一种喹啉类镓配合物的表征及发光性能研究

合成并通过真空升华提纯得到了一种高纯度的8-羟基喹啉类有机金属配合物GaMq2Cl,通过1HNMR、元素分析确定其结构,研究了配合物的热稳定性能,通过紫外-可见吸收光谱、荧光发射光谱分析GaMq2Cl的能带结构.实验结果表明,GaMq2Cl分解温度为348℃;GaMq2Cl在紫外光的激发下,在二甲亚砜溶液体系中的荧光发射峰在511nm处,为蓝绿色荧光,色纯度高,荧光量子效率高,禁带宽度3.09eV;其粉末为发射峰在471nm处,半高宽(FWHM)86.2nm的蓝绿光发射.     

新型含氟8-羟基喹啉锌配合物的合成及光学性能研究

设计合成了3种新型含单氟8-羟基喹啉衍生物配体:(E)-2-[2-(2-氟代苯基)乙烯基]-8-羟基喹啉(4a)、(E)-2-[2-(3-氟代苯基)乙烯基]-8-羟基喹啉(4b)、(E)-2-[2-(4-氟代苯基)乙烯基]-8-羟基喹啉(4c)及其相应的锌配合物(5a)、(5b)、(5c),利用1 H-NMR、IR、MS、元素分析确认了其结构。测定了它们在DMF溶液中的荧光性质;荧光光谱显示化合物4a、4b、4c在DMF溶液中的λmax分别是505nm、487nm、513nm;5a、5b、5c的λmax分别是559nm、598nm、588nm,荧光光谱显示氟基位置的改变可以调控8-羟基喹啉锌配合物的发光性质。     

树枝状8-羟基喹啉锌的合成和荧光性能研究

通过收敛法合成了2种不同树枝状8-羟基喹啉配体，产物通过核磁共振（NMR）和红外（IR）进行表征；并通过荧光光谱对树枝状8-羟基喹啉配体及Zn（Ⅱ）金属配合物的性能进行研究，结果表明这些配体和Zn（Ⅱ）配合物均能溶于常见的溶剂，树枝状修饰使荧光强度变大，树枝状结构的外围官能团影响荧光性质；树枝状8-羟基喹啉锌的荧光出现明显的红移，有望在有机电致发光材料领域中得到广泛应用。     

8-羟基喹啉衍生物锌配合物的光物理特性研究

以2-甲基8-羟基喹啉为原料,与芳醛反应合成了两种2位乙烯基取代的8-羟基喹啉衍生物2-(5’-溴噻吩基)乙烯基]-8-羟基喹啉,2-(5’-溴双噻吩基)乙烯基]-8-羟基喹啉,及其相应的Zn配合物Zn(TVQ)_2、Zn(TVQ)_2。利用IR,UV,~1HNMR,ESI-MS,FAB-MS,元素分析确认化合物的结构。配合物Zn(TVQ)_2、Zn(TVQ)_2的发射波段比宽(500～800nm),Zn(TVQ)_2用波长为393,476 nm的光作为激发光时,发射波长λ_(max)为597nm,Zn(TVQ)_2用波长为469 nm的光作为激发光时,发射波长λ_(max)为620nm,2-甲基-8-羟基喹啉锌以350nm激发光发射波长λ_(max)为515nm。由此可见,在喹啉环的2位引入噻吩基团后,使得π共轭体系的增加,发射光的波长明显向红光波长方向移动,达到了调控波长的目的,有可能开发成新的电致发光材料。     

8-羟基喹啉金属配合物电致发光材料

有机/高分子电致发光器件是当前国内外平板显示器技术领域的研究热点,8-羟基喹啉金属配合物(8HQM)以其优良的电致发光性能成为研制高效率的有机/高分子电致发光器件的首选材料.针对近十年来8HQM电致发光材料的研究状况,对其电致发光机制、分子结构及发光性能的关系、分子种类及其最新研究进展,进行综述,展望了其发展趋势.     

二茂铁型双（8-羟基喹啉）席夫碱高分子配合物的合成与表征

通过1，1’-二甲酰氯二茂铁与双（8-羟基喹啉）联苯胺席夫碱的缩聚反应，得到了二茂铁-8-羟基喹啉型缩聚物，然后与不同的金属离子配位，获得了一类新型的二茂铁8-羟基喹啉型高分子金属配位聚合物。用红外光谱（IR）、元素分析、差热分析（DSC—TGA）、荧光光谱对配体和金属配位聚合物进行表征。结果表明，配住金属参与后，提高了缩聚物的热性能。配体和配聚物的荧光性能分析表明，化舍物的发射谱出现在425～550nm之间，并且呈现三重荧光性质，在配体与金属离子配合后，其荧光强度增强。     

可聚合8-羟基喹啉衍生物的合成及高分子化

5氯-甲基-8-羟基喹啉与烯丙醇反应,得到5-(烯丙氧)甲基-8-羟基喹啉可聚合单体,进一步与苯乙烯聚合,得到含8羟-基喹啉基团的高分子。将所得的聚合物与铝离子配位得到高分子配合物(最大发射波长为512 nm)。利用红外光谱、紫外光谱、核磁共振和原子力显微镜(AFM)对配体和配合物的结构进行了表征,利用荧光光谱研究了配合物的光致发光性能。     

8-羟基喹啉锌/碳微球复合材料的合成表征及发光性能

利用流变相反应法制备了碳微球(CMSs)负载8-羟基喹啉锌(Znq2)的复合材料.通过场发射扫描电子显微镜、X射线衍射仪、热重分析仪、X射线光电子能谱仪、傅里叶红外光谱仪和荧光分光光度计等对Znq2/CMSs复合材料结构和发光性能进行了表征和分析.结果表明:Znq2以非共价键形式负载于直径均匀的CMSs(300～400...     

8-羟基喹啉类配体及其配合物应用研究

8-羟基喹啉类配体及其配合物在分析化学中有着广泛的应用,用作电致发光材料是近年来较热门的研究课题.以8-羟基喹啉为核心,较详细地评述了近10年来8-羟基喹啉类有机分析试剂在光度分析中应用的最新进展及研究现状,较全面地概述了8-羟基喹啉类发光材料的最新研究进展及在有机电致发光器件中的应用.     

荧光导电聚合物聚N-[5-(8-羟基喹啉)甲基]苯胺的合成与表征

用化学氧化法合成了功能材料聚N-[5-(8-羟基喹啉)甲基]苯胺,并用X射线衍射、红外光谱、紫外-可见光谱和荧光分光光度计等对其及掺杂态结构和性质进行了表征和分析,研究结果表明该导电化合物无论掺杂与否,都同时既具有较好的导电性,又具有较好的荧光特性。     

2-(2-羟基苯基)苯并咪唑锌的合成及其光谱性能研究

合成了一种纯蓝的发光材料2-(2-羟基苯基)苯并咪唑锌(Zn(pbm)2),用元素分析、核磁共振、红外光谱、紫外-可见光吸收光谱、循环伏安曲线、原子力显微镜以及光致发光光谱、热重等表征了材料的结构、光学带隙、能带结构、成膜性能、发光性能以及热稳定性.实验结果表明,配合物具有较好的热稳定性;在DMSO溶液中Zn(pbm)2的紫外吸收峰波长为299、334、357nm;光学带隙为3.03eV.利用真空热蒸镀法可以得到均匀致密的Zn(pbm)2薄膜,其粗糙度为7.05nm.在365nm紫外光的激发下,产生发光峰在445nm附近,半高宽(FWHM)为81nm的纯蓝光发射.     

钨酸镉微纳米材料的合成与荧光性质

以钨酸钠(Na2WO4.2H2O)和硝酸镉[Cd(NO3)2]为原料制备前躯体,用熔盐法合成CdWO4纳米晶粉体,并通过X射线粉末衍射、扫描电镜和荧光光谱对其进行了表征。结果表明:所得的CdWO4系列样品属于单斜晶系,空间群为P2/c,晶胞参数a=0.5074nm,b=0.5859nm,c=0.5029nm,α=90°,β=91.47°,γ=90.00°。在245nm的光激发下,CdWO4的发射光谱在480nm左右有一宽带发射峰,为基质的CdWO4特征峰,并且样品在500℃、3h时发光强度最强。     

Synthesis and chemical properties of photoluminescent self-doped polyanilines

Fluorescent self-doped polyanilines (PAS-AntPy-a and PAS-AntPy-b) were obtained by the pyridinium sulfonation of poly(2-methoxyaniline-5-sulfonic acid) (PAS) with 4-(2-anthracene-9-yl-vinyl)pyridine (AntPy). The degrees of pyridinium sulfonation in PAS-AntPy-a and PAS-AntPy-b were 0.70 and 0.97, respectively. A neutral polyaniline with an AntPy side unit (PANI-AntPy) was synthesized by the oxidative polymerization of N-(2-aminophenyl)-4-(2-anthracene-9-yl-vinyl)pyridinium chloride. The UV-vis spectra of PAS-AntPy-a and PAS-AntPy-b exhibited an absorption due to the polaron band that was derived from the protonation of amine groups in the polyaniline backbone with the remaining sulfonic acid proton. In contrast, PANI-AntPy did not exhibit absorption due to the polaron band. PAS-AntPy-a, PAS-AntPy-b, and PANI-AntPy were photoluminescent in a solution. The electric conductivity of PAS-AntPy-a was σ = 1.5 × 10⁻⁷ S cm⁻¹, which was higher than that of H₂SO₄ doped PANI (4.2 × 10⁻⁹ S cm⁻¹) reported previously.     

Synthesis and characterization of photoluminescent cerium-doped yttrium aluminum garnet

Powder phosphor yttrium aluminum garnet (YAG), doped with trivalent cerium (Ce³⁺) is synthesized by sol-gel method. The formation of YAG and YAG:Ce (cerium-doped yttrium aluminum garnet) was investigated by means of X-ray diffraction (XRD). Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were also used. The purified crystalline phases of YAG and YAG:Ce were obtained at 1000 °C. The maximum average grain size is about 20-23 nm for undoped samples and 28-34 nm for doped samples. The crystalline YAG:Ce emission shows one peak in the range 480-535 nm with the maximum near 520 nm. Photoluminescence (PL) intensity of 5d → 4f transition of Ce³⁺ increased with increasing annealing temperature. With increasing the concentration of Ce³⁺, the photoluminescence peak shifts towards the red region.     

超声合成二苯基羟乙酮的研究

在超声波条件下合成了二苯基羟乙酮.研究了超声功率、超声时间、溶液pH值和催化剂用量对产率的影响.结果表明,超声功率低于80W时,没有产物生成,功率大于80W,产率随功率的增大而增加;超声时间延长,产率迅速增加,25min后产率达47.4%;催化剂用量在1.8g左右,pH维持在8.5～9.5有较高的产率.产品熔点与标准样相符,其IR谱与标准谱图一致.     

Structure, charge-transfer and luminescent properties bis(2-methyl-8-hydroxyquinoline) gallium chloride

Bis(2-methyl-8-hydroxyquinoline) Gallium Chloride (GaMq2Cl) has been synthesized and characterized by X-ray crystallography. It is known from X-ray diffraction data on single crystals that the crystals of GaMq2Cl were monoclinic, space group C2/c, a = 28.701 A, b = 9.5405 A, c = 15.1434 A, Z = 8. Its thermal stability, electron structures and structural stability were investigated by TG analysis and quantum chemical calculations. The complex was a thermally stable material, with decomposition temperature being 348 degrees C. The electron-transfer property of GaMq2Cl is of advantage over hole-transfer property. Under UV excitation at 365 nm, the complex emits blue fluorescence with the maximum emission peak at 471 nm. Finally, blue-green light-emitting devices using this complex as the emissive layer were also fabricated and investigated, with emission wavelength at 502 nm. The results promote GaMq2Cl as a good candidate for luminescent material.     

Nitrate-dependent biodegradation of quinoline,isoquinoline, and 2-methylquinoline by acclimated activated sludge

The anaerobic degradation of quinoline, isoquinoline and 2-methylquinoline was investigated under nitrate-reducing conditions with acclimated activated sludge. Quinoline was completely transformed during degradation with an optimum COD/NO₃–N ratio of 7. Isoquinoline and 2-methylquinoline were also completely transformed; however, nitrate consumption was much lower with the optimum COD/NO₃–N ratios being in the ranges of 83–92 and 21–26, respectively. GC-MS analyses showed that during degradation, quinoline and isoquinoline were transformed by hydroxylation into 2(1H)-quinolinone and 1(2H)-isoquinolinone, respectively. While quinoline was completely mineralized, only 92% of isoquinoline was mineralized, and 1(2H)-isoquinolinone remained in the effluent. 2-Methylquinoline was transformed by hydrogenation to 1,2,3,4-tetrahydro-2-methyl-quinoline, and further degradation resulted in cleavage of the heterocyclic ring leaving 4-ethyl-benzenamine. Both the metabolites remained in the effluent, resulting in the low mineralization of 2-methylquinoline (58%). This is the first time that 2-methylquinoline is observed degradable under denitrifying conditions, and its metabolites are identified.     

The influence of substrate characteristics on the contact angles between liquid gallium and gallium arsenide crystals

Parameters influencing the interfacial interaction between liquid gallium and single crystalline gallium arsenide were investigated under vacuum by means of the sessile-drop technique over the temperature range ∼ 30 to 200° C. In addition to their dependence on the anisotropy of the {111} planes, contact angles in the Ga(I)/GaAs(s) system were found to be sensitive to the degree of misorientation and the direction of tilt of these planes. Furthermore, contact angles were found to be dependent on the size of the liquid drop and on the surface roughness of the substrate. In agreement with theoretical expectations the measured angles increased with increasing roughness of the GaAs surfaceS. However, these angles were found to be unaffected by the presence of N₂, Ar, and He atmospheres, and by the nature and concentration of charge carriers in the substrate.