SiGe HBT技术进展

首先论述了ＳｉＧｅ技术的优势、发展历史和应用领域，并介绍了ＳｉＧｅ工艺和器件的进展，最后详细描述了ＳｉＧｅ ＩＣ的进展。     

SiGe HBT技术进展

首先论述了 Si Ge技术的优势、发展历史和应用领域 ,并介绍了 Si Ge工艺和器件的进展 ,最后详细描述了 Si Ge IC的进展     

SiGe HBT器件的可靠性技术

介绍了SiGe异质结双极晶体管的特点,对SiGe异质结双极晶体管的物理机理进行了讨论,进而分析了影响其可靠性的各种可能因素,总结了目前SiGe HBT可靠性加速寿命试验方法,并进行了比较。     

微波HBT建模技术研究综述

本文对微波异质结双极型晶体管(HBT)发展及其应用现状、用于HBT器件的等效电路模型,以及HBT器件大、小信号建模技术、模型参数提取方法及研究进展进行述评.     

毫米波HBT

<正>日本松下电气公司的K.OGAWA和Y.OTA等在1990年12月的《EL》杂志上报道了毫米波HBT的制作和特性.这种AIGaAs/GaAs HBT是在未掺杂半绝缘衬底上生长外延层基区,其厚度为70nm.如此薄的基区是为了减小电子基区渡越时间.发射区尺寸为1×10μm,用单掩膜多次目对准工艺制成.其工艺特点是有小的埋层集电极、n~+-GaInAs发射极帽层和     

SiGe HBT逻辑电路抗辐射设计加固技术

微电子抗辐射设计加固(Radiation Hardening By Design,RHBD)是指在电路设计中采用特殊版图或电路结构达到抗辐射电路的性能要求,且该电路应能使用标准商用生产线的工艺技术进行制造.论述了几种采用SiGe异质结双极晶体管(HBT)的逻辑电路设计加固技术.     

HEMT－HBT单片集成技术

简要介绍了ＨＥＭＴ－ＨＢＴ单片集成技术，并对目前用选择ＭＢＥ和ＨＥＭＴ－ＨＢＴ综合工艺制作的ＨＥＭＴ、ＨＢＴ器件和ＨＥＭＴ－ＨＢＴ，放大器性能进行了评述。     

HEMT—HBT单片集成技术

简要介绍了ＨＥＭＴ－ＨＢＴ单片集成技术，并对目前用选择ＭＢＥ和ＨＥＭＴ－ＨＢＴ综合工艺制作的ＨＥＭＴ、ＨＢＴ器件和ＨＥＭＴ－ＨＢＴ，放大器性能进行了评述。     

多功能射频综合一体化技术的研究

多功能射频综合一体化技术就是利用一个共用的电子信息平台,将雷达、通信及电子战等多种功能集成在一起。在舰载、机载、星载等要求体积、重量、功耗的电子信息设备中,多功能射频综合一体化技术已经成为一种发展趋势,用户越来越迫切希望在一部设备上就能同时实现雷达、通信及电子战等设备的功能,同时完成各种不同的任务。文中对多功能射频综合一体化技术的体系架构进行了分析,重点阐述了该技术在数字式接收机子系统方面的性能和设计,提出了在同一硬件平台上将雷达、通信、电子战等多种功能集成在一起的技术途径。     

一种多功能抗干扰雷达系统

对一种多功能抗干扰搜索雷达系统作了详细的理论分析并介绍了系统组成和试验情况.     

SiGe/Si异质结双极晶体管工艺技术研究

介绍了多晶硅发射极双台面SiGe/Si异质结双极晶体管制作工艺流程。通过对LPCVD在n型Si衬底上外延生长SiGe合金层作为异质结双极晶体管基区、自中止腐蚀工艺制作发射区台面、多晶硅n型杂质掺杂工艺制作发射极、PtSi金属硅化物制作器件欧姆接触等工艺技术进行研究,探索出关键工艺的控制方法,并对采用以上工艺技术制作的多晶硅发射极双台面SiGe/Si异质结双极晶体管进行了I-V特性及频率特性测试。结果显示该器件饱和压降小,欧姆接触良好,直流电流放大倍数β随Ic变化不大,截止频率最高达到11.2 GHz。     

一种砷化镓HBT高速预分频器的设计

介绍了一种采用砷化镓HBT工艺实现的数字静态除8高速预分频器。该预分频器采用D触发器高速分频和多级供电驱动电路结构。测试结果表明,最高工作频率达到18GHz。预分频器芯片在5V的电源电压下的静态电流为85mA。     

利用EPON技术实现HFC双向多功能业务的接入

本文在对现有HFC网络及EPON技术的研究和比较的基础上,根据两种网络的共性,提出了几种适合现有单向HFC网进行双向网络改造的技术方案。     

A new large signal HBT model

Several effects important for large signal operations of heterojunction bipolar transistor (HBTs) were not included in the previous HBT models used in most commercial circuit simulators. Exclusion of these effects resulted in large discrepancies between modeled and measured device characteristics. This paper presents a new large signal HBT model which takes into account those important effects for the device operation. The effects have been identified from measured device characteristics and can be justified from first principles. To make it easy to use, the model is made up of the elements available from SPICE. During the course of the model development, an extraction procedure for the model parameters has been established to minimize the uncertainty of the extracted parameter values. The new model has been applied to HBTs with various emitter sizes and excellent agreement has been achieved between modeled and measured data over a wide range of bias conditions and signal frequencies     

基于GaAs HBT工艺的12位1GS/s多奈奎斯特域数模转换器

介绍一种基于1μm GaAs HBT工艺的12位1GS/s多奈奎斯特域数模转换器(DAC)。使用信号归零技术将DAC的有效输出带宽拓展到第三奈奎斯特频域。该DAC在第一至第三奈奎斯特频域内具有平坦的输出功率和较好的SFDR。测试结果表明,与传统DAC相比,多奈奎斯特域DAC在第二奈奎斯特频点附近的输出功率增大37dB,SFDR提高25dB。     

A 100-element HBT grid amplifier

A 100-element 10-GHz grid amplifier has been developed. The active devices in the grid are chips with heterojunction-bipolar-transistor (HBT) differential pairs. The metal grid pattern was empirically designed to provide effective coupling between the HBTs and free space. Two independent measurements, one with focusing lenses and the other without, were used to characterize the grid. In each case, the peak gain was 10 dB at 10 GHz with a 3-dB bandwidth of 1 GHz. The input and output return losses were better than 15 dB at 10 GHz. The maximum output power was 450 mW, and the minimum noise figure was 7 dB. By varying the bias, a signal could be amplitude modulated with a modulation index as large as 0.65. Tests show that the grid was quite tolerant of failures-the output power dropped by only 1 dB when 10% of the inputs were detuned. The grid amplifier is a multimode device that amplifies beams of different shapes and angles. Beams with incidence angles up to 30° were amplified with less than a 3-dB drop in gain     

Smart Phased Array SoCs: A Novel Application for Advanced SiGe HBT BiCMOS Technology

As BiCMOS IC technology continues to advance in scaling and performance, new applications are continually enabled. One such concept is a smart phased array system on a chip (SoC). The combination of high-performance SiGe heterojunction bipolar transistor (HBT) bipolar devices, well-characterized RF/analog passive components, and dense CMOS digital technology provides the capability to create large multielement, electronically tunable phased arrays with onboard processing intelligence, inside a single die. This SoC will have superior characteristics of lower cost, weight, and size as compared to the large multichip, multitechnology, and multipackage systems in deployment today. Furthermore, using reconfigurable logic and embedded memory, this SoC has the advantage of dynamic software and digital signal processing engine updates, without expensive redesigns of the chip. This publication will describe the necessary ingredients to create such an SoC as well as relevant applications of smart phased arrays that require an SiGe HBT BiCMOS technology. Potential markets for this technology include communications systems, weather tracking, radio astronomy, automotive radar, cellular basestation capacity improvement, satellite and aerial resource imaging, ground-level airplane collision avoidance, as well as military tracking and guidance systems.