一种线性相位LC滤波器的设计

为解决滤波器带外抑制和通带内相位波动之间的矛盾,该文介绍了一种线性相位LC滤波器的设计方法,通过对滤波器传输零点特性进行分析,根据指标要求灵活设计电路拓扑结构和零点位置,采用内、外均衡电路级联网络两种方法,来实现具有高矩形、线性相位特性的滤波器。设计了中心频率21.4 MHz、0.5 dB带宽大于10 MHz、矩形系数(45 dB/0.5 dB)小于2、带内相位波动绝对值小于5°和中心频率1 300 MHz、1 dB带宽大于200 MHz、矩形系数(35 dB/1 dB)小于2、带内相位波动绝对值小于5°两款滤波器。该方法工程实用化强,便于调试和制作,可应用于幅相特性要求高的微波系统中,提高了系统性能指标。     

片上自动调谐的可编程有源RC滤波器

研制了一款可编程6阶巴特沃斯有源RC滤波器.为提高滤波器中运算放大器的增益带宽积,设计了一种新型的前馈补偿运算放大器.为消除工艺偏差和环境变化对截止频率的影响,设计了一种片上数字控制频率调谐电路,并采用TSMC 0.18 μm CMOS工艺进行了流片.滤波器采用低通滤波结构,测试结果表明,3 dB截止频率为1～32 MHz,步进1 MHz,带内增益0 dB,带内纹波0.8 dB,2倍带宽处带外抑制不小于24 dBc,5倍带宽处带外抑制不小于68 dBc,滤波器等效输入噪声为340 nV/√Hz@1MHz,调谐误差为±3％.滤波器裸芯片面积0.87 mm×1.05 mm.采用1.8V电源电压,滤波器整体功耗小于20 mW.     

CDMA系统用高性能高温超导滤波器的研制

本文研制了用于CDMA移动通信系统的高性能高温超导滤波器。该滤波器中心频率为832MHz,带宽为6MHz（相对带宽为0.72%）。为了实现结构紧凑的滤波器,采用了线条宽度和间距均为80μm的双螺旋形谐振器,在MgO基片上实现的12节滤波器尺寸仅为41.4mm×14mm。对滤波器的敏感度分析结果表明,该滤波器的频率响应特性对基片参数和仿真Cell尺寸的变化不敏感,具有较高仿真准确度。滤波器制备采用了高精度光刻和离子束刻蚀工艺,实际测试结果与仿真结果吻合得很好,并且无需调谐即表现出良好性能,插入损耗小于0.36dB,反射损耗大于15.6dB,带外抑制大于100dB。     

第三代移动通信用高温超导滤波器的研制

简单介绍了高温超导滤波器系统的构成和性能特点,根据第三代移动通信的技术要求,设计开发了两种类型的高温超导滤波器,针对频分双工的CDMA2000标准,开发了基于自均衡结构的线性相位超导滤波器,滤波器中心频率为830 MHz,带宽为10MHz,其65%带宽内的群时延波动小于±10 ns,带边陡度超过35 dB/MHz.针对时分双工的TD-SCDMA标准,开发了基于双模结构的大功率超导滤波器,滤波器的中心频率为2017.5 MHz,带宽为15MHz,其功率承载能力达到10W以上.     

采用电容耦合式馈线的高温超导滤波器设计

为了获得结构紧凑的滤波器,在设计中采用了螺旋形谐振器和电容耦合式馈线结构.利用集总元件等效电路给出了谐振器与电容耦合式馈线组成的电路的谐振频率和有载Q值的表达式.提出了馈线为电容耦合式时的集总元件带通滤波器等效电路.并基于上述电路在MgO基片上设计和实际制作了一个高性能的高温超导微带线滤波器.该滤波器的中心频率为2542 MHz,相对带宽为0.6%,尺寸仅为10mm×15mm.测试结果表明滤波器的带内插损小于0.1 dB,反射损耗为40.0 dB,验证了该等效电路设计方法的有效性.     

高温超导带通滤波器

本文报道用LaAlO_3衬底GdBa_2Cu_3O_1高温超导薄膜研制的四极平行耦合带通滤波器。在77K测试,结果为:中心频率为8.96GHz,带内插入损耗为0.54dB,带宽为500MHz。文中还讨论了设计制作高性能微带滤波器应注意的问题。     

应用于无线传感器网络的带片上自动调谐功能的CMOS Gm-C复数滤波器

本文采用0.18um CMOS工艺设计并实现了一个应用于无线传感器网络的带有片上自动调谐功能的Gm-C复数滤波器。该滤波器基于一个五阶切比雪夫低通RLC原型,由电容和差分跨导综合而成。为了实现滤波器中心频率和带宽的精确控制,采用了一个传统锁相环电路来实现片上自动调谐的功能。该滤波器的中心频率为2MHz,带宽2.4MHz。电路的测试结果表明：在1.8V电源电压下,自动调谐电路工作正常,滤波器具有较为精确的中心频率和带宽,实现了超过45dB的镜像抑制,同时带内抖动小于1.2dB。包括片上自动调谐电路在内的整个滤波器电路共有4.9mA的电流消耗。     

一种扇形结构小型化中频声表面波滤波器

该文研究了一种扇形结构的声表面波设计技术并分析了其工作原理及加权方式,为某电台接收机设计并制作了一款中心频率为374 MHz、-3 dB带宽大于17 MHz、插入损耗小于9.5 dB、通带波纹小于1 dB、带外抑制大于40 dB(10~352 MHz)的器件。将该器件封装在表贴SMD3838小型外壳中,其满足性能指标。结果表明,该器件首次突破了扇形结构中频声表面波滤波器在表贴SMD3838封装的研制,表明扇形结构声表面波滤波器产品实现小型化的可行性。     

S波段砷化镓单片窄带滤波器

<正>随着砷化镓单片集成电路的发展,微波无源、有源单片电路的使用范围越来越广泛。南京电子器件研究所已研制出一种砷化镓单片窄带s波段滤波器。芯片尺寸为5mm×4mm×0.1mm。3dB相对带宽为8.3％,在150MHz带内,即5.1％的相对带宽内,插损小于6dB,起伏小于0.5dB;距中心频率300MHz外,即20％的相对带宽外,抑制大于30dB;在离中心频率490MHz     

三阶级联复数有源RC带通滤波器

采用0.18μmCMOS工艺设计了一款应用在无线传网中的三阶级联有源RC复数带通滤波器,同时设计了自动频率调谐电路(AFT)。该滤波器采用的是切比雪夫逼近函数予以实现。在5比特数字控制码开关电容阵列的控制下,AFT电路即可完成对主体滤波器电路频率变化的校正。仿真结果显示,滤波器的中心频率稳定在2MHz,通带带宽为2MHz,镜像抑制比大于34dB,相邻信道阻带衰减大于34dB,通带纹波小于1dB,消耗电流为2.3mA,工作电源电压为1.8V。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.