紫外氩离子激光器的锁模

采用内腔声光调制器将氩离子激光器在3511和3638埃的紫外谱线上加以锁模。获得了0.2亳微秒和10毫瓦平均功率的脉沖。用同一激光器在强5145埃谱线上获得了0.17亳微秒和750亳瓦平均功率的脉冲。这些持续时间和直接的谱线观察表明了氩离子激光器中的带宽比以前报导过的要大。     

用掺钕铝酸钇激光器获得高平均功率工作及非线性光振荡

用3吋长的掺钕铝酸钇棒,在1.08微米处获得了75瓦的连续输出,在1.0645微米处获得35瓦的连续输出,两者都是线性偏振。在1.06和1.10微米之间5个波长处和室温下接近1.34微米的两谱线处均获得了激光作用。确定了每条谱线的从优偏振。铌酸锂在这种激光器腔内产生的二次谐波及参数振荡于5400埃处平均为3瓦单束,2.16微米处平均为775毫瓦。在抽运功率达到4.5千瓦时,激光器没有去偏振的热双折射。     

日本制成室温半导体激光器

据日本电气公司透露,该公司所属的中心研究室已于1970年10月中旬制成室温连续运转的双异结半导体激光器。目前输出功率约为几十毫瓦,估计将来可以达到100毫瓦。效率在到2%之间,但有可能增加一个数量级。响应时间小于1毫微秒。输出波长范围从8,400埃到9,200埃。     

Mn/MnCl_2蒸气激光器

研制了以氯化锰为工作物质、氖作缓冲气体的连续脉冲锰蒸气激光器。观察到7根绿色激光谱线,激光输出的90％以上集中在5341谱线上。在重复率18.2千周时最大平均功率444毫瓦,效率0.05％。还观察到12900的红外激光输出。     

不均匀磁场中的氦-镉激光

本文报导氦-镉激光运转在不均匀磁场中,获得4416埃激光100毫瓦功率输出,比零磁场下增加40%以上.在阈值附近,功率增加达100%.3250埃激光功率增加更为明显.     

Nd:YAG激光的高效率波长转换

1972年由作者等人开始了借助KDP同位素使高功率、高重复率振荡型的Nd:YAG激光高效率地发生髙次谐波的研究，此后，这项研究得到发展，在紫外区域用对直到~1700埃透明的KB5O84H2O(KB5)晶体，将波长2660埃的Nd:YAG激光的四次谐波和近红外染料激光输出混频，产生可调谐到1966埃的峰值输出40~100千瓦的紫外线，以及利用尿素获得峰值输出4.5兆瓦、平均输出320毫瓦的五次谐波发生。     

多光子泵浦的氙和氩受激准分子中的受激发射

2660和3547埃处激光辐射的多光子吸收被用来泵浦Xe和Ar的受激准分子。在宽约100埃,中心各为1730埃和1260埃的谱带处观察到谱线变窄。     

气体光激射器达续输出达100毫瓦

珀肯-埃耳默（Perkin-Elmer)公司说,它已硏制出一种在6328埃处产生100毫瓦连续功率的氦-氖光激射器。平行双等离子体管由阿特伍德(J. Atwood)与里格丹（J. D. Rigdan)所领导的一个硏究组制出。从激射器管输出的功率以精密光学棱镜与另一个管的输出耗合,产生单的高强度光束。这种装置长72吋,重35磅。     

被动式Q突变钕玻璃光激射器的狭窄光谱发射

钕玻璃光激射器的光谱性质最近引起了很大的注意。通常铁玻璃光激射器的输出带宽约为50埃,中心在1.06微米附近,其中包含了数百条谱线。     

7W多谱线输出的小型离子激光器

在CLED会议上,美国加州相干公司(加州帕洛阿尔托)介绍了该公司Innova小型离子激光系列的一种最新产品。Innova307型需输出7W的多谱线可见光以及600mW的多谱线紫外光。     

High-power broadly tunable erbium-doped silica fibre laser

A Ti:sapphire laser at 980 nm has been used to pump a grating-tuned erbium-doped silica fibre laser. 540 mW launched pump power produces up to 270 mW tunable output near 1.55 mu m, with more than 250 mW obtainable from 1.52 to 1.57 mu m.<>     

Visible laser sources based on frequency doubling in nonlinearwaveguides

This paper reviews nonlinear quasi-phase-matching (QPM) waveguides and laser diodes with application to conversion of infrared laser diode wavelengths to the visible. The discussion of nonlinear QPM waveguides includes Ti-diffusion poled and E-field poled LiNbO₃ and KTP waveguides. Up to 25 mW of blue output power has been demonstrated for 120-mW infrared power injected into a nonlinear waveguide. Semiconductor laser sources suitable for frequency doubling are discussed, including distributed Bragg reflection (DBR) lasers operating at up to 200 mW output power, master oscillator power amplifiers with over 1 W output power, and wavelength-tunable flared semiconductor lasers with over 0.5 W output. A compact blue laser with 1-4 mW output power at 425-nm wavelength has been demonstrated based on a DBR laser frequency doubled in a nonlinear waveguide     

半导体激光泵浦固体激光器的增益开关效应

用功率大于100mW的二极管激光器列阵泵浦Nd:YAG固体激光器,实现了DPL的增益开关作用。研究了增益开关的动态特性,得到峰值功率大于80mW的1.06μm激光输出,与计算结果一致。提出了三阶梯泵浦的高增益开关新方法,得到峰值功率大于150mW、脉冲宽度小于0.2μs的固体激光输出。     

High-power and highly reliable 780 nm band AlGaAs laser diodes withrectangular ridge structure

A record light output power of 240 mW has been achieved for the 780 nm band AlGaAs laser diodes by using a rectangular ridge structure. The laser diodes have been operated for >1000 h at 60°C under 150 mW pulsed operation     

High temperature CW operation of p-substrate buried crescent laser diode emitting at 1.3 ?m

A 1.3 ?m InGaAsP/InP buried crescent laser diode has been fabricated on p-InP substrate. The laser diode has a low threshold current, as low as 10 mA. It operates at the output power of 5 mW under CW condition at temperatures higher nary aging test at 70°C with a constant light output of 5 mW, the lasers have been operating stably for more than 1000 h.     

LD抽运的Nd:YAG单频倍频激光器

在20mm激光腔内,Nd:YAG一端切成布氏角,与倍频晶体KTP组合构成双折射滤波片选择单纵模.用国产激光二极管(LD)纵向抽运,在会聚抽运光功率为500mW时,获得4mW单频连续运转的532nm绿光输出,同时获得约50mW的单频连续1064nm红外输出.     

Room-temperature continuous-wave laser operation of electrically-pumped 1.55 /spl mu/m VECSEL

A report is presented on room-temperature (RT) continuous-wave (CW) laser emission at 1.55 /spl mu/m of an all InP-based electrically-pumped vertical external-cavity surface-emitting laser (EP-VECSEL). Threshold currents of 1.4 kA/cm/sup 2/ and output powers of up to 0.3 mW were measured under CW operation at RT. A maximum output power of 2.7 mW has been obtained in quasi-CW operation at a heatsink temperature of 10.5/spl deg/C. This first result demonstrates that EP-VECSELs are a potential candidate for the realisation of compact vertical-cavity emitting sources.     

High-power 1.02 mu m InGaAs/AlGaAs strained quantum well lasers with GaInP buried waveguides for pumping Pr/sup 3+/-doped optical fibre amplifier

High power 1.02 mu m single spatial mode laser diodes with low-loss (3.3 cm/sup -1/) GaInP buried waveguides have been developed for pumping Pr/sup 3+/-doped optical fibre amplifiers. A maximum CW light output power of 415 mW and an optical fibre output of 71 mW at 200 mA have been achieved. A preliminary lifetest showed stable operation for over 2300 h under 100 mW CW conditions at 50 degrees C.<>     

High-power, mode-locked Nd:fibre laser pumped by aninjection-locked diode array

A neodymium-doped fibre laser has been actively mode-locked to produce pulses shorter than 120 ps using an intracavity acousto-optic loss modulator. The laser operated at 1.088 μm at an average power of 5 mW when pumped by an injection-locked diode array, which coupled approximately 40 mW of 0.82 μm into the fibre. A peak pulse power of 1 kW was obtained in Q-switched operation