纳米尺度线宽粗糙度测量技术

综述了纳米尺度线宽粗糙度测量研究现状.分别论述了线宽粗糙度定义、各种测量工具的优缺点、目前线宽粗糙度采用的测量方法、分析方法及其表征参数,讨论了线宽粗糙度的测量障碍.分析了线宽粗糙度测量不确定度的构成,讨论了采用原子力显微镜为工具的线宽粗糙度测量的影响因素.     

基于DSHI的窄线宽光纤激光器线宽测量

窄线宽光纤激光器的线宽作为相干光学系统的重要参数需要进行准确的测定,延时自外差法(DSHI)是测量窄线宽比较理想的方法.本文讨论了DSHI测量线宽的基本原理,根据DSHI的功率谱表达式,利用MATLAB程序对不同光纤延迟线长度条件下的DSHI功率谱进行了仿真,并分析和讨论了光纤延迟线长度对线宽测量结果的影响.建立了1550 nm波长的DSHI线宽测量系统,对IPG公司的光纤激光器线宽进行了测量.该系统用示波器代替频谱仪,并采用FFT软件算法对示波器获取的光电流信号进行分析,测得该激光器的线宽约为16 kHZ,在理想的精度范围内.     

顶部线宽中曲线匹配法测量线宽的研究

针对原子力显微镜(AFM)在测量线宽等具有陡直边墙的表面形貌时针尖轮廓对测量结果有很大影响的问题,在用AFM可以获取较准确的刻线单侧边墙和顶部线宽的情况下,依据数学形态学理论和图像配准技术,提出了从一面测量后旋转样品再从另一面测量,并基于刻线顶部线宽中曲线配准图像测量线宽的方法,仿真出了配准后的测量图像,给出了配准图像的线宽。     

原子力显微镜探针原位有效参数对线宽测量的修正

针对原子力显微镜（AFM）的线宽和轮廓的精确测量，对AFM探针的原位有效参数进行了定义和表征，提出使用AFM探针的原位有效参数对AFM的线宽测量结果进行修正的模型。采用有效半径和半内角表征AFM探针的复合形状，悬臂轴倾角表征探针的安装状态，设计了具有不同梯形截面的两个表征样板，通过对表征样板进行AFM和扫描电子显微镜（SEM）的比对测量获得了探针的原位有效参数。提出了在线宽测量中，当AFM的扫描轮廓线具有不同的斜度时分别采用的不同的修正公式。采用此公式和探针的原位参数对掩膜板的AFM线宽测量结果进行了修正。     

用于线宽测量的偏振干涉共焦显微测量方法

提出一种融合共焦显微技术和偏振干涉技术的偏振干涉共焦显微测量方法。利用共焦技术进行准确的焦点定位，以获得最佳的测量光斑；同时，利用照射到台阶边缘的不同偏振方向(平行和垂直于台阶边缘)的线偏振光反射后产生的相位变化不同这一特性，进行边缘定位。相位变化是利用外差干涉测相的方法得到的。这一系统完全符合共光路原则，有很强的抗干扰能力。利用该系统对标准线宽样板进行了测量，测量结果与中国计量科学研究院用原子力显微镜测量的结果，以及厂商提供的可溯源到美国NIST光学线宽标准的测量值都符合的很好；还对同一刻线进行了5次重复性测量，其极限偏差为20m。     

定位指示激光的线宽研究

研究了定位指示激光的线宽问题,也就是激光定位仪的定位精度问题.通过理论模拟和相关实验,研究影响激光束宽度的光环境因素,指出特定功率的激光束在不同光环境下的束宽是不同的,并且给出光照环境对束宽的影响程度及量化数据.对相关工作者有一定的实际意义.     

电磁流量计异径管道的流场仿真研究

采用Fluent软件对圆形截面渐变为矩形截面的异径管道流场进行三维建模和数值仿真,分析了横截面收缩异径管的速度分布和流线,建立了矩形截面部分的长度、宽度、高度与进出口压力损失和中心截面平均速度之间的关系.研究表明,中间矩形截面部分的宽度和高度对进出口压损和中心截面平均速度影响较大,同时横截面积收缩比例太大会导致流场紊乱和回流现象,从而为合理设计局部横截面积收缩的电磁流量测量管道提供了理论依据.     

一种基于图像处理的半导体刻线边缘粗糙度的确定方法

随着半导体技术的不断发展 ,半导体刻线临界尺寸不断降低 ,线边缘粗糙度对元件性能的影响越来越大。本文综合运用图像处理中的直方图图像描述、阈值化描述以及Sobel算子提取半导体刻线的边缘 ,并根据边缘计算了粗糙度。最后给出了一个样本的实际测量结果并加以分析 ,结果表明这一方法可以用来测量和分析临界尺寸刻线边缘粗糙度     

DFB激光器调谐过程的动态线宽特性

为了获取分布反馈(DFB)激光器在调谐过程的动态线宽特性,提出一种基于光纤延时自外差的激光动态线宽测量方法,对于激光器线宽和测量原理做了理论分析.对商品化DFB激光器的实验结果表明:在整个电流工作范围内,激光动态线宽为20.38～4.73 MHz;工作电流为最大电流的0.58～0.66倍时,激光器的动态线宽最窄,激光器动态线宽最佳工作电流为最大电流的0.5～0.8倍.     

测量激光线宽的一种新装置

介绍了一种新的仅用一台激光器测定激光线宽或频率稳定的测量方法，用稳定的无源腔透过曲线腰处斜率将激光的频率扰动转为电压扰动。用所研制的测量装置对自制的边疆波染料激光频率的线宽和频率稳定性进行了测量。     

Extreme ultra-violet resists development concepts and performances

Recently published experimental results indicate that current extreme ultra-violet lithography (EUVL) patterning process seems to be very hard to meet the device manufacturing specification goals, such as resolution, line-width roughness, and sensitivity (RLS) simultaneously. To overcome trade-off limitations between RLS performances of resist, we have approached the problem in several ways. Regarding materials, to make a uniform resist film we applied living radical polymerization and purification to obtain evenly interacting polymer chains. To obtain perfectly miscible resist components, such as polymer, photo acid generator (PAG) and quencher, we have optimized their structures to have similar polarity range. Acid diffusivity factors are also controlled by the resist components properties, including polymer T(g) and photo-acid polarity. In EUVL process, we applied surfactant rinse process to reduce line-width roughness and pattern collapse. In this paper, we discuss the performance of our EUV according to our material development concepts, that is, resist film homogeneity and acid diffusion control in order to meet the device manufacturing specification goals, such as resolution, line-width roughness (LWR), and sensitivity.     

AFM线宽测量不确定度的分析与评定

详细分析了P47型原子力显微镜线宽测量不确定度的来源,给出了基于几何形状的线宽测量模型,提出了线宽测量不确定度的评定路线和方法。确定了探针针尖引起的测量不确定度是AFM线宽测量不确定度的主要来源,并对其进行了定量分析。普通Si3N4探针针尖引起的不确定度分量约占线宽总量的5%。     

Smooth and conductive DNA-templated Cu₂O nanowires: growth morphology, spectroscopic and electrical characterization

DNA strands have been used as templates for the self-assembly of smooth and conductive cuprous oxide (Cu?O) nanowires of diameter 12-23 nm and whose length is determined by the template (16 μm for λ-DNA). A combination of spectroscopic, diffraction and probe microscopy techniques showed that these nanowires comprise single crystallites of Cu?O bound to the DNA molecules which fused together over time in a process analogous to Ostwald ripening, but driven by the free energy of interaction with the template as well as the surface tension. Electrical characterization of the nanowires by a non-contact method, scanned conductance microscopy and by contact mode conductive AFM showed the wires are electrically conductive. The conductivity estimated from the AFM cross section and the zero-bias conductance in conductive AFM experiments was 2.2-3.3 S cm?1. These Cu?O nanowires are amongst the thinnest reported and show evidence of strong quantum confinement in electronic spectra.     

Solvent-mediated repair and patterning of surfaces by AFM

A tip-based approach to shaping surfaces of soluble materials with nanometer-scale control is reported. The proposed method can be used, for example, to eliminate defects and inhomogeneities in surface shape, repair mechanical or laser induced damage to surfaces, or perform 3D lithography on the length scale of an AFM tip. The phenomenon that enables smoothing and repair of surfaces is based on the transport of material from regions of high to low curvature within the solution meniscus formed in a solvent-containing atmosphere between the surface in question and an AFM tip scanned over the surface. Using in situ AFM measurements of the kinetics of surface remodeling on KDP (KH(2)PO(4)) crystals in humid air, we show that redistribution of solute material during relaxation of grooves and mounds is driven by a reduction in surface free energy as described by the Gibbs-Thomson law. We find that the perturbation from a flat interface evolves according to the diffusion equation, where the effective diffusivity is determined by the product of the surface stiffness and the step kinetic coefficient. We also show that, surprisingly, if the tip is instead scanned over or kept stationary above an atomically flat area of the surface, a convex structure is formed, with a diameter that is controlled by the dimensions of the meniscus, indicating that the presence of the tip and meniscus reduces the substrate chemical potential beneath that of the free surface. This allows one to create nanometer-scale 3D structures of arbitrary shape without the removal of substrate material or the use of extrinsic masks or chemical compounds. Potential applications of these tip-based phenomena are discussed.     

原子力显微镜的双探针接触测量研究

为实现双探针原子力显微镜的探针对准,用探针A对探针B的成像进行了深入的研究。首先对音叉探针进行有限元仿真,分析探针的机械特性。其次用锁相放大器获取探针的幅度和频率信号,让探针接近样品（硅片）以获得系统的分辨率。最后在YOZ平面用探针A对探针B扫描成像,逐步缩小扫描范围并同时减小扫描步进。实验表明,探针的分辨率优于1 nm,双探针对准精度可达5 nm。     

Observation of Si pattern sidewall using inclination atomic force microscope for evaluation of line edge roughness

Inclination atomic force microscope (AFM) imaging has been studied on the possibility to observe a pattern sidewall in contact mode or digital probing (step-in) mode for a line edge roughness (LER) or line width roughness (LWR). Analysis of the AFM tip bending and slipping indicates that it is serious problem to measure and control very fine patterns within an error of less than 1 nm in contact of the tip on the steep slop of the pattern, and it is very important directly to observe the sidewall at inclination angle. In experiments using pyramidal tip and steep Si pattern with about 90 degrees slop, it has demonstrated that the inclination angle is 35-40 degrees for faithful observation of the sidewall. We have observed the etched strip lines on the sidewall with a width of about 100 nm and a depth of about 6.4 nm. We have demonstrated that the inclination AFM is very useful for evaluation of the LER or LWR.     

Open die hot pressing of yttrium iron garnet

A relatively simple and more economical process of open die hot pressing has been employed in preparing high density yttrium iron garnet samples of fine grain size (～ 1–2 μM). The samples have been investigated for the microstructure dependent spinwave line-width (ΔH_k) and FMR line-width (ΔH). The values of ΔH_k and ΔH are in fair agreement with the samples having the same grain size but prepared by the conventional hot pressing using refractory dies.     

用于标定镀膜机的膜厚样板的制备和测量

镀膜在国民经济生活中得到广泛应用。影响镀膜性能的一个主要参数是膜层在整个基片上的厚度均匀性。利用挡板在基片上多个区域沉积台阶,测量台阶高度的差值用于分析膜厚的均匀性。通过集成非接触聚焦式测头的纳米测量机进行测量,针对镀膜产品上各个特殊的曲面台阶,以参差平方和为标准,用基底无台阶区域的曲线模型拟合台阶底部曲线,参考ISO 5436-1：2000的台阶评价方法,对镀膜基片上多台阶进行了评价。该方法可以用于镀膜机的验收。