Dependence of Threshold Voltage of a-Si:H TFT on a-SiN_x:H Film

ＤｅｐｅｎｄｅｎｃｅｏｆＴｈｒｅｓｈｏｌｄＶｏｌｔａｇｅｏｆａ－Ｓｉ：ＨＴＦＴｏｎａ－ＳｉＮｘ：ＨＦｉｌｍ①ＸＩＯＮＧＺｈｉｂｉｎ，ＷＡＮＧＣｈａｎｇ’ａｎ，ＸＵＺｈｏｎｇｙａｎｇ，ＺＯＵＸｕｅｍｅｉ，ＺＨＡＯＢｏｆａｎｇ，ＤＡＩＹｏｎｇｂｉｎｇ，Ｗ...     

Group Theory Approach for the Stimulated Raman Scattering in Fiber

ＧｒｏｕｐＴｈｅｏｒｙＡｐｐｒｏａｃｈｆｏｒｔｈｅＳｔｉｍｕｌａｔｅｄＲａｍａｎＳｃａｔｔｅｒｉｎｇｉｎＦｉｂｅｒＹａｎｇＢｏｊｕｎＡＮＤＧｕｏＷａｎｗｅｎ（ＤｅｐａｒｔｍｅｎｔｏｆＢａｓｉｃＳｃｉｅｎｃｅｓ，ＢｅｉｊｉｎｇＵｎｉｖｅｒｓｉｔｙｏｆＰ...     

THE OUTPUT OPTICAL FIELD INTENSITY DISTRIBUTION FORMED BY AN OPTICAL FIBER END

ＴＨＥＯＵＴＰＵＴＯＰＴＩＣＡＬＦＩＥＬＤＩＮＴＥＮＳＩＴＹＤＩＳＴＲＩＢＵＴＩＯＮＦＯＲＭＥＤＢＹＡＮＯＰＴＩＣＡＬＦＩＢＥＲＥＮＤ￥ＹＵＡＮＬｉ－Ｂｏ（Ｄｅｐａｒｔｍｅｎｔｏｆｐｈｙｓｉｃｓ，ＨａｒｂｉｎＥｎｇｉｎｅｅｒｉｎｇＵｎｉｖｅｒｓｉｔｙ...     

OPTICAL FIBER-MOBILE COMMUNICATION

ＯＰＴＩＣＡＬＦＩＢＥＲ－ＭＯＢＩＬＥＣＯＭＭＵＮＩＣＡＴＩＯＮ￥ＦＥＮＧＸｉ－Ｙｕ；ＳＵＮＴｉｅ－Ｃｈｅｎｇ（ＤａｌｉａｎＵｎｉｖｅｒｓｉｔｙｏｆＴｅｃｈｎｏｌｏｇｙＤａｌｉａｎ１１６０２３）Ａｂｓｔｒａｃｔ：Ｔｈｅｔｅｃｈｎｉｑｕｅｏｆｍｏｂｉｌ...     

Electron Mobility in Tris(8-Hydroxyquinolinolato) Aluminum Thin Film Based on Silicium

ＥｌｅｃｔｒｏｎＭｏｂｉｌｉｔｙｉｎＴｒｉｓ（８－Ｈｙｄｒｏｘｙｑｕｉｎｏｌｉｎｏｌａｔｏ）ＡｌｕｍｉｎｕｍＴｈｉｎＦｉｌｍＢａｓｅｄｏｎＳｉｌｉｃｉｕｍ①②ＣＨＥＮＢａｉｊｕｎ，ＬＩＵＳｈｉｙｏｎｇ（ＳｔａｔｅＫｅｙＬａｂ．ｏｎＩｎｔｅｇｒａｔｅｄ...     

Hole Mobility in Poly (N-vinylcarbazole) Thin Film Based on Silicium

ＨｏｌｅＭｏｂｉｌｉｔｙｉｎＰｏｌｙ（Ｎ－ｖｉｎｙｌｃａｒｂａｚｏｌｅ）ＴｈｉｎＦｉｌｍＢａｓｅｄｏｎＳｉｌｉｃｉｕｍ①②ＣＨＥＮＢａｉｊｕｎ，ＷＡＮＧＸｉａｏｗｅｉ③，ＬＩＵＳｈｉｙｏｎｇ（ＳｔａｔｅＫｅｙＬａｂ．ｏｎＩｎｔｅｇｒａｔｅｄＯｐｔｏｅ...     

Electroluminescent Excitation Mechanism of Erbium－activated Zinc Sulfide Semiconductor Thin Film Devices

ＥｌｅｃｔｒｏｌｕｍｉｎｅｓｃｅｎｔＥｘｃｉｔａｔｉｏｎＭｅｃｈａｎｉｓｍｏｆＥｒｂｉｕｍ－ａｃｔｉｖａｔｅｄＺｉｎｃＳｕｌｆｉｄｅＳｅｍｉｃｏｎｄｕｃｔｏｒＴｈｉｎＦｉｌｍＤｅｖｉｃｅｓ￥ＬＩＵＺｈａｏｈｏｎｇ；ＷＡＮＧＹｕｊｉａｎｇ；ＣＨＥＮＺｈ...     

Preparation of Organic Semiconductor PTCDA and Studies on Its Crystal Structure and the Absorption Spectrum

ＰｒｅｐａｒａｔｉｏｎｏｆＯｒｇａｎｉｃＳｅｍｉｃｏｎｄｕｃｔｏｒＰＴＣＤＡａｎｄＳｔｕｄｉｅｓｏｎＩｔｓＣｒｙｓｔａｌＳｔｒｕｃｔｕｒｅａｎｄｔｈｅＡｂｓｏｒｐｔｉｏｎＳｐｅｃｔｒｕｍ①②ＺＨＡＮＧＦｕｊｉａ，ＳＨＡＯＪｉａｆｅｎｇ，ＺＨＡＮＧＤｅ...     

Fiber-optic Temperature Sensor with Variable-sensitivity

Ｆｉｂｅｒ－ｏｐｔｉｃＴｅｍｐｅｒａｔｕｒｅＳｅｎｓｏｒｗｉｔｈＶａｒｉａｂｌｅ－ｓｅｎｓｉｔｉｖｉｔｙ￥ＹＵＡＮＬｉ－Ｂｏ；ＰＡＮＪｉａｎ（ＤｅｐａｒｔｍｅｎｔｏｆＰｈｙｓｉｃｓ，ＨａｒｂｉｎＳｈｉｐｂｕｉｌｄｉｎｇＥｎｇｉｎｅｅｒｉｎｇＩｎｓｔｉ...     

Fabrication of Organic/Polymeric Superlattice Structure and Its Use for Electroluminescent Device

ＦａｂｒｉｃａｔｉｏｎｏｆＯｒｇａｎｉｃ／ＰｏｌｙｍｅｒｉｃＳｕｐｅｒｌａｔｉｃｅＳｔｒｕｃｔｕｒｅａｎｄＩｔｓＵｓｅｆｏｒＥｌｅｃｔｒｏｌｕｍｉｎｅｓｃｅｎｔＤｅｖｉｃｅ①②ＣＨＥＮＢａｉｊｕｎ，ＨＯＵＪｉｎｇｙｉｎｇ，ＨＵＡＮＧＪｉｎｇｓｏｎｇ，...     

反应溅射WSi＿xN＿y薄膜的特性

对ＷＳｉ＿ｘＮ＿ｙ薄膜的制备工艺以及Ｎ＿２分压对ＷＳｉ＿ｘＮ＿ｙ膜的组分、结构、应力、电阻率等方面的影响作了分析研究。尝试性地对淀积完毕真空室中充Ｎ＿２造成靶面氮化的情况作了实验分析。ＡＥＳ测试了膜的组分，ＸＲＤ分析了膜的结构，四探针法测得膜的电阻率。     

低温PECVD法形成纳米级介质膜微观结构研究

采用俄歇电子能谱 ( AES)和傅里叶红外光谱 ( FTIR)分析低温 PECVD法形成纳米级 Si Ox Ny 介质膜的微观组分结构及其与制膜工艺间关系 ,通过椭圆偏振技术测试该薄膜的物理光学性能。研究结果表明 :该介质膜中氮、氧等元素均匀分布 ,界面处元素含量变化激烈 ;高、低反应气压变化对膜内微观组分影响有异 ;该薄膜是既含有类似 Si3N4 、又含有类似 Si O2 的非晶状态 ,呈现无序网络结构 ;随着含氮量或含氧量的增多 ,该膜分别向Si3N4 或 Si O2 成分较多的结构转化 ;优化制膜工艺形成的富氮 Si Ox Ny 膜的性能与结构方面得到提高。     

PECVD Si_xO_yN_z膜及其在GaAs VHSIC中的应用

采用SiH_4,N_2O和NH_3反应气体生长了Si_xO_yN_z膜,其特性取决于反应气体流量、射频功率、反应室压力和衬底温度。用折射率为1.71的Si_xO_yN_z做GaAs注Si~+包封退火膜,它比SiO_2或Si_3N_4有更高的电激活。该膜作为互连隔离介质已用于GaAs高速电压比较器。实验结果表明:Si_xO_yN_z是一种有希望的介质膜。     

GaAs MMIC的MIM电容Si3N4介质的TDDB评价

运用TDDB理论,研究分析了G aA s MM IC的M IM氮化硅电容的导电特性和击穿特性,设计制作了三种对比分析的G aA s MM IC的M IM氮化硅电容结构,通过不同斜率的斜坡电压对氮化硅介质进行了可靠性评价,S i3N4M IM电容的可靠性与其面积和周长密切相关,介质缺陷是导致电容失效的主要因素。通过不同斜率的斜坡电压获得电场加速因子(γ)预计了10 V工作电压下的S i3N4介质层的寿命。     

电离辐射对Si_3N_4/SiO_2/Si双界面系统的作用

采用氩离子刻蚀XPS(X光激发电子能谱)分析对S i3N4/S iO2/S i双界面系统进行了电离辐照剖面分析。实验结果表明:电离辐照能将S iO2和S i构成的界面区中心向S i3N4/S iO2界面方向推移,同时S iO2/S i界面区亦被电离辐照展宽。在同样偏置电场中辐照,随着辐照剂量的增加电离辐照相当程度地减少位于S iO2/S i界面区S i3N4态(结合能B.E.101.8 eV)S i的浓度。同时辐照中所施偏置电场对S iO2/S i界面区S i3N4态键断开有显著作用。文中就实验现象的机制进行了初步探讨。     

离子束增强沉积氮化硅薄膜生长及其性能研究

用离子束增强沉积技术合成了氮化硅薄膜并研究了薄膜的组分、性能和结构.结果表明,离子束增强沉积生长的氮化硅薄膜的组分比,可借助于调节氮离子和硅原子到达率之比加以控制.在合适条件下生长的氮化硅薄膜,其红外吸收特征峰在波数为840cm~(-1)附近,光折射率在2.2到2.6之间,其组分为Si_3N_4用RBS、AES、TEM、SEM、ED及扩展电阻,测量和观察生成的氮化硅薄膜的组分深度分布及结构.发现,离子束增强沉积制备的氮化硅薄膜,存在着表面富硅层、氮化硅沉积层及混合过渡层这样的多层结构.薄膜呈球状或方块状堆积.基本上是无定形相,但局部可观察到单晶相的存在.离子束增强沉积制备的氮化硅薄膜中的含氧量比不用离子束辅助沉积的显著减少.     

脉冲磁控溅射制备树脂镜片红外防护功能薄膜

选取氮化硅和二氧化硅作为薄膜材料,借助膜系设计软件对膜系结构进行优化,采用中频脉冲磁控溅射技术进行薄膜制备.利用高反膜透射曲线拟合方法调整薄膜的实际沉积速率,减少膜厚控制误差,在树脂镜片CR39基底的凸面和凹面上分别镀制了符合设计要求的红外防护膜和可见光减反膜.镀膜后树脂镜片在420-680 nm的平均透过率大于95%...     

新型低驱动电压电子纸显示单元的研究

研制了一种基于介质上电润湿(electrowetting-on-dielectric,EWOD)的新型低驱动电压电子纸反射式显示单元器件.本文分析了器件的工作原理以及性能影响因素,并提出用优化的氮化硅与碳氟聚合物复合介质层来改善器件的驱动电压.实验证实,器件在15V低电压驱动下成功实现了"开启"、"关闭"功能,其"开启"、"关闭"响应时间小于1/30s.     

Fabrication and Simulation of Silicon-on-Insulator Structure with Si3N4 as a Buried Insulator

In order to minimize the self-heating effect of the classic SOI devices,SOI structures with Si3N4 film as a buried insulator (SOSN) are successfully formed using epitaxial layer transfer technology for the first time.The new SOI structures are investigated with high-resolution cross-sectional transmission electron microscopy and spreading resistance profile.Experiment results show that the buried Si3N4 layer is amorphous and the new SOI material has good structural and electrical properties.The output current characteristics and temperature distribution are simulated and compared to those of standard SOI MOSFETs.Furthermore,the channel temperature and negative differential resistance are reduced during high-temperature operation,suggesting that SOSN can effectively mitigate the self-heating penalty.The new SOI device has been verified in two-dimensional device simulation and indicated that the new structures can reduce device self-heating and increase drain current of the SOI MOSFET.     

Design and fabrication of a MEMS Lamb wave device based on ZnO thin film

This paper presents the design and fabrication of a Lamb wave device based on ZnO piezoelectric film. The Lamb waves were respectively launched and received by both Al interdigital transducers.In order to reduce the stress of the thin membrane,the ZnO/Al/LTO/Si₃N₄/Si multilayered thin plate was designed and fabricated.A novel method to obtain the piezoelectric constant of the ZnO film was used.The experimental results for characterizing the wave propagation modes and their frequencies of the Lamb wave device indicated that the measured center frequency of antisymmetric A₀ and symmetric S₀ modes Lamb wave agree with the theoretical predictions.The mass sensitivity of the MEMS Lamb wave device was also characterized for gravimetric sensing application.