共查询到20条相似文献,搜索用时 15 毫秒
1.
Minjun Kim Seung Un Ryu Sang Ah Park Kyoungwon Choi Taehyun Kim Dasol Chung Taiho Park 《Advanced functional materials》2020,30(20)
Polymeric semiconductors have demonstrated great potential in the mass production of low‐cost, lightweight, flexible, and stretchable electronic devices, making them very attractive for commercial applications. Over the past three decades, remarkable progress has been made in donor–acceptor (D–A) polymer‐based field‐effect transistors, with their charge‐carrier mobility exceeding 10 cm2 V?1 s?1. Numerous molecular designs of D–A polymers have emerged and evolved along with progress in understanding the charge transport physics behind their high mobility. In this review, the current understanding of charge transport in polymeric semiconductors is covered along with significant features observed in high‐mobility D–A polymers, with a particular focus on polymeric microstructures. Subsequently, emerging molecular designs with further prospective improvements in charge‐carrier mobility are described. Moreover, the current issues and outlook for future generations of polymeric semiconductors are discussed. 相似文献
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Direct Arylation Polycondensation: A Promising Method for the Synthesis of Highly Pure,High‐Molecular‐Weight Conjugated Polymers Needed for Improving the Performance of Organic Photovoltaics 下载免费PDF全文
Junpei Kuwabara Takeshi Yasuda Seong Jib Choi Wei Lu Koutarou Yamazaki Shigehiro Kagaya Liyuan Han Takaki Kanbara 《Advanced functional materials》2014,24(21):3226-3233
Alternating conjugated polymers of ethylenedioxythiophene and fluorene are prepared using three different synthetic methods to investigate the effects of these synthetic methods on the purity, field‐effect transistor (FET) performance, and organic photovoltaic (OPV) performance of the polymer. In this study, microwave‐assisted direct arylation polycondensation is used to obtain a high‐purity, high‐molecular‐weight (147 kDa) polymer. This pure polymer exhibits a high FET hole mobility of 1.2 × 10?3 cm2 V?1 s?1 and high OPV performance with a power conversion efficiency of 4%, even though the polymer forms an amorphous film, which absorbs in a limited region of the spectrum. 相似文献
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Qian Liu Shohei Kumagai Sergei Manzhos Yingqian Chen Indunil Angunawela Masrur Morshed Nahid Krishna Feron Steven E. Bottle John Bell Harald Ade Jun Takeya Prashant Sonar 《Advanced functional materials》2020,30(34)
To achieve semiconducting materials with high electron mobility in organic field‐effect transistors (OFETs), low‐lying energy levels (the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO)) and favorable molecular packing and ordering are two crucial factors. Here, it is reported that the incorporation of pyridine and selenophene into the backbone of a diketopyrrolopyrrole (DPP)‐based copolymer produces a high‐electron‐mobility semiconductor, PDPPy‐Se. Compared with analogous polymers based on other DPP derivatives and selenophene, PDPPy‐Se features a lower LUMO that can decrease the electron transfer barrier for more effective electron injection, and simultaneously a lower HOMO that, however, can increase the hole transfer barrier to suppress the hole injection. Combined with thermal annealing at 240 °C for thin film morphology optimization to achieve large‐scale crystallite domains with tight molecular packing for effective charge transport along the conducting channel, OFET devices fabricated with PDPPy‐Se exhibit an n‐type‐dominant performance with an electron mobility (μe) as high as 2.22 cm2 V?1 s?1 and a hole/electron mobility ratio (μh/μe) of 0.26. Overall, this study demonstrates a simple yet effective approach to boost the electron mobility in organic transistors by synergistic use of pyridine and selenophene in the backbone of a DPP‐based copolymer. 相似文献
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Dandan Shi Zitong Liu Jing Ma Zhiyuan Zhao Luxi Tan Gaobo Lin Jianwu Tian Xisha Zhang Guanxin Zhang Deqing Zhang 《Advanced functional materials》2020,30(21)
A novel building block, denoted as half‐fused diketopyrrolopyrrole (DPP) (9‐(3‐octadecylhenicosyl)‐8‐(thiophen‐2‐yl)‐7H‐pyrrolo[3,4‐a]thieno[3,2‐g]indolizine‐7,10(9H)‐dione), in which one of the flanking thiophene units is fused to one of the DPP rings via a carbon‐carbon double bond at the N‐position is reported. The half‐fused DPP is successfully utilized as an electron acceptor to prepare the conjugated donor–acceptor polymer PTFDFT , which exhibits ambipolar semiconducting behavior in ambient air. Theoretical calculations and absorption spectral studies show that the backbone of PTFDFT is more planar compared to the reference polymer with conventional DPP units. As a result, PTFDFT shows a narrow bandgap and low lowest unoccupied molecular orbital level. The more planar backbone with fewer side chains favors the dense packing of the polymer chains of PTFDFT with a short π–π stacking distance (3.49 Å). Grazing‐incidence wide‐angle X‐ray scattering data further confirm the predominant edge‐on packing mode of the PTFDFT polymer chains on the substrate. As expected, the PTFDFT thin film shows excellent ambipolar semiconducting properties under ambient conditions, reaching 2.23 and 1.08 cm2 V?1 s?1 for the n‐ and p‐channels, respectively. In addition, complementary‐like inverter with gain value as high as 141 is successfully constructed using the PTFDFT thin film. 相似文献
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Joseph A. Letizia Jonathan Rivnay Antonio Facchetti Mark A. Ratner Tobin J. Marks 《Advanced functional materials》2010,20(1):50-58
The temperature dependence of field‐effect transistor (FET) mobility is analyzed for a series of n‐channel, p‐channel, and ambipolar organic semiconductor‐based FETs selected for varied semiconductor structural and device characteristics. The materials (and dominant carrier type) studied are 5,5′′′‐bis(perfluorophenacyl)‐2,2′:5′,2″:5″,2′′′‐quaterthiophene ( 1 , n‐channel), 5,5′′′‐bis(perfluorohexyl carbonyl)‐2,2′:5′,2″:5″,2′′′‐quaterthiophene ( 2 , n‐channel), pentacene ( 3 , p‐channel); 5,5′′′‐bis(hexylcarbonyl)‐2,2′:5′,2″:5″,2′′′‐quaterthiophene ( 4 , ambipolar), 5,5′′′‐bis‐(phenacyl)‐2,2′: 5′,2″:5″,2′′′‐quaterthiophene ( 5 , p‐channel), 2,7‐bis((5‐perfluorophenacyl)thiophen‐2‐yl)‐9,10‐phenanthrenequinone ( 6 , n‐channel), and poly(N‐(2‐octyldodecyl)‐2,2′‐bithiophene‐3,3′‐dicarboximide) ( 7 , n‐channel). Fits of the effective field‐effect mobility (µeff) data assuming a discrete trap energy within a multiple trapping and release (MTR) model reveal low activation energies (EAs) for high‐mobility semiconductors 1 – 3 of 21, 22, and 30 meV, respectively. Higher EA values of 40–70 meV are exhibited by 4 – 7 ‐derived FETs having lower mobilities (µeff). Analysis of these data reveals little correlation between the conduction state energy level and EA, while there is an inverse relationship between EA and µeff. The first variable‐temperature study of an ambipolar organic FET reveals that although n‐channel behavior exhibits EA = 27 meV, the p‐channel regime exhibits significantly more trapping with EA = 250 meV. Interestingly, calculated free carrier mobilities (µ0) are in the range of ~0.2–0.8 cm2 V?1 s?1 in this materials set, largely independent of µeff. This indicates that in the absence of charge traps, the inherent magnitude of carrier mobility is comparable for each of these materials. Finally, the effect of temperature on threshold voltage (VT) reveals two distinct trapping regimes, with the change in trapped charge exhibiting a striking correlation with room temperature µeff. The observation that EA is independent of conduction state energy, and that changes in trapped charge with temperature correlate with room temperature µeff, support the applicability of trap‐limited mobility models such as a MTR mechanism to this materials set. 相似文献
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Layer‐by‐Layer Conjugated Extension of a Semiconducting Polymer for High‐Performance Organic Field‐Effect Transistor 下载免费PDF全文
Mi Jang Se Hyun Kim Han‐Koo Lee Yun‐Hi Kim Hoichang Yang 《Advanced functional materials》2015,25(25):3833-3839
A donor–acceptor (D–A) semiconducting copolymer, PDPP‐TVT‐29, comprising a diketopyrrolopyrrole (DPP) derivative with long, linear, space‐separated alkyl side‐chains and thiophene vinylene thiophene (TVT) for organic field‐effect transistors (OFETs) can form highly π‐conjugated structures with an edge‐on molecular orientation in an as‐spun film. In particular, the layer‐like conjugated film morphologies can be developed via short‐term thermal annealing above 150 °C for 10 min. The strong intermolecular interaction, originating from the fused DPP and D–A interaction, leads to the spontaneous self‐assembly of polymer chains within close proximity (with π‐overlap distance of 3.55 Å) and forms unexpectedly long‐range π‐conjugation, which is favorable for both intra‐ and intermolecular charge transport. Unlike intergranular nanorods in the as‐spun film, well‐conjugated layers in the 200 °C‐annealed film can yield more efficient charge‐transport pathways. The granular morphology of the as‐spun PDPP‐TVT‐29 film produces a field‐effect mobility (μ FET) of 1.39 cm2 V?1 s?1 in an OFET based on a polymer‐treated SiO2 dielectric, while the 27‐Å‐step layered morphology in the 200 °C‐annealed films shows high μ FET values of up to 3.7 cm2 V?1 s?1. 相似文献
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Impact of Polystyrene Oligomer Side Chains on Naphthalene Diimide–Bithiophene Polymers as n‐Type Semiconductors for Organic Field‐Effect Transistors 下载免费PDF全文
Tadanori Kurosawa Yu‐Cheng Chiu Yan Zhou Xiaodan Gu Wen‐Chang Chen Zhenan Bao 《Advanced functional materials》2016,26(8):1261-1270
A series of naphthalene diimide‐based conjugated polymers are prepared with various molar percentage of low molecular weight polystyrene (PS) oligomer of narrow polydispersity as the side chain. The PS side chains are incorporated through preparation of a macromonomer by chain termination of living anionic polymerization. The effects of the PS side chains amount (0–20 mol%) versus overall sidechain on the electrical properties of the resulting polymers as n‐type polymer semiconductors in field‐effect transistors are investigated. We observe that all the studied polymers show similarly high electron mobility (≈0.2 cm2 V?1 s?1). Importantly, the polymers with high PS side chain content (20 mol%) show a significantly improved device stability under ambient conditions, when compared to the polymers at lower PS content (0–10 mol%). By comparing this observation to the physical blending of the conjugated polymer with PS, we attribute the improved stability to the covalently attached PS side chains potentially serving as a molecular encapsulating layer around the conjugated polymer backbone, rendering it less susceptible to electron traps such as oxygen and water molecules. 相似文献
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Won Sik Yoon Sang Kyu Park Illhun Cho Jeong‐A Oh Jong H. Kim Soo Young Park 《Advanced functional materials》2013,23(28):3519-3524
A new high‐performing small molecule n‐channel semiconductor based on diketopyrrolopyrrole (DPP), 2,2′‐(5,5′‐(2,5‐bis(2‐ethylhexyl)‐3,6‐dioxo‐2,3,5,6‐tetrahydropyrrolo[3,4‐c]pyrrole‐1,4‐diyl)bis(thiophene‐5,2‐diyl))bis(methan‐1‐yl‐1‐ylidene)dimalononitrile (DPP‐T‐DCV), is successfully synthesized. The frontier molecular orbitals in this designed structure are elaborately tuned by introducing a strong electron‐accepting functionality (dicyanovinyl). The well‐defined lamellar structures of the crystals display a uniform terrace step height corresponding to a molecular monolayer in the solid‐state. As a result of this tuning and the remarkable crystallinity derived from the conformational planarity, organic field‐effect transistors (OFETs) based on dense‐packed solution‐processed single‐crystals of DPP‐T‐DCV exhibit an electron mobility (μe) up to 0.96 cm2 V?1 s?1, one of the highest values yet obtained for DPP derivative‐based n‐channel OFETs. Polycrystalline OFETs show promise (with an μe up to 0.64 cm2 V?1 s?1) for practical utility in organic device applications. 相似文献
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Thionation Enhances the Electron Mobility of Perylene Diimide for High Performance n‐Channel Organic Field Effect Transistors 下载免费PDF全文
Andrew J. Tilley Chang Guo Mark B. Miltenburg Tyler B. Schon Han Yan Yuning Li Dwight S. Seferos 《Advanced functional materials》2015,25(22):3321-3329
Perylene diimides (PDIs) are one of the most widely studied n‐type materials, showing great promise as electron acceptors in organic photovoltaic devices and as electron transport materials in n‐channel organic field effect transistors. Amongst the well‐established chemical modification strategies for increasing the electron mobility of PDI, substitution of the imide oxygen atoms with sulfur, known as thionation, has remained largely unexplored. In this work, it is demonstrated that thionation is a highly effective means of enhancing the electron mobility of a bis‐N‐alkylated PDI derivative. Successive oxygen–sulfur substitution increases the electron mobility such that the fully thionated derivative ( S4 ) has an average mobility of 0.16 cm2 V?1 s?1. This is two orders of magnitude larger than the nonthionated parent compound ( P ), and is achieved by solution deposition and without thermal or solvent vapor annealing. A combination of atomic force microscopy and 2D wide angle X‐ray scattering experiments, together with theoretical modeling of charge transport efficiency, is used to explain the strong positive correlation observed between electron mobility and degree of thionation. This work establishes thionation as a highly effective means of enhancing the electron mobility of PDI, and provides motivation for the development of thionated PDI derivatives for organic electronics applications. 相似文献
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Ran Kim Paul S. K. Amegadze Il Kang Hui‐Jun Yun Yong‐Young Noh Soon‐Ki Kwon Yun‐Hi Kim 《Advanced functional materials》2013,23(46):5719-5727
A high‐performance naphthalene diimide (NDI)‐based conjugated polymer for use as the active layer of n‐channel organic field‐effect transistors (OFETs) is reported. The solution‐processable n‐channel polymer is systematically designed and synthesized with an alternating structure of long alkyl substituted‐NDI and thienylene–vinylene–thienylene units (PNDI‐TVT). The material has a well‐controlled molecular structure with an extended π‐conjugated backbone, with no increase in the LUMO level, achieving a high mobility and highly ambient stable n‐type OFET. The top‐gate, bottom‐contact device shows remarkably high electron charge‐carrier mobility of up to 1.8 cm2 V?1 s?1 (Ion/Ioff = 106) with the commonly used polymer dielectric, poly(methyl methacrylate) (PMMA). Moreover, PNDI‐TVT OFETs exhibit excellent air and operation stability. Such high device performance is attributed to improved π–π intermolecular interactions owing to the extended π‐conjugation, apart from the improved crystallinity and highly interdigitated lamellar structure caused by the extended π–π backbone and long alkyl groups. 相似文献
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Hisaaki Tanaka Shinya Kawamura Prashant Sonar Yukihiro Shimoi Thu Trang Do Taishi Takenobu 《Advanced functional materials》2020,30(25)
Elucidating the interrelation between the molecular structure and charge transport properties in conjugated polymer thin films is an essential issue in developing the design principle of high‐performance polymer materials for application in organic electronics. In particular, the backbone planarity is suggested to be a key element that governs the transport performance, especially in recently developed donor–acceptor (D–A)‐type copolymers exhibiting high mobility, whereas the direct evaluation of the intrinsic transport performance, usually realized only within the small crystalline domains, is difficult by using conventional macroscopic measurements. Here, it is demonstrated that a D–A type copolymer, PDPPF‐DTT, which consists of furan‐flanked diketopyrrolopyrrole (DPP) and dithienothiophene (DTT) units in the conjugated backbone, exhibits a highly efficient charge transport performance within the crystalline domains with a remarkably low activation energy of less than 8 meV, based on microscopic measurements using field‐induced electron spin resonance spectroscopy. This high transport performance is primarily caused by the high backbone planarity realized by introducing furan‐flanked DPP and fused dithienothiophene units, which is demonstrated from the density functional theory calculations. This result provides a microscopic indication of the effectiveness of the present molecular design to produce a planar backbone and realize highly efficient charge transport performance. 相似文献
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D‐A1‐D‐A2 Backbone Strategy for Benzobisthiadiazole Based n‐Channel Organic Transistors: Clarifying the Selenium‐Substitution Effect on the Molecular Packing and Charge Transport Properties in Electron‐Deficient Polymers 下载免费PDF全文
Yang Wang Tsukasa Hasegawa Hidetoshi Matsumoto Takehiko Mori Tsuyoshi Michinobu 《Advanced functional materials》2017,27(33)
Unipolar n‐type semiconducting polymers based on the benzobisthiadiazole (BBT) unit and its heteroatom‐substituted derivatives are for the first time synthesized by the D‐A1‐D‐A2 polymer‐backbone design strategy. Selenium (Se) substitution is a very effective molecular design, but it has been seldom studied in n‐type polymers. In this study, within the similar conjugated framework, the Se substitution effects on the optical, electrochemical, solid‐state polymer packing, electron mobility, and air‐stability of the target unipolar n‐type polymers are unraveled. Replacing the sulfur (S) atom in the thiadiazole heterocycles with the Se atom leads to narrower bandgaps and deeper lowest unoccupied molecular orbital (LUMO) levels of the n‐type polymers. Furthermore, the Se‐substituted polymer (pSeN‐NDI) shows shorter lamellar packing distances and stronger edge‐on π–π stacking interactions than its S‐counterpart (pSN‐NDI), as observed by the two‐dimensional grazing‐incidence wide‐angle X‐ray scattering (GIWAXS) patterns. With the deeper LUMO level and thin‐film microstructures suitable for transistors, pSeN‐NDI exhibits four‐fold higher electron mobilities (μe) than pSN‐NDI. However, the other Se‐containing polymer, pSeS‐NDI, forms rather amorphous film structures, which is caused by its limited thermal stability and decomposition during the thermal annealing processes, thus giving rise to a lower μe than its S‐counterpart (pBBT‐NDI). Most importantly, pBBT‐NDI demonstrates an electron mobility of 0.039 cm2 V?1 s?1, which is noticeable among the unipolar n‐type polymers based on the BBT and its analogs. 相似文献
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Hyun Ho Choi Yaroslav I. Rodionov Alexandra F. Paterson Julianna Panidi Danila Saranin Nikolai Kharlamov Sergei I. Didenko Thomas D. Anthopoulos Kilwon Cho Vitaly Podzorov 《Advanced functional materials》2018,28(26)
Charge carrier mobility is an important characteristic of organic field‐effect transistors (OFETs) and other semiconductor devices. However, accurate mobility determination in FETs is frequently compromised by issues related to Schottky‐barrier contact resistance, that can be efficiently addressed by measurements in 4‐probe/Hall‐bar contact geometry. Here, it is shown that this technique, widely used in materials science, can still lead to significant mobility overestimation due to longitudinal channel shunting caused by voltage probes in 4‐probe structures. This effect is investigated numerically and experimentally in specially designed multiterminal OFETs based on optimized novel organic‐semiconductor blends and bulk single crystals. Numerical simulations reveal that 4‐probe FETs with long but narrow channels and wide voltage probes are especially prone to channel shunting, that can lead to mobilities overestimated by as much as 350%. In addition, the first Hall effect measurements in blended OFETs are reported and how Hall mobility can be affected by channel shunting is shown. As a solution to this problem, a numerical correction factor is introduced that can be used to obtain much more accurate experimental mobilities. This methodology is relevant to characterization of a variety of materials, including organic semiconductors, inorganic oxides, monolayer materials, as well as carbon nanotube and semiconductor nanocrystal arrays. 相似文献
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Hung Phan Michael J. Ford Alexander T. Lill Ming Wang Guillermo C. Bazan Thuc‐Quyen Nguyen 《Advanced functional materials》2018,28(17)
The field effect transistor (FET) is arguably one of the most important circuit elements in modern electronics. Recently, a need has developed for flexible electronics in a variety of emerging applications. Examples include form‐fitting healthcare‐monitoring devices, flexible displays, and flexible radio frequency identification tags. Organic FETs (OFETs) are viable candidates for producing such flexible devices because they incorporate semiconducting π‐conjugated materials, including small molecules and conjugated polymers, which are intrinsically soft and mechanically compatible with flexible substrates. For OFETs to be industrially viable, however, they must achieve not only high charge carrier mobility, but also ideal and comprehensible electrical characteristics. Most recently, nonideal double‐slope characteristics in the transfer curves of OFETs (i.e., high slope at low gate voltage and low slope at high gate voltage), have stirred debate, which has led to different mechanistic rationales in the literature. This review focuses on the general observations, mechanistic understanding, and possible solutions associated with phenomena that result in FETs with double‐slope characteristics. By surveying and systematically summarizing in a single source relevant literature that deals with the issue of double slope, the experimental framework and theoretical basis for interpreting and avoiding this electrical nonideality in OFETs is provided. 相似文献
18.
Yutaka Ie Masashi Nitani Makoto Karakawa Hirokazu Tada Yoshio Aso 《Advanced functional materials》2010,20(6):907-913
An electronegative conjugated compound composed of a newly designed carbonyl‐bridged bithiazole unit and trifluoroacetyl terminal groups is synthesized as a candidate for air‐stable n‐type organic field‐effect transistor (OFET) materials. Cyclic voltammetry measurements reveal that carbonyl‐bridging contributes both to lowering the lowest unoccupied molecular orbital energy level and to stabilizing the anionic species. X‐ray crystallographic analysis of the compound shows a planar molecular geometry and a dense molecular packing, which is advantageous to electron transport. Through these appropriate electrochemical properties and structures for n‐type semiconductor materials, OFET devices based on this compound show electron mobilities as high as 0.06 cm2 V?1 s?1 with on/off ratios of 106 and threshold voltages of 20 V under vacuum conditions. Furthermore, these devices show the same order of electron mobility under ambient conditions. 相似文献
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W. S. Christian Roelofs Willem H. Adriaans René A. J. Janssen Martijn Kemerink Dago M. de Leeuw 《Advanced functional materials》2013,23(33):4133-4139
Light emission from ambipolar organic field‐effect transistors (OFETs) is often observed when they are operated in the unipolar regime. This is unexpected, the light emission should be completely suppressed, because in the unipolar regime only one type of charge carrier is accumulated. Here, an electroluminescent diketopyrrolopyrrole copolymer is investigated. Local potential measurements by scanning Kelvin probe microscopy reveal a recombination position that is unstable in time due to the presence of injection barriers. The electroluminescence and electrical transport have been numerically analyzed. It is shown that the counterintuitive unipolar light emission is quantitatively explained by injection of minority carriers into deep tail states of the semiconductor. The density of the injected minority carriers is small. Hence they are relatively immobile and they recombine close the contact with accumulated majority carriers. The unipolar light output is characterized by a constant efficiency independent of gate bias. It is argued that light emission from OFETs predominantly originates from the unipolar regime when the charge transport is injection limited. 相似文献
20.
Jinyu Liu Zhengsheng Qin Haikuo Gao Huanli Dong Jia Zhu Wenping Hu 《Advanced functional materials》2019,29(17)
Field‐effect transistors are the fundamental building blocks for electronic circuits and processors. Compared with inorganic transistors, organic field‐effect transistors (OFETs), featuring low cost, low weight, and easy fabrication, are attractive for large‐area flexible electronic devices. At present, OFETs with planar structures are widely investigated device structures in organic electronics and optoelectronics; however, they face enormous challenges in realizing large current density, fast operation speed, and outstanding mechanical flexibility for advancing their potential commercialized applications. In this context, vertical organic field‐effect transistors (VOFETs), composed of vertically stacked source/drain electrodes, could provide an effective approach for solving these questions due to their inherent small channel length and unique working principles. Since the first report of VOFETs in 2004, impressive progress has been witnessed in this field with the improvement of device performance. The aim of this review is to give a systematical summary of VOFETs with a special focus on device structure optimization for improved performance and potential applications demonstrated by VOFETs. An overview of the development of VOFETs along with current challenges and perspectives is also discussed. It is hoped that this review is timely and valuable for the next step in the rapid development of VOFETs and their related research fields. 相似文献