CAN控制器MCP2510及其应用

MCP2510是MT公司生产的一种带SPI接口的CAN控制器,主要用于简化CAN接口的应用设计。文中介绍了MCP2510的特点、结构和基本工作原理,给出了其应用接口电路及SPI接口协议的软件实现方法。     

基于MCP2515的CAN总线通信单元设计

CAN总线接口芯片MCP2515采用SPI接口,具有体积小、低功耗、功能完善、使用方便等特点。为了实现基于该接口芯片的CAN总线通信单元设计,采用DSP+FPGA架构,在FPGA内部实现SPI接口逻辑和MCP2515指令转换逻辑,以完成不同的SPI指令,在DSP中接收上位机指令和完成对MCP2515的控制。实际测试结果表明,该通信单元设计合理,运行稳定,满足了实际需求。     

基于SPI的CAN总线控制器与MCS-51单片机的接口设计

本文提出了一种基于SPI的cAN总线控制器与MCS-51单片机接口的智能节点设计方案.单片机通过模拟SPI接口实现对MCP2510的控制,从而实现CAN总线的通信.     

嵌入式ARM9200与MCP2510的通信

介绍了ATMEL公司AT91ARM9200和美国微芯科技公司的CAN(控制器局域网)控制器MCP2510芯片的结构和功能,重点介绍AT91ARM9200与MCP2510的SPI(串行外设接口)连接,阐述AT91ARM9200和MCP2510的初始化过程以及简单的通信过程。     

CAN总线接口扩展设计与驱动开发

介绍了一种基于S3C6410的CAN总线接口扩展方案,通过SPI接口对CAN接口进行扩展,并给出具体的硬件电路。重点研究了WINCE系统下独立CAN控制器MCP2515的驱动程序。结合CAN总线技术规范和MCP2515的特点设计了相关的软件代码,编写了CAN流接口驱动程序,实验结果表明,在WINCE系统下能够较好实现CAN总线的通信。     

嵌入式系统

新型独立CAN解决方案的升级器件 Microchip Technology(美国微芯科技)发布一款先进的独立CAN器件,为客户应对串行通信带来的挑战提供了全新选择。 MCP2515向设计人员提供了一款具有快速数据传输、高效数据字节过滤和生成帧起始输出功能的CAN解决方案。它的SPI接口可轻松与任何单片机联接。 MCP2515的最大时钟输入速度为40MHz,并具有一个10MHz的高速SPI接口。新器件具有更快的传输功能,可较原     

CAN智能节点的设计

CAN总线是一种流行的实时性现场总线 ,文中提出了一种基于MSP430单片机 ,并以MCP2510为CAN控制器的智能节点设计方案 ,该方案利用MSP430通过标准SPI接口可实现对MCP2510的控制 ,并能够完全实现CAN总线规范。     

基于MCP2515的CAN总线扩展

随着数字信号处理器TMS320F2812的广泛应用,扩展TMS320F2812的CAN总线接口成为一种趋势。针对本公司某测试设备的整体设计要求,利用具有SPI接口的独立CAN控制器MCP2515通过TMS320F2812的SPI接口,实现TMS320F2812的CAN总线扩展,满足了该测试设备的控制精度、处理速度以及对外双冗余CAN总线接口的设计要求,具有较强的工程实用价值。     

12-Bit ADC MCP3201及其接口实现

MCP3201是Microchip公司生产的12位分辨率模数转换芯片,可以借助兼容SPI的简单串行接口进行通讯,具有高性能、低价格、高速度、低功耗的优点,适用于传感器接口、数据采集、过程控制及电池供电系统等诸多场合。介绍了MCP3201的基本特性、引脚功能及工作时序,提供硬件接口的设计范例,并给出基于C语言的实用的具体程序。     

单片机软件模拟SPI接口的解决方案

SPI接口是一种同步串行通讯接口，具备SPI接口的外围芯片十分丰富，应用非常广泛。但是，具备SPI接口的单片机种类较少。介绍了一种基于单片机的模拟SPI接口的方法，使没有SPI接口的单片机扩展带有SPI接口的外围芯片成为现实。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.