低电压SRAM测试电路设计与实现

本文基于SMIC 40nm LL CMOS工艺对一款256Kb的低电压8T SRAM芯片进行测试电路设计与实现,重点研究低电压SRAM的故障模型和测试算法,并完成仿真验证与分析。电路主要包括DFT电路和内建自测试电路两部分,前者针对稳定性故障有着良好的覆盖率,后者在传统March C+算法基础上,提出了一种新的测试算法,March-Like算法,该算法能够实现更高的故障覆盖率。仿真结果表明,本文设计的DFT电路能够减小稳定性故障的最小可检测电阻,提高了稳定性故障的测试灵敏度;March-Like算法可以检测到低电压SRAM阵列中的写破坏耦合故障、读破坏耦合故障和写干扰故障。     

Dynamic Power Supply Current Testing for Open Defects in CMOS SRAMs

The detection of open defects in CMOS SRAM has been a time consuming process. This paper proposes a new dynamic power supply current testing method to detect open defects in CMOS SRAM cells. By monitoring a dynamic current pulse during a transition write operation or a read operation, open defects can be detected. In order to measure the dynamic power supply current pulse, a current monitoring circuit with low hardware overhead is developed. Using the sensor, the new testing method does not require any additional test sequence. The results show that the new test method is very efficient compared with other testing methods. Therefore, the new testing method is very attractive.     

Efficient testing of SRAM with optimized march sequences and a novel DFT technique for emerging failures due to process variations

With increasing inter-die and intra-die parameter variations in sub-100-nm process technologies, new failure mechanisms are emerging in CMOS circuits. These failures lead to reduction in reliability of circuits, especially the area-constrained SRAM cells. In this paper, we have analyzed the emerging failure mechanisms in SRAM caches due to transistor V/sub t/ variations, which results from process variations. Also we have proposed solutions to detect those failures efficiently. In particular, in this work, SRAM failure mechanisms under transistor V/sub t/ variations are mapped to logic fault models. March test sequences have been optimized to address the emerging failure mechanisms with minimal overhead on test time. Moreover, we have proposed a design for test circuit to complement the March test sequence for at-speed testing of SRAMs. The proposed technique, referred as double sensing, can be used to test the stability of SRAM cells during read operations. Using the proposed March test sequence along with the double sensing technique, a test time reduction of 29% is achieved, compared to the existing test techniques with the same fault coverage. We have also demonstrated that double sensing can be used during SRAM normal operation for online detection and correction of any number of random read faults.     

Dynamic Power Supply Current Testing of CMOS SRAMs

We describe the design and implementation of a dynamic power supply current sensor which is used to detect SRAM faults such as disturb faults as well as logic cell faults. A formal study is presented to assess the parameters that influence the sensor design. The sensor detects faults by detecting abnormal levels of the power supply current. The sensor is embedded in the SRAM and offers on-chip detectability of faults. The sensor detects abnormal dynamic current levels that result from circuit defects. If two or more memory cells erroneously switch as a result of a write or read operation, the level of the dynamic power supply current is elevated. The sensor can detect this elevated value of the dynamic current. The dynamic power supply current sensor can supplement the observability associated with any test algorithm by using the sensor as a substitute for the read operations. This significantly reduces the test length and the additional observability enhances defect coverages.     

一种测试SRAM失效的新型March算法

随着工艺偏差的日益增加,新的失效机制也在亚100 nm工艺的CMOS电路里出现了,特别是SRAM单元。SRAM单元的故障由晶体管阈值电压Vt差异引起,而Vt差异又是由工艺偏差造成的。对于这类SRAM失效机制,需要把它映射成逻辑故障模型,并为检测出这类故障研究出新的March测试序列。针对这些逻辑故障模型,提出了一种新型的March算法序列;并通过验证,得到了很高的测试覆盖率。     

Memory Fault Modeling Trends: A Case Study

In recent years, embedded memories are the fastest growing segment of system on chip. They therefore have a major impact on the overall Defect per Million (DPM). Further, the shrinking technologies and processes introduce new defects that cause previously unknown faults; such faults have to be understood and modeled in order to design appropriate test techniques that can reduce the DPM level. This paper discusses a new memory fault class, namely dynamic faults, based on industrial test results; it defines the concept of dynamic faults based on the fault primitive concept. It further shows the importance of dynamic faults for the new memory technologies and introduces a systematic way for modeling them. It concludes that current and future SRAM products need to consider testability for dynamic faults or leave substantial DPM on the table, and sets a direction for further research.     

IDDQ Testing of Opens in CMOS SRAMs

The behavior of a CMOS SRAM memory in the presence of open defects is analyzed. It has been found that destructive read-out depends on the level of the precharge. A technique to test open defects producing data retention faults is proposed. An initial condition is forced during the writing phase. In this way, intermediate voltages appear during the memorizing phase. Hence, the quiescent current consumption (I_DDQ) increases and the fault can be detected sensing the I_DDQ. The testability regions for the defective memory cell were determined using state diagrams. Conditions to obtain the optimum vector have been stated. A DFT circuitry has been proposed. The cost of the proposed approach in terms of area, test time, and performance degradation is analyzed.     

Analysing NBTI Impact on SRAMs with Resistive Defects

Density’s increase in Static Random Access Memory (SRAM) has become an important concern for testing, since new types of defects, that may occur during the manufacturing process, are introduced. On the one hand, new manufacturing defects may lead to dynamic faults, which are considered one of the most important causes of test escape in deep-submicron technologies. On the other hand, the SRAM’s robustness is considered crucial, since it may affect the entire SoC. One of the most important phenomena to degrade SRAM reliability is Negative-Bias Temperature Instability (NBTI) causing the memory cells’ aging. In this context, the paper proposes to analyse the impact of NBTI on SRAM cells with resistive defects that eventually escape manufacturing test and, with aging, may generate faults over time. Finally, SPICE simulations adopting a commercial 65 nm CMOS technology library have been performed in order to estimate NBTI’s precise impact over time.     

一种Mbist新型算法March 3CL的设计

制造工艺的不断进步,嵌入式存储器在片上系统芯片中的集成度越来越大,同时存储器本身也变得愈加复杂,使得存储器出现了一系列新的故障类型,比如三单元耦合故障.存储器內建自测试技术是当今存储器测试的主流方法,研究高效率的Mbist算法,是提高芯片成品率的必要前提.以SRAM的7种三单元耦合故障为研究对象,通过分析故障行为得到三单元耦合的72种故障原语,并且分析了地址字内耦合故障的行为,进而提出新的测试算法March 3CL.以2048X32的SRAM为待测存储器,利用EDA工具进行了算法的仿真,仿真结果表明,该算法具有故障覆盖率高、时间复杂度低等优点.     

Reducing the CMOS RAM test complexity withI DDQ and voltage testing

In this article, we outline a RAM test methodology taking into accountI _DDQ and voltage based March tests. RAM test cost forms a significantly large portion of its total production cost and is projected to increase even further for future RAM generations.I _DDQ testing can be utilized to reduce this cost. However, owing to architectural and operational constrains of RAMs, a straight forward application ofI _DDQ testing has very limited defect detection capability. These constrains are removed by creating anI _DDQ test mode in RAMs. All bridging defects in RAM matrix, including the gate oxide defects, are detected by fourI _DDQ measurements. TheI _DDQ test is then supplemented with voltage based March test to detect the defects (opens, data retention) that are not detectable usingI _DDQ technique. The combined test methodology reduces the algorithmic test complexity for a given SRAM fault model from 16n to 5n+4I _DDQ measurements.     

Technology and layout-related testing of static random-access memories

Static random-access memories (SRAMs) exhibit faults that are electrical in nature. Functional and electrical testing are performed to diagnose faulty operation. These tests are usually designed from simple fault models that describe the chip interface behavior without a thorough analysis of the chip layout and technology. However, there are certaintechnology and layout-related defects that are internal to the chip and are mostly time-dependent in nature. The resulting failures may or may not seriously degrade the input/output interface behavior. They may show up as electrical faults (such as a slow access fault) and/or functional faults (such as a pattern sensitive fault). However, these faults cannot be described properly with the functional fault models because these models do not take timing into account. Also, electrical fault models that describe merely the input/output interface behavior are inadequate to characterize every possible defect in the basic SRAM cell. Examples of faults produced by these defects are: (a) static data loss, (b) abnormally high currents drawn from the power supply, etc. Generating tests for such faults often requires a thorough understanding and analysis of the circuit technology and layout. In this article, we shall examine ways to characterize and test such faults. We shall divide such faults into two categories depending on the types of SRAMs they effect—silicon SRAMs and GaAs SRAMs.     

Aggressive drowsy cache cells

An aggressive drowsy cache block management, where the cache block is forced into drowsy mode all the time except during write and read operations, is proposed. The word line (WL) is used to enable the normal supply voltage (V _{DD_high}) to the cache line only when it is accessed for read or write whereas the drowsy supply voltage (V _{DD_low}) is enabled to the cache cell otherwise. The proposed block management neither needs extra cycles nor extra control signals to wake the drowsy cache cell, thereby reducing the performance penalty associated with traditional drowsy caches. In fact, the proposed aggressive drowsy mode can reduce the total power consumption of the traditional drowsy mode by 13% or even more, depending on the cache access rate, access frequency and the CMOS technology used.     

基于FPGA的SRAM测试电路的设计与实现

为了保证独立的SRAM模块或嵌入式SRAM模块功能的完整性与可靠性,必须对SRAM模块进行测试。介绍了一种基于Ahera DE2开发板的面向字节的SRAM测试电路的设计与实现。测试算法采用分为字内和字间测试两部分的高故障覆盖率March C-算法;设计的测试电路可由标准的JTAG（联合测试工作组）接口进行控制。设计的测试电路可测试独立的SRAM模块或作为BIST（内建自测试）电路测试嵌入式SRAM模块。验证结果表明该SRAM测试系统是非常高效的。     

Analysis of leakage reduction technique on FinFET based 7T and 8T SRAM cells

We propose a FinFET based 7T and 8T Static Random Access Memory (SRAM) cells. FinFETs also promise to improve challenging performance versus power tradeoffs. Designers can run the transistors more rapidly and use the similar amount of power, compared to the planar CMOS, or run them at the similar performance using less power. The aim of this paper is to reduce the leakage current and leakage power of FinFET based SRAM cells using Self-controllable Voltage Level (SVL) circuit Techniques in 45nm Technology. SVL circuit allows supply voltage for a maximum DC voltage to be applied on active load or can reduce the supplied DC voltage to a load in standby mode. This SVL circuit can reduce standby leakage power of SRAM cell with minimum problem in terms of chip area and speed. High leakage currents in submicron regimes are primary contributors to total power dissipation of bulk CMOS circuits as the threshold voltage V _th, channel length L and gate oxide thickness t _ox are scaled down. The leakage current in the SRAM cell increases due to reduction in channel length of the MOSFET. Two methods are used; one method in which the supply voltage is reduced and other method in which the ground potential is increased. The Proposed FinFET based 7T and 8T SRAM cells have been designed using Cadence Virtuoso Tool, all the simulation results has been generated by Cadence SPECTRE simulator at 45nm technology.     

基于IDDT的数字电路故障诊断研究

数字电路的电阻性开路故障是在电路直接相连的内部节点之间由于缺陷电阻的存在而引起的故障。开路故障不会立即引起电路的功能性故障,但它会引起延时性故障,并且不能用电压的方法来探测。针对数字电路中的电阻性开路故障,采用了数字电路的瞬态电流,IDDT测试和利用小波技术的定位方法。     

Low-power embedded SRAM with the current-mode write technique

In the traditional current-mode SRAMs, only the read operation is performed in the current mode. In this paper, we propose to use the current-mode technique in both the read and write operations. Due to the current mode operation, voltage swings at bit lines and data lines are kept very small during both read and write. Then, the ac power dissipation of bit lines and data lines, which is proportional to the voltage swing, can be significantly saved. A new current-mode 128×8 SRAM has been designed based on a 0.6 μm CMOS technology, and the new SRAM consumes only 30% of the power of an SRAM with current-mode read but voltage mode write operations. Besides a test chip for the new SRAM, it has also been embedded in an 8-bit 1.1-controller. Experimental results show good agreement with the simulation results and prove the feasibility of the new technique     

Soft-defect detection (SDD) technique for a high-reliability CMOSSRAM

A complete data retention test of a CMOS SRAM array accomplished at room temperature using the soft-defect detection (SDD) technique is reported. The SDD technique uses a connectivity analysis and cell-array current test to detect physical open faults that can cause data retention failures. An extensive circuit analysis was made to establish the operation theory and special circuit design features required for SDD. Complete SDD circuits have been developed and implemented into a 16 K CMOS SRAM module for a 32-b microcontroller. Full operation and effectiveness of the SDD technique were verified from a special experimental 16 K CMOS RAM module with built-in defective cells. the SDD technique can accomplish not only the retention test at room temperature, but also the detection of other defects that were heretofore impractical to detect using the conventional retention test technique of high-temperature bakes and functional tests     

Testing of static random access memories by monitoring dynamic power supply current

This article presents a correlation between dynamic power supply current and pattern sensitive faults in SRAMs. It is shown that the dynamic power supply current provides a window for observing the internal switching behavior of the memory cells. Switching of the logic state of a memory cell results in a transient current pulse in the power supply rails. A new current-testable SRAM structure is presented which can be used to isolate normal current transients from those resulting from pattern sensitivity. The new structure differs from traditional SRAM structures only in the way that power is distributed to the cells. The new structure allows for very high coverages of disturb-type pattern sensitivity using a simple algorithm of length 5n where n is the number of cells.     

Impact of Resistive-Bridging Defects in SRAM at Different Technology Nodes

We present a study on the effects of resistive-bridging defects in the SRAM core-cell, considering different industrial technology nodes: 90?nm, 65?nm and 40?nm. We have performed an extensive number of electrical simulations, varying the resistance value of the defects, the supply voltage, the memory size and the temperature. We identified the worst-case conditions maximizing failure occurrence in presence of defects. Results also show that resistive-bridging defects cause malfunction in the defective core-cell, as well as in non-defective core-cells located in the same row and/or column. Moreover, the weak read fault is the fault that is the most likely to occur due to resistive-bridging defects. Finally, the sensitivity of SRAMs to resistive-bridging defects increases with the advance of technology nodes.     

Defect Analysis and Defect Tolerant Design of Multi-port SRAMs

Multi-port SRAMs are often implemented using static random access memory (SRAM) due to its fast operation and the ability to support multiple read and write operations simultaneously, thus increasing data throughput in embedded systems and meeting the expected demands of parallel or pipelined microprocessors. With the continuous scaling of transistor feature size, designing low power robust memories and investigating their failure characteristics become critical. In this paper, we study the defects occurring in the multi-port SRAM cells. The memory is modeled at the transistor level and analyzed for electrical defects by applying a set of test patterns. Not only have existing models been taken into account in our simulation but also a new fault model, namely, simultaneous deceptive destructive read fault for the multi-port memory is introduced. In addition, we extend our study to the defect tolerant design of memories by proposing a differential current-mode sense amplifier for 3-port SRAM based register file. We examine the fault models of resistive defects within the SRAM cell and its failure boundary. A read disturb fault for multi-port memories is tested on the faulty cell by simultaneous read operations with different numbers of ports. Experimental results show that the proposed current-mode sensing scheme has improvements for memory fault-tolerance of resistive defects at 4.6× for dual-port read and 5.8× for 3-port read compared to voltage-mode sensing with 0.18 μm manufacturing process technology.