Microstructure and fracture behaviour of Ti<Subscript>3</Subscript>Al/TC4 dissimilar materials joints welded by electron beam

Electron beam was used to join TC4 alloy to Ti₃Al-based alloy. The composition of the weld was analysed by XRD and TEM and the results showed that the weld mainly composed of α′ martensites. The change of heat input had little influence on the composition of the weld but can make the grain size increasing. The fracture path of the joints was mainly decided by the microstructure of the weld and started from coarse grain zone to HAZ and base metal of Ti₃Al alloy.     

Site preference of Zr in Ti<Subscript>3</Subscript>Al and phase stability of Ti<Subscript>2</Subscript>ZrAl

The site preference of Zr atoms in Ti ₃Al and the phase stability of Ti2ZrAl are examined using first-principles electronic structure total energy calculations. Of the sixteen possible ways in which Ti, Zr and Al atoms can be arranged, in the lattice sites corresponding to D0₁₉ structure of Ti₃Al, to obtain Ti₂ZrAl, it is shown that Zr atoms prefer to get substituted at the Ti sites. It is further shown that among the seven crystal structures considered, D0₁₉-like and L1₂-like are the competing ground-state structures of Ti₂ZrAl. The above results are in agreement with the experimental results reported in the literature. Calculated values of equilibrium lattice parameters, heat of formation and bulk modulus of Ti₂ZrAl are presented. The basis for the structural stability and bonding are analysed in terms of the density of states. Between the two possibleB2-like structures, Ti₂ZrAl shows enhanced stability for the one where Zr is substituted in the Ti sublattice, which again is in agreement with the experimental observation.     

Enhanced Superconducting Properties of Air-Processed GdBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>7-δ</Subscript> Single Domains with BaCO<Subscript>3</Subscript>/BaCuO<Subscript>2−<Emphasis Type="Italic">x</Emphasis></Subscript> Addition

Single domain GdBa₂Cu_7-δ (Gd123) bulk superconductors were fabricated in air by top-seeding melt-texture growth. Performance of the air-processed Gd123 was successfully enhanced by addition of both BaCO₃ and BaCuO_2−x , which suppress the formation of Gd_1+x Ba_2−x Cu₃O_7-δ solid solutions. The optimum doping amount ranges from 0.05 to 0.15, M BaCO₃ and 0.05 to 0.1, M BaCuO_2−x per molar Gd123. The distribution of the second phase particles was observed by scanning electron microscopy. A narrow band formed by Gd₂BaCuO₅ particle concentration appeared around the seeding zone in both a–b plane and c-growth sector in Gd123 single grain. Trapped magnetic field density reached 0.67, T for sample with 24 mm in diameter and 8, mm in thickness and a high critical current density J _c up to 91,200, A/cm² was achieved at 77, K under self-field.     

Synthesis and Optical Studies of Superconducting MgB<Subscript>2</Subscript> Thin Films

Synthesis and optical transmission of MgB₂ thin films on optically transparent glass are reported. In the 400–1000 nm regime as deposited films show high metallic reflectivity and very little transmission. After deposition, the films were annealedex situ and rendered superconducting withT _c of 38 K, approaching that of the bulk material. The reaction conditions where quite soft ∼ 10 min at 550°C. The optical absorption coefficient,α and photon energy,E followed a Tauc-type behavior, (αE)^1/2=β _T(E −E _g). The band gap (E _g) was observed to peak at 2.5 eV; but, the slope parameterβ _Tbehaved monotonically with reaction temperature. Our results indicate that an intermediate semiconducting phase is produced before the formation of the superconducting phase; also optical measurements provide valuable information in monitoring the synthesis of MgB₂ from its metallic constituents. In addition these films have interesting optical properties that may be integrated into optoelectronics.     

Nano Fe<Subscript>3</Subscript>O<Subscript>4</Subscript> Induced Fluxoid Jumps and Low Field Enhanced Critical Current Density in MgB<Subscript>2</Subscript> Superconductor

Nano particle of Fe₃O₄ (nFe₃O₄) up to 6 at% were doped in the superconducting MgB₂ samples. Despite the strong ferromagnetic nature of Fe₃O₄, both the ac susceptibility and the resistivity measurements show that up to 4 at% of Fe₃O₄, T _c =38 K is not changed, whereas for 6% T _c decreases by 6 K. This indicates that a low concentration of Fe does not substitute either the Mg or B sites and probably occupies the intergrain spaces. For 0.5% doped Fe₃O₄, an increase in J _c with respect to the pure MgB₂ samples is observed in the lower field and temperature regions (H<2 T and 20 K) indicating an enhanced flux pinning and the magnetic activation, i.e., the interaction between the magnetic dipole of Fe ion and the vortices is weak in comparison to the effective pinning potential. Whereas, at H>2 T, J _c of the doped samples is always less than that of MgB₂, and the activation is dominant in comparison with the effective pinning potential provided by the doping. Flux jumps are observed in lower T and H regions for the samples doped up to 1% nFe₃O₄ only. Magnetization plots of higher Fe content samples exhibited clear paramagnetic background. Mossbauer measurements for the higher (4, 6 at%) nFe₃O₄ doped MgB₂ samples show that at RT, the hyperfine field for both samples is ∼100 kOe and ∼120 kOe at 90 K. This means that the nFe₃O₄ particles decompose and form possibly an intermetallic Fe-B phase in the matrix.     

Enhancement ofT c (∼ 103 K) in calcium-free Tl2Ba2CuO x (2201) compound

EnhancedT _c in calcium-free Tl compounds of the series Tl _m Ba₂Ca _n−1Cu _n O _x (2201) has been reported. Three different starting compositions (2201, 1201 and 2202) were studied extensively with varying conditions of preparation. Under optimized conditions (sintering temperature 970°C and duration 3–10 min) the highestT _c(onset) ranges from 103 K to ∼ 115 K andT _c (zero) ∼ 95 K was found. XRD studies showed the transformation of all the three nominal compositions into 2201 phase with differentT _cs.     

Polarization Effect in ESR of Co Doped CuGeO<Subscript>3</Subscript>

Electron spin resonance of a single crystal of CuGeO₃ doped with 2% of Co has been studied at f = 99 GHz in temperature range 1.8–50 K. Contributions to ESR absorption from Cu²⁺ chains and from Co²⁺ ions were derived. It is found that functions obtained for ESR integrated intensities: Curie-Weiss for Cu²⁺ (χCu ∼ C _Cu/(T + Θ), with Θ = 92 K) and Curie for Co²⁺ (χCo ∼ C _Co/T) are well consistent with temperature dependence of static magnetic susceptibility. Strong dependence of ESR absorption on polarization of oscillating magnetic field was discovered for Co²⁺ contribution. Polarization effect was studied for magnetic field applied along a, b and c directions. Values of g-factors of resonance lines are presented.     

Thermodynamic and Magnetic Properties of Superconductors with Anisotropic Energy Spectrum,MgB<Subscript>2</Subscript>

The behavior of the superconducting transition temperature T _c and that of the jump of electron heat capacity (C _S −C _N )/C _N of the compound MgB₂ at T=T _c with substitution of boron and magnesium atoms by other atoms from the periodic table of the elements, corresponding to introduction of additional electrons or holes in this compound are researched. The microscopic superconductivity theory in MgB₂ systems in the magnetic field parallel to the crystallographic axis (H ‖ c) is built. The magnitude of the upper critical field H _c2 is determined and its temperature dependence in two-band systems with different and identical topologies of Fermi surface cavities of the corresponding bands is studied. The obtained results and their comparisons with the experimental data demonstrate that all kinds of anomalies of the physical properties of the compound MgB₂ are effectively described by the two-band model.     

Room-Temperature Photomagnetic Effect of Fe<Subscript>3</Subscript>Ga<Subscript>4</Subscript> Grown on GaAs Substrates

Ga–As–Fe composite films prepared by molecular beam epitaxy at 600°C on GaAs(100) substrates with the stacking sequence of [100-nm GaAs/50-nm Fe₃Ga_{2− x} As _x /100-nm GaAs] exhibit the distinct photo-enhanced magnetization at room temperature. Transmission electron microscopy reveals the formation of metamagnetic Fe₃Ga₄ grains on the sample surface. Illumination power dependence of the enhanced magnetization has been carefully compared with the antiferromagnetic-type magnetization–temperature (M–T) curve (Neel temperature of T _N = 340–390 K), from which we have discussed the existence of photon-mode photo-enhanced magnetization of some sort in addition with the enhancement due to the light-induced heating.     

Effects of talc and clay addition on pressureless sintering of porous Si<Subscript>3</Subscript>N<Subscript>4</Subscript> ceramics

Porous Si₃N₄ ceramics were successfully synthesized using cheaper talc and clay as sintering additives by pressureless sintering technology and the microstructure and mechanical properties of the ceramics were also investigated. The results indicated that the ceramics consisted of elongated β-Si₃N₄ and small Si₂N₂O grains. Fibrous β-Si₃N₄ grains developed in the porous microstructure, and the grain morphology and size were affected by different sintering conditions. Adding 20% talc and clay sintered at 1700°C for 2 h, the porous Si₃N₄ ceramics were obtained with excellent properties. The final mechanical properties of the Si₃N₄ ceramics were as follows: porosity, P ₀ = 45·39%; density, ρ = 1·663·g·cm⁻³; flexural strength, σ _b (average) = 131·59 MPa; Weibull modulus, m = 16·20.     

Epitaxial Growth of CeO<Subscript>2</Subscript>/YSZ/CeO<Subscript>2</Subscript> Buffer Layers on Textured Ni Substrates for YBCO Conductors

CeO₂/YSZ/CeO₂ buffer layers were deposited on textured Ni substrates byin situ pulsed laser deposition. The out-of-plane texture and in-plane texture of the buffer layers were characterized by X-ray diffraction ω-scans and ϕ-scans. Using this CeO₂/YSZ/CeO₂ architecture as the buffer layers, high quality YBCO films with a zero-resistanceT _c about 90 K and a self-field critical current densitiesJ _c above 10⁶ A/cm² at 77 K can be obtained on Ni substrates.     

Study of gel grown mixed crystals of Ba<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ca<Subscript>(1−<Emphasis Type="Italic">x</Emphasis>)</Subscript>(IO<Subscript>3</Subscript>)<Subscript>4</Subscript>

The growth of mixed crystals of Ba _x Ca_1−x (IO₃)₄ were carried out with simple gel method. The effect of various parameters such as pH of gel solution, gel concentration, gel setting time, concentration of reactants on the growth was studied. Crystals having different morphologies and habits were obtained. The grown crystals were characterized by XRD, FT-IR, EDAX, TGA, DTA and DSC.     

Low temperature heat capacity measurements on HoBa2Cu3O7−δ

Specific heats were measured on two samples of HoBa₂Cu₃O_7−δ in the temperature range 1·7 K to 10 K. In addition to the known Schottky behaviour, a peak in the specific heat curve was observed near 7·9 K in both the samples. This peak is probably due to impurity contribution and the specific heat measurements were undertaken in holmium oxide (Ho₂O₃), which was the suspected impurity. However, no peak was observed in the specific heat curve of holmium oxide     

Effect of heating rate on the microstructural and magnetic properties of nanocrystalline Fe<Subscript>81</Subscript>Si<Subscript>4</Subscript>B<Subscript>12</Subscript>P<Subscript>2</Subscript>Cu<Subscript>1</Subscript> alloys

The effect of heating rate on the structural and magnetic properties of the nanocrystalline Fe₈₁Si₄B₁₂P₂Cu₁ alloy has been investigated. Amorphous Fe₈₁Si₄B₁₂P₂Cu₁ alloy was annealed at 753 K for 180 s at different heating rates ranging from 0.05 to 5 K/s in protective argon atmosphere. The structural and magnetic properties of the as-quenched and annealed alloys were studied using X-ray diffractometer (XRD), differential scanning calorimeter (DSC), vibrating sample magnetometer (VSM), and B–H loop tracer, respectively. Amorphous precursor prepared by industry-grade raw materials is obtained. The increase of heating rate is found to be significantly effective in decreasing the grain size of α-Fe(Si) phase, but the grain size increases at higher heating rate. The volume fraction of α-Fe(Si) phase shows a monotonic decrease with the increase of the heating rate. The coercivity H _c markedly decreases with increasing heating rate and exhibits a minimum at the heating rate of 0.5 K/s, while the saturation magnetization, M _s, shows a slight decrease. These results suggest that the effect of heating rate on H _c and M _s is originated from the changes of grain size and the volume fraction of α-Fe(Si) phase.     

Synthesis and characterization of monoclinic rare earth titanates,RE<Subscript>2</Subscript>Ti<Subscript>2</Subscript>O<Subscript>7</Subscript> (RE = La,Pr, Nd), by a modified SHS method using inorganic activator

The nano particles of phase pure rare earth titanates, synthesized by the SHS technique, get well sintered at lower temperatures compared to the compounds formed by the solid-state method. These dielectrics are highly stable and can be used in the microwave frequency range. We report here a modified SHS method to synthesize phase pure monoclinic RE₂Ti₂O₇ at 350°C through the oxide/nitrate precursors using an inorganic compound, ammonium acetate, in place of the general type of organic activators such as urea, alanine etc. The nanopowders of La₂Ti₂O₇, Pr₂Ti₂O₇ and Nd₂Ti₂O₇ on heating exhibit an exothermic behaviour with a broad maxima in the range 267–284°C and become endothermic with maxima in the range 1043–1220°C; interestingly, the phase pure crystalline material is formed at the temperature of exothermic maxima, as confirmed by XRD.     

Role of Ti diffusion on the formation of phases in the Al<Subscript>2</Subscript>O<Subscript>3</Subscript>–Al<Subscript>2</Subscript>O<Subscript>3</Subscript> brazed interface

Diffusivities of Ti, Cu, Al and Ag in the interface of Al₂O₃–Al₂O₃ braze joints using Ag–Cu–Ti active filler alloy, have been calculated by Matano–Boltzman method. The Matano plane has been identified for each elemental diffusion at various brazing temperatures. The diffusivities of Ag, Cu and Al are almost insignificant on formation of interface during brazing, whereas the diffusivity of Ti changes significantly with the brazing temperature and controls the formation of different reaction product in the interface. Presence of TiO and Ti₃Cu₃O phases in the interface has been confirmed by transmission electron microscopy (TEM).     

Phase formation of superconducting MgB<Subscript>2</Subscript> at ambient pressure

MgB₂ superconductor has been synthesized using a simple technique at ambient pressure. The synthesis was carried out in helium atmosphere over a wide range of temperatures. Magnesium was employed in excess to the stoichiometry to prevent the decomposition of MgB₂. Samples of MgB₂ thus prepared have been almost free from MgO as compared to other methods. Resistivities of the samples are quite low with residual resistivity ratio (RRR) of around 3.T _c (R = 0) is 38.2-38.5 K with ΔT _C of 0.6–1.0 K. Comparative studies of various methods of low pressure synthesis have been presented.     

Effect of precipitates on damping capacity and mechanical properties of Ti–6Al–4V alloy

The present study was concerned with the effects of over-aging on damping property and fracture toughness in Ti–6Al–4V alloy. Damping property and toughness become important factors for titanium implants, which have big modulus difference between bone and implant, and need high damping capacity for bone-implant compatability. Widmanstätten, equiaxed, and bimodal microstructures containing fine α₂ (Ti₃Al) particles were obtained by over-aging a Ti–6Al–4V alloy. Over-aging heat treatment was conducted for 200 h at 545 °C. Fracture toughness, Charpy impact, and bending vibration tests were conducted on the unaged and the over-aged six microstructures, respectively. Charpy absorption energy and apparent fracture toughness decreased as over-aging was done, even if the materials were strengthened by precipitation of very fine and strong α₂-Ti₃Al particles. On the other hand, damping properties were enhanced by over-aging in Widmanstätten and equiaxed microstructures, but was weakened in bimodal microstructure due to the softening of tempered martensite and the decreasing of elastic difference between tempered martensite and α phase contained α₂ particles, etc. These data can provide effective information to future work about internal damping and fracture properties of Ti–6Al–4V alloy.     

High-temperature oxidation behaviour of Ti<Subscript>3</Subscript>Si<Subscript>(1−<Emphasis Type="Italic">x</Emphasis>)</Subscript>Al<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>C<Subscript>2</Subscript> in air

The oxidation behaviours of bulk Ti₃Si_(1−x)Al _x C₂ prepared by hot pressing were investigated. The results showed that the isothermal oxidation behaviour of Ti₃SiC₂ obeyed a parabolic law between 900 and 1100°C, and followed a two-step parabolic rate law between 1200°C and 1300°C. The cyclic oxidation behaviour of material is assumed to obey a three-step parabolic rate law at 1100°C and 1200°C. The calculated activation energy of isothermal oxidation is 101·43 kJ·mol⁻¹. The oxide layers consisted of a mass of α-Al₂O₃ and little TiO₂ and SiO₂ are observed on Ti₃SiC₂ as a dense and adhesive protect scale. The oxidation mechanism varies with the additive aluminum that greatly improves the oxidation resistance of Ti₃SiC₂.     

Diffusion bonding of Ti<Subscript>3</Subscript>AlC<Subscript>2</Subscript> ceramic via a Si interlayer

Based on the structure characteristic of Ti₃AlC₂ and the easy formation of Ti₃Al_{1 − x} Si _x C₂ solid solution, a Si interlayer was selected to join Ti₃AlC₂ layered ceramic by diffusion bonding method. Joining was performed at 1,300–1,400 °C for 120 min under 5 MPa load in an Ar atmosphere. The phase composition and interface microstructure of the joints were investigated by XRD, SEM and EPMA. The results revealed that Ti₃Al(Si)C₂ solid solution formed at the interface. The mechanism of bonding is attributed to silicon diffusing inward the Ti₃AlC₂. The strength of joints was evaluated by a 3-point bending test. The jointed specimens exhibit a high flexural strength of 285 ± 11 MPa, which is about 80% of that of the Ti₃AlC₂; and retain this strength up to 1,000 °C. The high mechanical performance of the joints indicates that diffusion bonding via a Si interlayer is effective to bond Ti₃AlC₂ ceramic.