Thermal Conductivity of Nano ZnO Doped CaFe2O4

The research objective of this study was to examine whether Zn was an effective doping element for thermal conductivity. Ca_1-xZn_xFe₂O₄ (x = 0.0–0.5) were synthesized by solid state reaction method. The XRD results showed that all samples were mixed phase of CaFe₂O₄ and ZnFe₂O₄. The structure of Ca_1-xZn_xFe₂O₄ (x = 0.0–0.5) belonged to a group of an orthorhombic system (space group: Pbnm). It was observed that all the samples of Ca_1-xZn_xFe₂O₄ (x = 0.0–0.5) had positive Seebeck coefficient as shown on p-type semiconductor behavior. Thus thermal conductivity tended to decrease with increasing x value. The Ca_0.6Zn_0.4Fe₂O₄ showed lowest thermal conductivity of 6.52 W m^?1 K^?1 at 473 K, which was lower than 50.81% of CaFe₂O₄. These results suggested that Zn was an effective doping element for improving the thermal conductivity of Ca_1-xZn_xFe₂O₄.     

Structural and Multiferroic Properties of Bi3.4La0.6Ti3O12/CoFe2O4 Composite Thin Films

Bi_3.4La_0.6Ti₃O₁₂ and CoFe₂O₄ were synthesized by chemical solution route, and Bi_3.4La_0.6Ti₃O₁₂/CoFe₂O₄ multilayers were deposited by spin coating on Pt substrate. X-ray diffraction of multilayer structures reveals composite-like polycrystalline film. Leakage current is less than 10^?5 A at electric field < 90 KV/cm and follows the Ohmic behavior. Dielectric response shows relaxation and the loss (tan δ) is below 3% at 10⁶ Hz. Room temperature ferrroelectric polarization (P_r) = 20.2 μC/cm² and ferromagnetic memory (M_r) = 46.5 emu/cm³ has been obtained. Co-existence of FE and FM response can be attributed to stress and different permeability and permittivity involved in multilayer structures.     

Facile synthesis of superparamagnetic Fe3O4 nanoparticles just using ferric citrate and water

Fe₃O₄ nanoparticles were synthesized by a facile one-pot hydrothermal process just using ferric citrate and water without any additional reagent and post-treatment. The temperature of hydrothermal reaction had important influence on the crystallinity and magnetic property of Fe₃O₄ samples. Fe₃O₄ sample synthesized at 200 °C for 24 h showed a narrow size distribution (4 to 8 nm in diameter), and exhibited apparent superparamagnetism with saturated magnetization of 55.1 emu/g. The narrow size distribution and superparamagnetism were the interesting features of these Fe₃O₄ nanoparticles.     

Construction and electrochemical performances of the three-dimensional nano NiCo2O4

ABSTRACT

Bilayer NiCo₂O₄/NiCo₂O₄ nanosheet arrays on nickel foam (NF) are fabricated by a two-step solution-based method, which involves in hydrothermal process and chemical bath deposition. Compared with the monolayer NiCo₂O₄/NF electrode, the NiCo₂O₄/NiCo₂O₄/NF displays the unique micro-nanometer hierarchical and porours structure and has excellent pseudocapacitive behaviors in 6 M KOH, which exhibits high specific capacitances of 2363.64 F g^?1 at a constant current density of 0.5 Ag^?1, and 1454.55 F g^?1 at the higher current density of 8 Ag^?1, and shows a favourable cycling stability of 77.5% retention after 1000 cycles.     

Thermal and dielectric properties of ZnO-B2O3-MO3glasses (M = W, Mo)

Glasses in the ZnO-B₂O₃-MO₃(M = W, Mo) ternary were examined as potential replacements to PbO-B₂O₃-SiO₂-ZnO glass frits with the low firing temperature (500–600^∘C) for the dielectric layer of a plasma display panels (PDPs). Glasses were melted in air at 950–1150^∘C in a narrow region of the ternary using standard reagent grade materials. The glasses were evaluated for glass transition temperature (T _g ), softening temperature (T _d ), the coefficient of thermal expansion (CTE), dielectric constant (ε _r ), and optical property. The glass transition temperature of the glasses varied between 470 and 560^∘C. The coefficient of thermal expansion and the dielectric constant of the glasses were in the range of 5–8 × 10^{− 6}/^∘C and 8–10, respectively. The addition of MO₃to ZnO-B₂O₃binary could induce the expansion of glass forming region, the reduction of T _g and the increase in the CTE and the dielectric constant of the glasses. Also, the effect of the addition of MO₃to ZnO-B₂O₃binary on the transmittance in the visible-light region (350–700 nm) was investigated.     

Effects of Al2O3 on the piezoelectric properties of Pb(Mn1/3Nb2/3)O3-PbZrO3-PbTiO3 ceramics

Piezoelectric properties of Al₂O₃-doped Pb(Mn_1/3Nb_2/3)O₃-PbZrO₃-PbTiO₃ ceramics were investigated. The constituent phases, microstructure, electromechanical coupling factor, dielectric constant, piezoelectric charge and voltage constants were analyzed. Diffraction peaks for (002) and (200) planes were identified by X-ray diffractometer for all the specimens doped with Al₂O₃. The highest sintered density of 7.8 g/cm³ was obtained for 0.2 wt% Al₂O₃-doped specimen. Grain size increased by doping Al₂O₃ up to 0.3 wt%, and it decreased by more doping. Electromechanical coupling factor, dielectric constant, piezoelectric charge and voltage constants increased by doping Al₂O₃ up to 0.2 wt%, and it decreased by more doping. This might result from the formation of oxygen vacancies due to defects in O^{2 −} ion sites and the substitution of Al³⁺ ions.     

Effect of Sb2O3 addition on the varistor characteristics of ZnO-Bi2O3-ZrO2-MtrO (Mtr = Mn, Co)

Effect of Sb₂O₃ addition on the varistor characteristics of pyrochlore-free ZnO-Bi₂O₃-ZrO₂-M_trO (M_tr = Mn, Co) system previously proposed has been studied. With Sb₂O₃ up to 0.1 mol%, a gradual enhancement of densification and the grain growth inhibition were seen in the system sintered between 900 and 1200^∘C. In X-ray diffraction patterns, small amount of pyrochlore appeared in the specimens doped with Sb₂O₃ (>0.06 mol%), which is thought responsible for the sintering behavior. Enhanced values of non linear coefficient (α) were obtained in ZnO-Bi₂O₃-ZrO₂ (ZBZ) doped with 0.001 mol% Sb₂O₃, but was leveled off at higher concentrations. In ZBZ added with M_trO (M_tr = Mn, Co), significant increase of nonlinear coefficient (α > 30) along with low leakage current (I _L ≪ 100 μA/cm²) was attained. The α-enhancement effect of Sb₂O₃, however, was not observed in high-α ZBZ added with M_trO. As for degradation, addition of a trace amount (0.001 mol%) of Sb₂O₃ to ZBZM_tr was efficient, especially in I _L.     

Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)

Ga₂O₃ and Ga₂O₃-TiO₂ (GTO) nano-mixed thin films were prepared by plasma enhanced atomic layer deposition with an alternating supply of reactant sources, [(CH₃)₂GaNH₂]₃, Ti(N(CH₃)₂)₄ and oxygen plasma. The uniform and smooth Ga₂O₃ and GTO thin films were successfully deposited. Excellent step coverage of these films was obtained by chemisorbed chemical reactions with oxygen plasma on the surface. The dielectric constant of GTO thin film definitely increased compared to Ga₂O₃ film, and the leakage currents of GTO films were comparable to Ga₂O₃ films. The leakage current density of a 40-nm-GTO film annealed at 600^∘C was approximately 1×10⁻⁷ A/cm² up to about 600 kV/cm.     

Laser ablation preparation and property of bismuth-layer-structured SrBi2Ta2Ta2O9 and Bi4Ti3O12 ferroelectric thin films

Abstract

Bismuth-layer-structured ferroelectric thin films, SrBi₂Ta₂O₉ and Bi₄Ti₃O₁₂, have been prepared by laser ablation method on both Pt sheets and Si wafers at low temperatures of 400 ～ 500°C. These thin films have been characterized by XRD, XPS, AFM, C-V, D-E hysteresis and J-V measurement. SrBi₂Ta₂O₉ thin films have a good (105) preferential orientation, and Bi₄Ti₃O₁₂ thin films have (117) and c-axis orientation on these substrates. Ferroelectric film-SiO₂-Si structures show good C-V hysteresis curve owing to Si surface potential controlled by the D-E hysteresis. D-E hysteresis is obtained in Bi₄Ti₃O₁₂ thin film prepared on Pt sheet, and the remnant polarization and the coercive force are 7.5 μC/cm² and 72 kV/cm, respectively.     

Fabrication of amorphous bulk and multi-phase ceramics by melting method in the HfO2-Al2O3-Gd2O3-Eu2O3system

Ceramics have generally been fabricated from powders by shape forming & sintering methods except for glasses and glass ceramics. Glasses and glass ceramics can be fabricated by melting methods. The melting method has not only higher productivity but also higher shape forming ability than powder processes via forming & sintering methods. Thus we have reinvestigated melting methods in binary and ternary oxides systems to fabricate amorphous bulk ceramics and bulk nano composites. We have successfully fabricated amorphous phases by simple melt solidification methods in ternary eutectic melts in the HfO₂-Al₂O₃-Gd₂O₃system. The present study demonstrates the formation of the amorphous phases in quaternary systems HfO₂-Al₂O₃-Gd₂O₃-Eu₂O₃. Furthermore, we have also succeeded to fabricate nano-structured bulk ceramics, which consisted of constituent oxide grains with 20–100 nm in size, by post annealing of the amorphous phase.     

Microwave dielectric properties of B2O3-added Li2MgTiO4 ceramics for LTCC applications

Li₂MgTiO₄ (LMT) ceramics which are synthesized using a conventional solid-state reaction route. The LMT ceramic sintered at 1250°C for 4 h had good microwave dielectric properties. However, this sintering temperature is too high to meet the requirement of low-temperature co-fired ceramics (LTCC). In this study, the effects of B₂O₃ additives and sintering temperature on the microstructure and microwave dielectric properties of LMT ceramics were investigated. The B₂O₃ additive forms a liquid phase during sintering, which decreases the sintering temperature from 1250°C to 925°C. The LMT ceramic with 8 wt% B₂O₃ sintered at 925°C for 4 h was found to exhibit optimum microwave dielectric properties: dielectric constant 15.16, quality factor 64,164 GHz, and temperature coefficient of resonant frequency -28.07 ppm/°C. Moreover, co-firing of the LMT ceramic with 8 wt% B₂O₃ and 20 wt% Ag powder demonstrated good chemical compatibility. Therefore, the LMT ceramics with 8 wt% B₂O₃ sintered at 925°C for 4 h is suitable for LTCC applications.     

Influence of B2O3/SiO2 Ratio on the Fabrication of Nd:YAG Ceramics

B₂O₃/SiO₂ are used as composite sintering aids to fabricate Nd:YAG ceramics by solid-state reaction and vacuum sintering method at 1750°C for 5h using Nano-Al₂O₃, Y₂O₃, Nd₂O₃ as starting materials. In this article, we focus on the influence of B₂O₃/SiO₂ ratio on grain size, porosity and relative density. Finally, with the increase of B₂O₃/SiO₂ ratio, the density and shrinkage rate of transparent ceramics increase, the grain size becomes uniform and the porosity reduces, for the reason that B³⁺ begins to vaporize at 1300°C and is reduced to trace levels by 1600°C. The best B₂O₃/SiO₂ ratio is 4: 1.     

Effect of B2O3 and CuO on the sintering temperature and microwave dielectric properties of the BaTi4O9 ceramics

The effect of B₂O₃ and CuO on the sintering temperature and microwave dielectric properties of BaTi₄O₉ ceramics was investigated. The BaTi₄O₉ ceramics were able to be sintered at 975^∘C when B₂O₃ was added. This decrease in the sintering temperature of the BaTi₄O₉ ceramics upon the addition of B₂O₃ is attributed to the formation of BaB₂O₄ second phase whose melting temperature is around 900^∘C. The B₂O₃ added BaTi₄O₉ ceramics alone were not sintered below 975^∘C, but were sintered at 875^∘C when CuO was added. The formation of BaCu(B₂O₅) second phase could be responsible for the decrease in the sintering temperature of the CuO and B₂O₃ added BaTi₄O₉ ceramics. The BaTi₄O₉ ceramics containing 2.0 mol% B₂O₃ and 5.0 mol% CuO sintered at 900^∘C for 2 h have good microwave dielectric properties of ε_r = 36.3, Q× f = 30,500 GHz and τ_f = 28.1 ppm/^∘C     

Characterization of the CeO2 thin films for insulation layer and Pt/SrBi2Ta2O9/CeO2/Si MFISFET structure

Abstract

CeO₂ and SrBi₂Ta₂O₉ (SBT) thin films for MFISFET (metal-fcrroelectrics-insulator-semiconductor field effect transistor) were deposited by rf sputtering and pulsed laser deposition method, respectively. The effects of oxygen partial pressure during deposition for CeO₂ films were investigated. The oxygen partial pressure significantly affected the preferred orientation, grain size and electrical properties of CeO₂ films. The CeO₂ thin films with a (200) preferred orientation were deposited on Si(100) substrates at 600°C. The films deposited under the oxygen partial pressure of 50 % showed the best C-V characteristics among those under various conditions. The leakage current density of films showed order of the 10^?7～10^?8 A/cm² at 100 kV/cm. The SBT thin films on CeO₂/Si substrate showed dense microstructure of polycrystalline phase. From the C-V characteristics of MFIS structure composed of the SBT film annealed at 800°C, the memory window width was 0.9 V at ±5 V. The leakage current density of Pt/SBT/CeO₂/Si structure annealed at 800°C was 4×10^?7 A/cm² at 5 V.     

Dielectric behavior of Bi2/3Cu3Ti4O12 ceramic and thick films

The paper reports on synthesis, sintering and microstructure of Bi_2/3Cu₃Ti₄O₁₂, a lead-free, high-permittivity material with internal barrier layer capacitor behavior. Complex impedance and capacitance of the ceramic and thick films were studied as a function of frequency (10 Hz–2 MHz) and temperature (−170 to 400°C). Dc electrical conductivity of the samples was measured in the temperature range 20–400°C. Broad and high maxima of dielectric permittivity versus temperature plots were observed reaching 60,000 for ceramic and 5,000 for thick films. The maxima decrease and shift to higher temperatures with increasing frequency. Two arcs ascribed to grains and grain boundaries were found in the plots of imaginary part versus real part of impedance. Analysis of the impedance spectra indicates that Bi_2/3Cu₃Ti₄O₁₂ ceramic could be regarded as electrically heterogeneous system composed of semiconducting grains and less conducting grain boundaries. The developed thick film capacitors with dielectric layers based on Bi_2/3Cu₃Ti₄O₁₂ exhibit dense microstructure, good cooperation with Ag electrodes, high permittivity up to 5,000 and relatively low temperature coefficient of capacitance in the temperature range 100–300°C. Broad maxima in the dielectric permittivity versus temperature curves may be attributed to Maxwell–Wagner relaxation.     

Thermoelectric properties of Bi and Cu co-doped Ca3Co2O6single crystals

Single crystals of Bi and Cu-doped Ca₃Co₂O₆were synthesized in a molten K₂CO₃flux. Using an obtained single crystal of (Ca_0.985(5)Bi_0.015(5))₃(Co_0.990(3)Cu_0.010(3))₂O₆elongated to the c-axis direction of the crystal structure, the electric resistivity (ρ) and Seebeck coefficient (S) were measured from room temperature to over 1000 K in air. The single crystal showed p-type semiconducting behavior with ρ values of 1.8 Ω cm at 303 K and 0.017 Ω cm at 1000 K. The S values were +254 μ VK^{− 1} at 325 K, +360 μ VK^{− 1} at 420 K, and +214 μ VK^{− 1} at 1000 K. The power factor (S ² ρ ^{− 1}) increased with an increase of temperature and attained 2.70 × 10^{− 4} Wm^{− 1}K^{− 2} at 1000 K.     

Effect of synthetic conditions on particle size and photo-luminescence properties of Y2O3:Eu3+ nanophosphor

In this paper, effect of synthetic conditions on the particle size, crystal structure, and the photoluminescence properties of the Y₂O₃:Eu³⁺ nanophosphor was investigated. Solvent and dispersing agent were determined as the synthetic parameters. The nanophosphor synthesized from methanol solvent showed the smaller particle size of 4 nm. The XRD analysis indicates that the crystal structure of the Y₂O₃:Eu³⁺ nanophosphor is mainly cubic crystal with orientation of (222), (440), (400), and small peak of (511) indicating monoclinic crystal. The Y₂O₃:Eu³⁺ nanophosphor synthesized by using methanol solvent and 0.1 wt.% hydroxypropyl cellulose (HPC) as a dispersing agent showed higher degree of crystallization of 10.5 of I ₍₂₂₂₎/I ₍₅₁₁₎ ratio than that without HPC. Also, the photoluminescence properties of the nanophosphor showed red color that excitation and emission wavelengths of the nanophosphor were 250 and 611 nm, respectively. Using the 250 nm UV source, the highly intensive photoluminescence peak could be achieved at 611 nm under the synthetic condition of methanol solvent adding 0.1 wt.% HPC.     

Current Conduction and Dielectric Behavior of High k-Y2O3 Films Integrated with Si Using Chemical Vapor Deposition as a Gate Dielectric for Metal-Oxide-Semiconductor Devices

Integration of Y₂O₃ high-k thin film over Si as gate dielectric in high performance CMOS and high-density MOS memory storage capacitor devices is described. Y₂O₃ film growth by low-pressure chemical vapor deposition induces interfacial reactions and complex SiO_{2 – x} layer growth. It has a graded structure, in crystalline-SiO₂ form at Y₂O₃ side and amorphous SiO_{2 – x} form at Si side. MIS devices based on Y₂O₃/SiO₂-SiO_{2 – x} composite dielectric integrated with Si show high frequency C-V behavior indicative of inversion to accumulation changes in capacitance. Observed bi-directional hysterisis in C-V is detrimental to the functioning of storage capacitor in memory function. Detailed investigation of this effect led to understanding of gate bias controlled emission of carriers as responsible mechanism. Observed anomalous increase in inversion capacitance at low frequency is attributed to additional charges transferred from SiO_{2 – x}/Si interface states. Leakage current and injected charge carrier transport across bilayer interface is dominated by Poole-Frankel (PF) process at low fields and by Fowler-Nordhiem (FN) at high fields. This investigation provides a greater understanding of the complex nature of integration of Y₂O₃ films.     

Effects of water on the properties of Fe3O4@C superparamagnetic nanospheres

ABSTRACT

Fe₃O₄@C nanospheres have potential applications in the field of magnetic separation, magnetic hyperthermia, magnetic targeting and magnetic resonance imaging (MRI). The carbon layers formed around Fe₃O₄ nanopaticles determined the adsorption properties of this material. In this study, Fe₃O₄@C was prepared by a simple one-pot solvothermal method, in which different amount of water was added to investigate the influences of water on the properties of Fe₃O₄@C nanospheres. The resulted samples were characterized by techniques of TEM, FT-IR, UV–Vis and BET, and found that the thickness of carbon layer, the intensity of surface carboxyl group and the adsorption characters were significantly changed by introducing additional water in autoclave.