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1.
Organometal halide perovskites are new light‐harvesting materials for lightweight and flexible optoelectronic devices due to their excellent optoelectronic properties and low‐temperature process capability. However, the preparation of high‐quality perovskite films on flexible substrates has still been a great challenge to date. Here, a novel vapor–solution method is developed to achieve uniform and pinhole‐free organometal halide perovskite films on flexible indium tin oxide/poly(ethylene terephthalate) substrates. Based on the as‐prepared high‐quality perovskite thin films, high‐performance flexible photodetectors (PDs) are constructed, which display a nR value of 81 A W?1 at a low working voltage of 1 V, three orders higher than that of previously reported flexible perovskite thin‐film PDs. In addition, these flexible PDs exhibit excellent flexural stability and durability under various bending situations with their optoelectronic performance well retained. This breakthrough on the growth of high‐quality perovskite thin films opens up a new avenue to develop high‐performance flexible optoelectronic devices.  相似文献   

2.
    
The combination of perovskite solar cells and quantum dot solar cells has significant potential due to the complementary nature of the two constituent materials. In this study, solar cells (SCs) with a hybrid CH3NH3PbI3/SnS quantum dots (QDs) absorber layer are fabricated by a facile and universal in situ crystallization method, enabling easy embedding of the QDs in perovskite layer. Compared with SCs based on CH3NH3PbI3, SCs using CH3NH3PbI3/SnS QDs hybrid films as absorber achieves a 25% enhancement in efficiency, giving rise to an efficiency of 16.8%. The performance improvement can be attributed to the improved crystallinity of the absorber, enhanced photo‐induced carriers' separation and transport within the absorber layer, and improved incident light utilization. The generality of the methods used in this work paves a universal pathway for preparing other perovskite/QDs hybrid materials and the synthesis of entire nontoxic perovskite/QDs hybrid structure.  相似文献   

3.
    
The best performing modern optoelectronic devices rely on single‐crystalline thin‐film (SC‐TF) semiconductors grown epitaxially. The emerging halide perovskites, which can be synthesized via low‐cost solution‐based methods, have achieved substantial success in various optoelectronic devices including solar cells, lasers, light‐emitting diodes, and photodetectors. However, to date, the performance of these perovskite devices based on polycrystalline thin‐film active layers lags behind the epitaxially grown semiconductor devices. Here, a photodetector based on SC‐TF perovskite active layer is reported with a record performance of a 50 million gain, 70 GHz gain‐bandwidth product, and a 100‐photon level detection limit at 180 Hz modulation bandwidth, which as far as we know are the highest values among all the reported perovskite photodetectors. The superior performance of the device originates from replacing polycrystalline thin film by a thickness‐optimized SC‐TF with much higher mobility and longer recombination time. The results indicate that high‐performance perovskite devices based on SC‐TF may become competitive in modern optoelectronics.  相似文献   

4.
    
In situ monitoring the healthy state of energy storage devices is a smart way to avoid severe accidents and major emergencies. Electrochromic supercapacitors (ECSCs) stand out among other devices owing to the smart color variation during charge and discharge processes. However, it is hard to obtain the precise state of charge via only identifying their color change. To address this problem, an integral system composed of the inorganic CsPbBr3 perovskite photodetector (PPD) and polyaniline (PANI)//WO3 ECSC is proposed here. The PPD can simultaneously collect the variation of responsive current (under a green laser with the wavelength of 520 nm) when the ECSC is being charged or discharged. The real‐time state of charge following the color change can be recorded by the PPDs constantly and accurately. A voltage alteration as small as 47.2 mV (charge variation of 0.33 mC) can be detected by this integral system rapidly, implying its great potential in managing the health condition of ECSC or even common energy storage devices in the future.  相似文献   

5.
    
Wide-bandgap perovskite solar cells (PSCs) have attracted a lot of attention due to their application in tandem solar cells. However, the open-circuit voltage (VOC) of wide-bandgap PSCs is dramatically limited by high defect density existing at the interface and bulk of the perovskite film. Here, an anti-solvent optimized adduct to control perovskite crystallization strategy that reduces nonradiative recombination and minimizes VOC deficit is proposed. Specifically, an organic solvent with similar dipole moment, isopropanol (IPA) is added into ethyl acetate (EA) anti-solvent, which is beneficial to form PbI2 adducts with better crystalline orientation and direct formation of α-phase perovskite. As a result, EA-IPA (7-1) based 1.67 eV PSCs deliver a power conversion efficiency of 20.06% and a VOC of 1.255 V, which is one of the remarkable values for wide-bandgap around 1.67 eV. The findings provide an effective strategy for controlling crystallization to reduce defect density in PSCs.  相似文献   

6.
    
Perovskite photodetectors (PDs) with tunable detection wavelength have attracted extensive attention due to the potential application in the field of imaging, machine vision, and artificial intelligence. Most of the perovskite PDs focus on I‐ or Br‐based materials due to their easy preparation techniques. However, their main photodetection capacity is situated in the visible region because of their narrower bandgap. Cl‐based wide bandgap perovskites, such as CsPbCl3, are scarcely reported because of the bad film quality of the spin‐coated Cl‐based perovskite, due to the poor solubility of the precursor. Therefore, ultraviolet detection using high‐quality full inorganic perovskite films, especially with high thermal stability of materials and devices, is still a big challenge. In this work, high‐quality single crystal CsPbCl3 microplatelets (MPs) synthesized by a simple space‐confined growth method at low temperature for near‐ultraviolet (NUV) PDs are reported. The single CsPbCl3 MP PDs demonstrate a decent response to NUV light with a high on/off ratio of 5.6 × 103 and a responsivity of 0.45 A W?1 at 5 V. In addition, the dark current is as low as pA level, leading to detectivity up to 1011 Jones. Moreover, PDs possess good stability and repeatability.  相似文献   

7.
The laser‐assisted hydrothermal growth kinetics of a cluster of ZnO nanowires are studied based on optical in situ growth monitoring. The growth yields are orders of magnitude higher than those of conventional hydrothermal methods that use bulk heating. This remarkable improvement is attributed to suppression of precursor depletion occurring by homogeneous growth reactions, as well as to enhanced mass transport. The obtained in situ data show gradually decaying growth kinetics even with negligible precursor consumption. It is revealed that the growth deceleration is caused by thermal deactivation resulting from heat dissipation through the growing nanowires. Finally, it is demonstrated that the tailored temporal modulation of the input power enables sustained growth to extended dimensions. These results provide a key to highly efficient use of growth precursors that has been pursued for industrial use of this functional metal oxide semiconductor.  相似文献   

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9.
    
The future electronic application of graphene highly relies on the production of large‐area high‐quality single‐crystal graphene. However, the growth of single‐crystal graphene on different substrates via either single nucleation or seamless stitching is carried out at a temperature of 1000 °C or higher. The usage of this high temperature generates a variety of problems, including complexity of operation, higher contamination, metal evaporation, and wrinkles owing to the mismatch of thermal expansion coefficients between the substrate and graphene. Here, a new approach for the fabrication of ultraflat single‐crystal graphene using Cu/Ni (111)/sapphire wafers at lower temperature is reported. It is found that the temperature of epitaxial growth of graphene using Cu/Ni (111) can be reduced to 750 °C, much lower than that of earlier reports on catalytic surfaces. Devices made of graphene grown at 750 °C have a carrier mobility up to ≈9700 cm2 V?1 s?1 at room temperature. This work shines light on a way toward a much lower temperature growth of high‐quality graphene in single crystallinity, which could benefit future electronic applications.  相似文献   

10.
    
By fine‐tuning the crystal nucleation and growth process, a low‐temperature‐gradient crystallization method is developed to fabricate high‐quality perovskite CH3NH3PbBr3 single crystals with high carrier mobility of 81 ± 5 cm2 V?1 s?1 (>3 times larger than their thin film counterpart), long carrier lifetime of 899 ± 127 ns (>5 times larger than their thin film counterpart), and ultralow trap state density of 6.2 ± 2.7 × 109 cm?3 (even four orders of magnitude lower than that of single‐crystalline silicon wafers). In fact, they are better than perovskite single crystals reported in prior work: their application in photosensors gives superior detectivity as high as 6 × 1013 Jones, ≈10–100 times better than commercial sensors made of silicon and InGaAs. Meanwhile, the response speed is as fast as 40 µs, ≈3 orders of magnitude faster than their thin film devices. A large‐area (≈1300 mm2) imaging assembly composed of a 729‐pixel sensor array is further designed and constructed, showing excellent imaging capability thanks to its superior quality and uniformity. This opens a new possibility to use the high‐quality perovskite single‐crystal‐based devices for more advanced imaging sensors.  相似文献   

11.
    
Mixed perovskites have achieved substantial successes in boosting solar cell efficiency, but the complicated perovskite crystal formation pathway remains mysterious. Here, the detailed crystallization process of mixed perovskites (FA0.83MA0.17Pb(I0.83Br0.17)3) during spin‐coating is revealed by in situ grazing‐incidence wide‐angle X‐ray scattering measurements, and three phase‐formation stages are identified: I) precursor solution; II) hexagonal δ‐phase (2H); and III) complex phases including hexagonal polytypes (4H, 6H), MAI–PbI2–DMSO intermediate phases, and perovskite α‐phase. The correlated device performance and ex situ characterizations suggest the existence of an “annealing window” covering the duration of stage II. The spin‐coated film should be annealed within the annealing window to avoid the formation of hexagonal polytypes during the perovskite crystallization process, thus achieving a good device performance. Remarkably, the crystallization pathway can be manipulated by incorporating Cs+ ions in mixed perovskites. Combined with density functional theory calculations, the perovskite system with sufficient Cs+ will bypass the formation of secondary phases in stage III by promoting the formation of α‐phase both kinetically and thermodynamically, thereby significantly extending the annealing window. This study provides underlying reasons of the time sensitivity of fabricating mixed‐perovskite devices and insightful guidelines for manipulating the perovskite crystallization pathways toward higher performance.  相似文献   

12.
印刷钙钛矿太阳能电池采用无机介孔骨架包覆有机无机杂化钙钛矿材料的器件结构,制备工艺简单,原材料成本低廉,且稳定性优异.然而,在介孔骨架中均匀沉积高质量的钙钛矿材料存在一定困难.本研究通过在典型钙钛矿材料甲胺铅碘(MAPbI3)前驱液中引入醋酸铅(Pb(Ac)2)作为添加剂,加快钙钛矿晶体的成核从而改善其在介孔骨架中的生...  相似文献   

13.
    
Controlling the crystallization to achieve high-quality homogeneous perovskite film is the key strategy in developing perovskite electronic devices. Here, an in situ dynamic optical probing technique is demonstrated that can monitor the fast crystallization of perovskites and effectively minimize the influence of laser excitation during the measurement. This study finds that the typical static probing technique would damage and induce phase segregation in the perovskite films during the excitation. These issues can be effectively resolved with the dynamic probing approach. It also found that the crystallization between MAPbI3 and MAPbI2Br is strikingly different. In particular, MAPbI2Br suffers from inefficient nucleation during the spin-coating that strongly affects the uniform crystal growth in the annealing process. The commonly used pre-heating process is found at a lower temperature not only can further promote the nucleation but also to complete the crystallization of MAPbI2Br. The role of further annealing at a higher temperature is to facilitate ion-dissociation on the crystal surface to form a passivation layer to stabilize the MAPbI2Br lattices. The device performance is strongly correlated with the film formation mechanism derived from the in situ results. This work demonstrates that the in situ technique can provide deep insight into the crystallization mechanism, and help to understand the growth mechanism of perovskites with different compositions and dimensionalities.  相似文献   

14.
    
Ternary‐oxide nanostructures are the most investigated as promising candidates for ultraviolet (UV) photodetectors (PDs) due to composition tunable bandgap and better photoconductivity. However, the assembled film–based UV PDs generally exhibit poor response speed because the internal defects of nanostructures and the discontinuity of assembled film obstruct transport of charges. Herein, a single‐crystal Zn2SnO4 (ZTO) nanocrystal (NC)–assembled film UV photodetector is reported, improving the response speed several tens of times (τrise ≈ 0.2 ms, τdecay ≈ 0.43 ms). The Ilight/Idark ratio of the UV PD is over 103. The ZTO NCs, with the bandgap of 3.9 eV, are prepared by laser ablation in liquid combined with hydrothermal reaction. The combination and dissociation of Zn–Sn–O ternary oxide are investigated to guarantee that single‐crystal ZTO NCs have high purity, clean surface, high specific surface area. Moreover, the NC‐assembled film is highly compact and continuous, which outperforms the conventional 1D nanostructures. This work provides a reliable novel approach to greatly improve the performances of UV PDs.  相似文献   

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16.
    
A simple, low‐cost, large area, and continuous scalable coating method is proposed for the fabrication of hybrid organic–inorganic perovskite solar cells. A megasonic spray‐coating method utilizing a 1.7 MHz megasonic nebulizer that could fabricate reproducible large‐area planar efficient perovskite films is developed. The coating method fabricates uniform large‐area perovskite film with large‐sized grain since smaller and narrower sized mist droplets than those generated by existing ultrasonic spray methods could be generated by megasonic spraying. The volume flow rate of the CH3NH3PbI3 precursor solution and the reaction temperature are controlled, to obtain a high quality perovskite active layer. The devices reach a maximum efficiency of 16.9%, with an average efficiency of 16.4% from 21 samples. The applicability of megasonic spray coating to the fabrication of large‐area solar cells (1 cm2), with a power conversion efficiency of 14.2%, is also demonstrated. This is a record high efficiency for large‐area perovskite solar cells fabricated by continuous spray coating.  相似文献   

17.
    
Vapor‐based deposition technique is considered as a promising approach for preparing a high‐quality and uniform perovskite thin film. With evolution from coevaporation deposition to a low‐pressure vapor‐assisted solution process, both energy budget and reaction yield for perovskite film fabrications are improved. In this paper, a low‐pressure hybrid chemical vapor deposition (LPHCVD) method is applied to fabricate CH3NH3PbI3 perovskite films. The crucial dependence of working pressure on the perovskite formation is revealed. Moreover, the reaction time plays an important role in controlling the quality of the synthesized perovskite film. Efficient perovskite solar cells of 14.99% (mesoscopic), 15.37% (planar), and perovskite modules (active area of 8.4 cm2) of 6.22% are achieved by this LPHCVD method.  相似文献   

18.
    
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19.
    
Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier‐transportation barriers, and foreign impurities (Au) with deep‐energy levels can form carrier traps and nonradiative recombination centers. Here, self‐catalyzed p‐type GaAs nanowires (NWs) with a pure zinc blende (ZB) structure are first developed, and then a photodetector made from these NWs is fabricated. Due to the absence of stacking faults and suppression of large amount of defects with deep energy levels, the photodetector exhibits room‐temperature high photoresponsivity of 1.45 × 105 A W?1 and excellent specific detectivity (D*) up to 1.48 × 1014 Jones for a low‐intensity light signal of wavelength 632.8 nm, which outperforms previously reported NW‐based photodetectors. These results demonstrate these self‐catalyzed pure‐ZB GaAs NWs to be promising candidates for optoelectronics applications.  相似文献   

20.
    
The critical requirement for ambient-printed formamidinium lead iodide (FAPbI3) lies in the control of nucleation–growth kinetics and defect formation behavior, which are extensively influenced by interactions between the solvent and perovskite. Here, a strategy is developed that combines a cosolvent and an additive to efficiently tailor the coordination between the solvent and perovskite. Through in situ characterizations, the direct crystallization from the sol–gel phase to α-FAPbI3 is illustrated. When the solvent exhibits strong interactions with the perovskite, the sol–gel phases cannot effectively transform into α-FAPbI3, resulting in a lower nucleation rate and confined crystal growth directions. Consequently, it becomes challenging to fabricate high-quality void-free perovskite films. Conversely, weaker solvent–perovskite coordination promotes direct crystallization from sol–gel phases to α-FAPbI3. This process exhibits more balanced nucleation–growth kinetics and restrains the formation of defects and microstrains in situ. This strategy leads to improved structural and optoelectronic properties within the FAPbI3 films, characterized by more compact grain stacking, smoother surface morphology, released lattice strain, and fewer defects. The ambient-printed FAPbI3 perovskite solar cells fabricated using this strategy exhibit a remarkable power conversion efficiency of 24%, with significantly reduced efficiency deviation and negligible decreases in the stabilized output.  相似文献   

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