),在45.26～48.08 GHz之间实现轴比小于3 dB,最大增益8.9 dBi。     

Wideband Circularly Polarized Vertical Patch Antenna

A compact circularly polarized (CP) vertical patch antenna is presented that employs a microstrip to slot-line transition for a wideband operation. The antenna is composed of two vertical patches, which are shaped as helix to obtain a broadband CP performance. The loop structure and the vertical overlap configuration lead to significant size reduction as much as 48% when compared to that of the printed dual-loop antenna. Simulated results agree well with the measurement, showing that the antenna possesses a wide axial ratio $({rm AR}≪ 3~{rm dB})$ bandwidth of 28.5%, and a broad return loss $(S _{11} ≪ -10~{rm dB})$ bandwidth of 37.8%. Also, it has symmetric radiation patterns and low cross-polarization levels in the broadside direction over the operating bandwidth. Moreover, the antenna gain is around 8 dBi, and it is very stable across the operating bandwidth.      

应用于多模接收机的低功耗可编程增益放大器

针对多模接收机的应用,提出了引入一条闭环伪通路技术结构的可编程增益放大器,在保持一定的线性度及噪声性能的基础上,以较低的功耗实现较大的带宽.该电路增益步长为2 dB,增益变化范围1～39 dB.电路中内嵌了直流失调消除模块防止直流漂移引起的阻塞.芯片采用SMIC 0.13 μm 1P8M RF CMOS工艺实现.测试结...     

Photonic Microwave Channel Selective Filter Incorporating a Thermooptic Switch Based on Tunable Ring Resonators

A photonic microwave (MW) channel selective filter was demonstrated incorporating a 1times2 switch based on two tunable polymeric resonators with different free-spectral ranges (FSRs). Each resonator plays a role as an ON-OFF switch through the thermooptic effect, consisting of two cascaded rings with an electrode formed on one of them. The optical signal carrying the MW signal is routed to either port of the switch and detected to exhibit the filtered output at the frequency determined by the FSR of the corresponding resonator. When the channel centered at 10 GHz was chosen, the extinction ratio was ~30 dB, the bandwidth 1 GHz, and the electrical power consumption 4.1 mW. And for the other channel located at 20 GHz, we have achieved the extinction ratio of ~30 dB, the bandwidth of 2 GHz, and the required power of 8.0 mW. Finally, the crosstalk between the selected and blocked channels was higher than 24 dB.     

一种新型低剖面、宽频带全向天线设计

设计了一种改进结构的嵌入盘形天线,该天线具有低剖面、宽频带及全向的特点,并要求工作时最大辐射方向是45°。通过对嵌入盘形天线进行刻缝和加导电柱等结构上的改进后,可以在降低天线尺寸的前提下实现天线的低剖面、宽频带以及较大的水平增益。天线中心频率为3.0GHz,剖面高度远小于中心频率波长。在2.5～4.0GHz频带内,驻波比小于2,并且,水平方向增益可达-2dB。用AnsoftHFSS软件进行仿真计算,并对实际天线进行了测试。测试结果与仿真结果有很好的一致性,满足设计要求。