半导体激光器阵列隔离槽的湿法腐蚀

研究了几种腐蚀液对半导体激光器阵列外延材料的腐蚀过程,其中HF(40%)/CrO3(33wt%)腐蚀液比较适合,用扫描电子显微镜(SEM)对其腐蚀情况进行了分析,并给出了利用这种腐蚀液进行腐蚀的半导体激光器阵列隔离槽的图像.通过调节HF/CrO3腐蚀液的体积比(从0.02到0.2),确定了AlxGa1-xAs组分渐变材料的腐蚀条件(室温23℃,腐蚀时间4min)以及最佳配比(体积比为0.1).利用这种腐蚀液得到的腐蚀图形可以满足激光器阵列的要求.     

HF/CrO3溶液对AlGaAs的选择性湿法刻蚀应用于楔型结构的制备

利用动态掩膜腐蚀技术,研究了HF/CrO3腐蚀液对各种不同组分的AlxGa1-xAs(x＝0.3,0.5,0.65)的腐蚀速率及腐蚀表面形貌.随着HF(48wt%)/CrO3(33wt%)的体积比由0.01变化到0.138,相应的腐蚀液对Al0.8-Ga0.2As/Al0.3Ga0.7As的选择性由179降到8.6;通过调节腐蚀液的选择性,在Al0.3Ga0.7As外延层上制备出了倾角从0.32°到6.61°的各种斜面.当HF(48wt%)/CrO3(33wt%)的体积比为0.028时,Al组分分别为0.3、0.5和0.65时,相应的腐蚀表面的均方根粗糙度为1.8、9.1和19.3nm.另外,还分析了腐蚀机理与腐蚀表面形貌之间的关系.     

HCl/HF/CrO3溶液对 InGaAs/InGaAsP的选择性湿法刻蚀--应用于楔形结构的制备

利用动态掩膜湿法腐蚀技术,研究了HCl/HF/CrO3溶液对与InP衬底晶格匹配的InxGa1-xAs1-yPy(y=0,0.2,0.4,0.6)材料的腐蚀特性.对于HCl(36wt%)/HF(40wt%)/CrO3(10wt%)的体积比为x∶0.5∶1的溶液,随着x由0增加到1.25,相应的腐蚀液对In0.53Ga0.47As/In0.72Ga0 28As06P0.4的选择性由42.4降到1.4;通过调节腐蚀液的选择性,在In072Ga0.28As06P0.4外延层上制备出了倾角从1.35°到35.9°的各种楔形结构;当x为0.025和1.25时,相应的In0.72Ga0.28As0.6P0.4腐蚀表面的均方根粗糙度分别为1.1nm和1.6nm.还研究了溶液的组分与InxGa1-xAs1-yPy(y=0,0.2,0.4)的腐蚀速率间的关系,并对腐蚀机理进行了分析.     

HF/CrO3溶液对AlGaAs的选择性湿法刻蚀应用于楔型结构的制备

利用动态掩膜腐蚀技术,研究了HF/CrO3腐蚀液对各种不同组分的AlxGa1-xAs(x＝0.3,0.5,0.65)的腐蚀速率及腐蚀表面形貌.随着HF(48wt%)/CrO3(33wt%)的体积比由0.01变化到0.138,相应的腐蚀液对Al0.8-Ga0.2As/Al0.3Ga0.7As的选择性由179降到8.6;通过调节腐蚀液的选择性,在Al0.3Ga0.7As外延层上制备出了倾角从0.32°到6.61°的各种斜面.当HF(48wt%)/CrO3(33wt%)的体积比为0.028时,Al组分分别为0.3、0.5和0.65时,相应的腐蚀表面的均方根粗糙度为1.8、9.1和19.3nm.另外,还分析了腐蚀机理与腐蚀表面形貌之间的关系.     

HCl/HF/CrO3溶液对InGaAs/InGaAsP的选择性湿法刻蚀——应用于楔形结构的制备

利用动态掩膜湿法腐蚀技术，研究了HCl/HF/CrO3溶液对与InP衬底晶格匹配的InxGa1－xAs1－yPy(y=0,0.2,0.4,0.6)材料的腐蚀特性．对于HCl(36wt%)/HF(40wt%)/CrO3(10wt%)的体积比为x∶0.5∶1的溶液，随着x由0增加到1.25，相应的腐蚀液对In0.53Ga0.47As/In0.72Ga0.28As0.6P0.4的选择性由42.4降到1.4；通过调节腐蚀液的选择性，在In0.72Ga0.28As0.6P0.4外延层上制备出了倾角从1.35°到35.9°的各种楔形结构；当x为0.025和1.25时，相应的In0.72Ga0.28As0.6P0.4腐蚀表面的均方根粗糙度分别为1.1nm和1.6nm．还研究了溶液的组分与InxGa1－xAs1－yPy(y=0,0.2,0.4)的腐蚀速率间的关系，并对腐蚀机理进行了分析．     

湿法腐蚀DFB半导体激光器的均匀光栅的研究

论述了用湿法腐蚀电子束光刻的均匀光栅DFB激光器亚微米光栅的过程,研究了几种腐蚀液对半导体激光器外延材料中InP的腐蚀过程.用扫描电子显微镜(SEM)对其腐蚀情况进行了分析,通过调节腐蚀液HB1:HNO3:H2O的体积比,找到了对InP腐蚀的最佳配比(1:1:30)以及合适的腐蚀条件(室温23℃).利用这种腐蚀液得到的光栅图形可以满足DFB激光器的要求.     

InGaAs/AlGaAs半导体激光器二维阵列

用金属有机化合物气相淀积 (MOCVD)技术外延生长了InGaAs/AlGaAs分别限制应变单量子阱激光器材料。利用该材料制成半导体激光器一维线阵列 ,然后再串联组装成二维阵列 ,在 1 0 0 0 μs的输入脉宽下 ,输出峰值功率达到 730W (77A) ,输出光功率密度为 4 87W/cm2 ,中心激射波长为 90 3nm ,光谱半宽 (FWHM )为 4 4nm。在此条件下可以稳定工作 86 0 0h以上     

InAs/GaSb二类超晶格材料湿法腐蚀工艺研究

研究了不同腐蚀溶液体系下铟砷镓锑(InAs/GaSb)二类超晶格材料的湿法腐蚀工艺。根据腐蚀效果选择了由柠檬酸(C6H8O7)、磷酸(H3PO4)、过氧化氢(H2O2)构成的混合腐蚀液。这种腐蚀液对InAs/GaSb材料腐蚀速率稳定,腐蚀后表面光滑,且下切效应小。同时,研究了该成分腐蚀液不同腐蚀液温度、浓度和各成分配比等条件对InAs/GaSb材料腐蚀速率,形貌和钻蚀情况的影响。根据实验结果配制了体积比为1∶1∶1∶40的柠檬酸(50%):磷酸(85%):过氧化氢(31%):水的腐蚀溶液,室温(20 ℃)下腐蚀速率约为9.48 nm/s。     

多孔硅层湿法腐蚀现象的研究

阳极氧化法制备的多孔硅层分别经 1% HF、 1% NH3 / H2 O2 和 0 .0 5 % Na OH三种溶液在室温下进行湿法腐蚀 ,并用傅里叶变换红外光谱 (FTIR)和扫描电子显微镜 (SEM)对其变化进行了研究。腐蚀后多孔硅的表面形貌出现明显的刻蚀现象。红外吸收光谱表明 ,在用 1% NH3 / H2 O2 溶液腐蚀时 ,多孔硅层中 Si- O键和 Si- H键的强度增加 ,H- O键的强度下降 ;用 1% HF溶液和 0 .0 5 % Na OH溶液的腐蚀结果正好相反。 0 .0 5 %Na OH溶液对多孔硅层的腐蚀现象类似于强碱性溶液对单晶硅腐蚀表现出的各向异性 ,对多孔硅层厚度的腐蚀速度比 1% HF溶液的高     

低反射率多晶硅绒面的湿法制备研究

在多晶硅太阳电池制备工艺中,多晶硅表面制绒一直是研究热点,绒面的反射率以及形貌受到多个因素的影响。采用由HF,HNO3和H2O组成的腐蚀液对多晶硅进行腐蚀,研究了腐蚀时间,腐蚀液中HF与HNO3的体积比以及H2O在腐蚀液中的含量对制绒结果的影响。用分光光度计测量了制备绒面的反射率,并用扫描电镜观察了制备绒面的表面形貌。研究结果表明,腐蚀液中HF,HNO3和H2O的体积比对腐蚀坑的形貌有重要影响,而腐蚀坑形貌则决定了绒面反射率的高低。当腐蚀液中HF∶HNO3∶H2O体积比为5∶1∶2且腐蚀时间为3 min时,绒面在300 nm～900 nm波长范围内平均反射率最低,仅为20.4%,这是因为绒面中窄而深的腐蚀坑增强了硅片表面对光的吸收,降低了反射率。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.