共查询到17条相似文献,搜索用时 140 毫秒
1.
高能氧化锌压敏元件研究 总被引:3,自引:3,他引:0
为了提高ZnO压敏元件的通流能力,采用化学共沉淀法制得含七种组分的复合添加剂。用此复合添加剂、ZnO、SiO2及Al(NO3)3的混合溶液,经球磨后,制成φ10mm×1mm氧化锌压敏元件。通过TEM和粒度测试,分析了复合添加剂的尺寸和晶粒的均匀性,并对元件的微区成分和性能进行了测试。结果表明:采用化学共沉淀法制备的复合添加剂粉体粒径小,在元件中的分布较传统方法均匀;用该添加剂制备的氧化锌压敏元件的2ms方波通流能力超过705J/cm3,是传统方法的两倍多。 相似文献
2.
3.
4.
5.
6.
7.
ZnO压敏电阻器对所用银浆附着力要求较高,通过对ZnO压敏电阻器用银浆料中玻璃粉的研究,提出了用复合玻璃粉制备ZnO压敏电阻器用银浆料。浆料经不同温度烧成后,测得了烧成膜与基体附着力的数据,复合玻璃粉S2:S5的最佳质量比为1:2.5,复合玻璃粉添加量(质量分数)为3.5%时,可显著提高浆料对基体的附着力。结果表明:可采用适合于480~580℃烧成温度的复合玻璃粉来提高烧成膜的致密性及对基体的附着力。并对其机理进行了探讨。 相似文献
8.
通过掺杂微量Nb2O5制备了ZnO压敏电阻器,运用扫描电子显微镜(SEM)和电性能测试手段分析了Nb2O5掺杂对ZnO压敏电阻器微观结构和电性能的影响,测量了晶界势垒高度φH,并探讨了其对ZnO压敏电阻器性能的影响。结果表明:掺杂适量的Nb2O5可以明显改善ZnO压敏电阻器的微观结构和电性能;当Nb2O5的掺杂量为摩尔分数0.10%时,所制ZnO压敏电阻器的晶粒尺寸最大,且压敏电压V1mA、非线性系数α和φH值分别为174V,30和0.463 eV。 相似文献
9.
10.
11.
FU Jing XU Zheng 《中国电子科技》2003,1(1)
This paper reviews the history of ZnO varistor,discribes its properties and recenttechnological status and forecasts its evolution.The future development trend is to produce the low-voltage high-energy multi-layer ZnO varistors.After the two additives are classified by their functions,the effect mechanism of Bi_2O_3 and TiO_2 additives are researched theoretically.TiO_2 will make ZnO graingrow bigger and V_ImA/mm be depressed down.Especially the colloid TiO_2 additive in the scale ofnanometer brings about a new method to realize the low voltage of ZnO varistor,which resolves theproblem of how to disturb nanometer powder evenly.Moreover the sintering temperature has prominenteffect on the electrical properties of ZnO varistors.Generally,the appropriate sintering temperature forlow-voltage ZnO varistor ceramics should not be more than 1 250℃.These provide an effective methodand rationale for studying low-voltage ZnO varistors. 相似文献
12.
This paper reviews the history of ZnO varistor, discribes its properties and recent technological status and forecasts its evolution. The future development trend is to produce the low-voltage high-energy multi-layer ZnO varistors. After the two additives are classified by their functions, the effect mechanism of Bi2O3 and TiO2 additives are researched theoretically. TiO2 will make ZnO grain grow bigger and V1mA/mm be depressed down. Especially the colloid TiO2 additive in the scale of nanometer brings about a new method to realize the low voltage of ZnO varistor, which resolves the problem of how to disturb nanometer powder evenly. Moreover the sintering temperature has prominent effect on the electrical properties of ZnO varistors. Generally, the appropriate sintering temperature for low-voltage ZnO varistor ceramics should not be more than 1 250℃. These provide an effective method and rationale for studying low-voltage ZnO varistors. 相似文献
13.
14.
Yuanhua Lin Zhongtai Zhang Zilong Tang Fangli Yuan Jinlin Li 《Advanced functional materials》1999,9(5):205-209
Nanometre precursor powders of ZnO and various additives are synthesised by a new technology, namely chemical coprecipitation and plasma pyrolysis. Transmission electron microscopy (TEM) and the Brunauer–Emmett–Teller (BET) method are employed to illustrate the precursor powders' properties. The ZnO and additive composite powders are composed of spherical particles whose size is about 10–50 nm. Varistors are prepared by sintering the precursor powders at 1050 °C. Scanning electron microscopy (SEM) results show that the average grain size of the varistors is about 1.0 μm. The prepared ZnO-based varistors have excellent electronic properties. Analytical results reveal that the breakdown voltage is 500.0 V mm−1 and the non-linear coefficient is about 54.0. Copyright © 2000 John Wiley & Sons, Ltd. 相似文献
15.
采用固相法对Bi2O3和Sb2O3进行了预复合,并研究了不同比例的Bi2O3与Sb2O3预复合对ZnO压敏电阻致密度,晶粒结构和电学性能的影响。结果表明:当Bi2O3与Sb2O3的摩尔比为0.7:1.0时,ZnO压敏电阻的综合性能最优,其晶粒生长得最为均匀致密,电位梯度达到361V/mm,非线性系数为86,漏电流密度为7×10–8A/cm2;另外,在耐受5kA电流下的8/20μs脉冲电流波后,其残压比和压敏电压变化率分别为2.6和2.5%。 相似文献
16.
纳米ZnO掺杂对压敏阀片电性能和组织的影响 总被引:5,自引:2,他引:3
研究了纳米级ZnO粉料对压敏阀片的压敏电压、漏电流和压比的影响,并对其微观结构进行了分析研究,从理论上探讨了纳米ZnO影响压敏阀片电性能与微观结构的机理。研究结果表明,氧化锌压敏阀片中加入纳米ZnO后,其压敏电压显著提高。在质量分数为0~30%的范围内,随着纳米ZnO含量的增加,压敏阀片的压敏电压明显提高,其压比也呈升高趋势。当纳米ZnO含量为30%时,压敏电压约达547.54 V/mm,压比为1.149。在0~10%的范围内,随着纳米ZnO含量的增加,压敏阀片的漏电流呈下降趋势,而在10%~30%的时,漏电流又随纳米ZnO的含量的增加而升高。当纳米ZnO的含量为10%时,漏电流最小,为0.6 mA。 相似文献