5G卫星通信系统频偏估计算法

卫星通信系统中存在的大的多普勒频偏严重影响着系统的性能.为了提高频偏估计的性能,基于5G NR帧结构和同步信号,提出新的利用级联积分梳状(Cascaded Integrator Comb,CIC)滤波器插值的小数倍频偏估计算法.该算法分两步实现小数倍频偏估计:首先,利用结构简单、运算快速的CIC滤波器对接收主同步序列(...     

LTE-TDD系统中频偏估计算法研究

提出了-种新的适用于LTE-TDD系统的新的频偏估计算法,整数倍频偏估利用PSS自身良好的自相关性,采用滑动相关估计出整数倍频偏;小数倍频偏估计利用PSS共轭相乘的方式得到.     

一种新的OFDM系统载波频偏估计算法

在正交频分复用(OFDM)系统中,频率偏移会破坏子载波间的正交性,降低整个系统的性能。在研究传统频偏估计算法的基础上,利用简单的实数训练序列,进行OFDM系统的载波频偏估计,只需要一个训练序列,就可以有效地在时域内同时对小数倍和整数倍的频率偏移进行估计。仿真结果表明,基于实数训练序列的载波频偏估计算法不仅方法简单,易于实现,而且可提高频偏估计精度。     

CMMB接收机中的载波频偏跟踪估计

CMMB（中国移动多媒体广播）是中国移动多媒体广播的行业标准。文中提出了一种适合于CMMB接收端解调部分的小数倍子载波频偏跟踪估计算法,该算法在CMMB接收端解调系统中首先进行频偏捕获纠正,捕获阶段结束即进入载波跟踪阶段,并在此阶段的频域利用导频来完成小数倍子载波的频偏估计。     

TDD-LTE下行高速移动场景中的频偏估计方法

针对TDD-LTE系统下行链路高速移动场景提出了一种小数倍频偏估计算法,该算法利用主同步信道(P-SCH)和辅同步信道(S-SCH)的频域信道估计值的共轭相关来估计载波频率的小数倍偏移.理论分析与仿真结果表明所提出算法的估计范围能够覆盖高速移动场景中的最大小数倍频偏,同时仿真结果也表明所提算法在加性高斯白噪声信道(AW...     

MIMO-OFDM系统小数倍频偏估计算法研究

由于多输入多输出-正交频分复用(MIMO-OFDM)系统对频偏很敏感,很小的频偏就能引起系统性能的大幅下降.为了提高MIMO-OFDM系统频偏估计的精度和频谱的利用率,采用一种基于新训练序列的小数倍频偏估计算法.该算法利用构造的新训练序列获得比传统算法更精准的频偏估计,可有效地对小数倍频偏进行估计,同时提出的算法减少训练序列的数量,提高系统频谱利用率.仿真结果表明,在加性高斯白噪声信道环境下,所提出的方法在载波频偏估计中能有很好的性能.     

MIM0-OFDM系统小数倍频偏估计算法研究

由于多输入多输出-正交频分复用（MIMO-OFDM）系统对频偏很敏感,很小的频偏就能引起系统性能的大幅下降。为了提高MIMO-OFDM系统频偏估计的精度和频谱的利用率,采用一种基于新训练序列的小数倍频偏估计算法。该算法利用构造的新训练序列获得比传统算法更精准的频偏估计,可有效地对小数倍频偏进行估计,同时提出的算法减少训练序列的数量,提高系统频谱利用率。仿真结果表明,在加性高斯白噪声信道环境下,所提出的方法在载波频偏估计中能有很好的性能。     

适合突发传输的非数据辅助载波频偏估计算法

针对突发条件下线性调制信号的载波频率同步,研究了基于非数据辅助的直接判决引导频偏估计算法和开放环频偏估计方法。研究结果表明,直接判决引导频偏估计算法复杂度较低,适用于对性能要求不高的系统。开放环频偏估计算法计算简单,其复杂度低于直接判决引导频偏估计算法,估计时间短适合突发通信系统。     

改进的16QAM载波频偏估计算法

针对QAM相干光传输系统中载波频偏估计算法存在估计范围小、计算复杂度高的问题,提出一种基于训练符号的FFT频偏估计算法.利用训练符号相位信息消除部分采样信号调制相位,取该部分信号的幅角进行FFT变换,最终得到频偏估计值.消除了原频偏估计算法中除以4的运算,从而扩大了频偏估计范围,同时由于减少了FFT长度进而降低计算复杂度.仿真结果表明,改进后的算法在QAM相干检测系统保持较高精度的频偏估计情况下,其估计范围可以达到±50％符号速率.     

基于前导码的WLAN 802.11b频偏估计算法

本文针对频偏估计算法估值范围与估值精度难以两全的矛盾提出分两步进行的纯数字频偏估计算法.第一步是不需要辅助数据的粗频偏估计,第二步则是基于辅助数据的细频偏估计.理论与仿真结果表明该算法具有估值范围大﹑精度准的优点,并且计算量小,非常适用于高速突发的现代数字通信系统.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.