Guided electromagnetic waves in organic light emitting diode structures

A detailed analysis of the optical waveguide modes in organic light emitting diodes (OLEDs) is presented. The modes are compared with respect to their electric field profile, attenuation coefficient and optical confinement factor. The first transversal electric (TE) mode is best suited for an optimized energy transfer from emitting dipoles. The transversal magnetic (TM) modes are characterized by a large plasmon character with high absorption. The propagation constants of distinct modes have been measured in test devices by grating coupling.     

Simple-structured efficient white organic light emitting diode via solution process

High-efficiency white emission is crucial to the design of energy-saving display and lighting panels, whereas solution-process feasibility is highly desirable for large area-size and cost-effective roll-to-roll manufacturing. In this study, we demonstrate highly-efficient, bright and chromaticity stable white organic light emitting diodes (OLEDs) with solution-processed single emissive layer. The resultant best white OLED shows excellent electroluminescence performance with forward-viewing external quantum efficiency, current efficiency and power efficiency of 22.7%, 48.8 cd A^− 1 and 27.8 lm W^− 1 at 100 cd m^− 2, respectively, with a maximum luminance of 19,590 cd m^− 2. Furthermore, we also observed an increment of 112% in the power efficiency, 86.9% in the current efficiency and a decrement of 39.2% in the external quantum efficiency at 100 cd m^− 2 as the doping concentration of blue dye was increased from 10 wt% to 25 wt% in the devices. The better efficiency performance may be attributed to the effective exciton-confining device architecture and low-energy barrier for electrons to inject from the hole-blocking electron-transport layer to the host layer.     

Enhanced organic light emitting diode and solar cell performances using silver nano-clusters

Silver nano-clusters (NCs) were incorporated into organic light emitting diodes (OLED) and solar cells by means of thermal evaporation. Silver NCs enhance the efficiency of both OLEDs and polymer solar cells under tailored device architecture. In tris-(8-hydroxyquinoline) aluminum (Alq₃) based small molecule OLEDs, silver NCs were deposited under the Al cathode. The electron injection from the cathode to organic layer is promoted significantly owing to silver NCs induced lightning rod effect, the Alq₃ OLEDs luminous efficiency is increased up to a factor of 6. In poly(3-hexylthiophene) (P3HT) polymer solar cells, the active layer absorption is enhanced in the presence of silver NCs, which can be ascribed to NCs induced light scattering effect as well as to plasmon enhanced local electric field effect. As a result, photocurrent of the solar cells is increased and the power conversion efficiency (PCE) is improved up to 20%. The comparative study of surface plasmon effects in different organic optoelectronic devices reveals interesting features of the surface plasmon and allows optimization of optoelectronic devices from a novel point of view.     

Real-time external sensing and compensation method for organic light emitting diode displays

A real-time external sensing and compensation method for active matrix organic light emitting diode displays is proposed. The proposed method senses and compensates for the variation of electrical characteristics of poly-Si thin-film transistors (TFTs) during display time. Experimental results show that the proposed method successfully senses the electrical characteristics of TFTs in real-time and compensates for the non-uniform emission current error.     

Effect of various microlens parameters on enhancement of light outcoupling efficiency of organic light emitting diode

Since organic light emitting diode (OLED) is a multilayer device where each layer has different refractive index, total internal reflection (TIR) plays an important role in limiting the efficiency of an OLED. Due to the presence of TIR, a major portion of light is trapped within the device in various wave guiding modes. Of the total light trapped in an OLED, we address only the part that is lost due to wave guiding mode arising from refractive index mismatch at the glass-air interface. Microlens array, to improve luminance, is a method that can be externally applied to the OLEDs without altering its electrical characteristics and is easy to use. Microlens arrays ranging from 10 to 40 μm have been fabricated using an organic elastomeric material polydimethylsiloxane (PDMS) by mold transfer technique. Maximum improvement of 25% in outcoupling efficiency for blue OLED is reported upon using the microlens array with diameter 10 μm. For a given diameter of microlens, out-coupling efficiency of OLED increases as height to diameter (H/D) ratio of microlens array approaches 0.5 (perfect hemisphere). It is also observed that outcoupling efficiency increases with the diameter of microlens for a given H/D ratio. The best luminescence improvement was observed for blue OLED, which can be explained by the higher refractive index of PDMS at lower wavelengths.     

Optically-coupled mirror-quantum well InGaAs-GaAs light emitting diode

Data are presented showing that it is possible to optically couple a semiconductor quantum well to a mirror, and thus influence its spontaneous emission lifetime, for mirror to quantum well spacings of less than an optical wavelength. Light emitting diodes with various mirror to quantum well spacings corresponding to quantum well placement at either interference nodes or antinodes are characterised in terms of light output efficiency and frequency response.<>     

Surface plasmon enhanced blue organic light emitting diode with nearly 100% fluorescence efficiency

Surface plasmon (SP) enhanced blue organic light emitting diodes (OLEDs) have been realized by using silver nanoclusters (SNCs) deposited using thermal evaporation technique. SNCs were found to have the surface plasmon resonance at wavelength 445 nm and were used with blue emitting layer BCzVBi. The optimized OLED (in terms of the size of SNCs and the distance between SNCs and emitting layer) were found to have the efficiency two times higher than reference OLED without SNCs. Internal quantum efficiency was calculated to be 24% for SP enhanced OLED owing to 96% fluorescence efficiency. Energy transfer between exciton and SPs with the separation distance have been studied experimentally and using 2D-FDTD simulation and surface–dipole energy transfer has been observed.     

Efficient blue emitters based on 1,3,5-triazine for nondoped organic light emitting diode applications

Two novel efficient blue emitters (TTT-1, TTT-2) containing 1,3,5-triazine, thiophene and triphenylamine have been designed and synthesized. Organic light emitting diodes (OLEDs) using these new triazine derivatives as emissive layers, ITO/TAPC (60 nm)/TTT-1 (Device A) or TTT-2 (Device B) (40 nm)/TPBi (60 nm)/LiF (1 nm)/Al (100 nm), were fabricated and tested. The OLEDs exhibited good performances with low turn-on voltage of 3 V, maximum luminance of ca. 8990 cd/m² for TTT-1 and 15,980 cd/m² for TTT-2, and maximum luminance efficiency of 4.7 cd/A for TTT-1 and 4.0 cd/A for TTT-2, respectively.     

Improved efficiency in fluorescent blue organic light emitting diode with a carrier confining structure

A blue organic light emitting device (OLED) with improved efficiency and good color purity is reported. The highest occupied molecular orbital (HOMO) level of the hole transport layer (HTL) and that of the emissive layer (EML) differs by 0.3 eV. This energy level mismatch confines the carriers at the HTL/EML interface. Conventional devices have only one HTL/EML interface, with a current efficiency of 2.9 cd/A. Without adding a separate hole blocking layer, incorporating multi-layers of the same HTL and EML increases this efficiency to 5.8 cd/A, with only a small increase in operating voltage yielding increased power efficiency also. But, there are an optimum number of layers, beyond which efficiency loss results. Also, including the multilayer structure simultaneously improves the blue color co-ordinates. To gain insight into the role of multilayer structures in modifying charge transport and recombination zone a simulator was developed. The simulated results could qualitatively explain the experimental observations.     

Mercury cadmium telluride-based resonant cavity light emitting diode

A CdHgTe resonant cavity light emitting diode (RCLED) is proposed as a new infrared emitter. The device is prepared by molecular beam epitaxy on a CdZnTe substrate. A 10.5 periods Bragg mirror is first deposited. The cavity material is made of Cd_0.75Hg_0.25Te and contains a wide well (50 nm) designed to emit at 3.2 μm. The last three periods of the mirror are n-type doped while the cavity material is covered by a thin p-type CdZnTe layer. A gold layer closes the cavity, serving as the second mirror of a Fabry-Perot cavity tuned around 3.18 urn. It also provides an ohmic contact to the p-region. Under forward bias, the emission spectrum displays a narrow peak (8 meV full width at half maximum) corresponding to the cavity resonance. The position and linewidth of this line are independent of temperature. The directivity of the diode is also improved with respect to a conventional emitter, in agreement with theoretical expectations. Taking advantage of the spectral properties of the RCLED a new multispectral device has been fabricated.     

蓝色发光二极管的技术与实际应用

综述了蓝色发光二极管的技术及不同材料蓝色发光二极管的制作与特性，并介绍了蓝色发光二极管的实际应用。     

Silicon light emitting device in CMOS technology

A novel silicon light emitting device was realized with standard 0.35μm 2P4M Mixed Mode/RF CMOS technology. The device functions in a reverse breakdown mode and can be turned on at 8.3 V and operated normally at a wide voltage range of 8.3 V-12.0 V. An output optical power of 13.6 nW was measured at the bias of 10 V and 100 mA, and the emitted light intensity was calculated to be more than 1 mW/cm2. The optical spectrum of the device is in the range of 500-820 nm.     

Filling of light emitting diode via-holes by MOCVD

The growth of epitaxial films on featured substrates has an important device application in junction-confinement, double hetero-structure light emitting diodes. These devices are presently grown by a liquid phase epitaxy process but growth by metalorganic chemical vapor deposition is desirable because of MOCVD's superior surface quality, uniformity, and throughput. This paper describes the effect of growth parameters on AlGaAs films deposited by atmospheric-pressure MOCVD into substrate holes typically made in the fabrication of junction-confinement LEDs. MOCVD growth replicates the substrate features; it does not give a planar surface over the holes. The behavior of epitaxy filling into holes is strongly dependent on growth temperature and total gas flow and largely independent of substrate misorientation and the thickness of the layer grown. Wet-etched holes formed (ll0)-oriented V-groove and dovetail-groove features on the hole circumference. Faceting of the MOCVD growth was seen on the wall with the (111)A feature while smooth growth was seen on the etched (111)B surface. Deceased.     

Remodeling light emitting diode in low current region

A general expression is proposed for the current-voltage (I-V) characteristics of junction diode by which it is possible to determine forward voltage across diode at actual current and temperature. Expressions fur the band gap and temperature coefficient of junction voltage based on the experimental measurements are also presented. The expressions include only experimentally obtained and derived values. These expressions have been used to check the performance of logarithmic amplifier using light emitting diode (LED) as a feedback clement, at different temperatures. Further, it has been shown that it is possible to predict the behavior of a logarithmic amplifier without temperature compensation techniques within 5% accuracy for the current range 10^-12-10^-5 A and for the temperature range -5°-60°C. The alternative could be the use of temperature compensation circuitry which may make electrometer circuit more complex. The proposed scheme is useful in applications where it is difficult to incorporate temperature compensation technique and space and power are at premium     

面向彩色有机微显示的有机白光顶发射器件

以比铝、银等金属材料透光性更好的铜作为白光有机顶发射器件的顶电极,将其应用到基于Al底电极的蓝、黄互补色顶发射白光有机电致发光器件(TEWOLED),通过合理设计器件结构,制备出的器件具有较低的驱动电压和较高的效率,4V下亮度超过1 000cd/m2、功率效率达到28.5lm/W,效率滚降较小。我们利用p型电学掺杂结构和电子注入缓冲层结构分别解决了铝和铜电极功函数同空穴传输层的HOMO能级和电子传输层的LUMO能级不匹配问题,并通过TcTa光学覆盖层的调节作用使器件具有较好的光谱稳定性。基于Cu顶电极的TEWOLED与采用Al作为互连金属的CMOS工艺兼容,我们将该器件与硅基CMOS驱动电路结合,获得了SVGA白光有机微显示器件,为彩色有机发光微显示的实现奠定了基础。     

GaAs红外发光二极管加速寿命试验研究

本文采用步进应力的试验方法设计了一个针对GaAs红外发光二极管的可靠性加速寿命的研究方案.这种方法主要是把步进应力和恒定应力两种方法相结合,用此来评估GaAs红外发光二极管的可靠度;然后总结除了GaAs红外发光二极管这种光电器件的寿命分布形式和失效模式.     

Improvement of AlGaInP light emitting diode by sulfide passivation

The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss, and effective injection of carriers were demonstrated.     

谐振腔增强带间级联中红外发光二极管的研究

本文对基于带间级联结构和谐振腔结构的中红外发光二极管进行了仿真和设计。在传统带间级联发光二极管的基础上,从器件外部引入分布布拉格反射镜（DBR）谐振腔结构,形成谐振腔带间级联发光二极管。对谐振腔参数进行仿真优化,包括DBR周期数、谐振腔的腔长、有源区在谐振腔中的位置等。结果表明,使用单周期ZnS/Ge DBR作为谐振腔上反射镜的器件输出功率最大,有源区置于谐振腔内部电场强度波峰处时,器件的输出功率最大,三级谐振腔带间级联LED器件的输出功率与55级无谐振腔器件输出功率相当,其光束发散角的半峰全宽可以从92度减小到52度。结合已生长的5级带间级联LED器件的测试结果,增加谐振腔结构后的仿真结果表明,峰值波长的辐射强度增强11.7倍,积分辐射强度增强5.43倍,光谱的半峰宽变窄6.45倍。     

Driving current and temperature dependent magnetic-field modulated electroluminescence in Alq3-based organic light emitting diode

Driving current and temperature dependences of magnetic-field modulated electroluminescence (EL) in tris(8-hydroxyquinoline) aluminum (Alq₃)-based OLEDs have been thoroughly investigated. At low temperatures, the applied magnetic-field induces a sharp increase of the EL in low field regime (B ? 35 mT) and a slow but apparent decrease at high fields (35 ? B ? 500 mT). The low-field increase in EL (LFE) survives at all working temperatures while the high-field decrease (HFE) gradually disappears as temperature is increased. At a given temperature, the higher the current level, the smaller LFE and stronger HFE are observed. To explain the observed MFEs a composite model based on magnetic-field dependent singlet-to-triplet conversion of electron-hole pairs and magnetic-field mediated triplet–triplet annihilation process is proposed in this paper.