Effect of synthetic conditions on particle size and photo-luminescence properties of Y2O3:Eu3+ nanophosphor

In this paper, effect of synthetic conditions on the particle size, crystal structure, and the photoluminescence properties of the Y₂O₃:Eu³⁺ nanophosphor was investigated. Solvent and dispersing agent were determined as the synthetic parameters. The nanophosphor synthesized from methanol solvent showed the smaller particle size of 4 nm. The XRD analysis indicates that the crystal structure of the Y₂O₃:Eu³⁺ nanophosphor is mainly cubic crystal with orientation of (222), (440), (400), and small peak of (511) indicating monoclinic crystal. The Y₂O₃:Eu³⁺ nanophosphor synthesized by using methanol solvent and 0.1 wt.% hydroxypropyl cellulose (HPC) as a dispersing agent showed higher degree of crystallization of 10.5 of I ₍₂₂₂₎/I ₍₅₁₁₎ ratio than that without HPC. Also, the photoluminescence properties of the nanophosphor showed red color that excitation and emission wavelengths of the nanophosphor were 250 and 611 nm, respectively. Using the 250 nm UV source, the highly intensive photoluminescence peak could be achieved at 611 nm under the synthetic condition of methanol solvent adding 0.1 wt.% HPC.     

Synthesis and temperature-dependent optical properties of Eu3+-doped NaYSiO4 red-emitting phosphors

Abstract

Novel Eu³⁺-activated orthosilicate NaYSiO₄:xEu³⁺ (x?=?0.02, 0.05, and 0.20) red-emitting phosphors were developed for white light emitting diode applications. The X-ray diffraction (XRD), photoluminescence excitation and emission spectra, temperature-dependent curves were applied to characterize the samples. The red emission of the NaYSiO₄:Eu³⁺ phosphor corresponding to ⁵D₀→⁷F₂ (614?nm) transition was observed under the excitation of 394?nm wavelength, which is suitable for UV LED chip. The quenching temperature for NaYSiO₄:0.05Eu³⁺ was found to be over 500 K. The CIE chromaticity coordinates of NaYSiO₄:0.05Eu³⁺ are very close to the National Television System Committee (NTSC) standard red.     

Pulsed Laser Deposited Ba(Mg1/3Ta2/3)O3 Microwave Dielectric Thin Films

Ba(Mg_1/3Ta_2/3)O₃ (BMT) microwave dielectric thin films were successfully synthesized by a modified pulsed laser deposition (PLD) process, which includes low temperature (200°C) deposition and high temperature (>500°C) annealing. Crystalline structured BMT thin films were obtained when the PLD-deposited films were post-annealed at a temperature higher than 500°C in oxygen atmosphere. The characteristics of BMT thin film, including crystallinity, grain size, film roughness, and dielectric properties were improved with annealing temperature, achieving dielectric constant K = 23.5 and dissipation factor tan δ = 0.015 (at 1 MHz) for the 800°C-annealed films.     

Predication of Thermal Conductivity of Mg2X (X = Ge and Sn) by Molecular Dynamics

Molecular dynamics (MD) simulations of elastic and thermal properties of Mg₂X (X = Ge and Sn) based on anti-fluorite structure (CaF₂) at temperature range 300?700 K were presented. The MD simulation in this study involving the Morse?type potential functions, and the Busing–Ida potential to determine the interatomic interaction among cluster atoms size 4×4×4 unit cells of 768 atoms {512?Mg^1.2+, 256?(Ge, Sn)^2.4?}. The potential parameter functions of the cluster atoms were indicated by random numerical method and fit lattice parameter from the experimental data obtained at room temperature. The calculation of lattice parameter, pressure, temperature and energy contributes to evaluation of the elastic properties. The results showed that Mg₂Ge had better elasticity than Mg₂Sn. On the other hand, Mg₂Sn had less thermal conductivity than Mg₂Ge. Since thermal conductivity decreases with increasing temperature, the interesting feature of thermal conductivity is particulary useful to enhance thermoelectric performance of materials.     

Dielectric properties of Pb[(Mg1/3Nb2/3),Ti]O3 with Bi modification

Bi(Mg_2/3Nb_1/3)O₃ was partially substituted into a Pb(Mg_1/3Nb_2/3)O₃⋅PbTiO₃ perovskite system and resultant changes in the phase developments and dielectric properties were investigated. Two major structures of columbite and rutile, along with a small fraction of Mg₄Nb₂O₉ (α-Al₂O₃ structure), were developed in the B-site precursor system, whereas only a perovskite was observable after the addition of PbO and Bi₂O₃. The replacement of Bi for Pb resulted in a great reduction in the maximum dielectric constants as well as a substantial decrease in the dielectric maximum temperatures.     

Thermoelectric properties of Bi and Cu co-doped Ca3Co2O6single crystals

Single crystals of Bi and Cu-doped Ca₃Co₂O₆were synthesized in a molten K₂CO₃flux. Using an obtained single crystal of (Ca_0.985(5)Bi_0.015(5))₃(Co_0.990(3)Cu_0.010(3))₂O₆elongated to the c-axis direction of the crystal structure, the electric resistivity (ρ) and Seebeck coefficient (S) were measured from room temperature to over 1000 K in air. The single crystal showed p-type semiconducting behavior with ρ values of 1.8 Ω cm at 303 K and 0.017 Ω cm at 1000 K. The S values were +254 μ VK^{− 1} at 325 K, +360 μ VK^{− 1} at 420 K, and +214 μ VK^{− 1} at 1000 K. The power factor (S ² ρ ^{− 1}) increased with an increase of temperature and attained 2.70 × 10^{− 4} Wm^{− 1}K^{− 2} at 1000 K.     

Effects of Magnetic Field on Synthesis and Thermoelectric Properties of NaCoO2

We synthesized polycrystalline sodium cobalt oxide (NaCoO₂) by using solid state reaction (SSR) method in a magnetic field. The powder of Na₂CO₃ and Co₃O₄ were mixed by ball milling and compacted in a magnetic field. The characterization of microstructure of powder size and crystal structure were analyzed through XRD. Thermoelectric properties and the lattice parameter of NaCoO₂ showed little change in magnetic field. The lattice parameters of NaCoO2 are a = 2.8443 Å, b = 2.8443 Å, and c = 10.8091 Å in the hexagonal structure (a = b ≠ c).     

Based on the Study on Preparation and Properties of Co(II) and La3+-Doped TiO2 Electrochromic Film

Abstract

In order to improve the optical properties and coloration effect. Co(II) and La³⁺ doped TiO₂ thin films were synthesized via a sol–gel, by using butyl titanate as precursor on the surface of ITO conductive glass substrate. Several techniques were used to characterize produces. Adopting the Sol-gel technology, [CH₃(CH₂)₃O]₄Ti, La₂O₃, CoC_l2?6H₂O as the precursor, the composite membranes with different molar ratio of Ti, Ti/La, Ti/Co to be prepared on the ITO glass substrate, the optimum technological parameters for preparation of the base material of the electro-induced discoloration glass are determined. The structure and surface morphology optical and electrochromic properties of Co(II) and La³⁺-doped TiO₂ films were examined with X-ray diffraction (XRD) analysis, energy dispersive spectrometer (EDS), scanning electron microscopy (SEM), and ultraviolet-visible spectrophotometer (UV-vis) DTA-TG analysis. It was found that:

1. The sintering temperature coating number, [CH₃(CH₂)₃O]₄Ti content of the TiO₂ film sample, and the doping category are the main factors that affect the structure and properties of the membrane based material;

2. Using two alcohol amine as chelating agent can effectively inhibit the formation of Ti (OH)₄ precipitation;

3. The properties of the TiO₂ glass film prepared by La₂O₃ and CoCl₂·6H₂O are fine;

4. Materials based on the preparation of a radiochromic film transmittance, high cyclic reversibility, cyclic voltammetry characteristics significantly, the results of the study for the electric induced radiochromic film-based material development and application provide a theoretical and experimental basis.

     

Effect of Cr2O3 addition on the microstructure and electrical properties of Mn-Ni-Co oxides NTC thermistors

The as-sintered Mn_1.1Ni_1.4Co_0.5O₄ crystallized in the solid solution of cubic spinel Mn-Ni-Co oxides, along with a small amount of the cubic spinel Ni-rich oxide phase. On the other hand, the Cr-substituted Mn_1.1Ni_1.4 Co_{0.5− x} Cr _x O₄ (0.07 ≤x ≤q 0.35) showed a single phase of cubic spinel Mn-Ni-Co-Cr oxides. This indicates that the substituted Cr suppressed the decomposition in the oxides. In addition, the Cr hindered the grain growth during sintering and increased the porosity. The electrical resistivity, the B _25/85 constant, and the activation energy of the Mn_1.1Ni_1.4Co_{0.5− x} Cr _x O₄ NTC thermistors increased with increasing Cr content. It is demonstrated that the Cr-substituted Mn_1.1Ni_1.4Co_{0.5− x} Cr _x O₄ NTC thermistors provided a variety of electrical properties, depending on the composition.     

BaTiO 3 on YBa 2 Cu 3 O 7 High T C Superconductors-Microwave Properties

We have made both patterned and unpatterned BaTiO 3 on YBa 2 Cu 3 O 7 microwave test structures as well as identical YBa 2 Cu 3 O 7 test structures and characterized them at 3.3 and 35 GHz. In both cases we found that the best unloaded Q values of the test resonators was for devices made from BaTiO 3 coated YBa 2 Cu 3 O 7 . This had led us to conclude that, at low temperatures, BaTiO 3 does not add additional losses to the system and that it may, in addition to being a tunable ferroelectric material, aid in passivating the YBa 2 Cu 3 O 7 ' surface. We present here preparation and measurement details and discuss the direction of future work in this area.     

Thermoelectric properties of p-type Bi0.5Sb1.5Te3 compounds fabricated by spark plasma sintering

P-type thermoelectric Bi_0.5Sb_1.5Te₃ compounds were prepared by the spark plasma sintering method with temperature ranges of 300–420^∘C and powder sizes of ∼75 μm, 76–150 μm, 151–250 μm. As the sintering temperature increased, the electrical resistivity and thermal conductivity of the compound were greatly changed due to an increase in the relative density. The Seebeck coefficient and electrical resistivity were varied largely with decreasing the powder size. Subsequently, the compound sintered at 380^∘C with the powders of ∼75 μm showed the maximum figure-of-merit of 2.65 × 10⁻³K⁻¹ and the bending strength of 73 MPa.     

添加Y3+、Mn2+对Z型软磁铁氧体微结构与性能的影响

用普通铁氧体工艺制备了Co2Z铁氧体材料，分析了Co2Z材料磁性能与显微结构的关系，研究了添加Y^3 、Mn^2_ 对材料结构与性能的影响，发现添加适量的Y^3 、Mn^2 可有效控制二次再结晶现象，从而提高Co2Z的电磁性能。     

Microwave dielectric properties of B2O3-added Li2MgTiO4 ceramics for LTCC applications

Li₂MgTiO₄ (LMT) ceramics which are synthesized using a conventional solid-state reaction route. The LMT ceramic sintered at 1250°C for 4 h had good microwave dielectric properties. However, this sintering temperature is too high to meet the requirement of low-temperature co-fired ceramics (LTCC). In this study, the effects of B₂O₃ additives and sintering temperature on the microstructure and microwave dielectric properties of LMT ceramics were investigated. The B₂O₃ additive forms a liquid phase during sintering, which decreases the sintering temperature from 1250°C to 925°C. The LMT ceramic with 8 wt% B₂O₃ sintered at 925°C for 4 h was found to exhibit optimum microwave dielectric properties: dielectric constant 15.16, quality factor 64,164 GHz, and temperature coefficient of resonant frequency -28.07 ppm/°C. Moreover, co-firing of the LMT ceramic with 8 wt% B₂O₃ and 20 wt% Ag powder demonstrated good chemical compatibility. Therefore, the LMT ceramics with 8 wt% B₂O₃ sintered at 925°C for 4 h is suitable for LTCC applications.     

Effect of Cr additions on the electrical properties of Ni–BaTiO3 ultra-thin multilayer capacitors

Multilayer ceramic capacitors based on BaTiO₃ dielectric compositions and Ni inner electrodes have complex interfacial reactions that impact the continuity of the inner electrode microstructure. Previously we demonstrated that through the addition of Cr to Ni, a significant improvement in the continuity of ultra-thin Ni electrodes in Ni–BaTiO₃ multilayer capacitors could be achieved. Here, the effect of the Cr addition to the nickel electrode pastes is studied with regard to the electrical properties. Low-field electrical measurements demonstrate no major differences between Cr doped Ni and undoped Ni. However, high-field measurements show a significant decrease to the total capacitor resistance. Under a critical electrical bias the conductivity significantly increases due to a Fowler–Nordheim tunneling conduction though the interfacial Schottky barrier at the dielectric–electrode interface; the onset voltage of this conduction is much lower than with the undoped nickel. Based on these results, we evaluate criteria for the selection of an appropriate refractory metal in order to improve the Ni electrode continuity.     

Microstructural Properties of Ba0.6Sr0.4TiO3/RuO2 Multi-Layers Grown on MgO and YSZ by Pulsed-Laser Deposition

The microstructure of Ba_0.6Sr_0.4TiO₃ (BST)/RuO₂ multi-layers grown on (100) MgO and (100) YSZ substrates, respectively, by pulsed-laser deposition (PLD) has been studied by transmission electron microscopy (TEM) and high-resolution electron microscopy (HREM). The RuO₂ films deposited at 700°C adopt epitaxial relationships with both substrates. The epitaxial films on (100) MgO consist of two variants with an orientation relationship given by (110) RuO₂//(100) MgO and [001] RuO₂//[011] MgO. The epitaxial films on (100) YSZ contain four variants with an orientation relationship given by (200) RuO₂//(100) YSZ and [011] RuO₂//[001] YSZ. The BST films deposited on the RuO₂ electrode are epitaxial on the (200) RuO₂ films deposited on YSZ, and non-epitaxial on the (110) RuO₂ films deposited on MgO. The epitaxial relationship between the BST and (200) RuO₂ films can be described as (111) BST//(200) RuO₂ and [1&1macr;0] BST//[011] RuO₂. The BST films contain at least four variants. The growth and microstructural properties of the multi-layer structures can be understood based on geometrical consideration of the crystal structures.     

Influence of B2O3/SiO2 Ratio on the Fabrication of Nd:YAG Ceramics

B₂O₃/SiO₂ are used as composite sintering aids to fabricate Nd:YAG ceramics by solid-state reaction and vacuum sintering method at 1750°C for 5h using Nano-Al₂O₃, Y₂O₃, Nd₂O₃ as starting materials. In this article, we focus on the influence of B₂O₃/SiO₂ ratio on grain size, porosity and relative density. Finally, with the increase of B₂O₃/SiO₂ ratio, the density and shrinkage rate of transparent ceramics increase, the grain size becomes uniform and the porosity reduces, for the reason that B³⁺ begins to vaporize at 1300°C and is reduced to trace levels by 1600°C. The best B₂O₃/SiO₂ ratio is 4: 1.     

Effect of Cr additions on the microstructural stability of Ni electrodes in ultra-thin BaTiO3 multilayer capacitors

Microstructural control in thin-layer multilayer ceramic capacitors (MLCC) is one of the present day challenges to maintain an increase in capacitive volumetric efficiency. This present paper opens a series of investigations aimed to engineer the stability of ultra-thin Ni electrodes in BaTiO₃-based multilayer capacitors using refractory metal additions to Ni. Here, pure Ni and Ni–1 wt.% Cr alloy powders are used to produce 0805-type BME MLCCs with 300 active layers and with dielectric and electrode layer thickness around 1 μm. To investigate the continuity of Ni electrodes, both MLCC chips with pure and doped electrodes were sintered at different temperatures for 5 h. It is found that the continuity of Ni electrodes is improved most likely due to the effect of Cr on the low-melting point (Ni,Ba,Ti) interfacial alloy layer formation. The interfacial alloy layer is not observed when Cr is segregated at Ni-BaTiO₃ interface in the Cr-doped samples, while it is found in all undoped samples. The interfacial alloy layer is believed to increase mass-transfer along the Ni-BaTiO₃ interfaces facilitating an acceleration of Ni electrodes discontinuities.     

Epitaxial Growth and Luminescent Properties of Mn2+-Activated ZnGa2O4 Films

The epitaxial growth and properties of Mn²⁺-doped ZnGa₂O₄ thin films on various single crystal substrates using pulsed laser deposition were investigated. Control of Zn/Ga stoichiometry required the use of a mosaic ZnGa₂O₄/ZnO ablation target to compensate for Zn loss due to evaporation. The photoluminescent intensity was a strong function of the Zn/Ga ratio, and also correlated with changes in the surface morphology. Superior photoluminescent intensity was attained from slightly Zn-deficient films which exhibit distinctive worm-like surface features. Enhanced photoluminescent intensity was observed in epitaxial films as compared to randomly-oriented polycrystalline deposits on glass substrates, suggesting an adverse effect of grain boundaries on luminescence properties.     

Influence of Defect Orientation on Electrical Insulating Properties of Plasma-Sprayed Alumina Coatings

The influence of the microstructure (pores and cracks) on electric properties of plasma-sprayed alumina coatings was investigated using the so-called Scanning Electron Microscope Mirror Effect (SEMME) technique.Coatings were sprayed with different alumina feedstock powders on various atmospheres using a CAPS (‘Controlled Atmosphere Plasma Spraying’). Microstructures with various amount of porosity and cracks orientation distributions were analysed. Both outer surfaces and cross-sections of alumina coatings have been analysed by SEMME technique using two complementary modes (measurement of absorbed current and mirror methods). Originally developed to study the behaviour of injected electrons and related phenomena, such as trapping ability, detrapping process and relaxation phenomena in bulk insulating materials, the SEMME technique was successfully applied, in this study, to porous coatings. It is proved that cracks orientation modifies both motion and trapping of charges and therefore the dielectric properties of plasma-sprayed alumina coatings.     

Effect of Precursor Concentration on Physical Properties of Cube-Like Zn2SnO4 Powders Synthesized by Co-Precipitation Method

Cube-like Zinc stannate (Zn₂SnO₄) spinel powders were synthesized by co-precipitation method using chloride starting precursors of zinc and tin. The influence concentration of precursors on relevant physical properties of Zn₂SnO₄ was investigated by increasing concentration of precursor material at 0.1 to 0.4 M (Zn:Sn at ratio 1:1). Structural properties of as-synthesized and Zn₂SnO₄ crystal were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and X-ray absorption spectroscopy (XAS). The results indicate that as-prepared material without calcination process is in cubic symmetry of zinc hydroxy stannate (ZnSn(OH)₆) affirmed by SEM and XRD results. Meanwhile, spinel phase of Zn₂SnO₄ with strong crystalline and eminent cubic structure can be achieved after calcination at 1000°C. Homogenous dispersion, high crystallinity and good cubic structure of Zn₂SnO₄ powders are occurred at higher concentration of precursors. Moreover, the oxidation state of these samples were investigated by the Zn K-edge and Sn L3-edge X-ray absorption near edge structure (XANES) using the synchrotron radiation light source. The analyses of XANES spectra revealed that the oxidation state of Zn was +2 and Sn valence was +4 in all Zn₂SnO₄ samples, which well corresponds to the theoretical values.