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1.
This study investigates the effect of the molecular structure of three different donor units, naphthalene (Np), bithiophene (BT), and thiophene–vinylene–thiophene (TVT), in isoindigo (IIG)‐based donor –acceptor conjugated polymers (PIIG‐Np, PIIG‐BT and PIIG‐TVT) on the charge carrier mobility of organic field‐effect transistors (OFETs). The charge transport properties of three different IIG‐based polymers strongly depend on donor units. PIIG–BT OFETs showed 50 times higher hole mobility (0.63 cm2 V?1 s?1) than PIIG–TVT and PIIG–Np ones of ≈ 0.01 cm2 V?1 s?1 with CYTOP dielectric though the BT units have less planarity than the TVT and Np units. The reasons for the different mobility in IIG‐based polymers are studied by analyzing the energy structure by absorption spectra, calculating transport levels by density functional theory, investigating the in‐ and out‐of‐plane crystallinity of thin film by grazing‐incidence wide‐angle X‐ray scattering, and extracting key transport parameters via low‐temperature measurements. By combining theoretical, optical, electrical, and structural analyses, this study finds that the large difference in OFET mobility mainly originates from the transport disorders determined by the different microcrystal structure, rather than the intrinsic transport properties in isolated chains for different polymers.  相似文献   

2.
Interdependence of chemical structure, thin‐film morphology, and transport properties is a key, yet often elusive aspect characterizing the design and development of high‐mobility, solution‐processed polymers for large‐area and flexible electronics applications. There is a specific need to achieve >1 cm2 V?1 s?1 field‐effect mobilities (μ) at low processing temperatures in combination with environmental stability, especially in the case of electron‐transporting polymers, which are still lagging behind hole transporting materials. Here, the synthesis of a naphthalene‐diimide based donor–acceptor copolymer characterized by a selenophene vinylene selenophene donor moiety is reported. Optimized field‐effect transistors show maximum μ of 2.4 cm2 V?1 s?1 and promising ambient stability. A very marked film structural evolution is revealed with increasing annealing temperature, with evidence of a remarkable 3D crystallinity above 180 °C. Conversely, transport properties are found to be substantially optimized at 150 °C, with limited gain at higher temperature. This discrepancy is rationalized by the presence of a surface‐segregated prevalently edge‐on packed polymer phase, dominating the device accumulated channel. This study therefore serves the purpose of presenting a promising, high‐electron‐mobility copolymer that is processable at relatively low temperatures, and of clearly highlighting the necessity of specifically investigating channel morphology in assessing the structure–property nexus in semiconducting polymer thin films.  相似文献   

3.
Recently, polymer field‐effect transistors have gone through rapid development. Nevertheless, charge transport mechanism and structure‐property relationship are less understood. Here we use strong electron‐deficient benzodifurandione‐based poly(p‐phenylene vinylene) ( BDPPV ) as polymer backbone and develop six BDPPV ‐based polymers ( BDPPV‐C1 to C6 ) with various side‐chain branching positions to systematically study the side‐chain effect on device performance. All the polymers exhibited ambient‐stable n‐type transporting behaviors with the highest electron mobility of up to 1.40 cm2 V?1 s?1. The film morphologies and microstructures of all the six polymers were systematically investigated. Our results demonstrate that the interchain π–π stacking distance decreases as moving the branching position away from polymer backbones, and an unprecedentedly close π–π stacking distance down to 3.38 Å is obtained for BDPPV‐C4 to C6 . Nonetheless, closer π–π stacking distance does not always correlate with higher electron mobility. Polymer crystallinity, thin film disorder, and polymer packing conformation, which all influenced by side‐chain branching position, are proved to show significant influence on device performance. Our study not only reveals that π–π stacking distance is not the decisive factor on carrier mobility in conjugated polymers but also demonstrates that side‐chain branching position engineering is a powerful strategy to modulate and balance these factors in conjugated polymers.  相似文献   

4.
π‐conjugated polymers based on the electron‐neutral alkoxy‐functionalized thienyl‐vinylene (TVTOEt) building‐block co‐polymerized, with either BDT (benzodithiophene) or T2 (dithiophene) donor blocks, or NDI (naphthalenediimide) as an acceptor block, are synthesized and characterized. The effect of BDT and NDI substituents (alkyl vs alkoxy or linear vs branched) on the polymer performance in organic thin film transistors (OTFTs) and all‐polymer organic photovoltaic (OPV) cells is reported. Co‐monomer selection and backbone functionalization substantially modifies the polymer MO energies, thin film morphology, and charge transport properties, as indicated by electrochemistry, optical spectroscopy, X‐ray diffraction, AFM, DFT calculations, and TFT response. When polymer P7 is used as an OPV acceptor with PTB7 as a donor, the corresponding blend yields TFTs with ambipolar mobilities of μe = 5.1 × 10?3 cm2 V–1 s–1 and μh = 3.9 × 10?3 cm2 V–1 s–1 in ambient, among the highest mobilities reported to date for all‐polymer bulk heterojunction TFTs, and all‐polymer solar cells with a power conversion efficiency (PCE) of 1.70%, the highest reported PCE to date for an NDI‐polymer acceptor system. The stable transport characteristics in ambient and promising solar cell performance make NDI‐type materials promising acceptors for all‐polymer solar cell applications.  相似文献   

5.
Unipolar n‐type semiconducting polymers based on the benzobisthiadiazole (BBT) unit and its heteroatom‐substituted derivatives are for the first time synthesized by the D‐A1‐D‐A2 polymer‐backbone design strategy. Selenium (Se) substitution is a very effective molecular design, but it has been seldom studied in n‐type polymers. In this study, within the similar conjugated framework, the Se substitution effects on the optical, electrochemical, solid‐state polymer packing, electron mobility, and air‐stability of the target unipolar n‐type polymers are unraveled. Replacing the sulfur (S) atom in the thiadiazole heterocycles with the Se atom leads to narrower bandgaps and deeper lowest unoccupied molecular orbital (LUMO) levels of the n‐type polymers. Furthermore, the Se‐substituted polymer (pSeN‐NDI) shows shorter lamellar packing distances and stronger edge‐on π–π stacking interactions than its S‐counterpart (pSN‐NDI), as observed by the two‐dimensional grazing‐incidence wide‐angle X‐ray scattering (GIWAXS) patterns. With the deeper LUMO level and thin‐film microstructures suitable for transistors, pSeN‐NDI exhibits four‐fold higher electron mobilities (μe) than pSN‐NDI. However, the other Se‐containing polymer, pSeS‐NDI, forms rather amorphous film structures, which is caused by its limited thermal stability and decomposition during the thermal annealing processes, thus giving rise to a lower μe than its S‐counterpart (pBBT‐NDI). Most importantly, pBBT‐NDI demonstrates an electron mobility of 0.039 cm2 V?1 s?1, which is noticeable among the unipolar n‐type polymers based on the BBT and its analogs.  相似文献   

6.
The promise of wearable and implantable devices has made stretchable organic semiconductors highly desirable. Though there are increasing attempts to design intrinsically stretchable conjugated polymers, their performance in terms of charge carrier mobility and maximum fracture strain is still lacking behind extrinsic approaches (i.e., buckling, Kirigami interconnects). Here, polymer crosslinking with flexible oligomers is applied as a strategy to reduce the tensile modulus and improve fracture strain, as well as fatigue resistance for a high mobility diketopyrrolopyrrole polymer. These polymers are crosslinked with siloxane oligomers to give stretchable films stable up to a strain ε = 150% and 500 strain‐and‐release cycles of 100% strain without the formation of nanocracks. Organic field‐effect transistors are prepared to assess the electrical properties of the crosslinked film under cyclic strain loading. An initial average mobility (μavg) of 0.66 cm2 V?1 s?1 is measured at 0% strain. A steady μavg above 0.40 cm2 V?1 s?1 is obtained in the direction perpendicular to the strain direction after 500 strain‐and‐release cycles of 20% strain. The μavg in the direction parallel to strain, however, is compromised due to the formation of wrinkles.  相似文献   

7.
Herein, this study investigates the impact of branching‐point‐extended alkyl chains on the charge transport properties of three ultrahigh n‐type mobility conjugated polymers. Using grazing incidence wide‐angle X‐ray scattering, analysis of the crystallinity of the series shows that while π–π interactions are increased for all three polymers as expected, the impact of the side‐chain engineering on polymer backbone crystallinity is unique to each polymer and correlates to the observed changes in charge transport. With the three polymers exhibiting n‐type mobilities between 0.63 and 1.04 cm2 V?1 s?1, these results ratify that the indolonaphthyridine building block has an unprecedented intrinsic ability to furnish high‐performance n‐type organic semiconductors.  相似文献   

8.
New classes of liquid‐crystalline semiconductor polymers based on perylene diester benzimidazole and perylene diester imide mesogens are reported. Two highly soluble side‐chain polymers, poly(perylene diester benzimidazole acrylate) (PPDB) and poly(perylene diester imide acrylate) (PPDI) are synthesized by nitroxide‐mediated radical polymerization (NMRP). PPDB shows n‐type semiconductor performance with electron mobilities of 3.2 × 10?4 cm2 V?1 s?1 obtained in a diode configuration by fitting the space‐charge‐limited currents (SCLC) according to the Mott–Gurney equation. Interestingly, PPDI performs preferentially as a p‐type material with a hole mobility of 1.5 × 10?4 cm2 V?1 s?1, which is attributed to the less electron‐deficient perylene core of PPDI compared to PPDB. Optical properties are investigated by UV‐vis and fluorescence spectroscopy. The extended π‐conjugation system due to the benzimidazole unit of PPDB leads to a considerably broader absorption in the visible region compared to PPDI. HOMO and LUMO levels of the polymers are also determined by cyclic voltammetry; the resulting energy band‐gaps are 1.86 eV for PPDB and 2.16 eV for PPDI. Thermal behavior and liquid crystallinity are studied by differential scanning calorimetry, polarized optical microscopy, and X‐ray diffraction measurements. The results indicate liquid‐crystalline order of the polymers over a broad temperature range. These thermal, electrical, and optical properties make the perylene side‐chain polymers attractive materials for organic photovoltaics.  相似文献   

9.
Systematic creation of polymeric semiconductors from novel building blocks is critical for improving charge transport properties in organic field‐effect transistors (OFETs). A series of ultralow‐bandgap polymers containing thienoisoindigo (TIIG) as a thiophene analogue of isoindigo (IIG) is synthesized. The UV‐Vis absorptions of the TIIG‐based polymers ( PTIIG‐T , PTIIG‐Se , and PTIIG‐DT ) exhibit broad bands covering the visible to near‐infrared range of up to 1600 nm. All the polymers exhibit unipolar p‐channel operations with regard to gold contacts. PTIIG‐DT with centrosymmetric donor exhibits a maximum mobility of 0.20 cm2 V?1 s?1 under gold contacts, which is higher than those of the other polymers containing axisymmetric donors. Intriguingly, OFETs fabricated with aluminum electrodes show ambipolar charge transport with hole and electron mobilities of up to 0.28 ( PTIIG‐DT ) and 0.03 ( PTIIG‐T ) cm2 V?1 s?1, respectively. This is a record value for the hitherto reported TIIG‐based OFETs. The finding demonstrates that TIIG‐based polymers can potentially function as either unipolar or ambipolar semiconductors without reliance on the degree of electron affinity of the co‐monomers.  相似文献   

10.
Conjugated polymer semiconductors P1 and P2 with bithienopyrroledione (bi‐TPD) as acceptor unit are synthesized. Their transistor and photovoltaic performances are investigated. Both polymers display high and balanced ambipolar transport behaviors in thin‐film transistors. P1‐ based devices show an electron mobility of 1.02 cm2 V?1 s?1 and a hole mobility of 0.33 cm2 V?1 s?1, one of the highest performance reported for ambipolar polymer transistors. The electron and hole mobilities of P2 transistors are 0.36 and 0.16 cm2 V?1 s?1, respectively. The solar cells with PC71BM as the electron acceptor and P1/P2 as the donor exhibit a high V oc about 1.0 V, and a power conversion efficiency of 6.46% is observed for P1‐ based devices without any additives and/or post treatment. The high performance of P1 and P2 is attributed to their crystalline films and short π–π stacking distance (<3.5 Å). These results demonstrate (1) bi‐TPD is an excellent versatile electron‐deficient unit for polymer semiconductors and (2) bi‐TPD‐based polymer semiconductors have potential applications in organic transistors and organic solar cells.  相似文献   

11.
Alternating conjugated polymers of ethylenedioxythiophene and fluorene are prepared using three different synthetic methods to investigate the effects of these synthetic methods on the purity, field‐effect transistor (FET) performance, and organic photovoltaic (OPV) performance of the polymer. In this study, microwave‐assisted direct arylation polycondensation is used to obtain a high‐purity, high‐molecular‐weight (147 kDa) polymer. This pure polymer exhibits a high FET hole mobility of 1.2 × 10?3 cm2 V?1 s?1 and high OPV performance with a power conversion efficiency of 4%, even though the polymer forms an amorphous film, which absorbs in a limited region of the spectrum.  相似文献   

12.
A series of naphthalene diimide‐based conjugated polymers are prepared with various molar percentage of low molecular weight polystyrene (PS) oligomer of narrow polydispersity as the side chain. The PS side chains are incorporated through preparation of a macromonomer by chain termination of living anionic polymerization. The effects of the PS side chains amount (0–20 mol%) versus overall sidechain on the electrical properties of the resulting polymers as n‐type polymer semiconductors in field‐effect transistors are investigated. We observe that all the studied polymers show similarly high electron mobility (≈0.2 cm2 V?1 s?1). Importantly, the polymers with high PS side chain content (20 mol%) show a significantly improved device stability under ambient conditions, when compared to the polymers at lower PS content (0–10 mol%). By comparing this observation to the physical blending of the conjugated polymer with PS, we attribute the improved stability to the covalently attached PS side chains potentially serving as a molecular encapsulating layer around the conjugated polymer backbone, rendering it less susceptible to electron traps such as oxygen and water molecules.  相似文献   

13.
Based on the integrated consideration and engineering of both conjugated backbones and flexible side chains, solution‐processable polymeric semiconductors consisting of a diketopyrrolopyrrole (DPP) backbone and a finely modulated branching side chain (ε‐branched chain) are reported. The subtle change in the branching point from the backbone alters the π?π stacking and the lamellar distances between polymer backbones, which has a significant influence on the charge‐transport properties and in turn the performances of field‐effect transistors (FETs). In addition to their excellent electron mobilities (up to 2.25 cm2 V?1 s?1), ultra‐high hole mobilities (up to 12.25 cm2 V?1 s?1) with an on/off ratio (Ion/Ioff) of at least 106 are achieved in the FETs fabricated using the polymers. The developed polymers exhibit extraordinarily high electrical performance with both hole and electron mobilities superior to that of unipolar amorphous silicon.  相似文献   

14.
High‐performance unipolar n‐type conjugated polymers (CPs) are critical for the development of organic electronics. In the current paper, four “weak donor–strong acceptor” n‐type CPs based on pyridine flanked diketopyrrolopyrrole (PyDPP), namely PPyDPP1‐4FBT, PPyDPP2‐4FBT, PPyDPP1‐4FTVT, and PPyDPP2‐4FTVT, are synthesized via direct arylation polycondensation by using 3,3′,4,4′‐tetrafluoro‐2,2′‐bithiophene (4FBT) or (E)‐1,2‐bis(3,4‐difluorothien‐2‐yl)ethene (4FTVT) as weak donor unit. All four polymers exhibit low‐lying highest occupied molecular orbital (≈ ?5.90 eV) and lowest unoccupied molecular orbital energy levels (≈ ?3.70 eV). Top‐gate/bottom‐contact organic field‐effect transistors based on all four polymers display unipolar n‐channel characteristics with electron mobility (µe) above 1 cm2 V?1 s?1 in air, and presented linear |ISD|1/2 ?VGS plots and weak dependence of the extracted moblity on gate voltage (VGS), indicative of the reliability of the extracted mobility values. Importantly, the devices based on PPyDPP1‐4FBT and PPyDPP2‐4FBT show a pure unipolar n‐channel transistor behavior as revealed by the typical unipolar n‐channel output characteristics and clear off‐regimes in transfer characteristics. Attributed to its high crystallinity and favorable thin film morphology, PPyDPP2‐4FBT shows the highest µe of 2.45 cm2 V?1 s?1, which is among the highest for unipolar n‐type CPs reported to date. This is also the first report for DPP based pure n‐type CPs with µe greater than 1 cm2 V?1 s?1.  相似文献   

15.
Alkyl chains are basic units in the design of organic semiconductors for purposes of enhancing solubility, tuning electronic energy levels, and tailoring molecular packing. This work demonstrates that the carrier mobilities of indeno[1,2‐b ]fluorene‐6,12‐dione ( IFD )‐based semiconductors can be dramatically enhanced by the incorporation of sulfur‐ or nitrogen‐linked side chains. Three IFD derivatives possessing butyl, butylthio, and dibutylamino substituents are synthesized, and their organic field‐effect transistors (OFET) are fabricated and characterized. The IFD possessing butyl substituents exhibits a very poor charge transport property with mobility lower than 10?7 cm2 V?1 s?1. In contrast, the hole mobility is dramatically increased to 1.03 cm2 V?1 s?1 by replacing the butyl units with dibutylamino groups ( DBA‐IFD ), while the butylthio‐modified IFD ( BT‐IFD ) derivative exhibits a high and balanced ambipolar charge transport property with the maximum hole and electron mobilities up to 0.71 and 0.65 cm2 V?1 s?1, respectively. Moreover, the complementary metal–oxide–semiconductor‐like inverters incorporated with the ambipolar OFETs shows sharp inversions with a maximum gain value up to 173. This work reveals that modification of the aromatic core with heteroatom‐linked side chains, such as alkylthio or dialkylamino, can be an efficient strategy for the design of high‐performance organic semiconductors.  相似文献   

16.
Organic crystals that combine high charge‐carrier mobility and excellent light‐emission characteristics are expected to be of interest for light‐emitting transistors and diodes, and may offer renewed hope for electrically pumped laser action. High‐luminescence‐efficiency cyano‐substituted oligo(p‐ phenylene vinylene) (CN‐DPDSB) crystals (η ≈ 95%) grown by the physical vapor transport method is reported here, with high mobilities (at ≈10?2 cm2 V?1 s?1 order of magnitude) as measured by time‐of‐flight. The CN‐DPDSB crystals have well‐balanced bipolar carrier‐transport characteristics (μhole≈ 2.5–5.5 × 10?2 cm2 V?1 s?1; μelectron ≈ 0.9–1.3 × 10?2 cm2 V?1 s?1) and excellent optically pumped laser properties. The threshold for amplified spontaneous emission (ASE) is about 4.6 μJ per pulse (23 KW cm?2), while the gain coefficient at the peak wavelength of ASE and the loss coefficient caused by scattering are ≈35 and ≈1.7 cm?1, respectively. This indicates that CN‐DPDSB crystals are promising candidates for organic laser diodes.  相似文献   

17.
“Regioselectivity deposition” method is developed to pattern silver electrodes facilely and efficiently by solution‐process with high resolution (down to 2 μm) on different substrates in A4 paper size. With the help of this method, large‐area, flexible, high‐performance polymer field‐effect transistors based on the silver electrodes and polyimide insulator are fabricated with bottom‐contact configuration by all‐solution processes. The polymer devices exhibit high performance with average field‐effect mobility over 1.0 cm2 V?1 s?1 (the highest mobility up to 1.5 cm2 V?1 s?1) and excellent environmental stability and flexibility, indicating the cost effectiveness of this method for practical applications in organic electronics.  相似文献   

18.
A water‐soluble conjugated polymer (WCP) poly[(3,4‐dibromo‐2,5‐thienylene vinylene)‐co‐(p‐phenylene‐vinylene)] (PBTPV), containing thiophene rings with high charge‐carrier mobility and benzene rings with excellent solubility is designed and prepared through Wessling polymerization. The PBTPV precursor can be easily processed by employing water or alcohols as the solvents, which are clean, environmentally friendly, and non‐toxic compared with the highly toxic organic solvents such as chloroform and chlorobenzene. As a novel photoelectric material, PBTPV presents excellent hole‐transport properties with a carrier mobility of 5 × 10?4 cm2 V?1 s?1 measured in an organic field‐effect transistor device. By integrating PBTPV with aqueous CdTe nanocrystals (NCs) to produce the active layer of water‐processed hybrid solar cells, the devices exhibit effective power conversion efficiency up to 3.3%. Moreover, the PBTPV can form strong coordination interactions with the CdTe NCs through the S atoms on the thiophene rings, and effective coordination with other nanoparticles can be reasonably expected.  相似文献   

19.
In this paper a simple, casting solution technique for the preparation of two‐dimensional (2D) arrays of very‐high molecular weight (MW) 1D‐Pc supramolecular inorganic polymers is described. The soluble fluoroaluminium tetra‐tert‐butylphthalocyanine (ttbPcAlF) is synthesized and characterized, which can be self‐assembled to form 2D arrays of very‐high‐MW 1D‐Pc supramolecular inorganic polymers. High‐resolution transmission electron microscopy (HRTEM) demonstrates that the 1D‐ttbPcAlF, having a cofacial ring spacing of ~0.36 nm and an interchain distance of ~1.7 nm, self‐assembles into 2D‐nanosheets (~140 nm in length, ~20 nm in width, and equivalent to MW of 3.2 × 105 g mol?1). The film cast from a 1,2‐dichloroethane (DCE) solution shows a minimum hole‐mobility of ~0.3 cm2 V?1 s?1 at room temperature by flash‐photolysis time‐resolved microwave conductivity (TRMC) measurements and a fairly high dark dc‐conductivity of ~1 × 10?3 S cm?1.  相似文献   

20.
A donor–acceptor (D–A) semiconducting copolymer, PDPP‐TVT‐29, comprising a diketopyrrolopyrrole (DPP) derivative with long, linear, space‐separated alkyl side‐chains and thiophene vinylene thiophene (TVT) for organic field‐effect transistors (OFETs) can form highly π‐conjugated structures with an edge‐on molecular orientation in an as‐spun film. In particular, the layer‐like conjugated film morphologies can be developed via short‐term thermal annealing above 150 °C for 10 min. The strong intermolecular interaction, originating from the fused DPP and D–A interaction, leads to the spontaneous self‐assembly of polymer chains within close proximity (with π‐overlap distance of 3.55 Å) and forms unexpectedly long‐range π‐conjugation, which is favorable for both intra‐ and intermolecular charge transport. Unlike intergranular nanorods in the as‐spun film, well‐conjugated layers in the 200 °C‐annealed film can yield more efficient charge‐transport pathways. The granular morphology of the as‐spun PDPP‐TVT‐29 film produces a field‐effect mobility (μ FET) of 1.39 cm2 V?1 s?1 in an OFET based on a polymer‐treated SiO2 dielectric, while the 27‐Å‐step layered morphology in the 200 °C‐annealed films shows high μ FET values of up to 3.7 cm2 V?1 s?1.  相似文献   

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