A Ka-band micromachined low-phase-noise oscillator

A low-phase-noise 28.65 GHz oscillator has been demonstrated using a planar resonator. The resonator is micromachined close to the transistor and has an unloaded Q of 460. The oscillator uses a commercially available high electron mobility transistor (HEMT) for the active device, and results in an output power of 0.6 dBm with a 5.7% DC-RF efficiency. The measured phase noise is -92 dBc/Hz at a 100 kHz offset frequency and -122 dBc/Hz at 1 MHz offset frequency. This is compared with a low-Q planar design showing a 10 dB improvement in phase noise. The micromachined resonator is competitive with other hybrid nonplanar technologies, such as dielectric resonators     

Cavity coupling structure for planar oscillators showing DR-likereflective characteristics

A new cavity coupling structure has been developed for low-phase noise oscillator applications. Unlike the conventional cavity coupling structures that show absorption at the resonant frequency, the new structure shows high reflection at resonance similar to dielectric resonators, making it suitable for the reflective oscillators. The fabricated cavity resonator showed a loaded Q-factor of 1200 and the X-band oscillator using the new resonator showed phase noise proper-ties of -57 and -83 dBc/Hz at 1 and 10 kHz offset, respectively. This is comparable to the best results of dielectric resonator oscillators using HEMTs at this frequency range     

X波段介质振荡器的设计

研究了一种具有较宽机械调频范围和较低相位噪声的x波段介质振荡器设计方法.利用介质谐振器法对三种型号的介质谐振器(DR)材料进行了精确的测试,得到了其介电常数εr和损耗角正切值tanδ以及DR的谐振频率.利用仿真软件建立微带线与谐振器耦合模型,通过仿真提取其S2P文件.选用GaAs FET ATF26884作为电路中的放大器件,使用生成的S2P文件建立介质振荡器(DRO)电路模型,调整耦合段和输出匹配微带线的长度,得到较低的相位噪声.测试证明输出信号的相位噪声在偏离中心频率100 kHz处小于-100 dBc/Hz.     

Parasitic coplanar three-element dielectric resonator antennasubarray

A slot-coupled rectangular dielectric resonator antenna in the parasitic coplanar configuration is investigated experimentally. The measured results for impedance and radiation patterns are presented for the three-element case. It is found that by using suitable choice of the dimensions and offset distance of each dielectric resonator, the impedance bandwidth can be as high as three times that of the single-element structure     

Increased dielectric quality factor in planar resonators byselective dielectric removal

A means for increasing the effective dielectric quality factor by selective removal of dielectric from a microstrip resonator is discussed. Methods for determining the impedance and effective dielectric constant are included. The reduction in loss compared with an equivalent microstrip resonator is presented     

基于CST与ADS的介质谐振振荡器的设计

分析了介质谐振振荡器的起振和稳频的原理,研究了一种低相位噪声的介质谐振振荡器的设计方法。以X波段为例,利用CST Microwave Studio 2010软件仿真了微带线与介质谐振器耦合的模型,将仿真得到的结果导入S2P文件中。再利用Agilent ADS 2011软件仿真介质谐振振荡器的完整电路,采用S参数仿真和谐波仿真分析等方法设计介质谐振振荡器,结合理论分析,调整和修改实验电路的参数值,使模型达到最好的优化结果。最后通过测试验证仿真结果。采用NEC公司的2SC5508芯片作为放大器,得出微波振荡器的输出频率为10.6 GHz,输出功率为5.19 dBm和较低的相位噪声,其在偏离中心频率10 kHz处小于-121 dBc/Hz。     

低相噪锁相介质振荡器研究

针对高的相位噪声指标要求,对取样锁相介质振荡器进行了研究.通过相位噪声分析,明晰了采用介质振荡器与取样锁相技术降低相位噪声的机理,并分别对介质振荡器与锁相环路进行了设计.设计中,应用HFSS与ADS对介质振荡器进行了联合仿真,体现了计算机辅助设计的优势.最终研制出17 GHz锁相介质振荡器,测试结果为:输出功率13.1 dBm;杂波抑制>70 dB;谐波抑制>25 dB; 相位噪声为-105 dBc/Hz@1 kHz,-106 dBc/Hz@10 kHz,-111 dBc/Hz@100 kHz,-129 dBc/Hz@1 MHz.     

A 22-GHz-band low-noise down-converter for satellite broadcastreceivers

A simple low-cost and high-performance 22 GHz band down-converter developed for a direct-to-home satellite broadcasting system is discussed. The down-converter consists of a low-noise high electron mobility transistor (HEMT) preamplifier, an image recovery mixer with a particular structure using dielectric resonator filters, a 21.4 GHz GaAs FET oscillator stabilized by a dielectric resonator, and an IF amplifier. These components are fully integrating using microwave integrated circuit technology into a small size. A total noise figure of less than 2.8 dB is obtained over the 22.5-23.0 GHz frequency range. The local oscillator achieves a frequency variation of less than 600 kHz_p-p over a temperature range of -20° to +60°C     

C频段介质稳频振荡器的设计

分析了C频段介质稳频振荡器的设计和实现过程,讨论了影响介质振荡器性能的因素,采取改善相位噪声的方法,得出了较为满意的测试结果.通过建立物理等效模型,从理论上推导了变容管调谐介质振荡器的最佳耦合微带长度.采用计算机辅助设计,得到了较好的结果.     

一种共面波导结构双模圆环带通滤波器

提出了一种新型的用共面波导馈线结构实现的双模圆环带通滤波器。该滤波器采用传统的圆环作为谐振器,引入阶梯阻抗作为微扰使其简并模式分离并产生耦合。这样的微扰结构我们称之为环形阶跃阻抗谐振器,它与输入/输出共面波导分别设计在介质基片的两个不同的面上。文中给出了该滤波器的结构及通过仿真和实验获得的性能参数,结果表明该滤波器在带宽为11.4%时通带内的最小插损为1.42dB。     

SIS Mixer to HEMT Amplifier Optimum Coupling Network (Short Paper)

The coupling network between a superconductor-insulator-superconductor (SIS) mixer and a high-electron-mobility-transistor (HEMT) amplifier is investigated from the point of view of minimizing the overall noise temperature and also increasing the saturation level of the mixer. The effect of a negative output impedance of the mixer upon the amplifier noise is considered and an optimum negative source resistance is found. The amplifier noise at this optimum negative source resistance is shown to be related to the noise wave coming out of the amplifier input terminals. Key words: SIS, HEMT, low-noise, negative resistance.     

Low phase noise heterojunction bipolar transistor oscillator

A low phase noise, heterojunction bipolar transistor (HBT) oscillator has been designed and fabricated for operation at X-band. The common emitter oscillator employs a high-Q dielectric resonator as the parallel feedback element between the base and collector terminals. Series capacitive feedback is used in the emitter to enhance the oscillator's negative output impedance. Single-sideband FM noise levels of -76 dBc/Hz and -102 dBc/Hz have been achieved at 1 kHz and 10 kHz frequency offsets, respectively, for an 11.06 GHz carrier frequency. This is one of the lowest phase noise levels ever reported for an X-band solid-state transistor oscillator.<>     

基于新颖调谐谐振器的低相噪VCO设计

介绍了一种采用新颖谐振器的低相位噪声窄带压控振荡器(VCO)的设计方法。该谐振器采用源与负载横向交叉耦合结构,形成一个传输零点,提高了谐振器的Q值。该谐振器通过弱耦合与变容二极管连接,从而实现电压控制滤波器通带中心频率调谐。利用该谐振器设计了一个窄带VCO,并在先进设计系统(ADS)软件里仿真验证。该VCO中心频率6.15 GHz,在调谐电压从0到15 V的范围内调谐带宽60 MHz,相位噪声在整个调谐范围内优于-132 dBc/Hz@1MHz,输出功率为8.4 dBm,功率平坦度±0.1 dBm。     

Low phase noise millimeter-wave frequency sources using InP-basedHBT MMIC technology

A family of millimeter-wave sources based on InP heterojunction bipolar transistor (HBT) monolithic microwave/millimeter-wave integrated circuit (MMIC) technology has been developed. These sources include 40-GHz, 46-GHz, 62-GHz MMIC fundamental mode oscillators, and a 95-GHz frequency source module using a 23.8-GHz InP HBT MMIC dielectric resonator oscillator (DRO) in conjunction with a GaAs-based high electron mobility transistor (HEMT) MMIC frequency quadrupler and W-band output amplifiers. Good phase noise performance was achieved due to the low 1/f noise of the InP-based HBT devices. To our knowledge, this is the first demonstration of millimeter-wave sources using InP-based HBT MMIC's     

Microstrip termination effects on dielectric resonator filters

The effect of microstrip termination on the noise figure and insertion loss performance of dielectric resonator filters has been investigated both theoretically and experimentally. Radiation loss from open- and short-circuited dielectric resonator coupling lines has been determined. It is shown that the use of short-circuited coupling lines results in significant improvements in the performance of the filter. The improvement increases as frequency increases.     

Slot-coupled DR antenna for dual-frequency operation

To achieve dual-band operation or wider bandwidth, a new configuration of dielectric resonator antenna is proposed. This structure consists of two rectangular dielectric resonators displaced near two edges of a single slot in the ground plane of a microstrip line. The measured impedance and radiation patterns for two cases are presented. The results for typical examples indicate that an impedance bandwidth twice that of a single element or dual-frequency operation at two separate bands can be achieved     

An 8 GHz high power AlGaN/GaN HEMT VCO

A high power X-band hybrid microwave integrated voltage controlled oscillator(VCO) based on Al-GaN /GaN HEMT is presented.The oscillator design utilizes a common-gate negative resistance structure with open and short-circuit stub microstrip lines as the main resonator for a high Q factor.The VCO operating at 20 V drain bias and-1.9 V gate bias exhibits an output power of 28 dBm at the center frequency of 8.15 GHz with an efficiency of 21%.Phase noise is estimated to be -85 dBc/Hz at 100 kHz offset and -1...     

一个8GHz高功率AlGaN/GaN HEMT VCO

基于中科院微电子所的AlGaN/GaN HEMT工艺研制了一个X波段高功率混合集成压控振荡器（VCO）。电路采用源端调谐的负阻型结构,主谐振腔由开路微带和短路微带并联构成,实现高Q值设计。在偏置条件为VD=20V, VG=-1.9V, ID=150mA时,VCO在中心频率8.15 GHz处输出功率达到28 dBm,效率21%,相位噪声-85 dBc/Hz@100 KHz,-128 dBc/Hz@1 MHz。调谐电压0~5V时,调谐范围50 MHz。分析了器件闪烁噪声对GaN HEMT基振荡器相位噪声性能的主导作用。测试结果显示了AlGaN/GaN HEMT工艺在高功率低噪声微波频率源中的应用前景。     

一种X 波段串联反馈介质振荡器的设计

在毫米波通信系统中,振荡器是最基本的微波频率源。本文介绍了一种串联反馈型介质振荡器的设计方法, 基于负阻理论和谐波平衡法,利用HFSS 和ADS 设计了10.5Ghz 的低相位噪声串联反馈型介质振荡器。HFSS 用来精 确仿真介质谐振器与微带线的耦合;ADS 用来对振荡器非线性仿真,优化相位噪声和输出功率。在设计过程中,采 用低噪声PHEMT 晶体管ATF-34143 作为振荡器的有源器件,高Q 值、高介电常数的介质谐振器作为稳频元件,确 定振荡器的谐振频率。     

V波段介质加载梯形慢波结构研究

研究了V波段介质加载梯形慢波结构。通过在耦合槽和间隙处进行适当介质加载,降低主模的相速,改善色散特性。使用CST对其慢波结构进行仿真,得到色散曲线和耦合阻抗,结果表明介质加载对耦合阻抗的影响很小,但却可以明显地降低相速,同时色散特性也更为平坦。