电迁移与工艺相关的关系

针对金属化电迁移,进行了失效机理与工艺相关性的研究;确定了金属晶粒尺寸与金属化可靠性之间存在着直接关系.金属平均晶粒直径与金属电迁移寿命受金属化溅射工艺条件的影响完全一致.提出了平均晶粒直径作为能够表征金属化可靠性的特征工艺参数的概念和金属化可靠性在线评价方法.     

VLSI电迁移效应及自制型电迁移测试系统

本文首先针对半导体可靠性测试项目一电迁移的基本原理、可靠性问题、电迁移效应的防护措施及失效判定作概括性的介绍。第二部分主要介绍自制电迁移自动测试系统开发的目的。并比较国外进口电迁移自动测试系统的效率，最后以实验证明自制电迁移自动测试系统的性能和功能可以取代进口的同类产品，达到降低企业成本及节省产品验证时程的目的。     

无铅焊料的电迁移效应

电迁移是金属原子沿着电流方向的移动。本文阐述了无铅焊料中电迁移的物理特性,由于焊点的特殊几何形状,电流拥挤效应将发生在焊点与导线的接点处;电迁移效应导致无铅焊料中金属间化合物（IMC）的生成与溶解,以及焊点下的金属化层（UBM）的溶解和消耗,使原子发生迁移并会产生孔洞,造成焊点破坏,缩短了焊点平均失效时间（MTTF）,从而带来可靠性问题。     

无铅焊点在电迁移与高低温冲击下的失效机理

研究了Cu/Sn-3.0Ag-0.5Cu/Cu焊点接头在电迁移与高低温冲击双重耦合作用下的失效机理。结果表明,在高低温冲击条件下,由于铜柱、钎料合金及镶样用环氧树脂的热膨胀系数不匹配,因此,焊点接头在高低温冲击过程中无法自由伸缩,在热疲劳的作用下,焊接接头易于在界面处形成裂纹,且随着时间的延长裂纹会发生扩展,造成焊点接头的有效横截面积减小,使得焊点接头的电阻增大、焦耳热增加,进而导致焊点接头发生熔化而失效。     

Sb掺杂对SnAgCu无铅焊点电迁移可靠性的影响

向Sn3.8Ag0.7Cu无铅焊膏中添加质量分数为1%的Sb金属粉末,研究了其焊点在电流密度为0.34×104A/cm2、环境温度150℃下的电迁移行为。通电245h后,阴极处钎料基体与Cu6Sn5IMC之间出现一条平均宽度为16.9μm的裂纹,阳极界面出现凸起带,钎料基体内部也产生了裂纹。结果表明:1%Sb的添加使焊点形成了SnSb脆性相,在高电流密度和高温环境下产生裂纹,缩短了焊点寿命,降低了电迁移可靠性。     

电子封装微互连中的电迁移

 随着电子产品不断向微型化和多功能化发展,电子封装微互连中的电迁移问题日益突出,已成为影响产品可靠性和耐久性的重要因素.本文在回顾铝、铜及其合金互连引线中电迁移问题的基础上,对目前微电子封装领域广泛采用的倒装芯片互连焊点结构中电迁移问题的几个方面进行了阐述和评价,其中包括电流拥挤效应、焦耳热效应、极化效应、金属间化合物、多种负载交替或耦合作用下的电迁移以及电迁移寿命预测等.     

Electromigration in aluminum/silicon/copper metallization due to the presence of a thin oxide layer

The effect of a thin layer of SiO₂ (50 nm) on the electromigration behavior of Al/ 0.8wt.%Si/0.5wt.%Cu metallization, passivated by spin-on-glass, phosphorus silicate glass and silicon nitride as part of the complementary metal oxide semiconductor technology fabrication process was studied. It is found that voids were formed along the edge of the metallization line as opposed to formation at triple point of grain boundaries. At the same stress current of 1 × 10⁶ A/cm², thicker metallization layer (600 nm) showed an improvement in median time to failure (MTF) (1.4 times) with smaller void size (0.2 to 0.4 μm) over one without an underlying oxide, whereas if the metallization thickness is thin (300 nm), the MTF is degraded (0.6 times) with larger void size formed (0.3 to 1.0 μm).     

无铅焊料的研究（4）——电迁移效应

电迁移是金属原子沿着电流方向的移动。阐述了无铅焊料中电迁移的物理特性,由于焊点的特殊几何形状,电流拥挤效应将发生在焊点与导线的接点处;电迁移效应导致无铅焊料中金属间化合物(IMC)的生成与溶解,以及焊点下的金属化层(UBM)的溶解和消耗,使原子发生迁移并会产生孔洞,造成焊点破坏,缩短了焊点平均失效时间(MTTF),从而带来可靠性问题。     

Three-Dimensional Thermoelectrical Simulation in Flip-Chip Solder Joints with Thick Underbump Metallizations during Accelerated Electromigration Testing

In flip-chip solder joints, thick Cu and Ni films have been used as under bump metallization (UBM) for Pb-free solders. In addition, electromigration has become a crucial reliability concern for fine-pitch flip-chip solder joints. In this paper, the three-dimensional (3-D) finite element method was employed to simulate the current-density and temperature distributions for the eutectic SnPb solder joints with 5-μm Cu, 10-μm Cu, 25-μm Cu, and 25-μm Ni UBMs. It was found that the thicker the UBM is the lower the maximum current density inside the solder. The maximum current density is 4.37 × 10⁴ A/cm², 1.69 × 10⁴ A/cm², 7.54 × 10³ A/cm², and 1.34 × 10⁴ A/cm², respectively, when the solder joints with the above four UBMs are stressed by 0.567 A. The solder joints with thick UBMs can effectively relieve the current crowding effect inside the solder. In addition, the joint with the thicker Cu UBM has a lower Joule heating effect in the solder. The joint with the 25-μm Ni UBM has the highest Joule heating effect among the four models.     

互连铝通孔电迁移特征及其可靠性研究

研究了超大规模集成电路铝互连系统中铝通孔的电迁移失效机理及其可靠性寿命评价技术.试验采用CMOS和BiCMOS两种工艺各3组的铝通孔样品,分别在三个温度、恒定电流的加速条件下试验,以通孔开路为电迁移失效判据,最后得到了在加速条件下互连铝通孔的电迁移寿命,其结果符合标准的威布尔分布,试验准确可行.通过电迁移模型对试验数据进行了拟合,得到了激活能、电流加速因子和温度加速因子,计算出了正常工作条件下通孔电迁移的寿命,完成了对铝通孔电迁移的研究和寿命评价.     

Barrier layer effect of tantalum on the electromigration in sputtered copper films on hydrogen silsesguioxane and SiO2

As IC devices scale down to the submicron level, the resistance-capacitance (RC) time delays are the limitation to circuit speed. A solution is to use low dielectric constant materials and low resistivity materials. In this work, the influence of underlying barrier Ta on the electromigration (EM) of Cu on hydrogen silsesquioxane (HSQ) and SiO₂ substrates was investigated. The presence of a Ta barrier not only improves the adhesion between Cu and dielectrics, but also enhances the crystallinity of Cu film and improves the Cu electromigration resistance. The activation energy obtained suggests a grain boundary migration mechanism and the current exponent calculated indicates the Joule heating effect.     

A Reliability Statistics Perspective on the Pitfalls of Standard Wafer-Level Electromigration Accelerated Test (SWEAT)

Standard Wafer Level Electromigration Accelerated Test (SWEAT) has become a common fast wafer level reliability test for electromigration in industry. However, its ability to detect changes in processes and its correlation with conventional electromigration test result has come under close scrutiny. From the perspective of reliability statistics, SWEAT also has other pitfalls that render its test results questionable. In this work, these pitfalls are highlighted, and alternative wafer-level electromigration tests are discussed. The arguments that the SWEAT is not appropriate for evaluation of electromigration of metal lines are presented. SWEAT as a tool to evaluate electromigration lifetime of metal lines is not recommended unless the pitfalls are seriously looked at.     

Electromigration Reliability and Morphologies of Cu Pillar Flip-Chip Solder Joints with Cu Substrate Pad Metallization

The Cu pillar is a thick underbump metallurgy (UBM) structure developed to alleviate current crowding in a flip-chip solder joint under operating conditions. We present in this work an examination of the electromigration reliability and morphologies of Cu pillar flip-chip solder joints formed by joining Ti/Cu/Ni UBM with largely elongated ∼62 μm Cu onto Cu substrate pad metallization using the Sn-3Ag-0.5Cu solder alloy. Three test conditions that controlled average current densities in solder joints and ambient temperatures were considered: 10 kA/cm² at 150°C, 10 kA/cm² at 160°C, and 15 kA/cm² at 125°C. Electromigration reliability of this particular solder joint turns out to be greatly enhanced compared to a conventional solder joint with a thin-film-stack UBM. Cross-sectional examinations of solder joints upon failure indicate that cracks formed in (Cu,Ni)₆Sn₅ or Cu₆Sn₅ intermetallic compounds (IMCs) near the cathode side of the solder joint. Moreover, the ~52-μm-thick Sn-Ag-Cu solder after long-term current stressing has turned into a combination of ~80% Cu-Ni-Sn IMC and ~20% Sn-rich phases, which appeared in the form of large aggregates that in general were distributed on the cathode side of the solder joint.     

Electromigration studies on Sn(Cu) alloy lines

The Cu alloying effect in the Sn(Cu) solder line has been studied. The Sn0.7Cu solder line has the most serious electromigration (EM) damage compared to pure Sn and Sn3.0Cu solder lines. The dominant factor for the fast EM rate in Sn0.7Cu could be attributed to the relatively small grain size and the low critical stress, i.e., the yielding stress of the Sn0.7Cu solder line. Also, we found that the shortest Sn0.7Cu solder line, 250 μm, has the most serious EM damage among three solder lines of different lengths. The back stress induced by EM might not play a significant role on the EM test of long solder lines. A new failure mode of EM test was observed; EM under an external tensile stress. The external stress is superimposed on the stress profile induced by EM. As a result, the hillock formation was retarded at the anode side, and void formation was enhanced at the cathode.