双模微带三角形贴片滤波器的改进设计

双模微带谐振器用于微波滤波器设计时具有独特的优点。近年来出现了一些由双模微带三角形贴片谐振器设计的滤波器,这类滤波器结构简单、尺寸小、通带损耗小、功率容限大。在传统的双模微带三角形带通滤波器的基础上,利用分形结构提出一种新型的双模微带三角形带通滤波器,并对此结构的性能进行了分析和研究。实验和测量结果表明,改进后的滤波器在保持原有滤波器性能的基础上,由于引入了分形结构使滤波器的尺寸更加紧凑、有更好的带外抑制能力。仿真和实测结果基本吻合。     

新型Koch岛分形耦合微带线带通滤波器

为抑制平面带通滤波器的二次谐波,实现高选择性和低插入损耗,提出了一种新型Koch岛分形结构,并将其应用到平面耦合微带线带通滤波器的设计中.仿真及测试结果表明:所设计的新型Koch岛分形耦合微带线带通滤波器的中心频率为3 GHz,3 dB通带宽度为10%;与传统的耦合微带线带通滤波器相比,该新型滤波器的二次谐波降低了11...     

高选择性发夹型带通滤波器的设计

微带发夹型带通滤波器具有尺寸小、结构简单、性能稳定等优点,在射频微波领域有着广泛的应用。 本文使用ADS 软件设计仿真了一种高选择性抽头式发夹型带通滤波器。与一般发夹型滤波器相比,该滤波器在输 入输出端并联四分之一波长开路微带线,通过在寄生通带增加传输零点的方法提高滤波器的带外抑制性能。另外, 在该滤波器的谐振单元上增加并联阶跃阻抗枝节,在通带两侧产生一对传输零点,来提高该发夹型带通滤波器的选 择性。最后对这种高选择性发夹型带通滤波器进行实物加工,测试结果证实了该带通滤波器的良好选择性能。     

基于微带贴片谐振器的高选择性双模双通带带通滤波器的研究

本文提出了基于微带贴片谐振器的高选择性双模双通带带通滤波器及一种模式分析算法.首次利用该算法分析了微带贴片的模式组成,计算了导模场的闭式解.微带贴片的耦合馈线同时作为谐振单元构成第二个通带,减小了结构尺寸.全波仿真分析（full wave analysis）结果及测试数据表明,与现有的双模双通带带通滤波器相比,本文设计的滤波器传输零点个数增加了2倍,达到11个,带外抑制度达到20dB,带内插损较小,仅为1.2dB,抑制了寄生通带.同时设计的拓扑结构复杂度较低,利于滤波器的小型化.     

新型微扰结构双模贴片带通滤波器设计

针对微带滤波器高性能小型化的需求,提出了一种方环形微扰单元的双模贴片带通滤波器的设计.该滤波器由方形贴片作为谐振器,输入、输出端口采用直接馈电,具有对称结构.利用在方形贴片上蚀刻出方环形缺口的方式,对方形贴片谐振器进行微扰,实现双模滤波器.通过电磁仿真软件Ansoft HFSS分析了微扰单元的特性,对双模滤波器的性能进...     

新型的平面双模椭圆函数带通滤波器

根据传统的方形贴片双模滤波器,提出了一种新颖的带有两个切角的平面双模带通滤波器结构.该结构使用单个贴片谐振器并且没有耦合缝隙,通带两端各有一个衰减极点,有效减小了滤波器的辐射损耗.对该滤波器结构进行改进,又提出了一种带有两个相互正交、长度不等槽线的双模椭圆函数带通滤波器结构.该滤波器在中心频率1.8GHz处,回波损耗达到31.53 dB,通带内最小插损达到0.01 dB,3 dB相对带宽为19.44%.采用Ansotf公司的En-sem ble 8.0仿真软件进行的仿真研究.仿真结果表明该结构可以更加有效地减小辐射损耗,增加带宽,且体积比传统滤波器减小了约40%,有利于小型化.     

一种多模微带方形贴片带通滤波器的设计

提出了一种多模方式工作的微带方形贴片带通滤波器。通常设计微带方形贴片滤波器主要是利用TM1,0,0和TM0,1,0这一对简并主模实现单模或双模的工作方式。但是这些滤波器尚存一些有待完善的地方,诸如带内插损偏大,带宽受限等等。本文设计的带通滤波器不使用主模,而是利用三个高次模分量,通过一种简单的微扰方式和馈电方式激励起除简并主模以外的三个高次模分量,并使之相互耦合实现通带。仿真和测量结果充分说明,这种滤波器能够实现宽频段的通带响应,并且在通带内具有很低的插损和良好的阻抗匹配特性,能够广泛地适用于微波平面电路。     

基于非谐振节点的基片集成波导滤波器设计

针对微波滤波器小型化和高性能的应用要求,基于非谐振节点技术,提出了一种高选择性的双模基片集成波导带通滤波器。非谐振节点通过带线谐振器实现,可以在源负载之间引入额外的信号传输路径,与传统的双模基片集成波导滤波器相比,该滤波器可以引入额外的传输零点,从而提高滤波器的选择性和带外抑制。此外,带线谐振器嵌入基片集成波导谐振腔的内部,不占据额外的电路面积,使其结构更加紧凑。最后,设计并加工了一款工作频率为28 GHz,相对带宽为1.6%的高选择性带通滤波器。测试结果与仿真结果相一致,表明了所提出设计方法的可行性。     

基于紧凑微带结构的双频带通滤波器设计

基于多频段通信系统的发展需要,利用紧凑微带结构设计了一款新型双频带通滤波器。利用等边三角形贴片谐振结构,并配属与地平面相连的金属过孔,激励出2个不同的谐振峰。基于该新型谐振单元设计的滤波器具备双通带特性,通过引入缺陷地结构(DGS)和微带短枝节线,双频带通滤波器在频率选择性能上得到很大提升。该滤波器工作频段为2.4,5.8 GHz,对应的3 dB带宽为230,920 MHz。测试结果表明,原型滤波器呈现出双频带通特性,且与电磁仿真结果相互印证。     

基于GaAs IPD的小型化高选择性X波段宽带带通滤波器

文中设计并实际开发了一种基于砷化镓(Gallium Arsenide, GaAs)集成无源器件(Integrated Passive Device, IPD)技术的小型化高选择性宽带带通滤波器。首先，所提出的带通滤波器是通过引入集总参数谐振器来设计的，以实现高选择性和宽带性能。其次，进一步研究了实现高选择性和宽带性能的工作原理。最后，为了证明所述性能，基于GaAs-IPD技术设计、制造和测量了一个紧凑型高选择性宽带带通滤波器。该滤波器工作频率覆盖了整个X波段(6～13 GHz),相对带宽为74.0%,带外实现了四个传输零点，从而实现了高选择性和良好的带外性能，芯片尺寸为0.05λ₀×0.03λ₀。比较了实测结果与电磁仿真结果，验证了该设计的可行性。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.