Novel and Enhanced Optoelectronic Performances of Multilayer MoS2–WS2 Heterostructure Transistors

Van der Waals heterostructures designed by assembling isolated two‐dimensional (2D) crystals have emerged as a new class of artificial materials with interesting and unusual physical properties. Here, the multilayer MoS₂–WS₂ heterostructures with different configurations are reported and their optoelectronic properties are studied. It is shown that the new heterostructured material possesses new functionalities and superior electrical and optoelectronic properties that far exceed the one for their constituents, MoS₂ or WS₂. The vertical transistor exhibits a novel rectifying and bipolar behavior, and can also act as photovoltaic cell and self‐driven photodetector with photo‐switching ratio exceeding 10³. The planar device also exhibits high field‐effect ON/OFF ratio (>10⁵), high electron mobility of 65 cm²/Vs, and high photo­responsivity of 1.42 A/W compared to that in isolated multilayer MoS₂ or WS₂ nanoflake transistors. The results suggest that formation of MoS₂–WS₂ heterostructures could significantly enhance the performance of optoelectronic devices, thus open up possibilities for future nanoelectronic, photovoltaic, and optoelectronic applications.     

Morphology Engineering in Monolayer MoS2‐WS2 Lateral Heterostructures

In recent years, heterostructures formed in transition metal dichalcogenides (TMDs) have attracted significant attention due to their unique physical properties beyond the individual components. Atomically thin TMD heterostructures, such as MoS₂‐WS₂, MoS₂‐MoSe₂, MoS₂‐WSe₂, and WSe₂‐WS₂, are synthesized so far via chemical vapor deposition (CVD) method. Engineering the morphology of domains including size and shape, however, still remains challenging. Here, a one‐step CVD strategy on the morphology engineering of MoS₂ and WS₂ domains within the monolayer MoS₂‐WS₂ lateral heterostructures through controlling the weight ratio of precursors, MoO₃ and WO₃, as well as tuning the reaction temperature is reported. Not only can the size ratio in terms of area between WS₂ and MoS₂ domains be easily controlled from less than 1 to more than 20, but also the overall heterostructure size can be tuned from several to hundreds of micrometers. Intriguingly, the quantum well structure, a WS₂ stripe embedded in the MoS₂ matrix, is also observed in the as‐synthesized heterostructures, offering opportunities to study quantum confinement effects and quantum well applications. This approach paves the way for the large‐scale fabrication of MoS₂‐WS₂ lateral heterostructures with controllable domain morphology, and shall be readily extended to morphology engineering of other TMD heterostructures.     

Ultrafast Plasmonic Hot Electron Transfer in Au Nanoantenna/MoS2 Heterostructures

2D transition metal dichalcogenides are becoming attractive materials for novel photoelectric and photovoltaic applications due to their excellent optoelectric properties and accessible optical bandgap in the near‐infrared to visible range. Devices utilizing 2D materials integrated with metal nanostructures have recently emerged as efficient schemes for hot electron‐based photodetection. Metal‐semiconductor heterostructures with low cost, simple procedure, and fast response time are crucial for the practical applications of optoelectric devices. In this paper, template‐based sputtering method is used first to fabricate Au nanoantenna (NA)/MoS₂ heterostructures with low cost, simple preparation, broad spectral response, and fast response time. Through the measurement of femtosecond pump‐probe spectroscopy, it is demonstrated that plasmon‐induced hot electron transfer takes place in the Au NA/MoS₂ heterostructure on the order of 200 fs with an injected electron density of about 5.6 × 10¹² cm^?2. Moreover, the pump‐power‐dependent photoluminescence spectra confirm that the exciton energy of MoS₂ can be enhanced, coupled, and reradiated by the Au NA. Such ultrafast plasmon‐induced hot electron transfer in the metal‐semiconductor heterostructure can enable novel 2D devices for light harvesting and photoelectric conversion.     

Optoelectronics based on 2D TMDs and heterostructures

2D materials including graphene and TMDs have proven interesting physical properties and promising optoelectronic applications. We reviewed the growth, characterization and optoelectronics based on 2D TMDs and their heterostructures, and demonstrated their unique and high quality of performances. For example, we observed the large mobility, fast response and high photo-responsivity in MoS₂, WS₂ and WSe₂ phototransistors, as well as the novel performances in vdW heterostructures such as the strong interlayer coupling, am-bipolar and rectifying behaviour, and the obvious photovoltaic effect. It is being possible that 2D family materials could play an increasingly important role in the future nano- and opto-electronics, more even than traditional semiconductors such as silicon.     

Transition‐Metal‐Carbide (Mo2C) Multiperiod Gratings for Realization of High‐Sensitivity and Broad‐Spectrum Photodetection

A novel hybrid phototransistor consisting of molybdenum carbide (Mo₂C) and molybdenum disulfide (MoS₂) is proposed. By exploiting the interface properties of MoS₂ and Mo₂C, a highly sensitive and broad‐spectral response photodetector is fabricated. The underlying mechanism of the enhanced performance is the efficient hot carrier injection from Mo₂C to MoS₂. The strong coupling of MoS₂ and Mo₂C at the interface provides the significantly low Schottky barrier height (≈70 meV), which gives rise to the significantly efficient hot carrier transfer from Mo₂C to MoS₂. The grating of metallic Mo₂C produces plasmonic resonance, which provides hot carriers to the MoS₂ channel. By adjusting the grating period of Mo₂C (400–1000 nm), the optimal photoresponse of light can be controlled, from visible to NIR. By integrating various Mo₂C multigrating periods (400–1000 nm) with MoS₂, a novel photodetector is demonstrated with high responsivity (R > 10³ A W^?1) and light‐to‐dark current ratio (>10²) over a broad spectral range (405–1310 nm). The proposed novel hybrid photodetector, 2D semiconductors with multigrating 2D metallic stripes, exhibits high sensitivity and broad spectral detection of light and can overcome the inherent weakness of conventional 2D photodetectors, paving the way forward for next‐generation photoelectric devices.     

Electric Field Tunable Interlayer Relaxation Process and Interlayer Coupling in WSe2/Graphene Heterostructures

Transition metal dichalcogenides van der Waals (vdWs) heterostructures present fascinating optical and electronic phenomena, and bear tremendous significance for electronic and optoelectronic applications. As the significant merits in vdWs heterostructures, the interlayer relaxation of excitons and interlayer coupling at the heterointerface reflect the dynamic behavior of charge transfer and the coupled electronic/structural characteristics, respectively, which may give rise to new physics induced by quantum coupling. In this work, upon tuning the photoluminescence (PL) properties of WSe₂/graphene and WSe₂/MoS₂/graphene heterostructures by virtue of electric field, it is demonstrated that the interlayer relaxation of excitons at the heterointerface in WSe₂/graphene, which is even stronger than that in MoS₂/graphene and WSe₂/MoS₂ , plays a dominant role in PL tuning in WSe₂/graphene, while the carrier population in WSe₂ induced by electric field has a minor contribution. In addition, it is discovered that the interlayer coupling between monolayer WSe₂ and graphene is enhanced under high electric field, which breaks the momentum conservation of first order Raman‐allowed phonons in graphene, yielding the enhanced Raman scattering of defects in graphene. The interplay between electric field and vdWs heterostructures may provide versatile approaches to tune the intrinsic electronic and optical properties of the heterostructures.     

Optical and Electrical Enhancement of Hydrogen Evolution by MoS2@MoO3 Core–Shell Nanowires with Designed Tunable Plasmon Resonance

The design of transition‐metal chalcogenides (TMCs) photocatalysts for water splitting is highly important, in which both light absorption and interfacial engineering play vital roles in photoexcited electron generation, electron transport, and ultimately speeding up water splitting. To this end, plasmonic metal nanomaterials with surface plasmon resonances are promising candidates. However, it is very difficult to enhance the light absorption and manage the interfacial engineering simultaneously, thus, resulting in suboptimal photocatalytic performance. Here, a doped semiconductor plasmon is proposed to optically and electrically enhance TMCs hydrogen evolution. With the tunability of plasmon resonance in a doped MoO₃ semiconductor via hydrogen reduction, the broadband absorption and good interfacial engineering are simultaneously demonstrated in flexible MoS₂@MoO₃ core–shell nanowire photocatalysts. Better energy‐band alignment with MoS₂ can also be realized, thereby achieving improved photoinduced electron generation. More importantly, the defects at the interface between MoO₃ and MoS₂ are effectively reduced because of precise tunability of plasmon resonance, which enhances electron transport. As a proof of concept, this optimized hybrid nanostructure exhibits outstanding H₂ evolution characteristics (841.4 μmol h^?1 g^?1), excellent stability, and good flexibility. The value is also one of the highest hydrogen evolution activity rates to date among the two dimensional‐layered visible‐light photocatalysts.     

Tailoring of Silver Nanocubes with Optimized Localized Surface Plasmon in a Gap Mode for a Flexible MoS2 Photodetector

Although noble metal nanoparticles as nanoantenna have been applied in 2D material‐based optoelectronic devices, the impact of their morphologies on device performance is still rarely investigated. In this paper, the tailoring of silica‐coated Ag nanocubes with optimized localized surface plasmon in a gap mode for a flexible MoS₂ photodetector is demonstrated for the first time. The finite different time domain simulation reveals that the Ag nanocubes with an edge length of 60 nm achieve a maximum electromagnetic field enhancement of 2.8 × 10⁶‐fold under excitation of 520 nm incident light, which is about four orders of magnitude higher than that of Ag nanospheres and nanorods. The Ag nanocube modified devices exhibit excellent performance at low operating potential. External photoresponsivity reaches 7940 A W^?1 at 3 V under an incident power of 2.2 pW, achieving a 38‐fold enhancement compared to the pristine MoS₂ photodetector, which is more than one order of magnitude higher than most of the reported MoS₂ photodetectors. The flexible devices also display a good mechanical endurance during 10 000 bending cycles. These results indicate that Ag nanocubes coupled with Ag films show great prospect for their application in the field of 2D material‐based optoelectronic devices.     

MoS2/Si Heterojunction with Vertically Standing Layered Structure for Ultrafast,High‐Detectivity,Self‐Driven Visible–Near Infrared Photodetectors

As an interesting layered material, molybdenum disulfide (MoS₂) has been extensively studied in recent years due to its exciting properties. However, the applications of MoS₂ in optoelectronic devices are impeded by the lack of high‐quality p–n junction, low light absorption for mono‐/multilayers, and the difficulty for large‐scale monolayer growth. Here, it is demonstrated that MoS₂ films with vertically standing layered structure can be deposited on silicon substrate with a scalable sputtering method, forming the heterojunction‐type photodetectors. Molecular layers of the MoS₂ films are perpendicular to the substrate, offering high‐speed paths for the separation and transportation of photo‐generated carriers. Owing to the strong light absorption of the relatively thick MoS₂ film and the unique vertically standing layered structure, MoS₂/Si heterojunction photodetectors with unprecedented performance are actualized. The self‐driven MoS₂/Si heterojunction photodetector is sensitive to a broadband wavelength from visible light to near‐infrared light, showing an extremely high detectivity up to ≈10¹³ Jones (Jones = cm Hz^1/2 W^?1), and an ultrafast response speed of ≈3 μs. The performance is significantly better than the photodetectors based on mono‐/multilayer MoS₂ nanosheets. Additionally, the MoS₂/Si photodetectors exhibit excellent stability in air for a month. This work unveils the great potential of MoS₂/Si heterojunction for optoelectronic applications.     

Phototransistors with Negative or Ambipolar Photoresponse Based on As‐Grown Heterostructures of Single‐Walled Carbon Nanotube and MoS2

A facile synthesis method for the heterostructures of single‐walled carbon nanotubes (SWCNTs) and few‐layer MoS₂ is reported. The heterostructures are realized by in situ chemical vapor deposition of MoS₂ on individual SWCNTs. Field effect transistors based on the heterostructures display different transfer characteristics depending on the formation of MoS₂ conduction channels along SWCNTs. Under light illumination, negative photoresponse originating from charge transfer from MoS₂ to SWCNT is observed while positive photoresponse is observed in MoS₂ conduction channels, leading to ambipolar photoresponse in devices with both SWCNT and MoS₂ channels. The heterostructure phototransistor, for negative photoresponse, exhibits high responsivity (100–1000 AW^?1) at low bias voltages (0.1 V) in the visible spectrum (500–700 nm) by combining high mobility conduction channel (SWCNT) with efficient light absorber (MoS₂).     

High‐Sensitivity Floating‐Gate Phototransistors Based on WS2 and MoS2

In recent years, 2D layered materials have been considered as promising photon absorption channel media for next‐generation phototransistors due to their atomic thickness, easily tailored single‐crystal van der Waals heterostructures, ultrafast optoelectronic characteristics, and broadband photon absorption. However, the photosensitivity obtained from such devices, even under a large bias voltage, is still unsatisfactory until now. In this paper, high‐sensitivity phototransistors based on WS₂ and MoS₂ are proposed, designed, and fabricated with gold nanoparticles (AuNPs) embedded in the gate dielectric. These AuNPs, located between the tunneling and blocking dielectric, are found to enable efficient electron trapping in order to strongly suppress dark current. Ultralow dark current (10^?11 A), high photoresponsivity (1090 A W^?1), and high detectivity (3.5 × 10¹¹ Jones) are obtained for the WS₂ devices under a low source/drain and a zero gate voltage at a wavelength of 520 nm. These results demonstrate that the floating‐gate memory structure is an effective configuration to achieve high‐performance 2D electronic/optoelectronic devices.     

Synthesis of 2H‐1T′ WS2‐ReS2 Heterophase Structures with Atomically Sharp Interface via Hydrogen‐Triggered One‐Pot Growth

2D transition metal chalcogenides (TMDs) with different compositions, phase structures, and properties offer giant opportunities for building novel 2D lateral heterostructures. However, the studies to date have been largely limited to homophase TMD heterostructures, while the construction of heterophase TMD heterostructures remains a challenge. Herein, the synthesis of 2H‐1T′ WS₂‐ReS₂ heterophase junctions with high‐quality interface structure via a hydrogen‐triggered one‐pot growth approach is reported. Sequential introduction of hydrogen during growth system, which acts as a “switch” to selectively turn off the growth of ReS₂ while turning on the growth of WS₂, allows WS₂ to seamlessly grow around ReS₂ to form the WS₂‐ReS₂ heterojunction. Moreover, WS₂ prefers to nucleate at the vertices of ReS₂ grain with fixed lattice orientation, which makes the surrounding WS₂ grains merge into single crystal. Scanning transmission electron microscopy reveals high crystal quality of the heterojunction with an atomically sharp 2H‐1T′ heterophase interface. Transient absorption spectroscopy indicates that the photocarriers can effectively separate at the heterophase interface. Based on the high quality heterophase junction, prominent rectification characteristics and polarization‐dependent photodiode properties are achieved. This study provides a robust way for the controlled synthesis of 2D heterophase structures, which is essential for their fundamental studies and device applications.     

Fluorescent Block Copolymer‐MoS2 Nanocomposites for Real‐Time Photothermal Heating and Imaging

Novel self‐monitoring photothermal (PT) agents are developed using optothermally responsive block copolymer‐MoS₂ composites (BCP‐MoS₂), which enable simultaneous PT heating and imaging of temperature profiles. In particular, upon near‐infrared light exposure, PT energy from MoS₂ successfully increases local temperature and induces thermally activated conformational transitions of the BCP on MoS₂. This leads to fluorescent signal changes caused by distance‐dependent Förster resonance energy transfer between the BCP and MoS₂. Importantly, it is demonstrated that the use of BCP‐MoS₂ for PT heating and optical mapping is fully reversible with excellent stability. The detailed mechanism of the responsive behavior of BCP‐MoS₂ is elucidated by measurements of time‐resolved fluorescence and dynamic light scattering. In addition, the BCP‐MoS₂ system is integrated into organogel matrices to demonstrate its potential as aportable, self‐monitoring PT system suitable for biological and environmental applications.     

Interlayer Transition in a vdW Heterostructure toward Ultrahigh Detectivity Shortwave Infrared Photodetectors

Van der Waals (vdW) heterostructures of 2D atomically thin layered materials (2DLMs) provide a unique platform for constructing optoelectronic devices by staking 2D atomic sheets with unprecedented functionality and performance. A particular advantage of these vdW heterostructures is the energy band engineering of 2DLMs to achieve interlayer excitons through type‐II band alignment, enabling spectral range exceeding the cutoff wavelengths of the individual atomic sheets in the 2DLM. Herein, the high performance of GaTe/InSe vdW heterostructures device is reported. Unexpectedly, this GaTe/InSe vdWs p–n junction exhibits extraordinary detectivity in a new shortwave infrared (SWIR) spectrum, which is forbidden by the respective bandgap limits for the constituent GaTe (bandgap of ≈1.70 eV in both the bulk and monolayer) and InSe (bandgap of ≈1.20–1.80 eV depending on thickness reduction from bulk to monolayer). Specifically, the uncooled SWIR detectivity is up to ≈10¹⁴ Jones at 1064 nm and ≈10¹² Jones at 1550 nm, respectively. This result indicates that the 2DLM vdW heterostructures with type‐II band alignment produce an interlayer exciton transition, and this advantage can offer a viable strategy for devising high‐performance optoelectronics in SWIR or even longer wavelengths beyond the individual limitations of the bandgaps and heteroepitaxy of the constituent atomic layers.     

Large‐Area,Flexible Broadband Photodetector Based on ZnS–MoS2 Hybrid on Paper Substrate

Flexible broadband photodetectors based on 2D MoS₂ have gained significant attention due to their superior light absorption and increased light sensitivity. However, pristine MoS₂ has absorption only in visible and near IR spectrum. This paper reports a paper‐based broadband photodetector having ZnS–MoS₂ hybrids as active sensing material fabricated using a simple, cost effective two‐step hydrothermal method wherein trilayer MoS₂ is grown on cellulose paper followed by the growth of ZnS on MoS₂. Optimization in terms of process parameters is done to yield uniform trilayer MoS₂ on cellulose paper. UV sensing property of ZnS and broadband absorption of MoS₂ in visible and IR, broadens the range from UV to near IR. ZnS plays the dual role for absorption in UV and in the generation of local electric fields, thereby increasing the sensitivity of the sensor. The fabricated photodetector exhibits a higher responsivity toward the visible light when compared to UV and IR light. Detailed studies in terms of energy band diagram are presented to understand the charge transport mechanism. This represents the first demonstration of a paper‐based flexible broadband photodetector with excellent photoresponsivity and high bending capability that can be used for wearable electronics, flexible security, and surveillance systems, etc.     

MoS2/Graphene Composite Anodes with Enhanced Performance for Sodium‐Ion Batteries: The Role of the Two‐Dimensional Heterointerface

Graphene has been widely used as conformal nanobuilding blocks to improve the electrochemical performance of layered metal sulfides (MoS₂, WS₂, SnS, and SnS₂) as anode materials for sodium‐ion batteries. However, it still lacks in‐depth understanding of the synergistic effect between these layered sulfides and graphene, which contributes to the enhanced electroactivity for sodium‐ion batteries. Here, MoS₂/reduced graphene oxide (RGO) nanocomposites with intimate two‐dimensional heterointerfaces are prepared by a facile one‐pot hydrothermal method. The heterointerfacial area can be effectively tuned by changing the ratio of MoS₂ to RGO. When used as anode materials for sodium‐ion batteries, the synergistic effect contributing to the enhanced reversible capacity of MoS₂/RGO nanocomposites is closely related with the heterointerfacial area. The computational results demonstrate that Na prefers to be adsorbed on MoS₂ in the MoS₂/RGO heterostructure rather than intercalate into the MoS₂/RGO heterointerface. Interestingly, the MoS₂/RGO heterointerfaces can significantly increase the electronic conductivity of MoS₂, store more Na ions, while maintaining the high diffusion mobility of Na atoms on MoS₂ surface and high electron transfer efficiency from Na to MoS₂. It is expected that the efforts to establish the correlation between the two‐dimensional heterointerface and the electrochemical sodium‐ion storage performance offer fundamental understanding for the rational design of layered metal sulfides/graphene composites as high‐performance electrode materials for sodium‐ion batteries.     

Distinct Optoelectronic Signatures for Charge Transfer and Energy Transfer in Quantum Dot–MoS2 Hybrid Photodetectors Revealed by Photocurrent Imaging Microscopy

Atomically thin transition metal dichalcogenides (TMDCs) have intriguing nanoscale properties like high charge mobility, photosensitivity, layer‐thickness‐dependent bandgap, and mechanical flexibility, which are all appealing for the development of next generation optoelectronic, catalytic, and sensory devices. Their atomically thin thickness, however, renders TMDCs poor absorptivity. Here, bilayer MoS₂ is combined with core‐only CdSe QDs and core/shell CdSe/ZnS QDs to obtain hybrids with increased light harvesting and exhibiting interfacial charge transfer (CT) and nonradiative energy transfer (NET), respectively. Field‐effect transistors based on these hybrids and their responses to varying laser power and applied gate voltage are investigated with scanning photocurrent microscopy (SPCM) in view of their potential utilization in light harvesting and photodetector applications. CdSe–MoS₂ hybrids are found to exhibit encouraging properties for photodetectors, like high responsivity and fast on/off response under low light exposure while CdSe/ZnS–MoS₂ hybrids show enhanced charge carrier generation with increased light exposure, thus suitable for photovoltaics. While distinguishing optically between CT and NET in QD–TMDCs is nontrivial, it is found that they can be differentiated by SPCM as these two processes exhibit distinctive light‐intensity dependencies: CT causes a photogating effect, decreasing the photocurrent response with increasing light power while NET increases the photocurrent response with increasing light power, opposite to CT case.     

2D/2D 1T‐MoS2/Ti3C2 MXene Heterostructure with Excellent Supercapacitor Performance

2D/2D heterostructures can combine the collective advantages of each 2D material and even show improved properties from synergistic effects. 2D Transition metal carbide Ti₃C₂ MXene and 2D 1T‐MoS₂ have emerged as attractive prototypes in electrochemistry due to their rich properties. Construction of these two 2D materials, as well as investigation about synergistic effects, is absent due to the instability of 1T‐MoS₂. Here, 3D interconnected networks of 1T‐MoS₂/Ti₃C₂ MXene heterostructure are constructed by magneto‐hydrothermal synthesis, and the electrochemical storage mechanisms are investigated. Improved extra capacitance is observed due to enlarged ion storage space from a synergistically interplayed effect in 3D interconnected networks. Outstanding rate performance is realized because of ultrafast electron transport originating from Ti₃C₂ MXene. This work provides an archetype to realize excellent electrochemical properties in 2D/2D heterostructures.     

Wafer Scale Synthesis and High Resolution Structural Characterization of Atomically Thin MoS2 Layers

Synthesis of atomically thin MoS₂ layers and its derivatives with large‐area uniformity is an essential step to exploit the advanced properties of MoS₂ for their possible applications in electronic and optoelectronic devices. In this work, a facile method is reported for the continuous synthesis of atomically thin MoS₂ layers at wafer scale through thermolysis of a spin coated‐ammonium tetrathiomolybdate film. The thickness and surface morphology of the sheets are characterized by atomic force microscopy. The optical properties are studied by UV–Visible absorption, Raman and photoluminescence spectroscopies. The compositional analysis of the layers is done by X‐ray photo­emission spectroscopy. The atomic structure and morphology of the grains in the polycrystalline MoS₂ atomic layers are examined by high‐angle annular dark‐field scanning transmission electron microscopy. The electron mobilities of the sheets are evaluated using back‐gate field‐effect transistor configuration. The results indicate that this facile method is a promising approach to synthesize MoS₂ thin films at the wafer scale and can also be applied to synthesis of WS₂ and hybrid MoS₂‐WS₂ thin layers.     

High‐Performance Ultraviolet Photodetector Based on a Few‐Layered 2D NiPS3 Nanosheet

2D materials, represented by transition metal dichalcogenides (TMDs), have attracted tremendous research interests in photoelectronic and electronic devices. However, for their relatively small bandgap (<2 eV), the application of traditional TMDs into solar‐blind ultraviolet (UV) photodetection is restricted. Here, for the first time, NiPS₃ nanosheets are grown via chemical vapor deposition method. The nanosheets thinning to 3.2 nm with the lateral size of dozens of micrometers are acquired. Based on the various nanosheets, a linearity is found between the Raman intensity of specific A_g modes and the thickness, providing a convenient method to determine their layer numbers. Furthermore, a UV photodetector is fabricated using few‐layered 2D NiPS₃ nanosheets. It shows an ultrafast rise time shorter than 5 ms with an ultralow dark current less than 10 fA. Notably, this UV photodetector demonstrates a high detectivity of 1.22 × 10¹² Jones, outperforming some traditional wide‐bandgap UV detectors. The wavelength‐dependent photoresponsivity measurement allows the direct observation of an admirable cut‐off wavelength at 360 nm, which indicates a superior spectral selectivity. The promising photodetector performance, accompanied with the controllable fabrication and transfer process of nanosheet, lays the foundation of applying 2D semiconductors for ultrafast UV light detection.