焊接领域发展的新动向——太阳能应用中的焊接及表面工程

阐述了太阳能工业应用的简况,重点介绍了各太阳能电池和太阳能集热器及供热装置中的焊接及表面工程技术,包括:硅太阳能电池的生产链、太阳能电池生产工艺、薄膜太阳能电池、聚光光伏太阳能电池、太阳能集热器及供热装置中的焊接及表面工程技术,最后讨论了几种用于太阳能焊接的可能性。     

太阳能电池硅转换材料现状及发展趋势

目前太阳能电池工业转换材料绝大多数都采用硅，而硅材料主要来自于半导体工业的废料。作为硅集成电路和器件用的多晶硅原料的生产普遍采用西门子法。随着光伏产业的迅速发展，来自半导体级硅的废料预计不会明显增加。因此，将不能满足太阳能电池用硅的需求，硅原料已经成为光伏产业发展的最主要的瓶颈之一。为了满足太阳能电池工业健康发展。研究开发一个不依赖于半导体硅生产的低成本太阳能级硅供应体系是非常必要的。     

太阳能电池用多晶硅铸造技术研究进展

高性价比优势使多晶硅成为光伏市场的主要材料.随着太阳能电池向低成本化方向的发展,太阳能电池用多晶硅铸造技术的研究与开发有着重要的意义.综述了目前太阳能电池用多晶硅锭、多晶硅带和多晶硅薄膜的铸造技术的起源、原理、优点和缺点,以及采用不同铸造方法制备的硅组织特点,评述了新的太阳能电池用多晶硅的铸造方法,展望了新的铸造太阳能级多晶硅新技术.     

GaAs/Ge太阳能电池用锗单晶的研究新进展

硅太阳能电池由于光电转换效率低和温度特性差等因素,最近几十年其在聚光光伏技术中并没有得到更大的发展,而砷化镓及相关Ⅲ-Ⅴ族化合物太阳能电池因其高光电转换效率而越来越受到关注,尤其是用于空间电源。目前国内外对太阳能电池的的研究主要集中在以锗晶片作基板的多结高效GaAs/Ge太阳能电池上,本文主要介绍了GaAs/Ge太阳能电池用锗单晶目前国内外的研究新进展,并对高效率太阳能电池用锗晶片的发展进行了展望。     

单晶硅太阳能电池硅与电极间的欧姆接触

通过样品横断面金相观察,TG－DTA及X－射线衍射分析,证明单晶硅与银浆、铝浆（银铝浆）在烧结过程中形成合金,消除硅与电极间的肖特基势垒,使电极与硅形成欧姆接触。     

钙钛矿太阳能电池研究新进展

钙钛矿太阳能电池自2009年首次被提出以来展示了迅猛的发展势头,其发展速度远超硅基太阳能电池。截至目前,钙钛矿太阳能电池光电转换效率已经达到23.6%,是未来最具产业化应用潜力的新一代太阳能电池。本文主要介绍了有机金属卤化物钙钛矿的基本结构、电池构造及发展历程,分析了一步溶液法、两步溶液法、双源气相蒸发法及溶液-气相沉积法四种常用钙钛矿薄膜制备方法的原理和优缺点。最后指出钙钛矿太阳能电池技术进一步突破的障碍所在,明确了未来钙钛矿太阳能电池研究目标,为钙钛矿太阳能电池产业化指明方向。     

中国太阳能薄膜电池开始参与全球角逐

正近年薄膜太阳能电池发展迅速,以铜铟镓硒(CIGS)和碲化镉(CdTe)为代表的薄膜太阳能电池的发展速度最为突出,特别是美国、日本、德国等,长期保持着技术优势,但随着我国国内企业的不断发展,国产率水平的不断提高,我国自主研发生产的薄膜太阳能电池逐渐实现赶超。21世纪初之前,太阳能电池主要以硅系太阳能电池为主,超过89%的光伏市场由硅系列太阳能电池所占领,但自2003年以来,晶体硅太阳能电池的主要原料多晶硅价格快速上涨,因此,     

酸浸出法提纯工业硅

引言作为太阳能电池或电子科学应用的纯硅,现在是用高成本的方法还原由工业硅制备的纯卤硅烷来生产的。近些年来。探索可采用的硅的提纯方法,特别是纯度要求低于电子学应用的太阳能级硅的提纯方法,颇引人注目。在已     

世界第一例铜电镀硅异质结太阳能电池诞生

第21届国际光伏科学与工程会议于2011年11月28日至12月2日在日本福冈召开。日本钟渊（Kaneka）和比利时徽电子研究中心（IMEC）在会中展示了非银浆硅基异质结太阳能电池。Kaneka在IMEC现有铜电镀技术的基础上，通过应用此技术成功研发出高效铜电镀硅基异质结太阳能电池。     

纤维过滤网过滤铝硅合金净化效果的试验

本文介绍了用耐高温纤维过滤网过滤铝硅合金的净化效果。通过对过滤的和未过滤的铝硅合金的化学成分、机械性能、金相组织及密度等的评价提出了用耐高温纤维过滤网过滤铝硅合金的可能性及其应用前景。     

太阳能电池正极用银浆的研究及进展

综述了太阳能电池正极用银浆的制备工艺及各组分含量对银浆性能影响的研究现状.指出了太阳能电池用银浆的用途及其应用前景.     

乙基纤维素和聚酰胺蜡在晶硅太阳电池电极材料中的应用

通过分析乙基纤维素和聚酰胺蜡在不同溶剂和载体中的粘度及触变性能的作用规律,以研究其对太阳电池正银浆料的丝印特性和电池电极形貌、致密度及电学性能等的关系。发现乙基纤维素和聚酰胺蜡在溶剂中对溶液的粘度分别起到了不同的作用,从而影响着正银浆料的触变和流变性能。其中,乙基纤维素在溶液中的主要作用是提高浆料的整体粘度,而聚酰胺蜡在溶液中主要起着增强浆料剪切变稀的能力。由于浆料的丝印特性主要是通过调节浆料的触变性能来优化的。因此,乙基纤维素和聚酰胺蜡在浆料中的比例对浆料的丝印特性起着十分关键的作用。通过对比乙基纤维素和聚酰胺蜡在浆料中的不同比例对其触变性能及对电池正面电极形貌、致密度和电阻率的影响。结果表明,当乙基纤维素与聚酰胺蜡在浆料中的比例为1:5时,电池栅线电极的高宽比达到最大值,同时栅线电极的线电阻也达到最小值,因此正银浆料达到一个较好的印刷性能。     

Effects of rapid thermal process on the junction properties of aluminum rear emitter solar cells

N-type silicon with aluminum emitters for rear junctions was studied; aluminum back surface fields were replaced with n-type silicon wafers. Aluminum rear emitters for n-type silicon solar cells were studied with various rapid thermal processing conditions. With fast ramping-up and fast cooling, an aluminum rear junction was formed uniformly with low emitter recombination current. The effects of junction quality on solar cell efficiency were investigated.     

异质结太阳能电池金属化技术研究进展

异质结太阳能电池具有光电转换效率高的优势,在光伏发电领域展现出了较大的发展潜力。低温金属化是制造异质结太阳能电池的一个重要工艺环节,用于在电池片上形成金属栅线电极,当前普遍采用低温固化型银浆结合丝网印刷来实现。然而,现有的低温银浆用量大、价格贵是导致电池成本较高的原因之一。因此,光伏行业正致力于改进和优化金属化工艺来降低银耗。本文综述了近年来异质结太阳能电池金属化技术的研究进展,详细总结了低温银浆各组分及固化工艺对浆料性能的影响,同时对金属化工艺降本增效的主要途径,包括银浆减量化方案例如多主栅、激光转印技术等,以及非银电极方案例如银包铜、铜电镀技术等,进行了介绍和对比,并对金属化工艺当前存在的挑战及未来发展方向进行了分析和展望。     

晶体硅太阳能电池正面银浆的作用机制

正面银浆由银粉、玻璃成分和粘合剂等组成,根据硅光伏电池的电阻构成、正面银浆各组分的特性对烧结时银浆料与硅基体的物理化学变化进行了分析。正面银浆选用密度高的球形银粉,Pb-Te系玻璃,烧结后栅线有足够大的高宽比,增加线条横截面积,使细栅线体电阻(Rf)达到最小值;烧结时还原生成铅和碲单质及其化合物,与硅基体形成共晶导电夹层,使前接触电阻(Rfc)达到最小值;硅太阳能电池的串联电阻(Rs)变小了,光电转换效率就得到提高。     

一种太阳能高效多晶硅铸锭用坩埚底部引晶涂层的制备方法

介绍一种太阳能电池用高效多晶硅片生产过程中,铸锭用坩埚底部引晶涂层的制备方法。此方法是在坩埚底部分别制备两个涂层:第一层是硅粉和无机陶瓷胶的混合物,第二层是氮化硅粉和无机硅溶胶、去离子水的混合物。此方法的创新点是将硅粉替代传统的石英砂作为引晶晶核来制作引晶层。结果表明,与传统石英砂引晶层相比,此方法产生的多晶硅锭晶体均匀、位错少,制成的太阳能电池转换效率高(平均达到17.8%)。     

Thermodynamics of solar-grade-silicon refining

Solar energy will shortly be in great demand since it is inexhaustible and cleaner than any conventional energy resources. At present, an expensive grade of silicon for semiconductor (SEG-Si) is used for a solar cell to convert solar energy into electricity. However, the amount of supply is limited and we have to develop an innovative process for silicon production with low energy cost in order to spread the solar cell system widely. Using relatively inexpensive metallurgical grade silicon (MG-Si) as a starting material for making solar grade silicon (SOG-Si) is believed to be one of the ways to make solar cells less expensive. Impurities in MG-Si will shorten the lifetime of excited carriers in silicon solar cell and disturb electric generation. Hence, the removal of impurities from silicon is a significant issue in silicon solar cell fabrication. To discuss the possibility and efficiency of the impurity elimination process, evaluation of thermodynamic properties of impurities in molten silicon such as the activity coefficients and the interaction parameters of harmful impurities has been performed.     

Experimental and simulation study for ultrathin (∼100 μm) mono crystalline silicon solar cell with 156×156 mm2 area

A reduction in silicon material consumption in the photovoltaic industry is required for cost reduction. Using crystalline silicon wafers of less than 120 microns of thickness is a promising way for cost and material reduction in the solar cell production. The standard thickness of crystalline silicon solar cells is currently around 180 microns. If the wafers are thinner than 100 microns in the silicon solar cells, the amount of silicon will be reduced by almost half, which should result in prominent cost reduction. With this aim, many groups have worked with thin crystalline silicon wafers. However, most of them have studied with small size substrates. In this paper, we present the electrical characteristics for thin single crystalline silicon solar cells of 100 and 115 μm thickness and 156×156 mm² area manufactured through a conventional process. We have achieved 17.2% conversion efficiency with a 115 μm silicon substrate and 16.8% with a 100 μm substrate. This enables the commercialization of the thin crystalline silicon solar cells with high conversion efficiency. We also suggest issues to be solved in thin crystalline silicon solar cell manufacturing.     

Aluminum fire-through with different types of the rear passivation layers in crystalline silicon solar cells

Aluminum penetration during dielectric layer annealing on silicon was studied for solar cell application. The thickness and uniformity of the aluminum-doped region was examined in variously annealed dielectric layers. Three types of silicon wafers were used with (1) bare Si, (2) SiO₂ layer (80 nm)/Si, and (3) SiN_X layer (80 nm)/Si. Local metal contacts were made through laser-drilled holes, and annealing was tested at four different temperatures. Reactions between aluminum and silicon were observed by cross-sectional scanning electron microscopy. Reactions occurred at 660 °C on bare Si and at ca. 690 °C on the SiO₂ layer. However, the SiO₂ did not withstand annealing at higher temperatures. The SiN_X layer showed no Al-BSF region in samples annealed at up to 760 °C, making it a suitable material for rear passivation layers in local contact Si solar cells. A Si solar cell fabricated by laser drilling and screen printing showed an efficiency of 12.41% without optimization.     

Effect of annealing on the structure of polycrystalline silicon

The photoelectric method of converting solar energy is a promising and environmentally safe way of producing electric power. Sunlight can be converted into electric power by means of solar cells. The present paper concerns a study of polycrystalline silicon plates for the production of solar cells in the initial state and after heat treatment. Translated from Metallovedenie i Termicheskaya Obrabotka Metallov, No. 10, pp. 15–17, October, 1998.