Hot Isostatic Pressing of Si3N4 Powder Compacts and Reaction-Bonded Si3N4

Hot isostatically pressed silicon nitride was produced by densifying Si₃N₄ powder compacts and reaction-bonded Si₃N₄ (RBSN) parts with yttria as a sintering additive. The microstructure was analyzed using scanning electron microscopy, X-ray diffraction, and density measurements. The influence of the microstructure on fracture strength, creep, and oxidation behavior was investigated. It is assumed that the higher amount of oxygen in the Si₃N₄ starting powder compared with the RBSN starting material leads to an increased amount of liquid phase during densification. This results in grain growth and in a larger amount of grain boundary phase in the hot isostatically pressed material. Compared with the hot isostatically pressed RBSN samples therefore, strength decreases whereas the creep rate and the weight gain during oxidation increase.     

Fracture and Subcritical Crack-Growth Behavior of Y-Si-Al-O-N Glasses and Si3N4 Ceramics

Fracture and environmentally assisted subcritical crack-growth processes are examined in bulk Y-Si-Al-O-N oxynitride glasses with compositions typical of the grain boundary phase of silicon nitride ceramics. Both long-crack (in compact tension specimens) as well as short-crack behavior (using indentation techniques) were investigated to establish a reliable fracture toughness and to elucidate the anomalous densification behavior of the oxynitride glass. Environmentally assisted subcritical crack-growth processes were studied in inert, moist, and wet environments under both cyclic and static loading conditions. Behavior is discussed in terms of the interaction of the environment with the crack tip. Likely mechanisms for environmentally assisted crack growth are discussed and related to the subcritical crack-growth behavior of silicon nitride ceramics.     

Kinetics of β-Si3N4 Grain Growth in Si3N4 Ceramics Sintered under High Nitrogen Pressure

The kinetics of anisotropic β-Si₃N₄ grain growth in silicon nitride ceramics were studied. Specimens were sintered at temperatures ranging from 1600° to 1900°C under 10 atm of nitrogen pressure for various lengths of time. The results demonstrate that the grain growth behavior of β-Si₃N₄ grains follows the empirical growth law Dⁿ– D₀ⁿ = kt , with the exponents equaling 3 and 5 for length [001] and width [210] directions, respectively. Activation energies for grain growth were 686 kJ/mol for length and 772 kJ/mol for width. These differences in growth rate constants and exponents for length and width directions are responsible for the anisotropy of β-Si₃N₄ growth during isothermal grain growth. The resultant aspect ratio of these elongated grains increases with sintering temperature and time.     

Grain Growth-Controlled Giant Permittivity in Soft Chemistry CaCu3Ti4O12 Ceramics

We report a dielectric constant of up to 5.4 × 10⁵ at room temperature and 1 kHz for CaCu₃Ti₄O₁₂ (CCTO) ceramics, derived from multiphase powders (coprecipitation products), made by a "chimie douce" (coprecipitation) method, and then sintered in air. The sintered products are pure-phase CCTO ceramics. The high dielectric constant is achieved by tuning the size of grains and the thickness of grain boundaries. The grain growth is controlled by varying the concentration of excess CuO in the initial powder (calcined coprecipitation products) between 1 and 3.1 wt%. The dielectric constant of pure CCTO ceramics increases with the initial CuO concentration, reaching its maximum at 2.4 wt% of CuO. A further increase of excess CuO in powders results in a permittivity decrease, accompanied by the formation of CuO as a separate phase in the sintered products. The unusual grain growth behavior is attributed to a eutectic reaction between CuO and TiO₂ present in the initial powder.     

Phase Evolution in Heat-Treated Si3N4 with Additions of Yb2O3

The heat treatment of silicon nitride (Si₃N₄) ceramics with additions of 8, 12, and 16 wt% Yb₂O₃ was carried out at different temperatures and the evolution of grain boundary (GB) phase was investigated systematically by X-ray diffraction (XRD) as well as scanning electron and transmission electron microscopic analyses. XRD results reveal that the extent and the ease of GB crystallization increase with increasing the Yb₂O₃ content, and that high heat-treatment temperatures in general favor crystallization of the quaternary compounds such as the Yb₄Si₂O₇N₂ phase. These results provide an insight into the GB phase evolution in the Yb-system Si₃N₄ ceramics subjected to a postsintering heat treatment.     

Mechanical Property and Oxidation Behavior of Self-Reinforced Si3N4 Doped with Re2O3 (Re=Yb, Lu)

In this work, self-reinforced silicon nitrides with β-Si₃N₄ seeds doped with Re₂O₃ (Re=Yb, Lu) were investigated. Firstly, the two kinds of seeds were obtained by heating α-Si₃N₄ powder with Yb₂O₃ or Lu₂O₃, respectively. Then the self-reinforced silicon nitride ceramics were prepared by HP-sintering of α-Si₃N₄ powder, Re₂O₃ as additive, and the as-prepared seeds. Oxidation test was carried out at 1400°C in air for 100 h with thermogravimetry analysis (TGA) measurement. Mechanical properties, scanning electronic microscopy microstructures, and X-ray diffraction patterns were measured before and after oxidation. The results indicated that the introduction of the seeds doped with Re₂O₃ (Re=Yb, Lu) could obviously increase the toughness and keep the room temperature and high-temperature strength of the ceramics at high values. After oxidation, the crystalline phase in grain boundary changed and the mechanical properties decreased. TGA showed a parabolic weight gain and the oxidation mechanism was discussed.     

Cyclic Fatigue of Hot-Pressed Si3N4

The cyclic fatigue behavior of two grades of hot-pressed silicon nitride was investigated. Flat, cantilever-type specimens were tested at temperatures up to 1300°C, in air, where the load was applied by an eccentric driver rotating at 1800 rpm, with a zero mean stress. The lifetime of the lower purity material at temperatures up to 1200°C was controlled by a stress corrosion mechanism. Above 1200°, and for both grades of material, plastic deformation, probably by grain boundary sliding, was rate controlling.     

Comparison of High-Temperature Crack Growth in SiC-Whisker-Reinforced Mullite and Si3N4

Crack growth behavior under creep conditions was studied in SiC-whisker-reinforced mullite and silicon nitride. Tests of four-point bend specimens with indentation cracks were periodically interrupted to observe the creep behavior. At each interruption the bulk creep strain of the specimen, the growth of the indentation cracks, and the nucleation and growth of creep-induced cracks were measured. A strong linear correlation was observed in both materials between the crack growth rate and the creep strain rate. For a given strain rate, cracks in the silicon nitride composite propagated at velocities about an order of magnitude greater than those in the mullite composite. On the other hand, for similar nominal stresses, creep rates in the silicon nitride composites were about an order of magnitude less than with the mullite composite.     

Fractographic Montage for a Si3N4–SiC Nanocomposite

A silicon nitride–silicon carbide nanocomposite has been prepared by an in situ method that utilizes C+SiO₂ carbo-thermal reduction during the sintering process. The materials consist of a silicon nitride matrix, with an average grain size of 140 nm, and inter- and intragranular SiC particles with sizes of approximately 250 and 45 nm, respectively. The four-point bending strength and its distribution were investigated. The fracture origins were identified and characterized using fractographic methods, and a fractographic montage of the Weibull plot and fracture origins was constructed. The fracture origins were subsurface and volume located processing defects with sizes from 5 to 460 μm, mainly in the form of clusters of pores, together with clusters of large SiC grains.     

Sintering of Si3N4 with the Addition of Rare-Earth Oxides

The effect of rare-earth oxide additives on the densification of silicon nitride by pressureless sintering at 1600° to 1700°C and by gas pressure sintering under 10 MPa of N₂ at 1800° to 2000°C was studied. When a single-component oxide, such as CeO₂, Nd₂O₃, La₂O₃, Sm₂O₃, or Y₂O₃, was used as an additive, the sintering temperature required to reach approximate theoretical density became higher as the melting temperature of the oxide increased. When a mixed oxide additive, such as Y₂O₃–Ln₂O₃ (Ln=Ce, Nd, La, Sm), was used, higher densification was achieved below 2000°C because of a lower liquid formation temperature. The sinterability of silicon nitride ceramics with the addition of rare-earth oxides is discussed in relation to the additive compositions.     

Oxidation of Si3N4 Alloys: Relation to Phase Equilibria in the System Si3N4-SiO2-MgO

The oxidation resistance at 1400°C of silicon nitride alloys hot-pressed with magnesia was investigated as a function of the phase content of the alloys. The extent of oxidation, the products of oxidation, their stratification, and the continuity of the oxide scale are all dependent on the initial composition. Also, the compositions of the alloys themselves change during oxidation. The findings can be interpreted on the basis of compositional paths in the equivalence phase diagram. Reasons for the outward diffusion of Mg and impurities are given and the effect of the secondary phase on oxidation kinetics is discussed.     

Tribological Behavior of Si3N4 and Si3N4/Carbon Fiber Composites Against Stainless Steel Under Water Lubrication for a Thrust-Bearing Application

The tribological behavior of Si₃N₄ ceramics and Si₃N₄/carbon fiber composites sliding against stainless steel under water lubrication was investigated using a thrust-bearing-type test method with normal applied loads varying from 0 to 1000 N in 100 N increments. In the case of the monolithic Si₃N₄, the friction coefficient was found to increase up to 0.4 the first time the applied load was increased from 100 to 200 N, and sudden failure of the ceramic ring specimen occurred. In the case of the Si₃N₄/carbon fiber composite, a low friction coefficient was maintained up to the maximum normal load of 1000 N. The addition of the carbon fibers to the silicon nitride ceramics effectively restricts material transfer from the stainless steel to the Si₃N₄ worn surface due to reduction of solid–solid contact through the solid lubricating effect of the carbon fibers.     

Pressureless Sintering of α-Si3N4 Porous Ceramics Using a H3PO4 Pore-Forming Agent

A new method for preparing high bending strength porous silicon nitride (Si₃N₄) ceramics with controlled porosity has been developed by using pressureless sintering techniques and phosphoric acid (H₃PO₄) as the pore-forming agent. The fabrication process is described in detail and the sintering mechanism of porous ceramics is analyzed by the X-ray diffraction method and thermal analysis. The microstructure and mechanical properties of the porous Si₃N₄ ceramics are investigated, as a function of the content of H₃PO₄. The resultant high porous Si₃N₄ ceramics sintered at 1000°–1200°C show a fine porous structure and a relative high bending strength. The porous structure is caused mainly by the volatilization of the H₃PO₄ and by the continous reaction of SiP₂O₇ binder, which could bond on to the Si₃N₄ grains. Porous Si₃N₄ ceramics with a porosity of 42%–63%, the bending strength of 50–120 MPa are obtained.     

Densification of Si3N4 with LiYO2 Additive

This paper deals with the densification and phase transformation during pressureless sintering of Si₃N₄ with LiYO₂ as the sintering additive. The dilatometric shrinkage data show that the first Li₂O- rich liquid forms as low as 1250°C, resulting in a significant reduction of sintering temperature. On sintering at 1500°C the bulk density increases to more than 90% of the theoretical density with only minor phase transformation from α-Si₃N₄ to β-Si₃N₄ taking place. At 1600°C the secondary phase has been completely converted into a glassy phase and total conversion of α-Si₃N₄ to β-Si₃N₄ takes place. The grain growth is anisotropic, leading to a microstructure which has potential for enhanced fracture toughness. Li₂O evaporates during sintering. Thus, the liquid phase is transient and the final material might have promising mechanical properties as well as promising high-temperature properties despite the low sintering temperature. The results show that the Li₂O−Y₂O₃ system can provide very effective low-temperature sintering additives for silicon nitride.     

Combustion Synthesis of Si3N4 by Selective Reaction of Silicon with Nitrogen in Air

Silicon nitride (Si₃N₄) was synthesized by a selective combustion reaction of silicon powder with nitrogen in air. The α/β-Si₃N₄ ratio of the interior product could be tailored by adjusting the Si₃N₄-diluent content in the reactant mixtures. The synthetic β-Si₃N₄ showed a well-crystallized rod-like morphology. Mechanical activation greatly enhanced the reactivity of silicon powder, and the slow oxidation of silicon at the sample surface promoted the combustion reaction in air. The formation mechanism of Si₃N₄ was analyzed based on a proposed N₂/O₂ diffusion kinetic model, and the calculated result is in good agreement with the experimental phenomenon.     

High-Temperature Failure Mechanisms of Hot-Pressed Si3N4 and Si3N4/Si3N4-Whisker-Reinforced Composites

The high-temperature flexural strength of hot-pressed silicon nitride (Si₃N₄) and Si₃N₄-whisker-reinforced Si₃N₄-matrix composites has been measured at a crosshead speed of 1.27 mm/min and temperatures up to 1400°C in a nitrogen atmosphere. Load–displacement curves for whisker-reinforced composites showed nonelastic fracture behavior at 1400°C. In contrast, such behavior was not observed for monolithic Si₃N₄. Microstructures of both materials have been examined by scanning and transmission electron microscopy. The results indicate that grain-boundary sliding could be responsible for strength degradation in both monolithic Si₃N₄ and its whisker composites. The origin of the nonelastic failure behavior of Si₃N₄-whisker composite at 1400°C was not positively identified but several possibilities are discussed.     

Mechanochemical-Activation-Assisted Combustion Synthesis of α-Si3N4

Combustion synthesis (CS) of α-silicon nitride (Si₃N₄) powders was accomplished at a nitrogen pressure lower than 3 MPa. The combination of mechanical activation and chemical stimulation was effective in enhancing the reactivity of Si powder reactants, which was responsible for the reduction of the minimum nitrogen pressure normally required for the CS of Si₃N₄. This breakthrough indicates that nitriding combustion of silicon in pressurized nitrogen could be promoted by activating the solid reactants instead of by increasing the nitrogen pressure. The phase content of α-Si₃N₄ in the as-synthesized product is over 90 wt%. Scanning electronic microscopy observation showed that the combustion-synthesized Si₃N₄ powders are submicron-sized particles with spherical morphologies.     

Influence of Phase Formation on Dielectric Properties of Si3N4 Ceramics

The influence of phase formation on the dielectric properties of silicon nitride (Si₃N₄) ceramics, which were produced by pressureless sintering with additives in MgO–Al₂O₃–SiO₂ system, was investigated. It seems that the difference in the dielectric properties of Si₃N₄ ceramics sintered at different temperatures was mainly due to the difference of the relative content of α-Si₃N₄, β-Si₃N₄, and the intermediate product (Si₂N₂O) in the samples. Compared with α-Si₃N₄ and Si₂N₂O, β-Si₃N₄ is believed to be a major factor influencing the dielectric constant. The high-dielectric constant of β-Si₃N₄ could be attributed to the ionic relaxation polarization.     

Fracture Energies of Tape-Cast Silicon Nitride with β-Si3N4 Seed Addition

The fracture energies of the tape-cast silicon nitride with and without 3 wt% rod-like β-Si₃N₄ seed addition were investigated by a chevron-notched-beam technique. The material was doped with Lu₂O₃–SiO₂ as sintering additives for giving rigid grain boundaries and good heat resistance. The seeded and tape-cast silicon nitride has anisotropic microstructure, where the fibrous grains grown from seeds were preferentially aligned parallel to the casting direction. When a stress was applied parallel to the fibrous grain alignment direction, the strength measured at 1500°C was 738 MPa, which was almost the same as room temperature strength 739 MPa. The fracture energy of the tape-cast Si₃N₄ without seed addition was 109 and 454 J/m² at room temperature and 1500°C, respectively. On the contrary, the fracture energy of the seeded and tape-cast Si₃N₄ was 301 and 781 J/m² at room temperature and 1500°C, respectively, when a stress was applied parallel to the fibrous gain alignment. The large fracture energies were attributable primarily to the unidirectional alignment fibrous Si₃N₄ grains.     

Grain Size-Microcracking Relation for NaZr2(PO4)3 Family Ceramics

The grain size-microcracking relation was examined for low thermal expansion NaZr₂(PO₄)₃ family ceramics. By measurements of the strength, Young's modulus, thermal expansion, and grain size of polycrystalline ceramics sintered at appropriate conditions, the critical grain size for microcracking was determined. The critical grain size was proportional to the inverse square of the maximum thermal expansion difference.