Virus Filtration Membranes Prepared from Nanoporous Block Copolymers with Good Dimensional Stability under High Pressures and Excellent Solvent Resistance

We introduce a nanoporous membrane suitable for virus filtration with good dimensional stability under high pressures maintaining high selectivity. The membrane consists of a double layer: The upper layer is a nanoporous film with pore size of ～17 nm and a thickness of ～160 nm, which was prepared by polystyrene‐block‐poly(methyl methacrylate) copolymer (PS‐b‐PMMA) where PMMA block was removed by ultraviolet irradiation followed by rinsing with acetic acid. The nanoporous block copolymer film was combined with a conventional micro‐filtration membrane to enhance mechanical strength. The membrane employed in this study did not show any damage or crack even at a pressure of 2 bar, while high selectivity was maintained for the filtration of human rhinovirus type 14 which has a diameter of ～30 nm and is a major pathogen of the common cold in humans. Furthermore, due to crosslinked PS matrix during the UV irradiation, the nanoporous membrane showed excellent resistance to all organic solvents. This could be used under harsh filtration conditions such as high temperature and strong acidic (or basic) solution.     

Vertical Orientation of Nanodomains on Versatile Substrates through Self‐Neutralization Induced by Star‐Shaped Block Copolymers

Vertical orientation of lamellar and cylindrical nanodomains of block copolymers on substrates is one of the most promising means for developing nanopatterns of next‐generation microelectronics and storage media. However, parallel orientation of lamellar and cylindrical nanodomains is generally preferred due to different affinity between two block segments in a block copolymer toward the substrate and/or air. Thus, vertical orientation of the nanodomains is only obtained under various pre‐ or post‐treatments such as surface neutralization by random copolymers, solvent annealing, and electric or magnetic field. Here, a novel self‐neutralization concept is introduced by designing molecular architecture of a block copolymer. Star‐shaped 18 arm poly(methyl methacrylate)‐block‐polystyrene copolymers ((PMMA‐b‐PS)₁₈) exhibiting lamellar and PMMA cylindrical nanodomains are synthesized. When a thin film of (PMMA‐b‐PS)₁₈ is spin‐coated on a substrate, vertically aligned lamellar and cylindrical nanodomains are obtained without any pre‐ or post‐treatment, although thermal annealing for a short time (less than 30 min) is required to improve the spatial array of vertically aligned nanodomains. This result is attributed to the star‐shaped molecular architecture that overcomes the difference in the surface affinity between PS and PMMA chains. Moreover, vertical orientations are observed on versatile substrates, for instance, semiconductor (Si, SiO_x), metal (Au), PS or PMMA‐brushed substrate, and a flexible polymer sheet of polyethylene naphthalate.     

Controlled Topology of Block Copolymer Gate Insulators by Selective Etching of Cylindrical Microdomains in Pentacene Organic Thin Film Transistors

We investigate the effect of surface topology of a block copolymer/neutral surface/SiO₂ trilayered gate insulator on the properties of pentacene organic thin film transistor (OTFT) by the controlled etching of self assembled poly(styrene‐b‐methyl methacrylate) (PS‐b‐PMMA) block copolymer. The rms roughness of the uppermost block copolymer film directly in contact with pentacenes was systematically controlled from 0.27 nm to approximately 12.5 nm by the selective etching of cylindrical PMMA microdomains hexagonally packed and aligned perpendicular to SiO₂ layer with 20 and 38 nm of diameter and periodicity, respectively. Both mobility and On/Off ratio were significantly reduced by more than 3 orders of magnitudes with the film roughness in OTFTs having 60 nm thick pentacene active layer. The poor device performance observed with the etched thin film of block copolymer dielectric is attributed to a defective pentacene active layer and the mixed crystalline structure consisting of thin film and bulk phase arising from the massive nucleation of pentacene preferentially at the edge of each cylindrical etched hole.     

Boosting Sensitivity and Reliability in Field-Effect Transistor-Based Biosensors with Nanoporous MoS2 Encapsulated by Non-Planar Al2O3 (Adv. Funct. Mater. 42/2023)

Field-effect transistors-based biosensors (bio-FETs) have been considered an important technology for label-free and ultrasensitive point-of-care diagnostics. However, practical applications using bio-FETs are limited due to the trade-off between sensing reliability and sensitivity. This study suggests a reliable and sensitive bio-FETs based on nanoporous molybdenum disulfide (MoS₂) channels encapsulated by a non-planar high-k aluminum oxide (Al₂O₃) dielectric layer. Nanoporous MoS₂ thin film is fabricated with an abundant edge area and periodically ordered nanopores via block copolymer lithography. The ultra-thin Al₂O₃ dielectric layer deposited along the nanoporous structure of the MoS₂ realizes effective electrostatic control of charged biomolecules over the MoS₂ channel. In addition, it plays important roles in not only enhancing the electrical performance of the nanoporous MoS₂ bio-FETs, that is, mobility, hysteresis, and subthreshold swing, but also achieving effective biomolecular immobilization on the device surface. The nanoporous MoS₂ channel structure surrounded by non-planar Al₂O₃ detects a prostate cancer biomarker with an ultra-low limit of detection of 1 fg mL⁻¹. Moreover, the excellent selectivity, high sensitivity, and clinical reliability of the nanoporous MoS₂ bio-FETs are also confirmed. The proposed device platform provides new insights and technical advances in the field of FETs based sensors for future point-of-care devices.     

High‐Performance Micro‐Solid Oxide Fuel Cells Fabricated on Nanoporous Anodic Aluminum Oxide Templates

Micro‐solid oxide fuel cells (μ‐SOFCs) are fabricated on nanoporous anodic aluminum oxide (AAO) templates with a cell structure composed of a 600‐nm‐thick AAO free‐standing membrane embedded on a Si substrate, sputter‐deposited Pt electrodes (cathode and anode) and an yttria‐stabilized zirconia (YSZ) electrolyte deposited by pulsed laser deposition (PLD). Initially, the open circuit voltages (OCVs) of the AAO‐supported μ‐SOFCs are in the range of 0.05 V to 0.78 V, which is much lower than the ideal value, depending on the average pore size of the AAO template and the thickness of the YSZ electrolyte. Transmission electron microscopy (TEM) analysis reveals the formation of pinholes in the electrolyte layer that originate from the porous nature of the underlying AAO membrane. In order to clog these pinholes, a 20‐nm thick Al₂O₃ layer is deposited by atomic layer deposition (ALD) on top of the 300‐nm thick YSZ layer and another 600‐nm thick YSZ layer is deposited after removing the top intermittent Al₂O₃ layer. Fuel cell devices fabricated in this way manifest OCVs of 1.02 V, and a maximum power density of 350 mW cm^?2 at 500 °C.     

Arrays of Inorganic Nanodots and Nanowires Using Nanotemplates Based on Switchable Block Copolymer Supramolecular Assemblies

Here, a novel and simple route to fabricate highly dense arrays of palladium nanodots and nanowires with sub‐30 nm periodicity using nanoporous templates fabricated from supramolecular assemblies of a block copolymer, polystyrene‐block‐poly(4‐vinylpyridine) (PS‐b‐P4VP) and a low molecular weight additive, 2‐(4′‐hydroxybenzeneazo) benzoic acid (HABA) is demonstrated. The palladium nanoparticles, which are directly deposited in the nanoporous templates from an aqueous solution, selectively migrate in the pores mainly due to their preferential attraction to the P4VP block covering the pore wall. The polymer template is then removed by oxygen plasma etching or pyrolysis in air resulting in palladium nanostructures whose large scale morphology mirrors that of the original template. The method adopted in this work is general and versatile so that it could easily be extended for patterning a variety of metallic materials into dot and wire arrays.     

Physicochemically Stable Polymer‐Coupled Oxide Dielectrics for Multipurpose Organic Electronic Applications

A chemically coupled polymer layer is introduced onto inorganic oxide dielectrics from a dilute chlorosilane‐terminated polystyrene (PS) solution. As a result of this surface modification, hydrophilic‐oxide dielectrics gain hydrophobic, physicochemically stable properties. On such PS‐coupled SiO₂ or AlO_x dielectrics, various vacuum‐ and solution‐processable organic semiconductors can develop highly ordered crystalline structures that provide higher field‐effect mobilities (μ_FETs) than other surface‐modified systems, and negligible hysteresis in organic field‐effect transistors (OFETs). In particular, the use of PS‐coupled AlO_x nanodielectrics enables a solution‐processable triethylsilylethynyl anthradithiophene OFET to operate with μ_FET ～ 1.26 cm² V^?1 s^?1 at a gate voltage below –1 V. In addition, a complementary metal‐oxide semiconductor‐like organic inverter with a high voltage gain of approximately 32 was successfully fabricated on a PS‐coupled SiO₂ dielectric.     

Nanoporous Ultra‐Low‐Dielectric‐Constant Fluoropolymer Films via Selective UV Decomposition of Poly(pentafluorostyrene)‐block‐Poly(methyl methacrylate) Copolymers Prepared Using Atom Transfer Radical Polymerization

Block copolymers of poly(pentafluorostyrene) (PFS) and poly(methyl methacrylate) (PMMA) (PFS‐b‐PMMA) have been synthesized using atom transfer radical polymerization (ATRP). Then, nanoporous fluoropolymer films have been prepared via selective UV decomposition of the PMMA blocks in the PFS‐b‐PMMA copolymer films. The chemical composition and structure of the PFS homopolymers and copolymers have been characterized using nuclear magnetic resonance (NMR) spectroscopy, thermogravimetric analysis (TGA), X‐ray photoelectron spectroscopy (XPS), time‐of‐flight secondary‐ion mass spectrometry (ToF‐SIMS), and molecular‐weight measurements. The cross‐sectional and surface morphologies of the PFS‐b‐PMMA copolymer films before and after selective UV decomposition of the PMMA blocks have been studied using field‐emission scanning electron microscopy (FESEM). The nanoporous fluoropolymer films with pore sizes in the range 30–50 nm and porosity in the range 15–40 % have been obtained from the PFS‐b‐PMMA copolymers of different PMMA content. Dielectric constants approaching 1.8 have been achieved in the nanoporous fluoropolymer films which contain almost completely decomposed PMMA blocks.     

Oriented Growth of Al2O3:ZnO Nanolaminates for Use as Electron‐Selective Electrodes in Inverted Polymer Solar Cells

Atomic layer deposition is used to synthesize Al₂O₃:ZnO(1:x) nanolaminates with the number of deposition cycles, x, ranging from 5 to 30 for evaluation as optically transparent, electron‐selective electrodes in polymer‐based inverted solar cells. Al₂O₃:ZnO(1:20) nanolaminates are found to exhibit the highest values of electrical conductivity (1.2 × 10³ S cm^?1; more than six times higher than for neat ZnO films), while retaining a high optical transmittance (≥80% in the visible region) and a low work function (4.0 eV). Such attractive performance is attributed to the structure (ZnO crystal size and crystal alignment) and doping level of this intermediate Al₂O₃:ZnO film composition. Polymer‐based inverted solar cells using poly(3‐hexylthiophene) (P3HT):phenyl‐C₆₁‐butyric acid methyl ester (PCBM) mixtures in the active layer and Al₂O₃:ZnO(1:20) nanolaminates as transparent electron‐selective electrodes exhibit a power conversion efficiency of 3% under simulated AM 1.5 G, 100 mW cm^?2 illumination.     

Highly Nonstoichiometric YAG Ceramics with Modified Luminescence Properties

Y₃Al₅O₁₂ (YAG) is a widely used phosphor host. Its optical properties are controlled by chemical substitution at its YO₈ or AlO₆/AlO₄ sublattices, with emission wavelengths defined by rare-earth and transition-metal dopants that have been explored extensively. Nonstoichiometric compositions Y_3+xAl_5-xO₁₂ (x ≠ 0) may offer a route to new emission wavelengths by distributing dopants over two or more sublattices simultaneously, producing new local coordination environments for the activator ions. However, YAG typically behaves as a line phase, and such compositions are therefore challenging to synthesize. Here, a series of highly nonstoichiometric Y_3+xAl_5-xO₁₂ with 0 ≤ x ≤ 0.40 is reported, corresponding to ≤20% of the AlO₆ sublattice substituted by Y³⁺, synthesized by advanced melt-quenching techniques. This impacts the up-conversion luminescence of Yb³⁺/Er³⁺-doped systems, whose yellow-green emission differs from the red-orange emission of their stoichiometric counterparts. In contrast, the YAG:Ce³⁺ system has a different structural response to nonstoichiometry and its down-conversion emission is only weakly affected. Analogous highly nonstoichiometric systems should be obtainable for a range of garnet materials, demonstrated here by the synthesis of Gd_3.2Al_4.8O₁₂ and Gd_3.2Ga_4.8O₁₂. This opens pathways to property tuning by control of host stoichiometry, and the prospect of improved performance or new applications for garnet-type materials.     

A Step‐Wise Approach for Dual Nanoparticle Patterning via Block Copolymer Self‐Assembly

A novel step‐wise approach for fabrication of periodic arrays of two different types of nanoparticles (NPs), selectively localized at different block copolymer phases is demonstrated. In the first step, pre‐synthesized ≈12 nm silver nanoparticles (AgNPs), stabilized with thiol‐terminated polystyrene, are mixed with poly(styrene‐block‐vinylpyridine) (PS‐b‐PVP) block copolymer in a common solvent. After film casting and consequent solvent vapor annealing the AgNPs are selectively localized within the PS phase of the block copolymer matrix due to the interaction with PS shell of the nanoparticles. In the second step, ≈2–5 nm gold, platinum, or palladium nanoparticles are directly deposited from their aqueous dispersion on the PVP domains of the self‐assembled block copolymer thin films. In such a way, thin films of nanostructured block copolymer with two types of nanoparticles, separated by the two distinct block copolymer phases, are prepared in a step‐wise manner. The presented method is very simple and can be applied for various combinations of pre‐synthesized nanoparticles where the characteristics of either type of nanoparticles are tuned accordingly in advance, which is more difficult to achieve for in situ synthesized nanoparticles.     

Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3

Atomic‐layer‐deposited aluminium oxide (Al₂O₃) is applied as rear‐surface‐passivating dielectric layer to passivated emitter and rear cell (PERC)‐type crystalline silicon (c‐Si) solar cells. The excellent passivation of low‐resistivity p‐type silicon by the negative‐charge‐dielectric Al₂O₃ is confirmed on the device level by an independently confirmed energy conversion efficiency of 20·6%. The best results are obtained for a stack consisting of a 30 nm Al₂O₃ film covered by a 200 nm plasma‐enhanced‐chemical‐vapour‐deposited silicon oxide (SiO_x) layer, resulting in a rear surface recombination velocity (SRV) of 70 cm/s. Comparable results are obtained for a 130 nm single‐layer of Al₂O₃, resulting in a rear SRV of 90 cm/s. Copyright © 2008 John Wiley & Sons, Ltd.     

The optical properties of monolayer amorphous Al2O3–TiO2 composite films used as HT-APSM blanks for ArF immersion lithography

Amorphous (Al₂O₃)_x–(TiO₂)_1−x composite films are prepared using r.f. unbalanced magnetron sputtering in an atmosphere of argon and oxygen at room temperature. The optical constants of (Al₂O₃)_x–(TiO₂)_1−x composite films are linearly dependent on the Al₂O₃ mole fraction in the Al₂O₃–TiO₂ composite film. The optical constants of these Al₂O₃–TiO₂ composite films can be made to meet the optical requirements for a high transmittance attenuated phase shift mask (HT-APSM) blank by tuning the Al₂O₃ mole fraction. The Al₂O₃ mole fraction range that would allow the films to meet the optical requirements of an HT-APSM blank for ArF immersion lithography is calculated to be between 76% and 84%. One π-phase-shifted Al₂O₃–TiO₂ composite thin film to be used as an HT-APSM blank for ArF immersion lithography is fabricated and is shown to satisfy the optical requirements.     

Laser processing of Al2O3/a‐SiCx:H stacks: a feasible solution for the rear surface of high‐efficiency p‐type c‐Si solar cells

We explore the potential of laser processing aluminium oxide (Al₂O₃)/amorphous silicon carbide (a‐SiC_x:H) stacks to be used at the rear surface of p‐type crystalline silicon (c‐Si) solar cells. For this stack, excellent quality surface passivation is measured with effective surface recombination velocities as low as 2 cm/s. By means of an infrared laser, the dielectric film is locally opened. Simultaneously, part of the aluminium in the Al₂O₃ film is introduced into the c‐Si, creating p+ regions that allow ohmic contacts with low‐surface recombination velocities. At optimum pitch, high‐efficiency solar cells are achievable for substrates of 0.5–2.5 Ω cm. Copyright © 2012 John Wiley & Sons, Ltd.     

Approach for Al2O3 rear surface passivation of industrial p‐type Si PERC above 19%

Atomic layer deposition (ALD) of thin Al₂O₃ (≤10 nm) films is used to improve the rear surface passivation of large‐area screen‐printed p‐type Si passivated emitter and rear cells (PERC). A blister‐free stack of Al₂O₃/SiO_x/SiN_x is developed, leading to an improved back reflection and a rear recombination current (J_0,rear) of 92 ± 6 fA/cm². The Al₂O₃/SiO_x/SiN_x stack is blister‐free if a 700°C anneal in N₂ is performed after the Al₂O₃ deposition and prior to the SiO_x/SiN_x capping. A clear relationship between blistering density and lower open‐circuit voltage (V_OC) due to increased rear contacting area is shown. In case of the blister‐free Al₂O₃/SiO_x/SiN_x rear surface passivation stack, an average cell efficiency of 19.0% is reached and independently confirmed by FhG‐ISE CalLab. Compared with SiO_x/SiN_x‐passivated PERC, there is an obvious gain in V_OC and short‐circuit current (J_SC) of 5 mV and 0.2 mA/cm², respectively, thanks to improved rear surface passivation and rear internal reflection. Copyright © 2012 John Wiley & Sons, Ltd.     

Parameters of metal one-electron transistors based on various materials

Limiting parameters (operating temperature and cutoff frequency) and current-voltage characteristics of one-electron transistors based on various metal compounds (Al/AlO_x/Al, Al/SiO₂/Al, Au/Al₂O₃/Au, Nb/Al₂O₃/Nb, Ti/TiO_x/Ti, Cr/Cr₂O₃/Cr, and Nb/NbO_x/Nb) were theoretically studied. Practical recommendations for the choice of materials and structure sizes were formulated. The characteristics were calculated using a SET-NANODEV software package based on the effect of one-electron tunneling and developed for structure simulation according to a technique for estimating the limiting parameters and a two-dimensional numerical model of the metal one-electron transistor.     

Enhanced Relaxometric Properties of MRI “Positive” Contrast Agents Confined in Three‐Dimensional Cubic Mesoporous Silica Nanoparticles

Mesoporous silica nanoparticles (MSNs) are of growing interest for the development of novel probes enabling efficient tracking of cells in vivo using magnetic resonance imaging (MRI). The incorporation of Gd³⁺ paramagnetic ions into highly porous MSNs is a powerful strategy to synthesize “positive” MRI contrast agents for more quantitative T₁‐weighted MR imaging. Within this context, different strategies have been reported to integrate Gd chelates to 2D pore network MSNs. As an alternative, we report on the modulation of the pore network topology through the preparation of a 3D pore network hybrid GdSi_xO_y MSN system. In this study, 2D GdSi_xO_y‐MSNs with similar porosity and particle size were also prepared and the relaxometric performances of both materials, directly compared. Both syntheses lead to water‐dispersible MSNs suspensions (particle size < 200 nm), which were stable for at least 48h. 3D GdSi_xO_y‐MSNs provided a significant increase in ¹H longitudinal relaxivity (18.5 s^?1mM^?1; 4.6 times higher than Gd‐DTPA) and low r₂/r₁ ratios (1.56) compatible with the requirements of “positive” contrast agents for MRI. These results demonstrate the superiority of a 3D pore network to host paramagnetic atoms for MRI signal enhancement using T₁‐weighted imaging. Such an approach minimizes the total amount of paramagnetic element per particle.     

CdS/CdTe thin‐film solar cells with Cu‐free transition metal oxide/Au back contacts

Superstrate CdS/CdTe thin‐film solar cells with Cu‐free transition metal oxide (TMO)/Au and Au‐only back contacts have been fabricated. The TMOs include MoO_3‐x, V₂O_5‐x, and WO_3‐x. The incorporation of the TMO buffer layers at the back contacts resulted in significant improvement on open‐circuit voltage (V_OC) as compared with the cells with Cu‐free Au‐only back contacts. Among the cells using TMO buffer layers, the ones with MoO_3‐x buffer layers exhibited the best performance, yielding an efficiency of 14.1% under AM1.5 illumination with V_OC of 815 mV and a fill factor of 67.9%. Though the performance is slightly behind the best reference cell with a Cu/Au back contact fabricated in our lab with V_OC of 844 mV, fill factor of 76.3%, and efficiency of 15.7%, the use of Cu‐free back contacts may lead to improved long‐term cell stability. Copyright © 2013 John Wiley & Sons, Ltd.     

Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf0.5Zr0.5O2 Tunnel Devices

Films of Hf_0.5Z_0.5O₂ (HZO) contain a network of grain boundaries. In (111) HZO epitaxial films on (001) SrTiO₃, for instance, twinned orthorhombic (o‐HZO) ferroelectric crystallites coexist with grain boundaries between o‐HZO and a residual paraelectric monoclinic (m‐HZO) phase. These grain boundaries contribute to the resistive switching response in addition to the genuine ferroelectric polarization switching and have detrimental effects on device performance. Here, it is shown that, by using suitable nanometric capping layer deposited on HZO film, a radical improvement of the operation window of the tunnel device can be achieved. Crystalline SrTiO₃ and amorphous AlO_x are explored as capping layers. It is observed that these layers conformally coat the HZO surface and allow to increase the yield and homogeneity of ferroelectric junctions while strengthening endurance. Data show that the capping layers block ionic‐like transport channels across grain boundaries. It is suggested that they act as oxygen suppliers to the oxygen‐getters grain boundaries in HZO. In this scenario it could be envisaged that these and other oxides could also be explored and tested for fully compatible CMOS technologies.     

CdS‐Nanoparticle/Polymer Composite Shells Grown on Silica Nanospheres by Atom‐Transfer Radical Polymerization

In this paper we describe the combined use of surface‐initiated atom transfer radical polymerization (ATRP) and a gas/solid reaction in the direct preparation of CdS‐nanoparticle/block‐copolymer composite shells on silica nanospheres. The block copolymer, consisting of poly(cadmium dimethacrylate) (PCDMA) and poly(methyl methacrylate) (PMMA), is obtained by repeatedly performing the surface‐initiated ATRP procedures in N,N‐dimethylformamide (DMF) solution at room temperature, using cadmium dimethacrylate (CDMA) and methyl methacrylate (MMA) as the monomers. CdS nanoparticles with an average size of about 3 nm are generated in situ by exposing the silica nanospheres coated with block‐copolymer shells to H₂S gas. These synthetic core–shell nanospheres were characterized using transmission electron microscopy (TEM), dynamic light scattering (DLS), thermogravimetric analysis (TGA), diffuse reflectance UV‐vis spectroscopy, X‐ray photoelectron spectroscopy (XPS), and powder X‐ray diffraction (XRD). These composite nanospheres exhibit strong red photoluminescence in the solid state at room temperature.