泛在网络技术及其应用

泛在网络是硬件、软件、系统、终端和应用的融合,它把网络空间、信息空间和人们生活的物理空间集成为一个整体,从而使网络如同空气和水一样无所不在、自由地融入人们的生活和工作之中。关键技术包括智能终端系统、基础网络技术以及应用技术,广泛应用在食品/药品安全、市政监控、生产监控、家庭电信融合、军事应用等领域,目前在互联互通、安全、资源、实施步骤和行业融合等方面存在问题。     

泛在网络技术及其应用

泛在网络(Ubiquitous Network,UN)是硬件、软件、系统、终端和应用的融合,它把网络空间、信息空间和人们生活的物理空间集成为一个整体,从而使网络如同空气和水一样无所不在,自由地融入人们的生活和工作之中。关键技术包括智能终端系统、基础网络技术以及应用技术,广泛应用在食品/药品安全、市政监控、生产监控、家庭电信融合和军事应用等领域,目前在互联互通、安全、资源、实施步骤和行业融合等方面存在问题。     

物联网的技术路线及属性形成

区别于传统强调人与人连接的互联网,物联网是互联网的技术扩展和应用延伸。本文阐述了物联网融合传感器网络、EPC系统和泛在网络的泛在多元信息获取方式,利用电信网、互联网以及广电网等通信网络和各类接入网络实现泛在数据传送,为社会不同行业的应用需求提供泛在服务能力。指出物联网的技术路线是在现有互联网的基础上,通过借鉴和吸收相关学科的研究和应用成果,形成的一个物理空间与虚拟空间、人与物交叉融合的信息服务基础平台;物联网的根本属性是泛在化,即泛在网络,具体体现在泛在互联、泛在技术支持和泛在应用整合等方面。     

基于泛在学习环境的网络学习空间设计

随着信息技术的发展,我们进入了移动学习时代,学习者可以在任何时间、任何地点,通过移动智能终端实现开放学习。文章在分析泛在学习和网络学习空间的概念和特征的理论基础上,得出了构建泛在学习环境下网络学习空间设计的原则,最后提出了泛在学习环境下网络学习空间的设计模型。     

泛在感知网络的发展及趋势分析

从MarkWeise先生提出泛在网络以来．泛在网络无所不在的网络特性就常常为人们所讨论。泛在网络是一种以人为核心,强调了多种通信和感知技术的网络。本文阐述了泛在感知网络的基础技术模块．包括RFID技术、无线传感网络、云计算、近距离通信技术以及可能的泛在感知网体系架构。通过衡量不同的应用场景和可能的前景及当前的壁垒,文章讨论了泛在感知网对于通信产业的影响。泛在感知网的要素正代表了精确定位、有效识别和随时互联这3个对未来社会发展起决定作用的要素．泛在感知网络一定会成为未来5年或lO年内推动商业发展的重要技术驱动力。     

基于无线网络的图书馆泛在化服务模式研究

图书馆是人们文化生活中必不可少的一部分，随着科技的发展，图书馆的服务模式也在发生着日新月异的变化。网络是科技发展中不断得以更新的技术，无线网络也是在新的科技条件下应运而生的产物。无线网络的应用范围非常广，给人们的生活及工作提供了极大的方便。本文就从图书馆泛在化服务的概念入手，对基于无线网络的图书馆泛在化服务形式及服务实现模式进行分析，在明确无线网络在图书馆泛在化服务中发挥作用的基础上，探讨其水平提高的措施。     

面对泛在网络发展的思考

泛在网络作为一项新兴的网络技术,目前正成为全球性的研究热点。介绍了泛在网络的特点和应用、环境特点,以及世界各国在泛在网络方面的研究和应用．分析了泛在网络面临的问题及解决对策,对中国泛在网络发展策略作了探讨。     

泛在网络发展现状分析

通过对泛在网络的概要分析,归纳出泛在网络的抽象模型,即网络融合层、业务汇聚层和应用汇聚层;分析了泛在网络的研究概况,并借助典型案例论述了泛在网络的发展趋势和重要性。     

拟态防御技术构建国家信息网络空间内生安全

<正>自信息革命开始以来,网络正深刻地改变着人们的生产生活方式,成为继海、陆、空、天之后的"第五维空间",因网络空间存在泛在化的基于未知漏洞或后门的不确定性威胁,使得少数人或团体组织利用少量的资源就能肆意践踏个人信息乃至公共服务系统安全,危及网络空间秩序和社会稳定,对国家主权、安全、发展带来了诸多新的挑战。党的十八大以来,我国提出网络强国战略,对提高网络综合治理能力、加强网络安全、加速推动信息领域核心技术突破、推进全球互联网治理体系变革等方面提出了新要求,加快突破重点核心技术,全面推动构建网络空间命运共同体。     

普适计算与泛在网络

本文简要描述了普适计算的概念及普适计算的研究体系;泛在网络的概念及与普适计算的关系.简要介绍了移动泛在网络发展的愿景.在此基础上,较详细地讨论了我国专家们在泛在网络研究领域中提出的"环境感知泛在网络(AUN)"的概念和框架结构.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.