核壳结构CdS：Mn/ZnS纳米晶的制备与光学性能研究

以3-巯基丙酸为稳定剂,采用共沉淀法在水相中合成了CdS∶Mn掺杂纳米晶,然后进一步将ZnS包覆于CdS∶Mn纳米晶表面,制备了CdS∶Mn/ZnS核壳结构纳米晶。利用X射线衍射（XRD）,透射电子显微镜（TEM）和紫外-可见吸收光谱（UV-Vis）对纳米晶的结构、形貌和光学性质进行了表征,发现制备的纳米晶具有优秀的单分散性,确认合成了CdS∶Mn/ZnS核壳结构纳米晶。通过荧光光谱（PL）研究了纳米晶的发光性质和光稳定性,结果表明包覆壳层后纳米晶的发光强度显著提高,最高可达8倍,且Mn2＋离子的发光峰峰位置随着ZnS壳层数的增加而红移。此外,核壳纳米晶的光稳定性大大提高。     

复合结构纳米晶CdS：Cu/CdS的制备及光学特性

在非配位溶剂中合成了高质量的CdS纳米晶核,并利用Cu2+离子对其进行掺杂,制备了CdS:Cu纳米晶.通过进一步采用连续离子层吸附反应的方法对CdS:Cu纳米晶进行表面修饰,得到CdS:Cu/CdS复合结构纳米晶.利用X射线衍射(XRD),透射电镜(TEM),紫外可见吸收光谱(UV-Vis)和荧光光谱(PL)对其结构、形貌以及光学性质进行了表征和分析,结果表明:所制备的复合结构CdS:Cu/CdS纳米晶为立方闪锌矿结构;与CdS纳米晶核相比,掺杂Cu2+可以使其表面态发光发生红移;在CdS:Cu纳米晶中,通过改变掺杂Cu2+的浓度,可以实现表面态发光在570和620nm之间的连续调节.与未经包覆的CdS:Cu纳米晶相比,包覆层CdS增强了纳米晶CdS:Cu的稳定性.     

巯基包覆CdSe和CdSe/CdS核壳纳米晶的水相合成与表征

利用水相合成的方法制备了巯基包覆的具有较高荧光量子产率的CdSe和CdSe／CdS纳米晶．水相合成方法的优点是原料低廉、安全可靠和重复性高，缺点是纳米晶的尺寸分布较宽，发光效率不是很高．采用X-射线粉末衍射、吸收和荧光等光谱手段对纳米晶的平均尺度、粒径分布、晶体结构及发光特性进行了表征。在77K到300K的温度范围内，随着温度降低，CdSe纳米晶的发光峰逐渐蓝移，而CdSe／Cds纳米晶发光峰位基本不随温度变化而变化．此外，在325nm激光辐照下，CdSe／CdS纳米晶的荧光寿命比CdSe纳米晶延长了6倍左右，稳定性大幅度提高．以上结果表明，核壳结构的CdSe／CdS纳米晶具有较高的发光效率和良好的稳定性，具有广阔的应用前景．     

复合结构纳米晶CdS∶Cu/CdS的制备及光学特性

在非配位溶剂中合成了高质量的CdS纳米晶核,并利用Cu²⁺离子对其进行掺杂,制备了CdS∶Cu纳米晶.通过进一步采用连续离子层吸附反应的方法对CdS∶Cu纳米晶进行表面修饰,得到CdS∶Cu/CdS复合结构纳米晶.利用X射线衍射(XRD),透射电镜(TEM),紫外可见吸收光谱(UV-Vis)和荧光光谱(PL)对其结构、形貌以及光学性质进行了表征和分析,结果表明:所制备的复合结构CdS∶Cu/CdS纳米晶为立方闪锌矿结构;与CdS纳米晶核相比,掺杂Cu²⁺可以使其表面态发光发生红移;在CdS∶Cu纳米晶中,通过改变掺杂Cu²⁺的浓度,可以实现表面态发光在570和620nm之间的连续调节.与未经包覆的CdS∶Cu纳米晶相比,包覆层CdS增强了纳米晶CdS∶Cu的稳定性.     

水溶性发光硫化镉纳米晶的制备

以氯化镉和硫化钠为原料,巯基乙酸为有机配体,水为溶剂,制得表面羧基化的CdS纳米晶。利用FTIR、XRD、UV-vis、荧光光谱(PL)考察了CdS纳米晶的结构与性能。结果表明,羧基基团包覆在纳米晶表面,所制得的CdS纳米晶以立方晶型为主,电子-空穴对复合引起的表面发射和硫空位引起的缺陷发射共同作用,使得CdS纳米晶在紫外光照射下发出明显的黄光,表现出良好的光致发光性能。     

CdS/ZnO复合颗粒的制备与电致发光性能

以sol-gel法制备了ZnO前驱体,并通过水热反应得到了CdS/ZnO复合颗粒.采用红外光谱(IR)、X射线衍射(XRD)、扫描电镜(SEM)表征其结构、组成及形貌,并对其电致发光(EL)特性进行表征.结果表明CdS纳米晶生长在ZnO基体上;EL谱表明没有煅烧的CdS/ZnO复合颗粒表现为CdS的激子发射,发光强度较纯CdS有了明显的提高;而煅烧后的CdS/ZnO复合颗粒则表现为ZnO的缺陷发射,发光谱的半高宽较纯ZnO有所减小.     

不同壳层的CdS／ZnS核／壳结构量子点的温度相关荧光性质

报导了CdS／ZnS纳米晶体（NCs）的制备过程和其光学}生质。通过采用连续离子层吸附和反应技术（SILAR）,我们用少量的表面活性剂合成了不同壳层的四个样品,包括CdS核纳米晶以及具有1～3层ZnS壳的CdS／ZnS核／壳结构纳米晶体样品。发现具有一层ZnS壳的CdS／ZnS样品的荧光量子产率大约比未包覆壳层的CdS纳米晶体样品的强11倍。另外,随着壳层的增加（增至两到三层）,荧光量子产率呈现下降的趋势。对样品进行了温度相关的光谱测量,发现CdS／ZnS和CdS一样具有特殊的光学特性。     

核壳结构CdS/ZnS荧光量子点的制备与荧光性能研究

以氧化镉为镉源、硫单质为硫源、油酸为配体、在十八烯体系中合成单分散的CdS纳米颗粒,研究了配体浓度对纳米微粒的生长动力学、颗粒尺寸分布的影响.采用乙基黄原酸锌作为Zn、S源的反应前体,采用逐滴滴加的方法制备了具有核壳结构的CdS/ZnS量子点,吸收光谱和荧光光谱表明CdS/ZnS纳米粒子比单一的CdS纳米粒子具有更优异的发光特性.透射电子显微镜、X射线粉末衍射、X射线光电子能谱、选区电子衍射证明ZnS在CdS表面进行了有效包覆.所制备核壳结构纳米粒子具有较好的尺寸分布,荧光发射峰半高峰宽为18～20nm,荧光量子产率达40%.     

ZnO/CdS/Ag复合光催化剂的制备及其催化和抗菌性能

先用水热反应合成六方晶相CdS多层级花状微球并在其表面生长ZnO纳米棒形成均匀的ZnO/CdS复合结构,然后用光还原法将Ag纳米颗粒负载于ZnO纳米棒制备出ZnO/CdS/Ag三元半导体光催化剂,对其进行扫描电镜和透射电镜观察、光电性能测试、活性基团捕获实验以及光催化降解和抗菌性能测试,研究其对亚甲基蓝(MB)的降解和抗菌性能。结果表明：ZnO纳米棒均匀生长在CdS微球表面,CdS晶体没有明显裸露,Ag纳米粒子负载在ZnO纳米棒的表面;ZnO/CdS/Ag三元复合光催化剂有良好的可见光响应、较低的阻抗和较高的光电流密度;ZnO/CdS/Ag复合光催化剂能同时产生羟基和超氧自由基等活性氧基团;ZnO/CdS/Ag三元复合光催化剂对亚甲基蓝(MB)的30 min降解率高于90%;0.25 mg/mL的ZnO/CdS/Ag对革兰氏阴性菌(大肠杆菌)的灭菌率高于96%,对革兰氏阳性菌(金黄色葡萄球菌)能完全灭除。     

紫外辐照增强ZnS纳米晶发光性质的研究

采用化学沉淀法合成了规则的球状ZnS纳米晶,在Zn原料过量不同的条件下,得到的ZnS纳米晶发光强度不同。利用吸收光谱、发射光谱和透射电子显微镜对其光学特性和形貌进行了研究,发现ZnS纳米晶在424 nm处有一个与填隙原子或空位态原子等缺陷态有关的发射,归因于电子由浅施主能级向Zn空位形成的深能级受主跃迁产生。同时还观察到了在480 nm左右的伴峰出现,归因于ZnS表面S悬空键的发射。最后通过紫外辐照,使得纳米晶的表面生成了一层包覆体,降低了表面缺陷,增强了ZnS纳米晶的本征发光,发光强度随着辐照时间增加而增强,最后由于纳米晶表面不再变化而趋于稳定。     

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Synthesis of a new perovskite Pb(Li14Nb34)O3

A high-pressure technique was adopted to obtain perovskite-type $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$. A new perovskite $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$ was characterized to have a cubic symmetry with $\text{a}{}_{\mathrm{<mtext>o</mtext>}}\text{= 4.069}\text{A}\text{?}$; Li and Nb ions in the B-site of perovskite lattice may be in a random arrangement.     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Bulk crystalline BaPb34Bi14O3: A ceramic superconductor

The preparation conditions of the high T_C ceramic superconductor Ba(Pb,Bi)O₃ is correlated with the superconducting transition. Transition onsets of all materials are similar, but transition widths and transition completeness is strongly dependent on firing temperature. Only materials prepared over a narrow temperature range, resulting in a nearly ideal weight loss, have a complete and narrow transition.     

Electrostriction in Pb (Zn13Nb23)O3

The electrostriction in $\text{Pb (Zn}{}_{\mathrm{<mtext>1</mtext><mtext>3</mtext>}}\text{Nb}{}_{\mathrm{<mtext>2</mtext><mtext>3</mtext>}}\text{)}\text{O}{}_3$ crystals has been investigated using a strain gauge method. In the ferroelectric phase below 140 C, the strain vs the electric field shows a hysteresis, which is ascribed to the effect of ferroelectric domains. A quadratic relation holds between the strain x and the electric polarization P as x = QP² above about 170 C in the paraelectric phase. Values of the electrostrictive Q coefficients are determined from the measurements near 190 C, as Q₁₁ = 1.6·10^?2m⁴/C², Q₁₂ = ?0.86·10^?2m⁴/C², and Q₄₄ = 0.85·10^?2m⁴/C².     

Magnetic,electrical and thermal studies on the V1−xMox02

The monoclinic-to-tetragonal structure transition of oxides V_1?xMo_x0₂ with $\text{0≤}\text{x}\text{≤0.20}$ has been studied by means of DTA, X-ray diffraction, magnetic susceptibility (powder samples) and electrical conductivity (single crystals) measurements within the temperature region 80 K to 400 K. A linear decrease of the transition temperature of 11 K per atom % Mo was observed. The magnetic susceptibility of the low temperature phase was found to be temperature independent paramagnetic for all preparations. Electrical conductivity measurements on the same phase showed crystals with $\text{x}\text{? 0.04}$ to be semiconducting, while a metallic behavior was observed in the region $\text{0.10 ?}\text{x}\text{? 0.14}$.     

n-PbTep+−Pb1−xSnxTe heterojunctions prepared by a modified hot wall technique

$\text{n-PbTe}\text{p}{}^{\mathrm{+}}\text{?}\text{Pb}{}_{\mathrm{1?x}}\text{Sn}{}_{\mathrm{x}}\text{Te}$ heterojunctions with a long wavelength spectral cutoff (λ_c ≈ 6 μm) were prepared using the double-channel hot wall technique. The electrical and photoelectrical properties of the heterojunctions at 77, 197 and 300 K were investigated. Detectors with R_oA equal to 170 Ω cm² and a quantum efficiency of 25–40% were obtained. Reasons for the shift of the long wavelength spectral cutoff of the heterojunctions towards shorter wavelengths are given.     

Reactive plasma deposited SixCyHz films

Si_xC_yH_z films have been prepared at 200°C by reactive plasma deposition from SiH₄ and CH₄ diluted in helium in a tubular reactor. These films have a ratio s (equal to $\text{Si}\text{(}\text{Si+C}\text{))}$ ranging from 0.2 to 0.8, a refractive index ranging from 1.96 to 2.6 and an optical energy band gap in the range 2.7-2.2 eV. The total quantity of hydrogen in the film is 40% when s=0.5. Infrared analysis shows that these films have large fractions of homonuclear bonds and that this material is best described as a polymer. Mass spectrometric measurements of the gaseous products formed in the SiH₄-CH₄-He plasma have been performed and the results are related to the composition of the deposited layers.     

Core-current-enhanced domain-wall pinning in nanocrystalline Fe/sub 73.5/Cu/sub 1/Nb/sub 3/Si/sub 15.5/B/sub 7/ ribbon

We have studied the influence of surface fields H/sub p/ (generated by either direct or alternating core current) on soft magnetic properties of amorphous and nanocrystalline Fe/sub 73.5/Cu/sub 1/Nb/sub 3/Si/sub 15.5/B/sub 7/ ribbon. While in an amorphous ribbon the coercive field H/sub c/ decreases with H/sub p/, in the same optimally annealed ribbon (H/sub c/=1.3 A/m, M/sub m//spl ap/M/sub s/) H/sub c/ increases with H/sub p/ for all the explored types of H/sub p/ (static and dynamic with different phases with respect to that of the magnetizing field H). The unexpected increase of H/sub c/ in nanocrystalline ribbon is associated with the influence of H/sub p/ on the surface and main (inner) domain structure. Here, we develop a model that takes into account this influence and explains the experimental results.     

Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks

Integration of NiSi_x based fully silicided metal gates with HfO₂ high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi_x film. Ni content varies near the NiSi/HfO_x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi_x/HfO₂ interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi_x/HfO_x was found higher than that of poly-Si/HfO₂, likely due to compositional non-uniformity of NiSi_x. No intermixing between Hf, Ni and Si beyond interfacial roughness was observed.