超级电容器高比容（RuO_2/SnO_2）·nH_2O复合薄膜电极的研究

采用电沉积工艺制备超级电容器用钽基（RuO2/SnO2）.nH2O复合薄膜,研究了初始沉积液中Sn2＋与Ru3＋浓度比以及热处理对制备（RuO2/SnO2）.nH2O复合薄膜性能的影响。借助扫描电镜、X射线衍射仪、红外光谱对薄膜的形貌和物相进行分析,用循环伏安法（CV）对该复合薄膜电容特性进行了测量。结果表明,以沉积液中Sn2＋与Ru3＋浓度比为2∶1时电沉积出的样品,在温度为300℃、热处理2.5h后所制备出的复合电极薄膜材料的比电容达到385F/g。     

超级电容器用（RuO2/SiO2）·nH2O复合薄膜电极的研究

以水合三氯化钌(RuCl3.3H2O)和正硅酸乙酯(TEOS)为原料,采用溶胶-热分解法制备了超级电容器用(RuO2/SiO2).nH2O复合薄膜电极材料。研究了热处理温度及热处理时间对电极材料电学性能的影响。借助CHI660C电化学工作站对薄膜材料的电化学性能进行了测试,采用SEM、XRD、FTIR等检测手段对复合材料的微观形貌、物相结构进行了分析。结果表明,固定水合三氯化钌和正硅酸乙酯的物质的量比为10∶3,当热处理温度和时间分别为350℃和2h时,复合薄膜电极具有优良的综合性能,比表面积为265.7m2/g,比电容最高为421F/g,充放电电流为0.1A时,内阻最高为0.72Ω。     

sol-gel法制备的SnO_2-TiO_2厚膜及其气敏特性研究

采用sol-gel法,以钛酸丁酯、四氯化锡为前驱体制备了不同掺杂量的Sn O2-Ti O2纳米粉末,样品经300,500,700和900℃退火后,利用浸渍提拉法,在Al2O3陶瓷管表面制备了Sn O2-Ti O2厚膜。通过XRD和SEM对制备的纳米粉末的物相、形貌进行表征,静态配气法对其气敏性能进行测试,并结合分子轨道理论探讨了气敏机理。实验结果表明,经700℃退火的4%(原子分数)掺杂的Sn O2-Ti O2气敏元件,对乙醇气体具有很好的选择性,在工作温度为63℃时,对乙醇气体的灵敏度可达1 903,响应-恢复时间分别为1和3 s,所制备的气敏元件有望用于乙醇气体的实用化检测。     

超声喷雾法制备SnO_2∶Sb电热薄膜结构和电学性能

以SnCl_4·5H_2O和SbCl_3为原料,无水乙醇作溶剂,溶胶-凝胶法制备SnO_2∶Sb(ATO)薄膜的前驱体溶液,再用超声喷雾热解法制得薄膜,并用包括四探针测试仪及热功率测试设备等在内的方法对样品进行表征。结果表明:超声喷雾热解法可制备表面平整的ATO薄膜;Sb元素的掺杂并未改变SnO_2的晶体结构,且随着沉积温度的增加,薄膜的结晶度提高;当沉积温度为500℃,Sb掺量为1.5at.%,c(Sn)=0.8mol/L时方块电阻最小,为105Ω/?,施加220V电压最高加热温度达到213℃。     

超级电容器高比容(RuO_2/SnO_2)·nH_2O复合薄膜电极的研究

采用电沉积工艺制备超级电容器用钽基(RuO2/SnO2)·nH2O复合薄膜,研究了初始沉积液中Sn2+与Ru3+浓度比以及热处理对制备(RuO2/SnO2)·nH2O复合薄膜性能的影响.借助扫描电镜、X射线衍射仪、红外光谱对薄膜的形貌和物相进行分析,用循环伏安法(CV)对该复合薄膜电容特性进行了测量.结果表明,以沉积液中Sn2+与Ru3+浓度比为2:1时电沉积出的样品,在温度为300℃、热处理2.5h后所制备出的复合电极薄膜材料的比电容达到385F/g.     

甩胶喷雾热分解法制备ITO薄膜及光电性能研究

按In:Sn(物质的量比)=9:1,InCl3·4H2O和SnCl4·5H2O为前驱物,采用自制甩胶喷雾热分解制备薄膜装置在普通玻璃衬底上沉积了ITO薄膜,结果表明,采用自制甩胶喷雾热分解制备薄膜新装置成功制备出ITO薄膜。该装置结构简单、操作方便。制备ITO薄膜优化条件为:甩胶转速800r/min、衬底温度250℃、退火温度450℃、载气为空气、流量为7L/min、液体雾化速度0.2ml/min、雾粒速度3.5m/s。薄膜的沉积时间为5min,薄膜厚度约1000nm,最低电阻率为0.75*10-4Ω·cm,薄膜在可见光范围(波长在400-700nm)内平均透光率为87.2%。衬底温度在200℃以上时呈现立方相结构。     

SnO_2-MWCNTs薄膜的静电增强超声雾化热解法制备及其气敏性能

对多壁碳纳米管(MWCNTs)进行氧等离子体改性,并将其超声分散于四氯化锡(SnCl4·5H2O)的盐溶液中,利用静电增强超声雾化热解法制备SnO_2-MWCNTs薄膜,研究了薄膜的气敏性能随沉积温度和MWCNTs掺杂量的变化关系。拉曼光谱分析结果表明MWCNTs中sp3杂化C含量增加,反映了MWCNTs表面接枝了含氧官能团。采用场发射扫描电镜、原子力显微镜对薄膜形貌进行表征,结果表明,随着沉积温度和MWCNTs掺杂量的增加,薄膜孔隙率、不匀率都有所增加。X射线衍射结果表明反应过程中SnCl_4·5H_2O全部转化为了四方晶系金红石结构的SnO_2,晶粒尺寸为3nm左右。气敏性能测试结果表明当沉积温度为300℃、MWCNTs掺杂量为10mg/mL,薄膜的气敏性能较好。     

雾化辅助常压化学气相沉积氧化钌薄膜结构及性能研究

以水合氯化钌和乙醇钠为原料,首先制备了乙醇钌的乙醇溶液。通过对乙醇钌的乙醇溶液进行雾化,以2∶1的氮氧比为载气,在400℃常压条件下沉积了RuO2薄膜。采用XRD和AFM分别表征了薄膜的结构及表面形貌,证实了RuO2薄膜的晶体结构,晶粒尺寸为21.4nm。通过电化学测试,RuO2薄膜的容量可达0.818F/cm2(549F/g),充放电性能良好。经1000次循环测试,剩余容量仍然可达到初始容量的92.1%,同时发现RuO2薄膜具有较低的阻抗,有利于薄膜电容器以大电流快速充放电。     

溶胶-凝胶法制备二氧化硅薄膜及其性能研究

首先通过溶胶-凝胶法,以正硅酸乙酯(Tetraethyl orthosilicate,TEOS)为前驱体,硝酸(HNO3)为催化剂,制备出二氧化硅溶胶。采用浸渍提拉法在金属表面涂覆二氧化硅胶膜,并经热处理后制备出二氧化硅薄膜。向溶胶中添加F-硅烷偶联剂对薄膜的疏水性能进行改善。采用FT-IR、SEM、TG系统分析了薄膜的化学组成、微观形貌和热稳定性,研究了不同原料比、成膜温度对薄膜硬度、附着力及耐腐蚀性能的影响。结果表明,当硅、酸物质的量比为15∶1时,二氧化硅薄膜的硬度最高,可达9H;附着力最好,最高达2级;耐盐雾腐蚀性能最好,最高盐雾时间为25 min;且通过SEM分析可知薄膜的表面裂纹最少,且无明显凝胶析出物;通过热失重的分析表明溶胶反应温度对薄膜热稳定性的影响不大。     

pH值及含水量对自蔓燃制备TiO_2光催化性能的影响

为了考察pH值及含水量对溶胶-凝胶自蔓燃法制备TiO2粉体光催化性能的影响,以TiO(NO3)2为前驱体,在原料、燃烧剂和燃烧助剂的物质的量比为n(TiCl4)∶n(C6H8O7)∶n(NH4NO3)=1∶1∶3,以及煅烧温度550℃不变的情况下,改变溶胶pH值和含水量,制备TiO2粉体,利用X射线衍射和扫描电镜进行结构表征,通过降解亚甲基蓝验证光催化性能。结果表明:该条件下制备的TiO2粉体具有松散、多孔的特性,晶型为锐钛矿。在pH值为7、含水质量分数为50%的条件下,TiO2的光催化活性最高。     

复合电沉积制备SnO2/TiO2薄膜及其光电催化性能

为了寻求廉价、高效和稳定的光催化剂,用复合电沉积技术在紫铜片上制备了Sn/TiO2薄膜,经300℃热氧化使之形成SnO2/TiO2复合电极.利用SEM,XRD对薄膜进行了表征,以甲基橙为模型化合物,对复合电极的光催化和光电催化性能进行了测定.研究表明:该薄膜由0.3~1μm的颗粒构成,每个颗粒又由纳米晶粒形成;电极具有多孔结构,膜中的SnO2以两种不同的晶体结构存在;在薄膜质量相等的情况下,SnO2/TiO2薄膜的光催化活性是纯TiO2粒子膜的2.87倍;外加一定偏压下,其催化性能大幅度提高.     

退火气氛对SnO2薄膜结构与成分的影响

研究了低氧分压反应溅射法生长的SnO2薄膜于600℃ O2气氛和Ar气氛退火处理后的表面形貌、晶体结构以及表面成分,发现经氧化性气氛退火处理的SnO2为具有金红石结构的表面多孔薄膜.相比较而言,Ar气氛退火处理后的SnO2薄膜表面较为致密,相结构包含朱氧化完全的β-Sn.XPS分析进一步表明,氧化性气氛退火形成单一组分的SnO2,而惰性气氛退火后薄膜表面含有Sn、SnO和SnO2.另外,研究还发现薄膜表面吸附氧形态与退火气氛有关.     

Effect of thickness on nanostructured SnO2 thin films by spray pyrolysis as highly sensitive H2S gas sensor

Nanostructured SnO2 thin films were prepared by spray pyrolysis technique onto glass substrates with different thickness by varying quantity of precursor solution. The structural, optical and electrical properties of these films have been studied. The crystallographic structure of the films was studied by X-ray diffraction (XRD). It is found that the films are tetragonal with (110) orientation. The grain size increases with thickness. Atomic Force Microscopy (AFM) showed that the nanocrystalline nature of the films with porous nature. The grain size increased 14 to 29 nm with increase in film thickness. The studies on the optical properties show that the direct band gap value decreases from 3.75 to 3.50 eV. The temperature dependence of the electrical conductivity was studied. The activation energies of the films are calculated from the conductance temperature characteristics. The nanostructured SnO2 thin films were used as sensing layers for resistive gas sensors. The dependence of gas sensing properties on the thickness of SnO2 thin films was investigated. The gas response of the SnO2 thin films towards the H2S gas was determined at an operating temperature of 150 degrees C. The sensitivity towards H2S gas is strongly depending on surface morphology of the SnO2 thin films.     

新型SnO2/WO3双层薄膜NO2敏感性能研究

采用射频磁控反应溅射锡(Sn)靶和钨(W)靶的方法制备了SnO2/WO3双层薄膜材料,通过XRD和XPS实验研究了双层薄膜的物相结构和组份,结果表明,SnO2/WO3双层薄膜经过热处理后形成了SnWO4化合物.在此基础之上,制作了相应的NO2气体敏感薄膜传感器,研究了双层薄膜传感器的制备工艺参数及工作条件对传感器性能的影响,研究了传感器的敏感特性,包括灵敏度、选择性、响应恢复等特性.结果表明,传感器对NO2气体有较好的敏感性,对其他干扰气体不敏感.     

离子注入改善纳米二氧化钛薄膜光催化性能

利用直流磁控反应溅射技术在玻璃衬底上制备了透明的纳米TiO2光催化薄膜。利用离子注入技术将Sn离子注入到TiO2表面以提高其光催化活性。用X射线衍射（XRD）、X射线光电子谱（XPS）以及UV－VIS分光光度计对薄膜进行结构与性能表征。Sn离子注入后的薄膜具有更高的光催化活性，这是因为在TiO2和SnO2半导体的复合体系中，电子－空穴对的分离变得更加有效，从而提高了其催化性能。     

喷雾热分解法制备SnO2透明导电薄膜

利用压缩空气气雾化器,通过喷雾热分解法,以ＳｎＣｌ２．２Ｈ２Ｏ为原料,在载玻片上成功制备了ＳｎＯ２薄膜,在１１０℃到３６５℃间的不同沉积温度下进行镀膜,考察了沉积温度,沉积时间对ＳｎＯ２薄膜制备的影响,结果表明,在３２５℃的沉积温度下,薄膜已晶化,随着温度升高,喷雾时间增加,方块电阻降低３２５℃下的样品在可见光区透射率达８０％以上,近红外区透射率达９０％以上。     

Effect of vacuum annealing on the phase composition of In/SnO/Si, In/SnO2/Si, and Sn/In2O3/Si heterostructures

The chemical interaction between indium and thin SnO and SnO₂ films and between tin and thin In₂O₃ films during vacuum annealing was studied. The metallic films were deposited onto single-crystal silicon substrates by magnetron sputtering, the SnO and SnO₂ films were produced by heat-treating the Sn film in flowing oxygen at 673 and 873 K, respectively, and the In₂O₃ film was produced by heat-treating the In film at 573 K. The results indicate that annealing of the In/SnO/Si and In/SnO₂/Si heterostructures in vacuum (residual pressure of 0.33 × 10^?2 Pa) at 773 K gives rise to the reduction of Sn and oxidation of In, whereas annealing of Sn/In₂O₃/Si causes partial tin substitution for indium in the cubic indium oxide lattice.     

Preparation of Cu2ZnSnS4 thin films by sulfurization of stacked metallic layers

Stacked precursors of Cu, Sn, and Zn were fabricated on glass/Mo substrates by electron beam evaporation. Six kinds of precursors with different stacking sequences were prepared by sequential evaporation of Cu, Sn, and Zn with substrate heating. The precursors were sulfurized at temperatures of 560 °C for 2 h in an atmosphere of N₂ + sulfur vapor to fabricate Cu₂ZnSnS₄ (CZTS) thin films for solar cells. The sulfurized films exhibited X-ray diffraction peaks attributable to CZTS. Solar cells using CZTS thin films prepared from six kinds of precursors were fabricated. As a result, the solar cell using a CZTS thin film produced by sulfurization of the Mo/Zn/Cu/Sn precursor exhibited an open-circuit voltage of 478 mV, a short-circuit current of 9.78 mA/cm², a fill factor of 0.38, and a conversion efficiency of 1.79%.     

遮阳可控性低辐射玻璃的制备及性能

本研究通过常压CVD法在玻璃基板上分别镀制单层SnO2∶Sb(ATO)薄膜和SnO_2∶F(FTO)/ATO复合薄膜,研究单层ATO薄膜和复合薄膜对玻璃光电性能的影响。结果表明:单层ATO薄膜和复合薄膜均为四方金红石型多晶SnO_2薄膜,且结晶性能良好,结晶度高。单层ATO薄膜可明显降低玻璃的透过率,改善玻璃的导电性和遮阳性。复合薄膜相对于单层ATO薄膜,导电性、遮阳性和辐射性能均有较大的提升,薄膜电阻率、遮阳系数和辐射率随着复合薄膜膜厚的增加而逐渐降低,薄膜晶粒增大。当复合薄膜厚度为821nm时,薄膜电阻率为4.9×10~(-4)Ω·cm,遮阳系数和辐射率分别为0.50和0.06,远红外反射率达到93.9%。     

Growth and characterization of tin oxide thin films and fabrication of transparent p-SnO/n-ZnO p–n hetero junction

p-Type and n-type tin oxide thin films were deposited by rf-magnetron sputtering of metal tin target by varying the oxygen pressure. Chemical composition of SnO thin film according to the intensity of the XPS peak is about 48.85% and 51.15% for tin and oxygen respectively. Nearest neighbor distance of the atoms calculated from SAED patterns is 2.9 Åand 2.7 Åfor SnO and SnO₂ respectively. The Raman scattering spectrum obtained from SnO thin films showed two peaks, one at 113 cm⁻¹ and the other at 211 cm⁻¹. Band gap of as-deposited SnO_x thin films vary from 1.6 eV to 3.2 eV on varying the oxygen partial pressure from 3% to 30% which indicates the oxidization of metallic phase Sn to SnO and SnO₂. p-Type conductivity of SnO thin films and n-type conductivity of SnO₂ thin films were confirmed through Hall coefficient measurement. Transparent p–n hetero junction fabricated in the structure glass/ITO/n-ZnO/p-SnO shows rectification with forward to reverse current ratio as 12 at 4.5 V.