高高宽比硬X射线聚焦波带片的制作

相对于软X射线显微成像,硬X射线显微成像对菲涅尔波带片的吸收体厚度提出了更高的要求.采用电子束光刻和X射线光刻复制的方法,在聚酰亚胺薄膜上成功制作了高高宽比的菲涅尔波带片.首先利用电子束光刻和微电镀技术制作了X射线光刻的掩模,然后利用X射线光刻和微电镀制作了高高宽比、线条侧壁陡直的菲涅尔波带片.复制后的波带片最外环宽度500 nm,直径1 mm,吸收体金厚度为3.6μm,高宽比达到7.2,可用于10 keV～25 keV的硬X射线成像.     

无掩模光刻技术研究

介绍了无掩模光刻技术的现状和存在的问题,并对几种常见的无掩模光刻技术进行了详细的对比分析.研究表明,扫描电子束光刻具有极高的分辨率,但是生产效率较低;波带片阵列光刻技术已经在理论和实验上取得了广泛的成果,在保持无掩模光刻技术高分辨力的同时,对电子束的低效率将是一种补充,是一种很有潜力的用于制作掩模版的光刻技术.     

纳米压印光刻技术--下一代批量生产的光刻技术

纳米压印光刻技术已被证实是纳米尺寸大面积结构复制的最有前途的下一代技术之一。这种速度快、成本低的方法成为生物化学、μ级流化学、μ-TAS和通信器件制造以及纳米尺寸范围内广泛应用的一种日渐重要的方法,如生物医学、纳米流体学、纳米光学应用、数据存储等领域。由于标准光刻系统的波长限制、巨大的开发工作量、以及高昂的工艺和设备成本,纳米压印光刻技术可能成为主流IC产业中一种真正富有竞争性方法。对细小到亚10nm范围内的极小复制结构,纳米压印技术没有物理极限。从几种纳米压印光刻技术中选择两种前景广阔的方法——热压印光刻(HEL)和紫外压印光刻(UV-NIL)技术给予介绍。两种技术对各种各样的材料以及全部作图的衬底大批量生产提供了快速印制。重点介绍了HEL和UV-NIL两种技术的结果。全片压印尺寸达200mm直径,图形分辨力高,拓展到纳米尺寸范围。     

纳米压印技术进展及应用

半导体加工几十年里一直采用光学光刻技术实现图形转移,最先进的浸润式光学光刻在45 nm节点已经形成产能,然而,由于光学光刻技术固有的限制,已难以满足半导体产业继续沿着摩尔定律快速发展.在下一代图形转移技术中,电子束直写、X射线曝光和纳米压印技术占有重要地位.其中纳米压印技术具有产量高、成本低和工艺简单的优点,是纳米尺寸电子器件的重要制作技术.介绍了传统纳米压印技术以及纳米压印技术的新进展,如热塑纳米压印技术、紫外固化纳米压印技术、微接触纳米压印技术、气压辅助纳米压印技术、激光辅助压印技术、静电辅助纳米压印技术、超声辅助纳米压印技术和滚轴式纳米压印技术等.     

高分辨率SiNx纳米压印模板的快速制备工艺

纳米压印技术是近年来国际新兴的纳米光刻技术,具有高分辨率、高效率和低成本等优点。本文结合电子束光刻技术和干法刻蚀技术开发了简洁的纳米压印SiNx光栅模板制造工艺。为提高工艺效率,引进高灵敏度的化学放大胶NEB-22胶（负性胶）作为电子光刻胶,用电子束光刻技术在NEB-22上刻出光栅图形,再利用其作为掩膜,经反应离子刻蚀后,将光栅图形转移到氮化硅上,得到所需模板。文中详细研究了NEB-22胶的电子束光刻特性及其干法刻蚀特性,指出了它作为电子束光刻胶的优点及它相对于铬掩膜而言作为干法刻蚀掩膜的不足。     

纳米压印光刻模版制作技术

在下一代光刻技术中,光刻的成本越来越高,这使得工业界开始寻找新的技术。纳米压印作为非光学的下一代光刻技术,具有分辨率高、成本低、产率高等诸多优点,因而可能应用于将来的半导体制造中。同时,纳米压印也可以用于微机电系统(MEMS)和其他纳米结构的图形复制。纳米压印光刻技术主要包括热压印、紫外固化压印和微接触法压印。介绍了在这3种纳米压印光刻技术中,压印模版制作的制作工艺和模版表面的防粘连处理,并且讨论3种压印方法适用的不同领域。     

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纳米压印掩膜复制缩减光刻拥有成本随着纳米压印光刻很好地解决了分辨率的问题,关注的焦点转移到了拥有成本(CoO)上。本文重点研究了掩膜成本,包括一种称为"掩膜复制"的方     

衍射光学元件在无掩模光刻中的应用

描述了波带片/多孔透镜阵列无掩模光刻方法,着重介绍了波带片的几何结构特点和衍射聚焦特性,研究了影响光刻分辨率的因素和使用位相型波带片代替振幅型波带片提高衍射效率的设计方法,讨论了高级衍射焦点对波带片的光刻对比度的影响及消除措施,表明了波带片光刻有光刻对比度和高光刻分辨率受限于最小结构尺寸两个技术难点。对比介绍了多孔透镜的结构和衍射聚焦原理,论述了利用多孔透镜抑制高级衍射焦点和焦平面上次级大的特性,可以提高光刻对比度、提高光刻分辨率、克服波带片受限于最小结构尺寸的缺点。     

纳米光刻对准方法及其原理

对准技术对光刻分辨力的提高有着重要作用。45nm节点以下的光刻技术如纳米压印等,对相应的对准技术提出了更高的要求。对光刻技术发展以来主要用于接近接触式和纳米压印光刻的对准技术做总结分类,为高精度的纳米级光刻对准技术提供理论研究基础和方向。经过分析,从原理上将对准技术分为几何成像对准、波带片对准、干涉光强度对准、外差干涉对准及莫尔条纹等五种对准方法。最后结论得出基于条纹空间相位的对准方法具有最好的抗干扰能力且理论上能达到最高的对准精度,而其他基于光强的对准方法的精度更易受到工艺涂层的影响。因此,基于干涉条纹空间相位对准的方法在纳米级光刻对准中具有很好的理论前景。     

大规模集成电路制作中的光刻技术——紫外线曝光和电子束曝光

本文从实用于大规模集成电路制备的观点出发,对紫外线光刻和电子束光刻图形制作工艺中的问题进行了综述。在紫外线光刻方面,对接触曝光和投影曝光的对比、图形对准精度和正性胶图形的缺陷进行了讨论;对电子束曝光亦进行了讨论,这里包括扫描电子束曝光系统的稳定性、绘图精度、电子束光刻胶特性及其在有掩模制备和芯片直接曝光方面的应用等问题。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks