碳—钛离子同步注入组织观察

在新型的TITAN离子注入系统中,采用组合阴极的方法,进行了碳—钛离子同步注入试验,对纯铁中的离子注入组织进行了电镜观察研究。碳离子注入形成了粒状的Fe_3C相,而碳—钛离子同步注入形成了条状的Fe_5C_2和Fe_2C等非平衡相组织     

C离子注入Si中Si-C合金的形成及其特征

利用离子注入和高温退火的方法在Si中生长了C含量为0.6%—1.0%的Si1-xCx合金,研究了注入过程中产生的损伤缺陷、注入C离子的剂量及退火工艺对合金形成的影响,探讨了合金的形成机理及合金产生的应变分布的起因．如果注入的C离子剂量小于引起Si非晶化的剂量,退火过程中注入产生的损伤缺陷容易与C原子结合形成缺陷团簇,难于形成Si1-xCx合金,而预先利用Si离子注入引进损伤有利于Si1-xCx合金的形成;但如果注入的C离子可以引起Si的非晶化,预先注入产生的损伤缺陷不利于Si1-xCx合金的形成．与慢速退火工艺相比,快速热退火工艺有利于Si1-xCx合金的形成．离子注入的C原子在空间分布不均匀,退火过程中将形成应变不同的Si1-x-Cx合金区域．     

C离子注入Si中Si-C合金的形成及其特征

利用离子注入和高温退火的方法在 Si中生长了 C含量为 0 .6 %— 1.0 %的 Si1 - x Cx 合金 ,研究了注入过程中产生的损伤缺陷、注入 C离子的剂量及退火工艺对合金形成的影响 ,探讨了合金的形成机理及合金产生的应变分布的起因 .如果注入的 C离子剂量小于引起 Si非晶化的剂量 ,退火过程中注入产生的损伤缺陷容易与 C原子结合形成缺陷团簇 ,难于形成 Si1 - x Cx 合金 ,而预先利用 Si离子注入引进损伤有利于 Si1 - x Cx 合金的形成 ;但如果注入的C离子可以引起 Si的非晶化 ,预先注入产生的损伤缺陷不利于 Si1 - x Cx 合金的形成 .与慢速退火工艺相比 ,快速     

离子注入金属材料表面改性

本文着重叙述了最近以来离子注入金属材料改性新的进展。离子注入金属的研究,其研究对象品种繁多,需要高注量,且样品形状复杂,因此离子注入金属中的物理问题比半导体离子注入更加复杂。包括各种离子注入多种金属所出现的溅射腐蚀、倾斜注入、特球形状注入、离子浓度分布、注入条件与金属相变的关系以及离子注入提高耐磨损机理等诸多难题。离子注入金属材料改性研究近年来极为活跃,已发表了不少评论文章。希望这篇评论能对从事离子束材料改性工作的人员有所帮助。     

离子注入机注入离子能量分布的计算机模拟

本文参考ＴＲＩＭ程序，建立用于模拟计算多种荷电态离子注入过程的程序。在此基础上，对注入离子荷电态进行拟合。本文的结论对注入离子束能量分析有应用价值。     

基于多价离子束流的高能量注入工艺研究

针对专用高能量注入设备价格昂贵、维护成本高等问题,研究了一种基于二价、三价离子束流提升中低能设备能量上限的离子注入工艺。利用离化质量分析谱线分析了多价离子的筛选,介绍了元素沾污和能量沾污的工艺风险及其防治方法,设计了多价离子和单价离子注入的对比实验。结果表明,在注入到硅片的多价离子与单价离子总能量相等的条件下,二者注入结深一致,测试片的方块电阻差异仅为2.5%,验证了此工艺的可行性,以期达到充分发挥设备潜力、优化产品工艺的目的。     

用于离子注入的高能大束流射频加速器的设计研究

离子注入是半导体器件制造中一项很重要的工艺,由于微电子工业对具有MeV级能量的离子注入的兴趣日益增长,对高能离子束的要求也日益迫切,此外,在某些应用中,需要有高达10~(18)离子/厘米~2的注入剂量,这就意谓着高能离子束必须具有大束流。对于高能、大束流这两项要求,射频linac(直线加速器)系统都可很好地满足。本文根据几种新型linac结构     

简讯

DWY—84A型离子注入与离子束混合两用机 由东北工学院物理系研制的DWY—84A型离子注入与离子束混合两用机(见外形照片),于今年6月12日至13日通过鉴定。该机主要用于非半导体材料的离子注入或真空镀膜—离子束混合,尤其适用于注入冶金学的应用研究和固体表面强化处理。在农业上可以对种子进行离子束辐照,促进其变异和遗传,改良品种,提高农作物产量。     

聚焦离子束装置

聚焦离子束(Focused Ion Beam)技术作为制作光集成电路及三维器件等最新的高性能半导体器件的手段之一,令人注目。特别是利用它进行离子注入是很有前途的。常规的离子注入法是先形成杂质气体的等离子区,从中引出离子,经加速后注入硅或砷化镓基片内,由于这种方式的离子束直径大,所以需用掩模来限制离子注入的区域。随着半导体器件的高集成化,电路图形越来越缩小,1M位以上的存储器其图形尺寸要求在1μm以下,用掩模的方法制出亚微米图形是比较困难的,而聚焦离子束技术可实现无掩模注入,从而成为一项重要的新工艺。     

透射电镜原位研究Ni纳米晶粒成核生长

离子注入能够精确地控制能量和剂量 ,能够注入几乎所有的元素 ,甚至同位素 ,而且注入离子形成的纳米晶粒镶嵌在衬底里 ,使得形成的纳米颗粒得到了很好的保护。近年来 ,离子注入绝缘衬底材料形成量子点结构成为研究的热点。随着离子注入技术和工艺的不断改善 ,该方法在工业应用中成本越来越低 ,相信会在今后的材料制备中得到更广泛的应用。本研究在法国核谱质谱中心 (ＣＮＳＮＭ)的离子注入机和透射电镜联机装置上进行[1] ,衬底材料是用电子束蒸发沉积而形成的非晶ＳｉＯ2 薄膜 ,厚度在 90～ 10 0ｎｍ。选取适当的注入能量使注入离子的投影射…     

Suppression of reverse biased diode leakage by MeV ion implantation

MeV Ion implantation has proven useful for many applications, such as latch-up suppression, SER reduction, and buried layer formation. MeV ion implantation can also be used to form a minority carrier diffusion barrier to reduce reverse bias diode leakage, particularly at high temperatures. The reduction in diode leakage has applications in DRAMs, CCDs, etc. The use of a MeV implanted diffusion barrier improves the ability to scale DRAM cell capacitance     

The electrical properties of zinc implanted GaAs

The electrical properties of zinc implanted GaAs have been measured as a function of ion dose, ion energy, implant temperature and annealing temperature and time using either evaporated aluminium layers or pyrolytically deposited Si₃N₄ as the encapsulant during annealing. The electrical profiles depend on all the above variables and thus profiles can be tailored by varying the relative magnitudes of these parameters. It is important to note that hole concentrations in excess of 1 × 10¹⁹ cm^?3 can be obtained following an anneal at temperatures as low as 650°C. Also, at the same annealing temperature, profile depths can be varied from 0.2 to about 1 μm by correct choice of implantation parameters. Aluminium coatings are acceptable for annealing temperatures up to 700°C but Si₃N₄ is required at higher temperatures.     

Analysis of high-power devices using proton beam induced currents

Ion beam induced charge microscopy (IBIC microscopy), a new technique which utilizes a focused beam of high energy (several MeV) protons, has been used to analyse various semiconductor structures, e.g. microelectronic circuits, radiation detectors, solar cells and CVD diamond thin films [1, 2]. Here we report the first attempt to investigate high power devices with this technique. It is demonstrated that IBIC analysis allows the characterisation of layers of different doping types located several tenths of microns below the sample surface using an ion beam energy of 2 MeV. The devices investigated are high-power light-triggered thyristors.     

离子注入技术在气敏材料上的应用

离子注入技术已被应用于气敏材料的开发研究，这是离子注入技术的一个较新的应用领域。本文介绍离子注入技术对气敏材料表面层组分、结构、电导率及气敏特性进行改性的研究进展。     

Ion implantation in semiconductors—Part I: Range distribution theory and experiments

Ion implantation in semiconductors provides a doping technique with several potential advantages over more conventional doping methods. Among the most important of these are: 1) the ability to introduce into a variety of substrates precise amounts of nearly any impurity element desired; 2) the ability to control doping profiles in three dimensions by modulating the energy, current, and position of the ion beam; and 3) the possibility of avoiding certain undesirable effects that accompany the high-temperature diffusion process. Ion implantation can also be used in conjunction with other fabrication techniques to produce device structures that no one process can produce simply by itself. Current research in the field is directed toward several problems that must be solved before the full impact of ion implantation on semiconductor technology can be soundly predicted. In particular, it is necessary to be able to predict the distribution profiles of the implanted ions accurately, to know which crystalline sites the implanted ions occupy, to know the nature of the damage centers that are introduced by the implantation process, and to determine the extent to which these defects can he removed by appropriate annealing procedures. Theoretical and experimental work pertinent to the problem of predicting impurity distribution profiles in ion-implanted material are reviewed here. A review of current research on the other problems listed will be given in Part II, together with the characteristics of a number of interesting semiconductor devices that have already been fabricated by ion implantation.     

Mosfet fabrication using ion beam nitridation

Ion beam nitridation has been suggested as an alternative to the conventional local oxidation process which is used in the fabrication of most metal-oxide-semiconductor (MOS) integrated circuits. The implantation of 2 keV nitrogen ions in doses of up to 8 x 10¹⁷ cm^-2 results in the formation of a silicon nitride layer approximately 10 nm thick. Herein we describe the electrical characteristics of n-channel silicon gate metal-oxide-semiconductor-field-effect-transistors (MOSFETs) fabricated using this modified local oxidation process, and compare them to devices fabricated simultaneously but using the conventional local oxidation technology. The effective device channel lengths and widths are determined from the electrical characteristics of devices with mask (ideal) dimensions of 4, 6, 8 or 10 μm. The ion beam nitrided devices exhibit a significant reduction in the lateral oxidation effect. A 1.3 μm increase in channel width relative to conventional processing is observed for the ion beam nitrided devices with a 690 mm thick field oxide. On the other hand, fixed oxide charge densities are found to increase by a factor of about two due to the nitrogen implantation, and device channel mobilities are reduced by about 25%.     

Effect of the annealing temperature on erbium ion electroluminescence in Si:(Er,O) diodes with (111) substrate orientation

The influence of the temperature of secondary annealing, stimulating the formation of optically and electrically active centers, on the erbium ion electroluminescence (EL) at λ≈1.54 μm in (111) Si:(Er,O) diodes has been studied. The diodes were fabricated by the implantation of 2.0 and 1.6 MeV erbium ions at doses of 3×10¹⁴ cm⁻² and oxygen ions (0.28 and 0.22 MeV, 3×10¹⁵ cm⁻²). At room temperature, the EL intensity in the breakdown mode grows with the annealing temperature increasing from 700 to 950°C. At annealing temperatures of 975–1100°C, no erbium EL is observed in the breakdown mode owing to the formation of microplasmas. The intensity of the injection EL at 80 K decreases with the annealing temperature increasing from 700 to 1100°C. __________ Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 10, 2001, pp. 1224–1227. Original Russian Text Copyright ? 2001 by Sobolev, Emel’yanov, Nikolaev.     

金属离子注入钢表面摩擦学特性及应用研究

着重介绍了改善钢表面摩察学特性的方法和提高离子束加工效率的途径。这项金属离子注入技术在工业生产发展中正发挥着重要的作用，并阐述了MEVVA离了注入新技术在工业化应用中的特点。     

New graphite liquid metal ion source geometry developed for corrosive metal. Application to an aluminium ion source

In this work we present a new patented graphite-based ion source geometry for corrosive metals, where the tip itself is the heating element. A specific treatment is applied to improve the wetability of the graphite surface. In the case of an Aluminium beam, experimental test results are presented concerning FIB micromachining, ion microscopy and FIB localised implantation.