Enhanced Performance of Fullerene n‐Channel Field‐Effect Transistors with Titanium Sub‐Oxide Injection Layer

Enhanced performance of n‐channel organic field‐effect transistors (OFETs) is demonstrated by introducing a titanium sub‐oxide (TiO_x) injection layer. The n‐channel OFETs utilize [6,6]‐phenyl‐C₆₁ butyric acid methyl ester (PC₆₁BM) or [6,6]‐phenyl‐C₇₁ butyric acid methyl ester (PC₇₁BM) as the semiconductor in the channel. With the TiO_x injection layer, the electron mobilities of PC₆₁BM and PC₇₁BM FET using Al as source/drain electrodes are comparable to those obtained from OFETs using Ca as the source/drain electrodes. Direct measurement of contact resistance (R_c) shows significantly decreased R_c values for FETs with the TiO_x layer. Ultraviolet photoelectron spectroscopy (UPS) studies demonstrate that the TiO_x layer reduces the electron injection barrier because of the relatively strong interfacial dipole of TiO_x. In addition to functioning as an electron injection layer that eliminates the contact resistance, the TiO_x layer acts as a passivation layer that prevents penetration of O₂ and H₂O; devices with the TiO_x injection layer exhibit a significant improvement in lifetime when exposed to air.     

n‐Doping of a Low‐Electron‐Affinity Polymer Used as an Electron‐Transport Layer in Organic Light‐Emitting Diodes

n‐Doping electron‐transport layers (ETLs) increases their conductivity and improves electron injection into organic light‐emitting diodes (OLEDs). Because of the low electron affinity and large bandgaps of ETLs used in green and blue OLEDs, n‐doping has been notoriously more difficult for these materials. In this work, n‐doping of the polymer poly[(9,9‐dioctylfluorene‐2,7‐diyl)‐alt‐(benzo[2,1,3]thiadiazol‐4,7‐diyl)] (F8BT) is demonstrated via solution processing, using the air‐stable n‐dopant (pentamethylcyclopentadienyl)(1,3,5‐trimethylbenzene)ruthenium dimer [RuCp*Mes]₂. Undoped and doped F8BT films are characterized using ultraviolet and inverse photoelectron spectroscopy. The ionization energy and electron affinity of the undoped F8BT are found to be 5.8 and 2.8 eV, respectively. Upon doping F8BT with [RuCp*Mes]₂, the Fermi level shifts to within 0.25 eV of the F8BT lowest unoccupied molecular orbital, which is indicative of n‐doping. Conductivity measurements reveal a four orders of magnitude increase in the conductivity upon doping and irradiation with ultraviolet light. The [RuCp*Mes]₂‐doped F8BT films are incorporated as an ETL into phosphorescent green OLEDs, and the luminance is improved by three orders of magnitude when compared to identical devices with an undoped F8BT ETL.     

Morphological Stabilization by Supramolecular Perfluorophenyl‐C60 Interactions Leading to Efficient and Thermally Stable Organic Photovoltaics

A new PC₆₁BM‐based fullerene, [6,6]‐phenyl‐C₆₁ butyric acid pentafluorophenyl ester (PC₆₁BP^F) is designed and synthesized. This new n‐type material can replace PC₆₁BM to form a P3HT:PC₆₁BP^F binary blend or serve as an additive to form a P3HT:PC₆₁BM:PC₆₁BP^F ternary blend. Supramolecular attraction between the pentafluorophenyl group of PC₆₁BP^F and the C₆₀ cores of PC₆₁BP^F/PC₆₁BM can effectively suppress the PC₆₁BP^F/PC₆₁BM materials from severe aggregation. By doping only 8.3 wt% PC₆₁BP^F, device PC₆₁BP^F651 exhibits a PCE of 3.88% and decreases slightly to 3.68% after heating for 25 h, preserving 95% of its original value. When PC₆₁BP with non‐fluorinated phenyl group is used to substitute PC₆₁BP^F, the stabilizing ability disappears completely. The efficiencies of PC₆₁BP651 and PC₆₁BP321 devices significantly decay to 0.44% and 0.11%, respectively, after 25 h isothermal heating. Most significantly, this strategy is demonstrated to be effective for a blend system incorporating a low band‐gap polymer. By adding only 10 wt% PC₆₁BP^F, the PDTBCDTB: PC₇₁BM‐based device exhibits thermally stable morphology and device characteristics. These findings demonstrate that smart utilization of supramolecular interactions is an effective and practical strategy to control morphological evolution.     

Photoinduced Hole Transfer Becomes Suppressed with Diminished Driving Force in Polymer‐Fullerene Solar Cells While Electron Transfer Remains Active

Device performance and photoinduced charge transfer are studied in donor/acceptor blends of the oxidation‐resistant conjugated polymer poly[(4,8‐bis(2‐hexyldecyl)oxy)benzo[1,2‐b:4,5‐b′]dithiophene)‐2,6‐diyl‐alt‐(2,5‐bis(3‐dodecylthiophen‐2‐yl)benzo[1,2‐d;4,5‐d′]bisthiazole)] (PBTHDDT) with the following fullerene acceptors: [6,6]‐phenyl‐C₇₁‐butyric acid methyl ester (PC₇₁BM); [6,6]‐phenyl‐C₆₁‐butyric acid methyl ester (PC₆₁BM); and the indene‐C₆₀ bis‐adduct IC₆₀BA). Power conversion efficiency improves from 1.52% in IC₆₀BA‐based solar cells to 3.75% in PC₇₁BM‐based devices. Photoinduced absorption (PIA) of the PBTHDDT:fullerene blends suggests that exciting the donor polymer leads to long‐lived positive polarons on the polymer and negative polarons on the fullerene in all three polymer fullerene blends. Selective excitation of the fullerene in PC₇₁BM or PC₆₁BM blends also generates long‐lived polarons. In contrast, no discernible PIA features are observed when selectively exciting the fullerene in a PBTHDDT/IC₆₀BA blend. A relatively small driving force of ca. 70 meV appears to sustain charge separation via photoinduced hole transfer from photoexcited PC₆₁BM to the polymer. The decreased driving force for photoinduced hole transfer in the IC₆₀BA blend effectively turns off hole transfer from IC₆₀BA excitons to the host polymer, even while electron transfer from the polymer to the IC₆₀BA remains active. Suppressed hole transfer from fullerene excitons is a potentially important consideration for materials design and device engineering of organic solar cells.     

Solution Processable Fluorenyl Hexa‐peri‐hexabenzocoronenes in Organic Field‐Effect Transistors and Solar Cells

The organization of organic semiconductor molecules in the active layer of organic electronic devices has important consequences to overall device performance. This is due to the fact that molecular organization directly affects charge carrier mobility of the material. Organic field‐effect transistor (OFET) performance is driven by high charge carrier mobility while bulk heterojunction (BHJ) solar cells require balanced hole and electron transport. By investigating the properties and device performance of three structural variations of the fluorenyl hexa‐peri‐hexabenzocoronene (FHBC) material, the importance of molecular organization to device performance was highlighted. It is clear from ¹H NMR and 2D wide‐angle X‐ray scattering (2D WAXS) experiments that the sterically demanding 9,9‐dioctylfluorene groups are preventing π–π intermolecular contact in the hexakis‐substituted FHBC 4 . For bis‐substituted FHBC compounds 5 and 6 , π–π intermolecular contact was observed in solution and hexagonal columnar ordering was observed in solid state. Furthermore, in atomic force microscopy (AFM) experiments, nanoscale phase separation was observed in thin films of FHBC and [6,6]‐phenyl‐C61‐butyric acid methyl ester (PC₆₁BM) blends. The differences in molecular and bulk structural features were found to correlate with OFET and BHJ solar cell performance. Poor OFET and BHJ solar cells devices were obtained for FHBC compound 4 while compounds 5 and 6 gave excellent devices. In particular, the field‐effect mobility of FHBC 6 , deposited by spin‐casting, reached 2.8 × 10^?3 cm² V^?1 s and a power conversion efficiency of 1.5% was recorded for the BHJ solar cell containing FHBC 6 and PC₆₁BM.     

Impact of the Nature of the Side‐Chains on the Polymer‐Fullerene Packing in the Mixed Regions of Bulk Heterojunction Solar Cells

Polymer‐fullerene packing in mixed regions of a bulk heterojunction solar cell is expected to play a major role in exciton‐dissociation, charge‐separation, and charge‐recombination processes. Here, molecular dynamics simulations are combined with density functional theory calculations to examine the impact of nature and location of polymer side‐chains on the polymer‐fullerene packing in mixed regions. The focus is on poly‐benzo[1,2‐b:4,5‐b′]dithiophene‐thieno[3,4‐c]pyrrole‐4,6‐dione (PBDTTPD) as electron‐donating material and [6,6]‐phenyl‐C₆₁‐butyric acid methyl ester (PC₆₁BM) as electron‐accepting material. Three polymer side‐chain patterns are considered: i) linear side‐chains on both benzodithiophene (BDT) and thienopyrroledione (TPD) moieties; ii) two linear side‐chains on BDT and a branched side‐chain on TPD; and iii) two branched side‐chains on BDT and a linear side‐chain on TPD. Increasing the number of branched side‐chains is found to decrease the polymer packing density and thereby to enhance PBDTTPD–PC₆₁ BM mixing. The nature and location of side‐chains are found to play a determining role in the probability of finding PC₆₁BM molecules close to either BDT or TPD. The electronic couplings relevant for the exciton‐dissociation and charge‐recombination processes are also evaluated. Overall, the findings are consistent with the experimental evolution of the PBDTTPD–PC₆₁BM solar‐cell performance as a function of side‐chain patterns.     

Improved Thermal Stability of Polymer Solar Cells by Incorporating Porphyrins

Thermal stability has been the important issue in organic solar cell, especially for the large scale fabrication and application in the future. In this work, a new strategy involving the introduction of porphyrin compound (BL) is proposed to prevent the [6,6]‐phenyl C61 butyric acid methyl ester (PC₆₁BM) aggregation. The supramolecular interactions between PC₆₁BM and BL are first demonstrated in PC₆₁BM:BL binary blend, and then the effect of BL on P3HT:PC₆₁BM blend is qualitatively and quantitatively studied by differential scanning calorimetry, UV–vis absorption spectroscopy, atomic force microscopy, optical microscopy, and fluorescence techniques. It is found that the BL addition not only stabilizes the morphology of P3HT:PC₆₁BM blend films, but also shows a good ability to maintain the electron mobility by depressing the PC₆₁BM crystallization. And the thermal stability of the devices based on P3HT:PC₆₁BM:BL ternary blend films is therefore greatly improved. For example, 8 wt% BL doping drops the power conversion efficiency by 10.5% relative to its peak value after 48 h of annealing at 130 °C, while 71.5% of decrease is obtained for the device without BL after only 3 h of annealing. This strategy is preliminarily proved to be universal and will show great potentials in future commercialization of polymer solar cells.     

Donor and Acceptor Unit Sequences Influence Material Performance in Benzo[1,2‐b:4,5‐b′]dithiophene–6,7‐Difluoroquinoxaline Small Molecule Donors for BHJ Solar Cells

Well‐defined small molecule (SM) donors can be used as alternatives to π‐conjugated polymers in bulk‐heterojunction (BHJ) solar cells with fullerene acceptors (e.g., PC₆₁/₇₁BM). Taking advantage of their synthetic tunability, combinations of various donor and acceptor motifs can lead to a wide range of optical, electronic, and self‐assembling properties that, in turn, may impact material performance in BHJ solar cells. In this report, it is shown that changing the sequence of donor and acceptor units along the π‐extended backbone of benzo[1,2‐b:4,5‐b′]dithiophene–6,7‐difluoroquinoxaline SM donors critically impacts (i) molecular packing, (ii) propensity to order and preferential aggregate orientations in thin‐films, and (iii) charge transport in BHJ solar cells. In these systems ( SM1‐3 ), it is found that 6,7‐difluoroquinoxaline ([2F]Q) motifs directly appended to the central benzo[1,2‐b:4,5‐b′]dithiophene (BDT) unit yield a lower‐bandgap analogue ( SM1 ) with favorable molecular packing and aggregation patterns in thin films, and optimized BHJ solar cell efficiencies of ≈6.6%. ¹H‐¹H DQ‐SQ NMR analyses indicate that SM1 and its counterpart with [2F]Q motifs substituted as end‐group SM3 possess distinct self‐assembly patterns, correlating with the significant charge transport and BHJ device efficiency differences observed for the two analogous SM donors (avg. 6.3% vs 2.0%, respectively).     

High‐Yield Synthesis and Electrochemical and Photovoltaic Properties of Indene‐C70 Bisadduct

[6, 6]‐Phenyl‐C₆₁‐butyric acid methyl ester (PC₆₀BM) is the widely used acceptor material in polymer solar cells (PSCs). Nevertheless, the low LUMO energy level and weak absorption in visible region are its two weak points. For enhancing the solar light harvest, the soluble C₇₀ derivative PC₇₀BM has been used as acceptor instead of PC₆₀BM in high efficiency PSCs in recent years. But, the LUMO level of PC₇₀BM is the same as that of PC₆₀BM, which is too low for the PSCs based on the polymer donors with higher HOMO level, such as poly (3‐hexylthiophene) (P3HT). Here, a new soluble C₇₀ derivative, indene‐C₇₀ bisadduct (IC₇₀BA), is synthesized with high yield of 58% by a one‐pot reaction of indene and C₇₀ at 180 °C for 72 h. The electrochemical properties and electronic energy levels of the fullerene derivatives are measured by cyclic voltammetry. The LUMO energy level of IC₇₀BA is 0.19 eV higher than that of PC₇₀BM. The PSC based on P3HT with IC₇₀BA as acceptor shows a higher V_oc of 0.84 V and higher power conversion efficiency (PCE) of 5.64%, while the PSC based on P3HT/PC₆₀BM and P3HT/PC₇₀BM displays V_oc of 0.59 V and 0.58 V, and PCE of 3.55% and 3.96%, respectively, under the illumination of AM1.5G, 100 mW cm^?2. The results indicate that IC₇₀BA is an excellent acceptor for the P3HT‐based PSCs and could be a promising new acceptor instead of PC₇₀BM for the high performance PSCs based on narrow bandgap conjugated polymer donor.     

Passivation of Molecular n‐Doping: Exploring the Limits of Air Stability

Molecular doping is a key technique for flexible and low‐cost organic complementary semiconductor technologies that requires both efficient and stable p‐ and n‐type doping. However, in contrast to molecular p‐dopants, highly efficient n‐type dopants are commonly sensitive to rapid degradation in air due to their low ionization energies (IEs) required for electron donation, e.g., IE = 2.4 eV for tetrakis(1,3,4,6,7,8‐hexahydro‐2H‐pyrimido[1,2‐a]pyrimidinato)ditungsten(II) (W₂(hpp)₄). Here, the air stability of various host:W₂(hpp)₄ combinations is compared by conductivity measurements and photoemission spectroscopy. A partial passivation of the n‐doping against degradation is found, with this effect identified to depend on the specific energy levels of the host material. Since host‐W₂(hpp)₄ electronic wavefunction hybridization is unlikely due to confinement of the dopant highest occupied molecular orbital (HOMO) to its molecular center, this finding is explained via stabilization of the dopant by single‐electron transfer to a host material whose energy levels are sufficiently low for avoiding further charge transfer to oxygen–water complexes. Our results show the feasibility of temporarily handling n‐doped organic thin films in air, e.g., during structuring of organic field effect transistors (OFETs) by lithography.     

In‐Situ Monitoring of the Solid‐State Microstructure Evolution of Polymer:Fullerene Blend Films Using Field‐Effect Transistors

Organic field‐effect transistors (OFETs) are used to investigate the evolution of the solid‐state microstructure of blends of poly(3‐hexylthiophene) (P3HT) and [6,6]‐phenyl C₆₁‐butyric acid methyl ester (PC₆₁BM) upon annealing. Changes in the measured field‐effect mobility of holes and electrons are shown to reveal relevant information about the phase‐segregation in this system, which are in agreement with a eutectic phase behavior. Using dual‐gate OFETs and in‐situ measurements, it is demonstrated that the spatial‐ and time‐dependence of microstructural changes in such polymer:fullerene blend films can also be probed. A percolation‐theory‐based simulation is carried out to illustrate how phase‐segregation in this system is expected to lead to a substantial decrease in the electron conductivity in an OFET channel, in qualitative agreement with experimental results.     

Synthesis of a Modified PC70BM and Its Application as an Electron Acceptor with Poly(3‐hexylthiophene) as an Electron Donor for Efficient Bulk Heterojunction Solar Cells

A simple and effective modification of phenyl‐C₇₀‐butyric acid methyl ester (PC₇₀BM) is carried out in a single step after which the material is used as electron acceptor for bulk heterojunction polymer solar cells (PSCs). The modified PC₇₀BM, namely CN‐PC₇₀BM, showed broader and stronger absorption in the visible region (350–550 nm) of the solar spectrum than PC₇₀BM because of the presence of a cyanovinylene 4‐nitrophenyl segment. The lowest unoccupied molecular energy level (LUMO) of CN‐PC₇₀BM is higher than that of PC₇₀BM by 0.15 eV. The PSC based on the blend (cast from tetrahydrofuran (THF) solution) consists of P3HT as the electron donor and CN‐PC₇₀BM as the electron acceptor and shows a power conversion efficiency (PCE) of 4.88%, which is higher than that of devices based on PC₇₀BM as the electron acceptor (3.23%). The higher PCE of the solar cell based on P3HT:CN‐PC₇₀BM is related to the increase in both the short circuit current (J_sc) and the open circuit voltage (V_oc). The increase in J_sc is related to the stronger light absorption of CN‐PC₇₀BM in the visible region of the solar spectrum as compared to that of PC₇₀BM. In other words, more excitons are generated in the bulk heterojunction (BHJ) active layer. On the other hand, the higher difference between the LUMO of CN‐PC₇₀BM and the HOMO of P3HT causes an enhancement in the V_oc. The addition of 2% (v/v) 1‐chloronapthalene (CN) to the THF solvent during film deposition results in an overall improvement of the PCE up to 5.83%. This improvement in PCE can be attributed to the enhanced crystallinity of the blend (particularly of P3HT) and more balanced charge transport in the device.     

Fullerene Adducts Bearing Cyano Moiety for Both High Dielectric Constant and Good Active Layer Morphology of Organic Photovoltaics

Power conversion efficiency (PCE) of organic photovoltaics (OPVs) lags behind of inorganic photovoltaics due to low dielectric constants (ε _r) of organic semiconductors. Although OPVs with high ε _r are attractive in theory, practical demonstration of efficient OPV devices with high‐ε _r materials is in its infancy. This is largely due to the contradiction between the requirements of high ε _r and good donor:acceptor blend morphology in the bulk heterojunction. Herein, a series of fullerene acceptors is reported bearing a polar cyano moiety for both high ε _r and good donor:acceptor blend morphology. These cyano‐functionalized acceptors (ε _r = 4.9) have higher ε _r than that of the widely used acceptor, [6,6]‐phenyl‐C₆₁‐butyric acid methyl ester (PC₆₁BM) (ε _r = 3.9). The high ε _r is realized without decrease of electron mobility and change of the lowest unoccupied molecular orbital/highest occupied molecular orbital (LUMO/HOMO) energy levels. Although the cyano‐functionalized acceptors have increased polarity, they still exhibit good compatibility with the typical donor polymer. Polymer solar cells based on the cyano‐functionalized acceptors exhibit good active layer morphology and show better device performance (PCE = 5.55%) than that of PC₆₁BM (PCE = 4.56%).     

Incorporating Graphitic Carbon Nitride (g‐C3N4) Quantum Dots into Bulk‐Heterojunction Polymer Solar Cells Leads to Efficiency Enhancement

Graphitic carbon nitride (g‐C₃N₄) has been commonly used as photocatalyst with promising applications in visible‐light photocatalytic water‐splitting. Rare studies are reported in applying g‐C₃N₄ in polymer solar cells. Here g‐C₃N₄ is applied in bulk heterojunction (BHJ) polymer solar cells (PSCs) for the first time by doping solution‐processable g‐C₃N₄ quantum dots (C₃N₄ QDs) in the active layer, leading to a dramatic efficiency enhancement. Upon C₃N₄ QDs doping, power conversion efficiencies (PCEs) of the inverted BHJ‐PSC devices based on different active layers including poly(3‐hexylthiophene‐2,5‐diyl):[6,6]‐phenyl‐C61‐butyric acid methyl ester (P3HT:PC₆₁BM), poly(4,8‐bis‐alkyloxybenzo(l,2‐b:4,5‐b′)dithiophene‐2,6‐diylalt‐(alkyl thieno(3,4‐b)thiophene‐2‐carboxylate)‐2,6‐diyl):[6,6]‐phenyl C₇₁‐butyric acid methyl ester (PBDTTT‐C:PC₇₁BM), and poly[4,8‐bis(5‐(2‐ethylhexyl)thiophen‐2‐yl)benzo[1,2‐b:4,5‐b′]dithiophene‐co‐3‐fluorothieno [3,4‐b]thiophene‐2‐carboxylate] (PTB7‐Th):PC₇₁BM reach 4.23%, 6.36%, and 9.18%, which are enhanced by ≈17.5%, 11.6%, and 11.8%, respectively, compared to that of the reference (undoped) devices. The PCE enhancement of the C₃N₄ QDs doped BHJ‐PSC device is found to be primarily attributed to the increase of short‐circuit current (J_sc), and this is confirmed by external quantum efficiency (EQE) measurements. The effects of C₃N₄ QDs on the surface morphology, optical absorption and photoluminescence (PL) properties of the active layer film as well as the charge transport property of the device are investigated, revealing that the efficiency enhancement of the BHJ‐PSC devices upon C₃N₄ QDs doping is due to the conjunct effects including the improved interfacial contact between the active layer and the hole transport layer due to the increase of the roughness of the active layer film, the facilitated photoinduced electron transfer from the conducting polymer donor to fullerene acceptor, the improved conductivity of the active layer, and the improved charge (hole and electron) transport.     

Highly Efficient p‐i‐n and Tandem Organic Light‐Emitting Devices Using an Air‐Stable and Low‐Temperature‐Evaporable Metal Azide as an n‐Dopant

Cesium azide (CsN₃) is employed as a novel n‐dopant because of its air stability and low deposition temperature. CsN₃ is easily co‐deposited with the electron transporting materials in an organic molecular beam deposition chamber so that it works well as an n‐dopant in the electron transport layer because its evaporation temperature is similar to that of common organic materials. The driving voltage of the p‐i‐n device with the CsN₃‐doped n‐type layer and a MoO₃‐doped p‐type layer is greatly reduced, and this device exhibits a very high power efficiency (57 lm W^?1). Additionally, an n‐doping mechanism study reveals that CsN₃ was decomposed into Cs and N₂ during the evaporation. The charge injection mechanism was investigated using transient electroluminescence and capacitance–voltage measurements. A very highly efficient tandem organic light‐emitting diodes (OLED; 84 cd A^?1) is also created using an n–p junction that is composed of the CsN₃‐doped n‐type organic layer/MoO₃ p‐type inorganic layer as the interconnecting unit. This work demonstrates that an air‐stable and low‐temperature‐evaporable inorganic n‐dopant can very effectively enhance the device performance in p‐i‐n and tandem OLEDs, as well as simplify the material handling for the vacuum deposition process.     

A universal roll‐to‐roll slot‐die coating approach towards high‐efficiency organic photovoltaics

This work develops a combinational use of solvent additive and in‐line drying oven on the flexible organic photovoltaics to improve large‐area roll‐to‐roll (R2R) slot‐die coating process. Herein, addition of 1,8‐diiodooctane (DIO) in the photoactive layer is conducted to yield a performance of 3.05% based on the blending of poly(3‐hexylthiophene) (P3HT) and [6,6]‐phenyl C₆₁‐butyric acid methyl ester (PC₆₁BM), and a very promising device performance of 7.32% based on the blending of poly[[4,8‐bis[(2‐ethylhexyl)oxy] benzo[1,2‐b:4,5‐b’] dithiophene‐2,6‐diyl] [3‐fluoro‐2‐[(2‐ethylhexyl)carbonyl]thieno[3,4‐b]thiophenediyl]] (PTB7) and [6,6]‐phenyl C₇₁‐butyric acid methyl ester (PC₇₁BM). Based on this R2R slot‐die coating approach for various polymers, we demonstrate the high‐performance result with respect to the up‐scaling from small high‐PCE cell to large‐area module. This present study provides a route for fabricating a low‐cost, large‐area, and environmental‐friendly flexible organic photovoltaics.     

A Solution‐Processed MoOx Anode Interlayer for Use within Organic Photovoltaic Devices

A simple, solution‐processed route to the development of MoO_x thin‐films using oxomolybdate precursors is presented. The chemical, structural, and electronic properties of these species are characterized in detail, within solution and thin‐films, using electrospray ionization mass spectrometry, grazing angle Fourier transform infrared spectroscopy, thermogravimetric analysis, atomic force microscopy, X‐ray photoelectron spectroscopy, and ultraviolet photoelectron spectroscopy. These analyses show that under suitable deposition conditions the resulting solution processed MoO_x thin‐films possess the appropriate morphological and electronic properties to be suitable for use in organic electronics. This is exemplified through the fabrication of poly(3‐hexylthiophene):[6,6]‐phenyl C₆₁ butyric acid methyl ester (P3HT:PC₆₁BM) bulk heterojunction (BHJ) solar cells and comparisons to the traditionally used poly(3,4‐ethyldioxythiophene)/poly(styrenesulfonate) anode modifying layer.     

Self‐Doping Fullerene Electrolyte‐Based Electron Transport Layer for All‐Room‐Temperature‐Processed High‐Performance Flexible Polymer Solar Cells

To achieve high‐performance large‐area flexible polymer solar cells (PSCs), one of the challenges is to develop new interface materials that possess a thermal‐annealing‐free process and thickness‐insensitive photovoltaic properties. Here, an n‐type self‐doping fullerene electrolyte, named PCBB‐3N‐3I, is developed as electron transporting layer (ETL) for the application in PSCs. PCBB‐3N‐3I ETL can be processed at room temperature, and shows excellent orthogonal solvent processability, substantially improved conductivity, and appropriate energy levels. PCBB‐3N‐3I ETL also functions as light‐harvesting acceptor in a bilayer solar cell, contributing to the overall device performance. As a result, the PCBB‐3N‐3I ETL‐based inverted PSCs with a PTB7‐Th:PC₇₁BM photoactive layer demonstrate an enhanced power conversion efficiency (PCE) of 10.62% for rigid and 10.04% for flexible devices. Moreover, the device avoids a thermal annealing process and the photovoltaic properties are insensitive to the thickness of PCBB‐3N‐3I ETL, yielding a PCE of 9.32% for the device with thick PCBB‐3N‐3I ETL (61 nm). To the best of one's knowledge, the above performance yields the highest efficiencies for the flexible PSCs and thick ETL‐based PSCs reported so far. Importantly, the flexible PSCs with PCBB‐3N‐3I ETL also show robust bending durability that could pave the way for the future development of high‐performance flexible solar cells.     

Molecule Charge Transfer Doping for p‐Channel Solution‐Processed Copper Oxide Transistors

The doping of semiconductors plays a critical role in improving the performance of modern electronic devices by precisely controlling the charge carrier density. However, the absence of a stable doping method for p‐type oxide semiconductors has severely restricted the development of metal oxide‐based transparent p–n junctions and complementary circuits. Here, an efficient and stable doping process for p‐type oxide semiconductors by using molecule charge transfer doping with tetrafluoro‐tetracyanoquinodimethane (F₄TCNQ) is reported. The selections of a suitable dopant and geometry play a crucial role in the charge‐transfer doping effect. The insertion of a F₄TCNQ thin dopant film (2–7 nm) between a Au source‐drain electrode and solution‐processed p‐type copper oxide (Cu_xO) film in bottom‐gate top‐contact thin‐film transistors (TFTs) provides a mobility enhancement of over 20‐fold with the desired threshold voltage adjustment. By combining doped p‐type Cu_xO and n‐type indium gallium zinc oxide TFTs, a solution‐processed transparent complementary metal‐oxide semiconductor inverter is demonstrated with a high gain voltage of 50. This novel p‐doping method is expected to accelerate the development of high‐performance and reliable p‐channel oxide transistors and has the potential for widespread applications.     

Structural and Electrical Properties of Atomic Layer Deposited Al‐Doped ZnO Films

Structural and electrical properties of Al‐doped ZnO (AZO) films deposited by atomic layer deposition (ALD) are investigated to study the extrinsic doping mechanism of a transparent conducting oxide. ALD‐AZO films exhibit a unique layer‐by‐layer structure consisting of a ZnO matrix and Al₂O₃ dopant layers, as determined by transmission electron microscopy analysis. In these layered AZO films, a single Al₂O₃ dopant layer deposited during one ALD cycle could provide ≈4.5 × 10¹³ cm^?2 free electrons to the ZnO. The effective field model for doping is suggested to explain the decrease in the carrier concentration of ALD‐AZO films when the interval between the Al₂O₃ layers is reduced to less than ≈2.6 nm (>3.4 at% Al). By correlating the electrical and structural properties, an extrinsic doping mechanism of ALD‐AZO films is proposed in which the incorporated Al atoms take oxygen from the ZnO matrix and form doubly charged donors, such as oxygen vacancies or zinc interstitials.