共查询到20条相似文献,搜索用时 15 毫秒
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Thrivikraman T.K. Jiahui Yuan Bardin J.C. Mani H. Phillips S.D. Kuo W.-M.L. Cressler J.D. Weinreb S. 《Microwave and Wireless Components Letters, IEEE》2008,18(7):476-478
We report results on the cryogenic operation of two different monolithic X-band silicon-germanium (SiGe) heterojunction bipolar transistor low noise amplifiers (LNAs) implemented in a commercially-available 130 nm SiGe BiCMOS platform. These SiGe LNAs exhibit a dramatic reduction in noise temperature with cooling, yielding of less than 21 K (0.3 dB noise figure) across X-band at a 15 K operating temperature. To the authors' knowledge, these SiGe LNAs exhibit the lowest broadband noise of any Si-based LNA reported to date. 相似文献
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Chen A. Y.-K. Baeyens Y. Chen Y.-K. Lin J. 《Microwave and Wireless Components Letters, IEEE》2010,20(2):103-105
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《Microwave and Wireless Components Letters, IEEE》2006,16(9):520-522
A low-power,$X$ -band low-noise amplifier (LNA) is presented. Implemented with 180 GHz silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs), the circuit occupies 780$times hbox660 muhboxm^2$ . The LNA exhibits a gain of 11.0 dB at 9.5 GHz, a mean noise figure of 2.78 dB across$X$ -band, and an input third-order intercept point of$-$ 9.1 dBm near 9.5 GHz, while dissipating only 2.5 mW. The low-power performance of this LNA, together with its natural total-dose radiation immunity, demonstrates the potential of SiGe HBT technology for near-space radar applications. 相似文献
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《Microwave Theory and Techniques》1983,31(12):996-1001
Cryogenic receiver modules for 90 and 140 GHz have been developed that are part of an airborne imaging system. They consist of Schottky-barrier mixers followed by GaAs-FET IF amplifiers. The DSB receiver noise temperatures are 210 K for the 90-GW and 250 K for the 140-GHz system. The instantaneous bandwidth is 2.5 GHz for both front ends. Results of some flight tests are presented. 相似文献
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D. J. Meyer D. A. Webb M. G. Ward J. D. Sellar P. Y. Zeng J. Robinson 《Materials Science in Semiconductor Processing》2001,4(6)
The continued growth of high-speed-digital data transmission and wireless communications technology has motivated increased integration levels for ICs serving these markets. Further, the increasing use of portable wireless communications tools requiring long battery lifetimes necessitates low power consumption by the semiconductor devices within these tools. The SiGe and SiGe:C materials systems provide solutions to both of these market needs in that they are fully monolithically integratible with Si BiCMOS technology. Also, the use of SiGe or SiGe:C HBTs for the high-frequency bipolar elements in the BiCMOS circuits results in greatly decreased power consumption when compared to Si BJT devices.Either a DFT (graded Ge content across the base) or a true HBT (constant Ge content across the base) bipolar transistor can be fabricated using SiGe or SiGe:C. Historically, the graded profile has been favored in the industry since the average Ge content in the pseudomorphic base is less than that of a true HBT and, therefore, the DFT is tolerant of higher thermal budget processing after deposition of the base. The inclusion of small amounts of C (e.g. <0.5%) in SiGe is effective in suppressing the diffusion of B such that very narrow extremely heavily doped base regions can be built. Thus the fT and fmax of a SiGe:C HBT/DFT are capable of being much higher than that of a SiGe HBT/DFT.The growth of the base region can be accomplished by either nonselective mixed deposition or by selective epitaxy. The nonselective process has the advantage of reduced complexity, higher deposition rate and, therefore, higher productivity than the selective epitaxy process. The selective epi process, however, requires fewer changes to an existing fabrication sequence in order to accommodate SiGe or SiGe:C HBT/DFT devices into the BiCMOS circuit. 相似文献
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The characteristics of parameters such as carrier temperature and diffusion coefficient in ultra-thin-base SiGe heterojunction bipolar transistors (HBTs) are analysed according to the solution of the Boltzmann equation; a new model of base transport in SiGe HBTs, different from traditional ones is described. 相似文献
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SiGe HBT器件的研究设计 总被引:1,自引:0,他引:1
研制了一种平面集成多晶发射极SiGe HBT,并对SiGe HBT设计进行了研究分析。给出了双极晶体管的结构和关键工艺参数,并进行了流片测试,结果表明,在室温下电流增益β大于1500,最大达到3000,Vceo为5V,厄利电压VA大于10V,βVA乘积达到15000以上。这种器件对多晶Si发射极As杂质浓度分布十分敏感。 相似文献
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毫米波雷达作为一种重要的车载传感器,在自动驾驶领域得到了广泛地应用。近年来随着汽车智能化程度的提高,高质量雷达点云的生成受到了人们的极大关注。传统毫米波雷达点云成像由于存在杂波点太多、有效点云稀疏等缺点而限制了其在自动驾驶领域的发展。因此,如何提高毫米波雷达点云密度和质量成为了业界研究的重点问题。近年来,随着多输入多输出(MIMO)技术以及控制多片级联同步技术的成熟,使得毫米波雷达天线的角度分辨率得到了极大提升,推动了毫米波雷达在点云成像上的发展。在此基础上,本文设计了一套完整的毫米波雷达系统级点云成像算法,并使用TI公司的AWR2243级联雷达开发套件对实际场景进行数据采集,生成了较为致密可信的毫米波雷达三维点云图像,基本实现了对车载平台侧面场景的有效还原。 相似文献
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对现代的双极型晶体管而言,载流子在基极和集电极的空间电荷区(CB SCR)传输延迟可比基极渡越时间,甚至要大于后者。为了更精确地表征了SiGe HBT的射频噪声性能,对van Vliet模型做了扩展,使其包含基极集电极空间电荷区的延迟效应。用2个与噪声相关的延迟时间对transport模型进行了扩展,使得在没有非准静态Y参数的情况下仍然可以对基极和集电极电流噪声进行精确建模。最后,在JC=12.2 mA/μm2,AE=0.12×18μm2条件下,分别对2种模型的基极和集电极噪声电流谱及其归一化相关系数做图并与计算得出的解析值相比较,验证了模型的有效性。 相似文献
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Comeau J. P. Najafizadeh L. Andrews J. M. Prakash A. P. G. Cressler J. D. 《Microwave and Wireless Components Letters, IEEE》2007,17(5):349-351
This work presents a case study of circuit-to-circuit substrate coupling between a 24-GHz power amplifier (PA) and a 23-GHz voltage-controlled oscillator (VCO) implemented in a commercially-available SiGe heterojunction bipolar transistor BiCMOS technology. The concurrent operation of these two circuits on the same silicon die results in -33dB of coupling between the PA's output and the VCO's output. Different testing configurations are considered to verify the dominant path of the coupling. These results highlight the potential challenges for silicon-based monolithic systems targeting microwave operational frequencies 相似文献
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本文阐述了雷达接收机模块化的必要性及可行性;提出了模块化雷达接收机的实施方案;论述了微电子技术在实现雷达接收机模块化中所起的重要作用,并对微电子技术在模块化雷达接收机中的应用前景提出了一些看法。在比较了国内外模拟集成电路及MMIC、HMIC器件之后,对模块化雷达接收机所用器件的国产化提出了一些希望。最后,介绍了我所微电子化接收机系列的研制情况。 相似文献
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采用0.18μm SiGe BiCMOS工艺设计实现了一款用于3GPP WCDMA 850/2100(band-I/band-V)的双频单芯片功率放大器(PA)。PA采用单端共射级3级级联的结构,具有带模拟开关的片上偏置电路,通过控制偏置电流对两个PA工作状态进行切换。制造的芯片面积为1.82 mm×2.83 mm,片上集成了开关电路、偏置电路和输入匹配、级间匹配电路。在3.3 V电源电压下测试结果表明,对于band-V(CLR)频段,PA的线性输出功率P1 dB为28.6 dBm,5 dBm输入时,功率附加效率PAE,为34%。对于band-I(IMT)频段,PA的P1 dB为26.3 dBm,PAE为31%。 相似文献
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