宽输入共模电压范围电流检测放大器的研究与设计

针对高端电流检测放大器输入级对宽输入共模电压范围的要求,对宽输入共模电压范围放大器的输入结构开展了研究,提出了一种宽共模输入范围的输入级结构,特点是具有低输入偏置电流,并能兼顾高低共模电平工作的需要.给出了整个电流检测放大器的电路设计.该放大器在1.5μm BCD工艺下设计实现.芯片的测试结果表明,当采用5V单电源供电时,电路的输入共模范围可达0~30V,最大总误差不超过1.67%.     

宽输入共模电压范围电流检测放大器的研究与设计

针对高端电流检测放大器输入级对宽输入共模电压范围的要求,对宽输入共模电压范围放大器的输入结构开展了研究,提出了一种宽共模输入范围的输入级结构,特点是具有低输入偏置电流,并能兼顾高低共模电平工作的需要.给出了整个电流检测放大器的电路设计.该放大器在1.5μm BCD工艺下设计实现.芯片的测试结果表明,当采用5V单电源供电时,电路的输入共模范围可达0~30V,最大总误差不超过1.67%.     

一种新型滞环电流控制电路的设计

传统的滞环电流控制电路通过共基极差分放大器采样电流信号,放大器的偏置电流会对检测电流有较大影响.提出了一种新型滞环电流控制电路,其采用宽共模输入电压范围的比较器结构,电流检测信号从双极型晶体管基极输入,能有效减小对检测电流的影响.该电路在25 V 1.5μm BCD工艺下设计实现,运用在白光LED恒流驱动芯片之中.仿真结果表明该电路的共模输入电压范围为5～25 V,从检测电流吸收的偏置电流不超过308 nA,能较好地完成恒流控制的功能.     

基于单一PMOS差分对的轨到轨输入运算放大器设计

基于国内某CMOS工艺设计了一种单一PMOS差分对的轨到轨输入、恒跨导CMOS运算放大器。输入级电路采用折叠共源共栅结构,通过体效应动态调节输入管的阈值电压扩展共模输入范围到正负电源轨,恒定共模输入范围内的跨导,自级联电流镜有源负载将差分输入转换为单端输出;输出级电路采用AB类结构实现轨到轨输出,线性跨导环确定输出管的静态偏置电流。在5 V电源电压,2.5 V共模电压,1 MΩ负载条件下,经Spectre仿真验证,该运算放大器开环增益为119 dB,相位裕度为58°,共模输入范围为0.0027～4.995 V,共模范围内跨导变化小于3%,实现了轨到轨输入共模范围内的跨导恒定。     

电源自适应Rail-to-Rail CMOS运算放大器

基于CSMC 0.6 μm标准CMOS工艺,实现了一种电源自适应Rail-to-Rail CMOS运算放大器,其输入级从原理上变“被动地“适应低电压为“主动地“要求低电压.当外部电源电压在2.1V到3.2 V变化时,内部电源电压稳定在1.68 V,最大偏差为5.4%.这样,内部电源电压自适应地稳定在“相交条件“,实现了输入级的跨导Gm为常数:在整个共模(CM)电压变化范围内,输入级跨导的最大变化为9%.Rail-to-rail输出级用两个折叠网格和AB类反馈控制结构实现,使输出级的最低电源电压降到Vgs 2Vds,并使输出静态电流最小.     

超低工作电压比较器MAX9100/9101

<正> MAX9100/9101是MAXIM公司新近推出的一种超低工作电压(单电源1V)、低功耗、小尺寸封装的电压比较器。该器件主要特点有:工作电压范围为1.0～5.5V;静态工作电流低,典型值为6μA;宽的输入共模电压范围(0～Vcc-0.2V);输出摆幅接近电源电压;4μs的传播延迟;高的输出驱动能力(MAX9100能输出源电流或灌电流为5mA);过载输入时无输     

一种基于共模稳定电路的单调开关切换的0.6V 10位 1MHz采样率的逐次逼近型模数转换器

本文叙述了一个在0.6V电源电压下用于无线传感网络中的10位逐次逼近型模数转换器（SAR ADC）的设计。这个SAR ADC中的数模转换器（DAC）采用单调开关切换的方式,目的是减小芯片面积和功耗。但是单调开关切换的方式存在共模电压改变引起的比较器失调电压动态变化的问题。由于电源电压仅有0.6V,传统的在动态比较器中使用恒定电流偏置技术的方法不再适用。在本文的设计中,我们提出了一个共模电压稳定电路（common mode stabilizer）可在低电源电压下稳定比较器的输入共模电压,这种方法的有效性得到了仿真和测试的验证。本文设计的SAR ADC采用0.13μm CMOS工艺,测试结果显示在0.6V电源电压和1MHz采样率下,功耗为6.3μW,在奈奎斯特输入频率下信号噪声失真比（SNDR）为51.25 dB,品质因数（FOM）为21 fJ/conversion-step,芯片的核心面积只有120 μm×300 μm。     

轨到轨电压比较器的设计

比较器在模数转换及其他模拟功能模块中都是非常重要的器件,其速度和精度直接影响模块的功能.采用SMIC 0.18 CMOS混合信号工艺,设计了一种轨到轨电压比较器,电路结构主要包括前置放大器、锁存器和输出缓冲电路,此外,采用一种β倍增的自偏置基准电路提供偏置电流.结果表明,在3.3V的供电电压下,提供共模范围为300 mV～3.3 V的信号,可分辨输入信号的最小频率为200 MHz,单级运放相位裕度大于60°,输出信号占空比为40％～60％,比较阈值约为10 mV,输入输出延时小于5 ns,功耗小于18 mW,版图面积小于200 μm× 150 μm.该比较器的失真较小,在整个输入信号范围内有较高的共模抑制比,较大限度地提高了电路的性能.     

用于RFID标签的自适应低压电流模ASK解调器(英文)

针对RFID标签低压工作的要求,设计了一种自适应电流模ASK解调器.通过把电压信号转换为电流信号、采用两级电流峰值保持技术以及泄漏电路等技术提高了解调器的动态检测性能.解调器的工作电源电压为0.6～1.8 V,能对输入载波幅度为250 mV～1.1 V,调制深度为20%～100%的信号进行正确解调.电源电压为1.8 V时,解调器的动态检测范围从80 nA到3.96μA.电路采用0.18 μm CMOS工艺设计并实现.     

一种超宽共模输入范围高性能运算放大器的设计

在分析运算放大器一般输入级电路结构的基础上,文章设计出一种新颖的电路结构以实现运算放大器的超宽共模输入范围,摆脱了电源电压对信号共模电平范围的限制,解决了一般运放输入级中容易出现的输入管饱和问题。电路采用1.6μm的P衬N阱BiCMOS工艺制程,HSPICE仿真结果表明:电源电压为2.7V时,运算放大器的共模电平VCM输入范围为1V～7V,带宽为3MHz(相位裕度72.5),开环增益为62.5dB。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.