α粒子活化分析法测定铜中痕量氧

本工作用α粒子活化分析法测定铜中氧含量,通过化学分离,可测定低于1×10~(-6)g/g的氧含量。这种方法还能消除表面氧沾污的影响。 1.实验 (1) 核反应 α粒子与氧的核反应为:~(16)O(α,d)~(16)F E_(th)=20.4MeV;~(16)O(α,pn)~(18)F E_(th)=23.2MeV;~(16)O(α,2n)~(18)Ne(?)~(18)FE_(th)=29.7MeV。~(18)F是正电子发射体,半衰期为109.7分钟。 α粒子与铜及铜中的杂质神、锑反应产生的放射性同位素为~(61)Cu、~(65)Zn、~(66)Ga、~(68)Ga、~(76)Br、~(77)Br和     

通过~(12)C(~(11)B,~7Li)~(16)O反应研究~(12)C(α,γ)~(16)O天体物理S_(E2)因子

正~(12)C(α,γ)~(16)O被认为是最重要的核天体物理反应之一。作为3α反应合成~(12)C后的后续反应,该反应强烈影响着宇宙中碳氧同位素(主要为~(12)C和~(16)O)的丰度比,而这两种同位素是可观测宇宙中丰度第4和第3高的同位素。本工作通过测量~(12)C(~(11)B,~7Li)~(16)O反应,导出6.917MeV 2~+阈下共振的约化α宽度,并根据约化α宽度,导出~(12)C(α,γ)~(16)O在伽莫夫窗口内的天体物理S_(E2)因子。本实验在中国原子能科学研究院的HI-13串列加速器上进行。采用束流能量为50 MeV的~(11)B束流,对~(12)C(~(11)B,~7Li)~(16)O反应~(16)O 6.917 MeV激     

用光学模型和豪泽-费许巴赫理论计算中子与~(10)B,~(11)B的反应截面

本文用光学模型和豪泽-费许巴赫理论对中子与~(10)B、~(11)B的反应截面作了计算。得到了9.72MeV中子对~(10)B和9.97,12.06,14.10,18.12MeV中子对~(11)B反应的总截面、弹性散射截面与角分布、低激发态的非弹性散射截面与角分布、(n,p)、(n,d)、(n,t)和(n,α)反应的截面与角分布,以及~(11)B(n,α_0)~8Li基态与~(11)B(n,α_1)~8Li第一激发态的分支比。引出了α粒子与短寿命的~8Li核的光学势参数。计算结果与观测值作了比较。     

用光学模型和豪泽-费许巴赫理论计算中子与~(10)B,~(11)B的反应截面

本文用光学模型和豪泽-费许巴赫理论对中子与~(10) B、~(11)B的反应截面作了计算。得到了9.72MeV中子对~(10)B和9.97,12.06,14.10,18.12MeV中子对~(11)B反应的总截面、弹性散射截面与角分布、低激发态的非弹性散射截面与角分布、(n,p)、(n,d)、(n,t)和(n,α)反应的截面与角分布,以及~(11) B(n,α_0)~8Li_(基态)与~(11)B(n,α_1)~8Li_(第一激发态)的分支比。引出了α粒子与短寿命的~8Li核的光学势参数。计算结果与观测值作了比较。     

用14MeV中子活化分析测定甘蔗植株中N、P、K、Si元素的含量

本文介绍用14MeV NAA测定甘蔗植株中N、P、K、Si的方法。N、P、K、Si元素的核反应及核参数请见本选编第88页。 用~(14)N(n,2n)~(13)N反应分析N时,除了扣除P、K的干扰外,还要考虑14MeV中子在C-H-O体系中产生的反冲质子所引起的~(13)C(p,n)~(13)N、~(16)O(p,α)~(13)N次级反应的影响。用~(31)P(n,α)~(28)Al反应分析P时,要考虑扣除~(28)Si(n,p)~(28)Al反应的影响。用~(39)K(n,2n)~(38)K反应(2.160MeV γ射线),~(29)Si(n,p)~(29)Al反应     

束流漂移对硅条探测器阵列测量的影响

为研究束流漂移对结构紧凑、覆盖立体角较大的硅条探测器阵列测量的影响,利用蒙特卡罗方法,模拟了不同方向、不同大小的束流漂移对熔合蒸发残余核α衰变和卢瑟福散射角分布的影响,表明束流漂移距离小于3.0 mm时,探测器阵列的对称性能将计数误差控制在10%以下。开展了25 MeV和40 MeV ~6Li+~(209)Bi体系的实验测量,利用监视器数据研究了束流漂移的情况,结果表明,所有轮次的束流漂移均未超过3.0 mm。对束流漂移进行修正后,用3种不同的立体角刻度方法得到了弹性散射角分布,感兴趣的40 MeV数据与文献数据基本一致。     

~(20)Na β-γ-α奇异衰变模式研究

正~(20)Na的半衰期为0.448s,衰变能为13.887MeV,基态的自旋宇称为2~+,同位旋T=1,主要衰变到~(20)NeT=0或1的1~+,2~+和3~+态。因为在核结构和核天体物理方面的重要性,20Ne分离阈(Sα=4.730MeV)以上共振能级的性质一直受到广泛的关注。最近芬兰IGISOL分离器上~(20)Na衰变实验建立的衰变纲图如图1所示。这个实验只测量了缓发α,图1中10.274→5.621MeV和9.873→5.621MeVγ跃迁都来自早期不同类型的核反应研究,如~(16)O(α,γ)Ne等。根据选择定则,~(20)Na主要衰变到子核~(20)Ne的1~+、2~+和3~+态。从图1可看到,因为不满足角动量守恒,~(20)Ne的1~+和3~+态无法直接发射α到~(16)O     

14.1 MeV中子与~9Be相互作用产生的次级中子能谱

(Ⅰ)是弹性散射;(Ⅱ)是非弹性散射。γ退激反应道(Ⅱ.4)的几率很小,非弹性散射基本上都发展成反应道(Ⅱ.1)、(Ⅱ.2)或(Ⅱ.3),都属于(n,2n)反应。总之,14.1MeV中子与~9Be作用产生次级中子的反应,除了弹性散射和极弱的(n,n’γ)分支以外,都是~9Be(n,2n)2α四体反应。在中子能谱上,除了弹性散射峰和非弹性散射峰以外,就是由级联衰变或多体崩裂过程产生的连续谱。     

用14MeV中子活化分析测定几种作物种子中粗蛋白质的含量

以14MeV中子轰击样品,产生~(14)N(N,2n)~(13)N核反应,测量β~ 衰变过程中放出的0.511MeV峰计数,即求得氮的含量。再用转换因子6.25,得到样品中粗蛋白质含量。 1.原理 快中子轰击样品后,由于样品中含有大量的碳、氢、氧元素,快中子在碳氢化合物中与氢核碰撞,产生的反冲质子与碳、氧产生~(13)C(p,n)~(13)N和~(16)O(p,α)~(13)N核反应,它们都产生~(13)N核素,干扰氮的测定。 我们采用草酸铵作为氮的标准样品,因为它具有与样品相同反冲质子引起的“本底”。     

重离子活化分析

我所曾采用重离子活化法测定空气中的铅,灵敏度达10~(-9)克。应用重离子束的特点是对某一靶核能产生更多的核反应和获得较高的产率来探测更低含量的元素,从而提高了方法的灵敏度,如测定氮,采用10MeV质子,通过核反应~(14)N(P,α)~(11)C,探测极限为0.001ppm,而采用13.5MeV ~9Be,通过核反应~(14)(~9Be,αn)~(13)F,探测极限即可提高到0.0005ppm。轻粒子活     

Investigations of thin films on GaAs using the proton resonant scattering technique

We have characterized a number of thermally stable thin film/GaAs systems including thin films of refractory metal suicides and nitrides as well as dielectric films on GaAs substrates using a MeV proton scattering technique. Thin films of tungsten suicides, zirconium nitride and silicon dioxide on GaAs substrates are investigated. The enhanced proton scattering cross sections of nitrogen, silicon and oxygen at their corresponding resonant energies enable us to accurately measure the compositions of these films. The advantages and disadvantages of this technique regarding depth resolution, accessible depth, and mass resolution compared to the conventional Rutherford backscattering spectrometry for thin film analysis are discussed.     

Backscattered electrons from surface films deposited on bulk targets: A comparison between computational and experimental results

A Monte Carlo code is described, validated, and utilized to calculate the backscattering coefficient from surface layers of Pd deposited on bulk targets of Si. A quantitative evaluation of the backscattering coefficient as a function of the over-layer thickness is provided, as well as a comparison of the simulated results with experimental data concerning Pd thin films with known thicknesses.     

Determination of stoichiometry in silicon carbide materials using elastic backscattering spectrometry

Elastic backscattering spectrometry (EBS) was performed on SiC materials, using ⁴He particles at energies ranging from 2 to 4 MeV, in order to establish the energy values that lead to an accurate measurement of the Si/C ratio. Analysis of the random yield of “bulk” SiC single crystals indicates that energy values of 3.25 and 3.75 MeV are the most suitable for chemical composition determination; backscattering yield of carbon is enhanced compared to the yield measured at 2 MeV, while the excitation of strong resonances above 3.75 MeV are suppressed. Random backscattering yield measurements were then carried out at an energy of 3.25 MeV on unhydrogenated SiC thin films grown on Si(1 0 0), by pulsed laser deposition, at different substrate temperatures. The Si and C atomic concentrations in the films were determined with an uncertainty of 1% and little interference from the underlying substrate. The films were found to be stoichiometric with a Si/C ratio of 1.03 ± 0.05, independent of deposition temperature, which indicates that the films were grown under congruent ablation conditions. The analysis proved to be applicable to both amorphous and crystalline SiC layers, as confirmed by the results obtained for films deposited at 400 and 950 °C, respectively.     

Thin film analysis by low energy proton induced X-ray emission

A 100 keV proton beam has been used for measuring the thickness of thin films from the proton energy loss determined by using the energy dependence of the yield of X-rays emitted from a gold backing.Comparison between the proposed method and Rutherford backscattering is shown for erosion, thermal interdiffusion or ion beam mixing experiments with carbon and aluminum-gold films.     

Toward high accuracy in channeling Rutherford backscattering spectrometry analysis

Channeling Rutherford backscattering spectrometry (RBS) has been widely used to quantitatively analyze displacements in monocrystalline solid state thin films. Its accuracy, however, relies on the approach of separating yields contributed by channeled components and by dechanneled components. In this study, efforts have been made to increase accuracy through three major approaches: first, we have considered the stopping power difference between channeled and non-channeled components; second, we have proposed a mathematical formula to describe a smooth transition from single scattering to multiple scattering in describing dechanneling of analyzing beams as a function of displacements; third, we have used an iterative approach to extract yields from dechanneling components without using any predetermined dechanneling cross sections. These novel approaches are expected to increase accuracy in channeling RBS analysis.     

RBS analysis of AlxGa1−xAs layers using 30 MeV 16O ions

A study of backscattering analysis of Al_xGa_1?xAs layers using ¹⁶O ions at 30 MeV is described.We have found that by using calibration samples of well defined composition, we can use the technique to determine the composition of Al_xGa_1?xAs thin layers to an accuracy within a few percent. The method can resolve the composition of the first 1 μm of a thin layer. By using sample tilting, films of 300 nm thickness on top of a GaAs substrate can be analysed.     

Depth resolution calculations for heavy-ion microbeam RBS analysis

A detailed study has been made on the use of MeV heavy ions (Z₁ = 6–8) for microbeam Rutherford backscattering (RBS) analysis, to improve the depth resolution of this technique. The algorithm for determination of the depth resolution was created and applied to the Zagreb microbeam facility. Theoretical estimates of depth resolution for C and O ion RBS analysis of thin oxide films and semiconductors, using annular silicon surface barrier detector (SSBD), are compared to those for proton backscattering analysis. Depth resolution in certain cases may be improved by increasing the heavy-ion energy. Therefore, by the proper choice of the heavy ion and the heavy-ion energy, the depth resolution may be improved, maintaining the efficiency of the RBS method.     

PROGRESS IN ION BEAM ANALYSIS AT FUDAN UNIVERSITY

Progres in ion beam analysis at Fudan University in the recent years is briefly reviewed. Presented as examples of the research activities performed in this field are the following projects: (1) Nuclear potential resonance scattering of 6.25 MeV and 4.25 MeV helium ions for simultaneous compositional analysis of carbon and oxygen in a Mylar, a SnInO, and some other film samples: (2) Determination of stoichiometry of a high-temperature superconducting Y-Ba-Cu-O sample by backscattering of 8.8 MeV helium ions; (3) Backscattering and channeling analysis of multilayered structures periodically consisting of layers of pure Si and alternate layers of Ge and Si, grown on (100) Si substrates by molecular beam epitaxy: (4) Studies of surface structure of Al(100) by the use of MeV ions backscattering and channeling surface peak: and (5) MeV ion microbeam analysis and the use of PIXE method in DNA study. etc.     

Complementary use of ion beam elastic backscattering and recoil detection analysis for the precise determination of the composition of thin films made of light elements

Rutherford backscattering spectrometry (RBS) is a well known powerful technique to obtain depth profiles of the constituent elements in a thin film deposited on a substrate made of lighter elements. In its standard use the probing beam is typically 2 MeV He. Its capabilities to obtain precise composition profiles are severely diminished when the overlaying film is made of elements lighter than the substrate. In this situation the analysis of the energy of the recoiled element from the sample in the elastic scattering event, the ERDA technique may be advantageous. For the detection of light elements it is also possible to use beams at specific energies producing elastic resonances with these light elements to be analyzed, with a much higher scattering cross sections than the Rutherford values. This technique may be called non-RBS. In this work we report on the complementary use of ERDA with a 30 MeV Cl beam and non-RBS with 1756 keV H ions to characterize thin films made of boron, carbon and nitrogen (BCN) deposited on Si substrates.     

Depth profiling of heavy-ion-mixed TiN films

A survey is given on the modifications of 30–300 nm thin TiN films on various substrates under high-fluence irradiation with 80–700 keV Ar, Kr and Xe ions. In particular, the effects of sputtering, interface mixing and blister formation were investigated. The results were obtained by combining several depth-profiling techniques, such as resonant nuclear reaction analysis (RNRA), Rutherford backscattering spectroscopy (RBS) and proton-induced X-ray emission (PIXE). Scanning electron microscopy and adhesion tests were also applied to the films. Optimal interface mixing parameters are proposed on the basis of the measured sputtering and mixing rates.