Formation of thermally stable Ni monosilicide using an inductively coupled plasma process

The effect of argon plasma treatment on the structural and electrical properties of Ni silicides has been investigated. Electron-beam-evaporated Ni films on Si substrates are Ar plasma-treated by an inductively coupled plasma (ICP) reactor. For silicidation reactions, all the samples with and without the Ar plasma treatment are rapid-thermal annealed (RTA) at temperatures of 500–750°C in a nitrogen ambient. It is shown that the Ar plasma-treated samples produce better electrical and structural properties across the whole temperature range as compared with the untreated samples. It is further shown that the Ar plasma-treated samples contain nitrogen, which plays an important role in improving the morphological stability and the electrical properties of the silicide films.     

Internal linear inductively coupled plasma (ICP) sources for large area FPD etch process applications

A large area (830 mm×1020 mm) inductively coupled plasma source with a six internal straight antennas was developed for large area FPD (Flat Panel Display) etch process applications and the effects of magnetic fields employing permanent magnets on the plasma characteristics were investigated. Using six straight antennas connected in series into plasma and though the induction of strong electric field into the plasma by the antennas, high-density plasma on the order of 10¹¹ cm⁻³ could be obtained by applying above 1500 W power to the antennas. By employing the magnetic fields perpendicular to the antenna currents using permanent magnets, improved plasma characteristics such as increase of the ion density and decrease of both electron temperature and plasma potential could be achieved in addition to the stability of the plasma possibly due to the reduction of the electron loss. However, the application of the magnetic field decreased the plasma uniformity slightly even though the uniformity within 10% could be maintained in the 800 mm processing area.     

基于COMSOL的感应耦合等离子体刻蚀机流体模型

流体动力学模型被广泛地用于感应耦合等离子体（ICP）的仿真,即使连续性方程在这样低的压力下通常会被认为是不适用的。本课题模拟了一个真实的充满氩等离子体的ICP刻蚀机。本模拟基于一个多物理场仿真软件——COMSOL,一种偏微分方程求解器。正如其他的等离子体流体模型所示,在本模型中用漂移扩散近似描述离子,对电子运动用准中性假设,用简化的Maxwell方程计算电磁场,用电子能量方程求解电子温度,用Navier-Stokes方程来描述中性背景气体。本文展示了在功率200W和气压1.33Pa（10 mTorr）条件下的2维等离子体参数分布情况。进而对比了电子数密度和电子温度随功率的变化。我们确信在预测值与真实值之间存在不一致情况,造成这种差异的原因主要是电子能量分布函数（eedf）的麦克斯韦假设以及对碰撞截面和反应速率的缺失。     

Fluid model of inductively coupled plasma etcher based on COMSOL

Fluid dynamic models are generally appropriate for the investigation of inductively coupled plasmas. A commercial ICP etcher filled with argon plasma is simulated in this study. The simulation is based on a multiphysical software, COMSOLTM, which is a partial differential equation solver. Just as with other plasma fluid models, there are drift-diffusion approximations for ions, the quasi-neutrality assumption for electrons movements, reduced Maxwell equations for electromagnetic fields, electron energy equations for electron temperatures and the Navier-Stokes equa-tion for neutral background gas. The two-dimensional distribution of plasma parameters are shown at 200 W of power and 1.33 Pa (10 mTorr) of pressure. Then the profile comparison of the electron number density and temperature with respect to power is illustrated. Finally we believe that there might be some disagreement between the predicted values and the real ones, and the reasons for this difference would be the Maxwellian eedf assumption and the lack of the cross sections of collisions and the reaction rates.     

Tensile tests of micro anchors anodically bonded between Pyrex glass and aluminum thin film coated on silicon wafer

Micro anchor is a kind of typical structures in micro/nano electromechanical systems (MEMS/NEMS), and it can be made by anodic bonding process, with thin films of metal or alloy as an intermediate layer. At the relative low temperature and voltage, specimens with actually sized micro anchor structures were anodically bonded using Pyrex 7740 glass and patterned crystalline silicon chips coated with aluminum thin film with a thickness comprised between 50 nm and 230 nm. To evaluate the bonding quality, tensile pulling tests have been finished with newly designed flexible fixtures for these specimens. The experimental results exhibit that the bonding tensile strength increases with the bonding temperature and voltage, but it decreases with the increase of the thickness of Al intermediate layer. This kind of thickness effect of the intermediate layer was not mentioned in the literature on anodic bonding.     

Ohmic contact formation on inductively coupled plasma etched 4H-silicon carbide

We report on the investigation of ohmic contact formation using sputtered titanium-tungsten contacts on an inductively coupled plasma (ICP) etch-damaged 4H-SiC surface. Transfer length method (TLM) measurements were performed to characterize how ICP-etch damage affects the performance of ohmic contacts to silicon carbide. In order to recover etch damage, high-temperature oxidation (1250°C for 1 h) was evaluated for one of the samples. Some of the etch damage was recovered, but it did not fully recover the etch damage for the sample etched with medium platen power (60 W). From our TLM measurements, the specific contact resistance (ρ _C of sputtered titanium tungsten on highly doped n⁺-type 4H-SiC epilayers with a doping of 1.1×10¹⁹ cm⁻³ for the unetched reference sample, 30-W etched, and 60-W etched with and without sacrificial oxidation was as low as 3.8×10⁻⁵ Ωcm², 3.3×10⁻⁵ Ωcm², 2.3×10⁻⁴ Ωcm², and 1.3×10⁻³ Ωcm², respectively. We found that the low-power (30 W) ICP-etching process did not affect the formation of ohmic contacts, and we did not observe any difference between the unetched and the 30-W etched sample from our TLM measurements, having the same value of the ρ _C. However, medium-platen-power (60 W) ICP etching showed significant influence on the ohmic contact formation. We found that the specific contact resistance is highly related to the surface roughness and quality of the metals, and the lower, specific contact resistance is due to smoother and denser ohmic contacts.     

Investigation of inductively coupled plasma gate oxide on lowtemperature polycrystalline-silicon TFTs

By optimizing the inductively coupled plasma (ICP) oxidation condition, a thin oxide of 10 nm has been grown at 350°C to achieve excellent gate oxide integrity of low leakage current<5×10^-8 A/cm² (at 8 MV/cm), high breakdown field of 9.3 MV/cm and low interface trap density of 1.5×10¹¹ /eV cm². The superior performance poly-Si TFTs using such a thin ICP oxide were attained to achieve a high ON current of 110 μA/μm at V_D=1 V and V_G=5 V and the high electron field effect mobility of 231 cm²/V·S     

基于电感耦合氧等离子体金刚石膜表面修饰的功率优化

采用电感耦合等离子体（ICP）氧等离子体刻蚀金刚石膜,探寻金刚石膜表面处理的方法。通过分析不同ICP射频源功率和不同偏压源功率下的刻蚀速率,研究了金刚石膜刻蚀的机理作用;通过拉曼光谱进行表征,分析刻蚀前后sp2与sp3的含量。结果表明,在ICP氧等离子体刻蚀的过程中,sp3键部分转化为sp2键;刻蚀后表面粗糙度降低;当...     

Selective etching of (Ba,Sr)TiO3 thin films over silicon in an inductively coupled plasma

In this work, we investigated etching characteristics of BST thin films and higher selectivity of BST over Si using inductive coupled O₂/Cl₂/Ar plasma (ICP) system. The maximum etch rate of BST thin films and selectivity of BST over Si were 61.5 nm/min at a O₂ addition of 1 sccm, 9.52 at a O₂ addition of 4 sccm into the Cl₂(30%)/Ar(70%) plasma, respectively. Plasma diagnostics was performed by Langmuir probe (LP), optical emission spectroscopy (OES) and quadrupole mass spectrometry (QMS). These results confirm that the increased etch rates at O₂ addition of 1 sccm is the result of the enhanced chemical reaction between BST and Cl radicals and an ion bombardment effect.     

Studies on non-thermal atmospheric pressure plasma process conditions for groove formation on silicon nitride for silicon solar cells

Fabrications of narrow electrode grooves for front electrodes on single crystalline silicon solar cells were examined using surface discharges, in which the electrode grooves were formed by etching a silicon nitride (SiN) film on substrates. The surface discharge could effectively etch the SiN film within 10 s and that a high etching rate more than 1800 nm/min was obtained. An optimum ratio of Ar gas, which was enough to maintain the formation of innumerable surface streamers, was 2.3 times larger than that of etching gas, and a short-term etching with the high discharge voltage was effective to narrow groove width.     

基于COMSOL的感应耦合等离子体二维模拟与实验数据对比

A two-dimensional axisymmetric inductively coupled plasma(ICP) model,and its implementation in the COMSOL multiphysical software,is described.The simulations are compared with the experimental results of argon discharge from the gaseous electronics conference RF reference cell in the inductively coupled plasma mode.The general trends of the number density and temperature of electrons with radial scanning are approximately correct.Finally,we discuss the reasons why the comparisons are not in agreement,and then propose an improvement in the assumptions of the Maxwellian electron energy distribution function and reaction rate.     

The etching process and mechanism analysis of Ta-Sb2Te3 film based on inductively coupled plasma

Compared to the conventional phase change materials, the new phase change material Ta-Sb₂Te₃ has the advantages of excellent data retention and good material stability. In this letter, the etching characteristics of Ta-Sb₂Te₃ were studied by using CF₄/Ar. The results showed that when CF₄/Ar = 25/25, the etching power was 600 W and the etching pressure was 2.5 Pa, the etching speed was up to 61 nm/min. The etching pattern of Ta-Sb₂Te₃ film had a smooth side wall and good perpendicularity (close to 90°), smooth surface of the etching (RMS was 0.51nm), and the etching uniformity was fine. Furthermore, the mechanism of this etching process was analyzed by X-ray photoelectron spectroscopy (XPS). The main damage mechanism of ICP etching in CF4/Ar was studied by X-ray diffraction (XRD).     

感应耦合等离子刻蚀二维低纳米级GaAs基光子晶体的过程优化研究

本文主要描述了用感应耦合等离子刻蚀系统（ICP）制作具有低纳米级空气孔阵列二维GaAs基光子晶体的过程。通过改变ICP功率,RF功率以及腔压三个参数,对光子晶体空气孔的侧壁和表面特性进行了系统的研究。结果表明,ICP功率的变化对空气孔侧壁和表面光滑度没有明显的影响,相反,RF功率和腔压对其起着重要的作用。最后通过优化各种过程参数,成功地获得了具有垂直平滑,直径约为130nm空气孔的光子晶体。本文ICP系统参数对光子晶体特性的影响主要通过扫描电镜进行分析,另外这种制作方法不局限于GaAs 基光子晶体,也可以应用于其它材料光子晶体的制作.     

Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals

This paper mainly describes fabrication of two-dimensional GaAs-based photonic crystals with low nanometer scale air-hole arrays using an inductively coupled plasma (ICP) etching system. The sidewall profile and surface characteristics of the photonic crystals are systematically investigated as a function of process parameters including ICP power, RF power and pressure. Various ICP powers have no significant effect on the verticality of air-hole sidewall and surface smoothness. In contrast, RF power and chamber pressure play a remarkable role in improving sidewall verticality and surface characteristics of photonic crystals indicating different etching mechanisms for low nanometer scale photonic crystals. The desired photonic crystals have been achieved with hole diameters as low as 130 nm with smooth and vertical profiles by developing a suitable ICP processes. The influence of the ICP parameters on this device system are analyzed mainly by scanning electron microscopy. This fabrication approach is not limited to GaAs material, and may be efficiently applied to the development of most two-dimensional photonic crystal slabs.     

Aspect-ratio-independent anisotropic silicon etching in a plasma chemical cyclic process

The conditions of implementation of aspect-ratio-independent etching (ARIE) are given for a two-stage etching/passivation process in an SF₆/C₄F₈ plasma. It is shown experimentally that the ARIE etching is achieved by extension of the stage of passivation and/or reduction of the energy of ions at the stage of etching. These phenomena lead to prolonged removal of the fluorocarbon film, which affects the dependence of the etching rate on the aspect ratio of the groove. A model of cyclic etching is presented that takes into account the aspect dependences of the processes on the groove bottom, namely, Si etching and deposition and removal of the fluorocarbon film. The simulation results correlate satisfactorily with the experimental data. Limitations of implementation of ARIE etching are discussed.     

Thin-film transistors on plastic and glass substrates using silicon deposited by microwave plasma ECR-CVD

Thin-film transistors (TFTs) were fabricated on polyimide and glass substrates at low temperatures using microwave ECR-CVD deposited amorphous and nanocrystalline silicon as active layers. The amorphous Si TFT fabricated at 200 /spl deg/C on the polyimide foil had a saturation region field effect mobility of 4.5 cm/sup 2//V-s, a linear region mobility of 5.1 cm/sup 2//V-s, a threshold voltage of 3.7 V, a subthreshold swing of 0.69 V/decade, and an ON/OFF current ratio of 7.9 /spl times/ 10/sup 6/. This large mobility and high ON/OFF current ratio were attributed to the high-quality channel materials with less dangling bond defect states. Nanocrystalline Si TFTs fabricated on glass substrates at 400 /spl deg/C showed a saturation region mobility of 14.1 cm/sup 2//V-s, a linear region mobility of 15.3 cm/sup 2//V-s, a threshold voltage of 3.6 V, and an ON/OFF current ratio of 6.7 /spl times/ 10/sup 6/. TFT performance was mostly independent of substrate type when fabrication conditions were the same.     

A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin film

Beta phase Gallium trioxide (β-Ga₂O₃) thin film was grown by metal organic chemical vapor deposition technology. Mixture gases of SF₆ and Ar were used for dry etching of β-Ga₂O₃ thin film by inductively coupled plasma (ICP). The effect of SF₆/Ar (etching gas) ratio on etch rate and film etching damage was studied. The etching rate and surface roughness were measured using F20-UN thin film analyzer and atomic force microscopy showing that the etching rate in the range between 30 nm/min and 35 nm/min with an improved surface roughness was obtained when the reactive mixed gas of SF₆/Ar was used. The analysis of X-ray diffraction and transmission spectra further confirmed the non-destructive crystal quality. This work demonstrates that the properly proportioned mixture gases of SF₆/Ar is suitable for the dry etching of β-Ga₂O₃ thin film by ICP and can serve as a guide for future β-Ga₂O₃ device processing.     

High-reflectance dielectric mirrors deposited by plasma-enhanced chemical vapor deposition on GaAs-AlGaAs semiconductor lasers with inductively coupled plasma etched facets

High-reflectance dielectric mirrors (HRDMs) have been deposited on the etched facets of edge-emitting semiconductor ridge lasers. Dry etching using an inductively coupled plasma system formed the laser facets. The HRDMs were deposited using plasma enhanced chemical vapor deposition. Lasers with cavity lengths of 200 and 128 /spl mu/m have been tested before and after deposition of the HRDMs with a reduction in threshold of 50% and 61%, respectively. Lasing has been demonstrated in devices with cavity lengths as small as 32 /spl mu/m after the addition of the HRDMs.     

Pi型电感耦合LTCC滤波器的寄生感性耦合研究

对二阶Pi型电感耦合LTCC滤波器中各个元件的电容及电感寄生效应进行了分析,提出了一种新的寄生电感耦合分析方法,并根据分析结果设计了一个二阶Pi型电感耦合和一个二阶Pi型电容耦合LTCC带通滤波器,其中,电感耦合滤波器的设计指标为:中心频率2.45GHz,相对带宽32.65%,带内插入损耗2dB,回波损耗18 dB;电...