Growth of thin Ag films produced by radio frequency magnetron sputtering

Thin Ag films in the thickness range D = 14–320 nm were deposited by radio frequency magnetron sputtering on glass substrates at room temperature inside a vacuum chamber with base pressure of about 5 × 10^− 6 Pa. The growth of the films was studied via X-ray diffraction and atomic force microscopy experiments. The two techniques are complementary and give us the opportunity to study the surface roughness, the statistical distribution and the average value of the grain size, as well as the texture of the samples. It is shown that the film roughness increases negligibly within the first 60 atomic layers of growth. The thicker films (D 300 nm) develop a nanocrystalline structure with a root mean square roughness of about 2.5 nm. The grain size evolves linearly with the thickness from 9.4 nm at D = 54 nm to 31.6 nm at D = 320 nm.     

Fabrication and characterization of Fe3O4 thin films deposited by reactive magnetron sputtering

Fe-O thin films with different atomic ratio of iron to oxygen were deposited on glass and thermally oxidized silicon substrates at temperatures of 300, 473 and 593 K, by reactive magnetron sputtering in Ar+O₂ atmosphere. The composition and structure of the thin films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and electrical resistivity. It was found from XRD that with increasing the oxygen partial pressure in the working gas, the crystalline structure of the Fe-O films deposited at the substrate temperature of 473 K gradually changed from α-Fe, amorphous Fe-O, Fe₃O₄, γ-Fe₂O₃ to Fe_21.34O₃₂. The structure and chemical valence of the Fe₃O₄ films were analyzed by electron microscopy and XPS, respectively.     

Growth of FeSb2 thin films by magnetron sputtering

The detailed growth of FeSb₂ films formed on quartz (0001) substrates by magnetron sputtering is reported. FeSb₂ films with different orientations and compositions can be produced by adjusting the Ar working gas pressure and the substrate temperature. By employing FeSb₂ thin layers produced at different substrate temperatures as templates, < 101>-, < 120>- and < 002>-textured FeSb₂ films were produced under identical growth conditions. The thermoelectric properties of film samples grown at different temperatures were measured and the effects of Sb and FeSb impurities were investigated.     

New transparent conducting MgIn2O4---Zn2In2O5 thin films prepared by magnetron sputtering

New materials for a transparent conducting oxide film are demonstrated. Highly transparent Zn₂In₂O₅ films with a resistivity of 3.9 × 10⁻⁴ Ω cm were prepared on substrates at room temperature using a pseudobinary compound powder target composed of ZnO (50 mol.%) and In₂O₃ (50 mol.%) by r.f. magnetron sputtering. MgIn₂O₄---Zn₂In₂O₅ films were prepared using MgIn₂O₄ targets with a ZnO content of 0–100 wt.%. The resistivity of the deposited films gradually decreased from 2 × 10⁻³ to 3.9 × 10⁻⁴ Ω cm as the Zn/(Mg + Zn) atomic ratio introduced into the films was increased. The greatest transparency was obtained in a MgIn₂O₄ film. The optical absorption edge of the films decreased as the Zn/(Mg + Zn) atomic ratio was increased, corresponding to the bandgap energy of their materials. It was found that the resistance of the undoped Zn₂In₂O₅ films was more stable than either the undoped MgIn₂O₄, ZnO or In₂O₃ films in oxidizing environments at high temperatures.     

Luminescent properties of Gd2Ti2O7: Eu phosphor films prepared by sol-gel process

Gd₂Ti₂O₇: Eu³⁺ thin film phosphors were fabricated by a sol-gel process. X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 800 °C and the crystallinity increased with the elevation of annealing temperatures. Uniform and crack free phosphor films were obtained, which mainly consisted of grains with an average size of 70 nm. The doped Eu³⁺ showed orange-red emission in crystalline Gd₂Ti₂O₇ phosphor films due to an energy transfer from Gd₂Ti₂O₇ host to them. Both the lifetimes and PL intensity of the Eu³⁺ increased with increasing the annealing temperature from 800 to 1000 °C, and the optimum concentrations for Eu³⁺ were determined to be 9 at.%. of Gd³⁺ in Gd₂Ti₂O₇ film host.     

Impedance spectroscopy study of RuO2/SrTiO3 thin film capacitors prepared by radio-frequency magnetron sputtering

Thin film capacitors of SrTiO₃ with RuO₂ top and bottom electrodes on Si substrates were prepared by radio-frequency magnetron sputtering at substrate temperatures 500 and 700 °C and at various oxygen partial pressures. The thickness of the dielectric layer was varied between 200 and 900 nm. The impedance spectra of these samples could be interpreted with an equivalent circuit comprising a resistance and two RC-parallel elements in series. The dielectric permittivity _r of the bulk grains, as extracted from the high-frequency semicircle in the Cole–Cole plot, was in the range 300–600. High oxygen contents lead to high values of _r but also increase the grain boundary resistance.     

Enhanced photocatalytic activity of silver nanoparticles modified TiO2 thin films prepared by RF magnetron sputtering

Ag-TiO₂ nanostructured thin films with silver volume fraction of 0–40% were prepared by RF magnetron sputtering. The microstructure, surface topography, and optical properties of the films were characterized by X-ray diffractometer, transmission electron microscope, and ultraviolet–visible spectrophotometer. Photocatalytic activity of the films was evaluated by light-induced degradation of methyl orange (C₁₄H₁₄N₃NaO₃S) solution using a high pressure mercury lamp as lamp-house. The relation of photocatalytic activity and silver content was studied in detail. It is found that silver content influences microstructure of TiO₂ thin films, and silver in the films is metallic Ag (Ag⁰). Photocatalytic activity of the films increases with increasing silver content up to 5 vol.% Ag and then decreases to values significantly still bigger than that of pure TiO₂ thin films. Silver nanoparticles significantly enhance the photocatalytic activity of TiO₂ films. The better separation between electrons and holes on silver modified TiO₂ thin films surface allowed more efficiency for the oxidation and reduction reactions. The enhanced photocatalytic activity was mainly attributed to the decrease of energy gap of the films and the increase of oxygen anion radicals O₂⁻ and reactive center of surface Ti³⁺ on silver modified TiO₂ thin films surface.     

Preparation and characterization of Sr4Al2O7:Eu, Eu phosphors

A new composition of red strontium aluminate phosphor (Sr₄Al₂O₇:Eu³⁺, Eu²⁺) is synthesized using a solid state reaction method in air and in a reducing atmosphere. The investigation of firing temperature indicates that a single phase of Sr₄Al₂O₇ is formed when the firing temperature is higher than 1300 °C and that a Sr₃Al₂O₆ phase is formed as the main peak below 1300 °C. The effects of firing temperature and doping concentration on luminescent properties are investigated. Sr₄Al₂O₇ phosphors exhibit the typical red luminescent properties of Eu³⁺ and Eu²⁺. A comparison photoluminescence study with Sr₃Al₂O₆ phosphor shows that Sr₄Al₂O₇ has higher emission intensity than Sr₃Al₂O₆ as a result of the higher optimum doping concentration of Sr₄Al₂O₇ phosphor.     

Deposition of titanium/titanium oxide clusters produced by magnetron sputtering

Titanium clusters of nanometer sizes are produced by magnetron sputtering with subsequent aggregation in an argon gas flow. The produced Ti clusters are directed and deposited on a silicon substrate. Deposited films are analyzed by X-ray photoelectron spectroscopy in order to obtain the chemical composition and by atomic force microscopy and X-ray reflection methods to obtain information about the film structure. Experiments were carried out at different temperatures of the walls of the magnetron chamber. The size and the flux of clusters from the magnetron chamber are obtained by the analysis of the substrate surface with deposited clusters. It is found that the cluster parameters strongly depend on the temperature of the magnetron chamber walls. Molecules of titanium oxides may be nuclei of condensation and accelerate the nucleation process. A theoretical analysis based on experimental results is presented. It allows us to describe various stages of cluster evolution from their formation up to the deposition on the substrate and provides estimations for parameters of the processes involving clusters.     

Long afterglow phosphorescent characteristics of BaAl2O4:Eu,Dy films

BaAl₂O₄:Eu,Dy (BAO) films have been fabricated on Si substrate by laser ablation, and their fundamental optical property and afterglow characteristics are discussed in comparison with the SrAl₂O₄:Eu,Dy (SAO) films. The intense green emission near 500 nm that originates from 5d to 4f transition in Eu²⁺ ions was clearly observed from the BAO films. This photoluminescence peak was at a shorter wavelength than that of the SAO films (λ = 520 nm). The afterglow intensity from the BAO films disappeared within a few minutes whereas that of the SAO films lasts over 20 min. The hole-trap depth (E_t) created by Dy as the auxiliary activators, which strongly affects the afterglow characteristics, was estimated on the basis of the thermally stimulated luminescence (TSL) result. The TSL glow curve for BAO films showed two broad peaks at 320 K and 450 K. The calculated E_t for each peak was 0.2 eV (for the 320 K peak) and 1.2 eV (for the 450 K peak). On the other hand, E_t = 0.5 eV was obtained from the SAO films. The hole-trap depths of the BAO film are either too shallow or too deep to affect the afterglow characteristics at room temperature.     

Persistent luminescence of Eu and Dy doped barium aluminate (BaAl2O4:Eu,Dy) materials

Polycrystalline Eu²⁺ and Dy³⁺ doped barium aluminate materials, BaAl₂O₄:Eu²⁺,Dy³⁺, were prepared with solid state reactions at temperatures between 700 and 1500 °C. The influence of the thermal treatments on the stability, homogeneity and structure as well as to the UV-excited and persistent luminescence of the materials was investigated by X-ray powder diffraction, SEM imaging and infrared spectroscopies as well as by steady state luminescence spectroscopy and persistent luminescence decay curves, respectively. The IR spectra of the materials prepared at 250, 700, and 1500 °C follow the formation of BaAl₂O₄ composition whereas the X-ray powder diffraction of compounds revealed how the hexagonal structure was obtained. The morphology of the materials at high temperatures indicated important aggregation due to sintering. The luminescence decay of the quite narrow Eu²⁺ band at ca. 500 nm shows the presence of persistent luminescence after UV irradiation. The dopant (Eu²⁺) and co-dopant (Dy³⁺) concentrations affect the crystallinity and luminescence properties of the materials.     

Nanocrystalline SnO2 and Au:SnO2 thin films prepared by direct current magnetron reactive sputtering

Nanocrystalline pure and gold doped SnO₂(Au:SnO₂) films were prepared on unheated glass substrates by dc magnetron reactive sputtering and, subsequently, the as deposited films were annealed in air. The films structure, surface morphology, photoluminescence, electrical and optical properties were investigated. After annealing the as deposited SnO₂ films, crystallinity increased and the surface roughness decreased. The intensity of PL peaks increases sharply with the annealing temperature. The optical transmittance of the films was around 89% after annealing the as deposited SnO₂ films at 450 °C. The as deposited Au:SnO₂ films show better crystallinity than the as deposited SnO₂ films, the average grain size was around 4.4 nm. The emission peaks of Au:SnO₂ films are slightly blue shifted as compare to undoped SnO₂ films. The Au:SnO₂ films show the lowest electrical resistivity of 0.001 Ωcm with optical transmittance of 76%, after annealing at 450 °C.     

Transparent conductive In2O3:Mo thin films prepared by reactive direct current magnetron sputtering at room temperature

An amorphous transparent conductive oxide thin film of molybdenum-doped indium oxide (IMO) was prepared by reactive direct current magnetron sputtering at room temperature. The films formed on glass microscope slides show good electrical and optical properties: the low resistivity of 5.9 × 10^− 4 Ω cm, the carrier concentration of 5.2 × 10²⁰ cm^− 3, the carrier mobility of 20.2 cm² V^− 1 s^− 1, and an average visible transmittance of about 90.1%. The investigation reveals that oxygen content influences greatly the carrier concentration and then the photoelectrical properties of the films. Atomic force microscope evaluation shows that the IMO film with uniform particle size and smooth surface in terms of root mean square of 0.8 nm was obtained.     

Structural,electrical and photoluminescence properties of ZnO:Al network films grown on nanochannel Al2O3 substrates by direct current magnetron sputtering with an oblique target

ZnO:Al network films were grown on nanochannel Al₂O₃ substrates at 300 K by direct current magnetron sputtering with an oblique target. The film thicknesses are 60 nm, 160 nm and 190 nm. The holes of the network films diminish with increasing film thickness. For the 60-nm thick film, the network is formed by connecting grains. For the 160-nm and 190-nm thick films, however, the network is formed by connecting granules. The granules consist of many small grains. All the network films have a wurtzite structure. The 60-nm and 160-nm thick network films mainly have a [1 0 1] orientation in the film growth direction while the 190-nm thick network film grows with a random crystallographic orientation. A temperature dependence of the resistance within 160–300 K reveals that the network films exhibit a semiconducting behavior and their carrier transport mechanism is thermally activated band conduction. Room temperature photoluminescence spectra for wavelengths between 300 nm and 700 nm reveal a violet emission centered at 405 nm for the 60-nm thick network film and a blue emission centered at 470 nm for both the 160-nm and the 190-nm thick network films. Annealing decreases the resistivity of the network film.     

Structural and morphological characterization of Pr and Er-containing SiO2-P2O5 sol-gel thin films

Present work is focused on obtaining and characterization of sol-gel thin films belonging to SiO₂-P₂O₅-Er₂O₃ (I) and SiO₂-P₂O₅-Pr₂O₃ (II) systems. The films have been obtained by spin coating technique for three rotation speeds: 2000, 3500 and 5000 rpm. The deposition of the films was performed at different periods of time, i.e. 24 h, 96 h, 120 h, 144 h and 168 h after instant preparation of the precursor sols. FTIR (Fourier transform infrared spectroscopy) and Raman characterization aimed at investigating the structural changes that occurred in silicophosphate network in dependence on the spin rate of the substrate as well as on the time period elapsed since the sol preparation till the deposition day. FTIR spectra recorded in the 400-4000 cm⁻¹ range revealed Si-O-Si, P-O-P and Si-O-P vibration modes and optical phonons specific for OH units. Raman spectra collected in the 100-4000 cm⁻¹ range put in evidence stretching, bending and mixed vibration modes specific for silicophosphate network as well as rare-earth ion peaks specific to certain electronic transitions. Morphological investigation made by AFM (atomic force microscopy) on Er and Pr-doped silicophosphate sol-gel films evidenced specific features depending on the parameters mentioned above and SEM (scanning electron microscopy) analysis revealed micron sphere structural units, exfoliation of the films and micro cracks.     

Preparation and colossal magnetoresistance in a trilayer La0.67Sr0.33MnO3/La0.75MnO3/La0.67Sr0.33MnO3 device by dc magnetron sputtering

Epitaxial trilayer films of La_0.67Sr_0.33MnO₃ (LSMO)/La_0.75MnO₃ (L0.75MO)/La_0.67Sr_0.33MnO₃ (LSMO) have been prepared on (0 0 1) oriented LaAlO₃ substrates by dc magnetron sputtering. The structure and MR are studied. All as-deposited trilayer films exhibit a semiconductor to metal transition at temperature ranging from 116 to 185 K. The MR is also shown to be dependent on the thickness of the middle oxide layer. A maximum MR value of 32% (ΔR/R₀) has been obtained at 132 K under 0.4 T magnetic field for a LSMO (300 nm)/L0.75MO (70 nm)/LSMO (300 nm) trilayer film. The MR of trilayer film prefers to that of both LSMO and L0.75MO single layer films.     

Effect of the microwave oven on structural, morphological and electrical properties of SrBi4Ti4O15 thin films grown on Pt/Ti/SiO2/Si substrates by a soft chemical method

Thin films of SrBi₄Ti₄O₁₅ (SBTi), a prototype of the Bi-layered-ferroelectric oxide family, were obtained by a soft chemical method and crystallized in a domestic microwave oven. For comparison, films were also crystallized in a conventional method at 700 °C for 2 h. Structural and morphological characterization of the SBTi thin films were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. Using platinum coated silicon substrates, the ferroelectric properties of the films were determined. Remanent polarization P_r and a coercive field E_c values of 5.1 μC/cm² and 135 kV/cm for the film thermally treated in the microwave oven and 5.4 μC/cm² and 85 kV/cm for the film thermally treated in conventional furnace were found. The films thermally treated in the conventional furnace exhibited excellent fatigue-free characteristics up to 10¹⁰ switching cycles indicating that SBTi thin films are a promising material for use in non-volatile memories.     

Size effects of polycrystalline lanthanum modified Bi4Ti3O12 thin films

The film thickness dependence on the ferroelectric properties of lanthanum modified bismuth titanate Bi_3.25La_0.75Ti₃O₁₂ was investigated. Films with thicknesses ranging from 230 to 404 nm were grown on platinum-coated silicon substrates by the polymeric precursor method. The internal strain is strongly influenced by the film thickness. The morphology of the film changes as the number of layers increases indicating a thickness dependent grain size. The leakage current, remanent polarization and drive voltage were also affected by the film thickness.     

Color control of emissions from rare earth-co-doped La2O3:Bi phosphor thin films prepared by magnetron sputtering

Multicolor photoluminescence (PL) and electroluminescence (EL) were observed from developed Bi- and rare earth (RE)-co-doped La₂O₃ (La₂O₃:Bi,RE) phosphor thin films. The phosphor thin films were prepared with various contents of co-doped RE, such as Dy, Er, Eu, Tb and Tm, by a combinatorial radio frequency magnetron sputtering deposition method. The obtainable luminance in EL and PL intensities changed considerably as the kind and content of RE were varied. Color changes from blue and blue-green to various colors in PL and EL emissions, respectively, were obtained in postannealed La₂O₃:Bi,RE phosphor thin films: films prepared by co-doping Bi at a constant content with various REs at varying levels of content. However, all of the observed emission peaks in PL and EL from La₂O₃:Bi,RE phosphor thin films were assigned to either the broad emission originating from the transition in Bi³⁺ or the visible emission peaks originating from the transition in the co-doped trivalent RE ion. The difference between PL and EL characteristics in La₂O₃:Bi,RE phosphor thin films is mainly attributed to the difference in the excitation mechanism.     

Growth of flat SrRuO3 (111) thin films suitable as bottom electrodes in heterostructures

Thin film growth of ferroelectric or multiferroic materials on SrTiO₃(111) with a buffer electrode has been hampered by the difficulty of growing flat electrodes on this polar orientation. We report on the growth and characterization of SrRuO₃ thin films deposited by pulsed laser deposition on SrTiO₃(111). We show that our SrRuO₃(111) films are epitaxial and display magnetic bulk-like properties. Films presenting a thickness between 20 and 30 nm are found to be very flat and therefore suitable as bottom electrodes in heterostructures.