改进的圆形单极子超宽带天线

为了有效地对圆形单极子超宽带天线进行小型化,在圆形贴片上进行切边和加圆处理,设计了一款尺寸为30 mm×31 mm的改进型圆形单极子天线。该天线印刷在相对介电常数为4.4、厚度为1.6 mm的FR4介质板上,通过改变切边圆和所加圆的尺寸对天线进行优化。实验结果表明,该天线在S11≤–10 d B的工作带宽为3.03~11.55GHz,相对带宽为116.9%。该天线减小了传统圆形单极子天线的尺寸,可应用于超宽带通信系统中。     

新型超宽带微带单极子天线的设计

针对目前已有超宽带微带单极子天线带宽较窄及尺寸较大等缺点,该文设计了一款小型化结构新颖的超宽带微带单极子天线,使用HFSS软件对天线的结构尺寸进行了分析.天线尺寸仅为14 mm×25 mm×0.7 mm,采用中间开正六边形槽的圆形辐射贴片、矩形微带线及缺陷地面结构,实现了良好的超宽带特性.最终仿真结果表明,在频率2.0...     

一种超宽带地板开槽单极子天线的设计

研制了一款超宽带印刷单极子天线。通过在接地板和单极子贴片底部开槽,展宽了天线频带,改善了天线带内特性,提高了天线增益。采用HFSS软件进行仿真,对天线模型参数进行优化,达到最佳设计效果。结果表明,改进后的天线-10 dB阻抗带宽为2.2~14.6 GHz,比原不开槽天线的-10 dB阻抗带宽增加了7.2 GHz。天线实现了小型化超宽带的同时,在整个超宽带匹配频段内,具有良好的驻波和方向图特性,在超宽带设备中有着很好的应用前景。     

一种新型超宽带平面单极天线的设计

提出了一种新型超宽带平面单极子天线。该天线由一个倒置的月牙形金属贴片和一个槽口金属接地板构成,采用微带线对其进行馈电。通过数值仿真和实验测量,该平面结构的单极天线具有超宽带性能,实测天线的-10dB回波损耗的频率覆盖范围为3．2～1．8GHz,相对带宽达115％,阻抗带宽达到3．6倍频。且该天线体积小、结构简单、加工简便,适合应用于短程超宽带通信系统。     

新型共面波导馈电超宽带单极子天线设计

提出了一种新型的超宽带单极子天线,该天线将经典圆形单极子的下半圆用两个倒梯形替代,有效减小了天线的体积,利用电磁场仿真软件Ansoft HFSS对该天线进行了仿真优化。结果表明,该天线的阻抗带宽为2.48~15.23 GHz,覆盖了超宽带通信系统的带宽。该天线在2.48~15.23 GHz带宽内的S11≤–10 d B,VSWR≤2,具有比较稳定的辐射特性,符合超宽带通信系统的要求。     

一种新型UWB平面单极子贴片天线设计

首先提出了一种小型超宽带酒杯形单极子天线结构,采用对接地板做切角处理和辐射贴片的曲流处理,提高了宽频天线性能。通过HFSS数值模拟仿真,该天线主抗带宽为3.08～11.18GHz,覆盖了FCC建议的频段。在整个频段内辐射方向图E面和H面具有良好方向图稳定性,满足了超宽带通信对天线的要求。     

新型超宽带单极子天线的设计

研制了一款超宽带印刷单极子天线,通过在接地板上开方形槽,展宽带宽的同时也改善了带内特性.再在金属贴片顶部开扇形槽,进一步在高频段展宽了频带.实测结果显示,改进后的天线- 10 dB阻抗带宽为2.1 ～25.5 GHz,而原不加槽天线的仿真带宽为2～11.4 GHz,带宽展宽了14 GHz.仿真和实测结果显示,天线在2....     

一种五陷波超宽带天线的设计

为了在所需的多个陷波频带中获得额外的谐振频率,设计了一种具有五陷波特性的超宽带单极子天线,天线包括蚀刻了两个不封闭口字型槽的秤砣形贴片、矩形微带馈电线、缺陷接地板和两个类U形谐振器.将两个类U形谐振器耦合在馈电线附近,与辐射贴片上蚀刻的两个槽及缺陷接地板共同实现五陷波特性.该天线工作带宽为3.01～12 GHz,有效滤...     

超宽带阶梯形微带单极子天线的设计与研究

针对当前已有超宽带(ultra-wideband,UWB)微带单板子天线带宽窄、尺寸大等缺陷,设计了一款小型化UWB阶梯形微带单极子天线,采用开槽的矩形辐射贴片、阶梯形微带馈电线和缺陷地面结构(defected ground structure,DGS)实现良好的UWB特性.对天线的回波损耗、电压驻波比(voltage...     

一种双陷波超宽带单极子天线的设计

提出了一种新型双陷波特性的超宽带单极子天线。通过在介质基板上添加锥形辐射贴片,天线可以覆盖超宽带通信频段。在辐射贴片上引入上、下两个锥形缝隙结构,可以实现3.5 GHz、5.5 GHz的双陷波特性。天线实测模型电压驻波比＜2的阻抗带宽是2.56~10.61 GHz,其中3.18~3.76 GHz和4.4~5.75 GHz具有陷波特性。测试表明,天线在工作频带内具有全向辐射特性。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.